Abstract: A copolymer comprising the polymerized product of an electron-sensitizing acid deprotectable monomer, such as the monomer having the formula (XX), and a comonomer: wherein Ra is H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl; Rx and Ry are each independently a substituted or unsubstituted C1-10 alkyl group or C3-10 cycloalkyl group; Rz is a substituted or unsubstituted C6-20 aromatic-containing group or C6-20 cycloaliphatic-containing group; wherein Rx and Ry together optionally form a ring; and wherein at least one of Rx, Ry and Rz is halogenated. A photoresist and coated substrate comprising the copolymer, and a method of making an electronic device using the photoresist, are also disclosed.
Abstract: A lighting system includes a main power source, a power switch, a daylight white color light source driver, an incandescent color light source driver, a first light source unit, and a second light source unit. The power switch includes a first terminal connected to the main power source, a second terminal and a control terminal. The two drivers are connected to the second terminal of the power switch. The first light source unit is driven by the daylight white color light source driver. The second light source unit is driven by the incandescent color light source driver. A switch driving circuit for applying power-saving switch signals is connected to the control terminal of the power switch, and a signal processing circuit for outputting instruction signals is connected to the switch driving circuit.
Abstract: A power supply device includes: a control circuit that turns on and off an output transistor to generate an output voltage from an input voltage; an internal power supply voltage generation circuit that generates an internal power supply voltage from an external power supply voltage; and a power switching circuit that switches supply of the internal power supply voltage and supply of the output voltage as a drive voltage of the control circuit.
Abstract: A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a j
Abstract: The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.
Abstract: A copolymer includes repeat units derived from a lactone-substituted monomer, a base-soluble monomer having a pKa less than or equal to 12, a photoacid-generating monomer, and an acid-labile monomer having the formula wherein R1, R2, R3, and Ar are defined herein. The copolymer can be used as a component of a photoresist composition, and the photoresist composition can be coated on a substrate having one or more layers to be patterned, or used in a method of forming an electronic device.
Type:
Grant
Filed:
October 30, 2014
Date of Patent:
November 10, 2015
Assignee:
ROHM AND HAAS ELECTRONIC MATERIALS LLC
Inventors:
Owendi Ongayi, Vipul Jain, James F. Cameron, James W. Thackeray, Suzanne Coley
Abstract: A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.
Abstract: A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.
Abstract: According to the voltage VU that occurs at one end of at least one of multiple coils of a fan motor, a back electromotive force detection circuit generates a detection signal BEMFU asserted in a cyclic manner when a fan motor is stably rotating. A lock protection circuit detects a lock state of the fan motor rotor. A period detection unit measures the detection signal BEMFU period. A synchronization pulse generating circuit generates a synchronization pulse having a period that is 1/N (N represents an integer of 2 or more) of that of the detection signal BEMFU measured in a previous cycle. A lock judgment unit counts the synchronization pulse in increments of cycles of the detection signal BEMFU. When the count value exceeds a predetermined threshold value M (M represents an integer of 2 or more) which is greater than N, the lock mode judgment signal is asserted.
Abstract: A current driving circuit is connected to an LED terminal LEDi, and generates an intermittent driving current ILEDi that corresponds to a dimming pulse signal PWMi. An error amplifier generates a feedback voltage VFB that corresponds to the difference between a detection voltage VLEDi and a predetermined reference voltage VREF. A pulse modulator generates a pulse signal having a duty ratio that corresponds to the feedback voltage VFB. A fault detection comparator COMP_OPENi generates a fault detection signal OPEN_DET which is asserted when the detection voltage VLEDi is lower than a predetermined threshold voltage VOPEN—DET. A forced turn-off circuit instructs the current driving circuit to suspend the generation of the driving current ILEDi during a predetermined period after a switching power supply starts to operate. The fault detection circuit detects whether or not the fault detection signal OPEN_DETi has been asserted in a predetermined period.
Abstract: Provided is a method of manufacturing a solid electrolytic capacitor that suppresses spreading up of a solution. The method includes forming a porous sintered body made of a valve metal and having an anode wire sticking out therefrom; forming an insulating layer made of a fluorine resin, so as to surround the anode wire; and forming a dielectric layer on the porous sintered body; forming a solid electrolyte layer on the dielectric layer, after forming the insulating layer. The process of forming the insulating layer includes melting granular particles made of a fluorine resin.
Abstract: A back electromotive force monitoring circuit has a speed detection voltage generator which biases a back electromotive force generated by a voice coil motor with a predetermined reference voltage to generate a speed detection voltage, and a calculator which generates a motor control signal in accordance with the speed detection voltage. The calculator includes a subtracter which subtracts the reference voltage from the speed detection voltage prior to generation of the motor control signal.
Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.
Abstract: A semiconductor integrated circuit device includes a COF substrate; a semiconductor integrated circuit mounted on the COF substrate and having a first voltage circuit portion operating at a first voltage range and a second voltage circuit portion operating at a second voltage range higher than the first voltage range, the circuit portions being formed on a single chip; and a resin layer for sealing the COF substrate and the semiconductor integrated circuit.
Type:
Grant
Filed:
November 5, 2013
Date of Patent:
November 3, 2015
Assignee:
ROHM CO., LTD.
Inventors:
Hiroyuki Inokuchi, Ken Hashimoto, Tomoya Sakai
Abstract: A simple, commercially viable process for the preparation of phosphonic acid monomers containing essentially no diester or inorganic phosphorous acid compounds is disclosed.
Abstract: An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.
Abstract: A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
Abstract: A semiconductor device includes a gate insulating film formed on the semiconductor substrate; a floating gate formed on the gate insulating film; a control gate formed on the floating gate and has a side coplanar with a side of the floating gate; a tunnel diffusion layer facing a portion of the floating gate; and a tunnel window formed in a portion of the gate insulating film between the floating gate and the tunnel diffusion layer, the tunnel window being formed to be thinner than a remaining peripheral portion of the gate insulating film.
Abstract: A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternately, and the stacked electrode structure includes at least one of two or more oxide conductive layers and two or more metal layers.
Type:
Grant
Filed:
June 10, 2014
Date of Patent:
October 27, 2015
Assignee:
Rohm Co., Ltd.
Inventors:
Yoshikazu Fujimori, Hiroaki Ito, Tomohiro Date