Abstract: A method of producing an alcohol compound from an organic acid compound including the step of heating a solution of the organic acid compound in the presence of a heterogeneous catalyst including transition metal supported upon a cross-linked functional polymer.

Abstract: A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion.

Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.

Abstract: An optical communication module according to the present invention includes an optical semiconductor element with an optical function region that performs light-receiving function or light-emitting function, while also including a first resin member covering the optical semiconductor element and made of a resin that transmits light emitted from the optical function region or light to be received by the optical function region, and a second resin member covering the first resin member. The optical communication module includes an attachment hole for attaching an optical fiber. The attachment hole exposes a part of the first resin member and is open at an outer surface of the second resin member.

Abstract: The present invention provides cationic exchange resin that maintains a high exchange speed of polyvalent ions in addition to monovalent ions without agglomeration occurring in spite of surface coating even when mixed bed ion-exchange resin is used.

Abstract: The present invention provides aqueous amphiphilic emulsion copolymer compositions comprising one or more aqueous phase copolymer, a residue of one or more hydrophilic chain transfer agent, and a residue of one or more hydrophobic chain transfer agent, as well as methods of making such copolymers in water or an aqueous liquid by copolymerizing a monomer component of from 20 to 80 wt. %, based on the weight of the monomer component, of a hydrophilic group-containing monomer and the remainder of a copolymerizable ethylenically unsaturated monomer or prepolymer in the presence of a mixed chain transfer agent component comprising a hydrophilic chain transfer agent, such as 3-mercaptopropionic acid, and a hydrophobic chain transfer agent, such as N-dodecyl mercaptan. The aqueous amphiphilic emulsion copolymers of the present invention are storage stable and exhibit excellent viscosity control even in high solids compositions, e.g. from 50 to 80 wt. % of the composition.

Abstract: A semiconductor module includes an insulating substrate (200) that is made of AlN and that has a first plane (201) and a second plane (202) both of which face mutually opposite directions, a first conductor layer (210) formed on the first plane (201), a second conductor layer (220) formed on the second plane (202), a semiconductor device (300) bonded to the first conductor layer (210) with a first solder layer (510) interposed therebetween, and a heat dissipation plate (400) that is formed in a rectangular shape when viewed planarly and that is bonded to the second conductor layer (220) with a second solder layer (520) interposed therebetween, and, in this semiconductor module, the heat dissipation plate (400) is deformed so as to become convex in a direction in which the second plane (202) is pointed when viewed from a width direction thereof.

Abstract: An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

Abstract: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

Abstract: A detection circuit is mounted on an electronic device having a communication function, including at least a battery, a CPU, and a communication unit, and is configured to detect the remaining battery charge. An A/D converter performs sampling of a magnitude of a current IBAT discharged from the battery, and converts the current IBAT thus sampled into a digital current value. An interface circuit receives, from the CPU, control data which indicates a period in which there is an increase in the current discharged from the battery. Based upon the control data, a control unit raises the sampling frequency of the A/D converter in the period in which there is an increase in the current IBAT.

Abstract: The wireless module according to the present invention includes a wireless IC chip for processing transmission/reception signals, a substrate on which the wireless IC chip is mounted, an antenna provided on the substrate, and a plurality of terminals extending off from the substrate in an in-plane direction of the substrate.

Abstract: Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; and a second block derived from an acrylate monomer; where a chi parameter that measures interactions between the first block and the second block is greater than or equal to about 0.05, when measured at 240° C. Disclosed herein too is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing an acrylate monomer; and where the block copolymer has a chi parameter of greater than or equal to about 0.05, when measured at 240° C.; where the chi parameter is a measure of interactions between the first block and the second block.

Abstract: The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance.

Abstract: The present invention is directed to a new more environmentally friendly method for the separation of metals from concentrated solution or more specifically to separate monovalent metals from a solutions that comprise high levels of multivalent metals by using a sulfonic functionalized resin.

Abstract: The present invention relates to a specific combination of a dopant compound and a host compound, and an organic electroluminescent device comprising the same. The organic electroluminescent device according to the present invention, has an advantage of showing a higher luminous efficiency under a driving voltage lower than that of the device comprising conventional luminescent materials.

Abstract: [Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode. [Solution] A chip diode 15 includes an epitaxial layer 21 with a p-n junction 28, constituting a diode element 29, formed therein, an anode electrode 34 disposed along a top surface 22 of the epitaxial layer 21, electrically connected to a diode impurity region 23, which is the p-side pole of the p-n junction 28, and having a pad 37 for electrical connection with the exterior, and a cathode electrode 41 electrically connected to the epitaxial layer 21, which is the n-side pole of the p-n junction 28, and the pad 37 is provided at a position separated from a position directly above the p-n junction 28.

Abstract: Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

Abstract: A heater (A1) includes a substrate (1), a heating resistor (2) formed on the substrate (1) and an electrode (3) electrically connected to the heating resistor (2) and containing a metal component. The heater (A1) further includes a diffusion prevention layer (4) which is held in contact with at least part of the electrode (3) and prevents the metal component from diffusing from the electrode (3). By preventing the diffusion of the metal component from the electrode (3) to the heating resistor (2), the separation of the heating resistor (2) and the electrode (3) is prevented.

Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.

Abstract: A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.