Abstract: A composition comprising: a blended product of: a matrix polymer; and from 0.05 to 2.5 wt % diffuser polymeric particles, wherein the diffuser polymeric particles are characterized by an average diameter from 2.0 to 8 micrometers, a particle size distribution such that at least 90 wt % of the polymer particles fall within ±30% of the volume average particle size, a refractive index, RI, from 1.50 to 1.55; a crosslinking level great than 4%; and wherein the diffuser polymeric particles are produced using at least one alkyl(meth)acrylate monomer copolymerized with from 5 wt % to 25 wt % crosslinking monomer selected from the group consisting of aliphatic crosslinking monomers, aromatic crosslinking monomers, and combinations thereof, and optionally, one or more comonomers selected from the group consisting of aryl(meth)acrylate monomers and monovinyl arenes is provided.
Abstract: A thermoplastic composition comprising from 60 percent to 99 percent by weight of one or more thermoplastic polymers; and from 40 percent to 1 percent by weight of an additive comprising a crosslinked (meth)acrylate polymer, wherein the crosslinked methylmethacrylate polymer comprises at least 99.5 percent by weight derived from methyl methacrylate units, and from greater than zero to less than 0.5 percent by weight derived from one or more multifunctional crosslinking monomers; wherein the crosslinked (meth)acrylate polymer has a volume average particle size of equal to or less than 1.0 micron; and wherein an article produced from the scratch-resistant thermoplastic composition has a hardness of greater than F is provided. Also provided are a method of making the thermoplastic composition, articles made from the polycarbonate composition, and a method of making the articles.
Type:
Application
Filed:
December 21, 2011
Publication date:
November 28, 2013
Applicant:
Rohm and Haas Company
Inventors:
Veera Nelliappan, Eric G. Lundquist, Yannick Saint-Gerard
Abstract: Provided is a practical plug-in hybrid vehicle or an electric vehicle as well as a charge system, a fuel consumption measurement system, and an environment protection system for the vehicles. The charge system includes an electric power source charging a vehicle having a battery, a power supply unit for supplying electric power from the electric power source to the vehicle, and a power cable communication unit for performing power cable communication concerning the vehicle and the charging via the power supply unit. The vehicle includes a fuel tank for receiving oil from outside, a storage unit for storing oil supply information, a power source which consumes the fuel in the fuel tank and provides a travel power, a travel distance information acquisition unit, and a control unit which automatically calculates the fuel consumption according to the oil supply information in the storage unit and the travel distance information in the travel distance acquisition unit.
Abstract: A bridge output circuit includes an output terminal, a high side transistor, a low side transistor, a high side driver for controlling a gate voltage of the high side transistor, a low side driver for controlling a gate voltage of the low side transistor, and a controller for controlling the high side and low side drivers. The low side driver includes a first current source, a second current source, and a first assist circuit. The controller is configured to control the turning-on and turning-off states of the first current source, the second current source and the first assist circuit.
Abstract: A current source generates a reference current. A first transistor is a depletion-type MOSFET arranged such that one terminal thereof is connected to the current source and its gate is connected to its source. A second transistor is an enhancement-type MOSFET arranged such that one terminal thereof is connected to the other terminal of the first transistor, the other terminal thereof is connected to a fixed voltage terminal, and its gate and drain are connected. A third MOSFET is an enhancement-type P-channel MOSFET arranged such that one terminal thereof is connected to the current source, the other terminal thereof is connected to the fixed voltage terminal, and its gate is connected to a connection node connecting the first and second transistors. A constant voltage circuit outputs at least a voltage that corresponds to the gate voltage of the third transistor or a voltage that corresponds to the gate voltage thereof.
Abstract: A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a j
Abstract: A load driving device disclosed in the specification includes a power supply circuit for supplying to a load an output voltage converted from an input voltage, a detection voltage generation circuit for generating a detection voltage which varies depending on a magnitude of a voltage drop which across the load, and a control circuit for controlling the power supply circuit so that it performs output feedback control of the output voltage, on the basis of the detection voltage.
Abstract: A tin or tin alloy plating film surface treatment aqueous solution that can reduce whiskers on the surface of a tin or tin alloy plating film, and can provide a favorable tin or tin alloy plating film using a simple method for tin or tin alloy plating films that are used on electronic components.
Abstract: A load driving device according to the present invention is provided with: an enabling control section generating an enabling signal from an externally inputted PWM signal; and a load driving section that is turned on/off according to the enabling signal, and that PWM-drives the load according to the PWM signal.
Abstract: An LED lighting apparatus includes a support unit including a support surface facing an illumination side, a plurality of LED chips supported on the support surface, and a cover that covers the support surface and transmits light from the LED chips. The cover includes a periphery which, as viewed in plan, includes four first sides that are spaced apart from each other and four second sides each connecting ends of adjacent ones of the first sides. The first sides consisting of two pairs of parallel sides, and each of the first sides constituting one of the two pairs and each of the first sides constituting the other one of the two pairs form a right angle. Each of the first sides and each of the adjacent second sides form an obtuse angle.
Abstract: Stable zero-valent metal compositions and methods of making and using these compositions are provided. Such compositions are useful as catalysts for subsequent metallization of non-conductive substrates, and are particularly useful in the manufacture of electronic devices.
Abstract: The present invention provides thermosetting aqueous binder compositions of one or more cyclic enamine, including bis-enamines and di- or higher functional enamines, optionally containing a water soluble or dispersible or dispersible primary amine compound. The binders are at least substantially formaldehyde free, need no polycarboxylic or polycarboxylate component, and yet provide excellent hot wet tensile strength when cured for as little time as a minute or less in use.
Type:
Grant
Filed:
June 3, 2011
Date of Patent:
November 26, 2013
Assignees:
Dow Global Technologies LLC, Rohm and Haas Company
Inventors:
Brad Bailey, William C. Finch, Hyun K. Jeon, Charles James Rand, Robert L. Sammler, Francis J. Timmers, Barry Weinstein
Abstract: An LED lamp A1 includes a plurality of LED modules 1 and a substrate 2 on which the LED modules 1 are mounted in a row. A light guide 3 covering the LED modules 1 is provided on the substrate 2. The light guide 3 is held in close contact with each of the LED modules. With this arrangement, a proper amount of light is obtained with the use of a smaller number of LED modules 1 or with less power consumption.
Abstract: Provided is a molding composition comprising, based on the total weight of the composition, (A) 50.0% by weight to 99.5% by weight of at least one (co)polymer which is a homopolymer or copolymer of at least 80% by weight of methyl methacrylate, (B) 0.5% by weight to 50.0% by weight of at least one copolymer obtained by polymerization of a monomer, and (C) at least one low molecular weight (meth)acrylate (co)polymer having a solution viscosity in chloroform at 25° C. (ISO 1628—part 6) of less than or equal to 55 ml/g.
Type:
Grant
Filed:
June 26, 2012
Date of Patent:
November 26, 2013
Assignee:
Evonik Röhm GmbH
Inventors:
Klaus Schultes, Werner Hoess, Nils Mehler
Abstract: A first protection circuit includes a first diode and a first transistor. The anode of the first diode is connected to a terminal to be protected. The first transistor is configured as an N-channel MOSFET, and arranged such that the first terminal of the conduction channel thereof is connected to the cathode of the first diode, and the second terminal of the conduction channel thereof, and the gate and the back gate thereof are connected to a fixed voltage terminal. The first transistor is configured as a floating MOSFET formed within an N-type well formed in a P-type semiconductor substrate. The first diode is formed in the shared N-type well in which the first transistor is formed. The cathode of the first diode and the first terminal of the conduction channel of the first transistor are connected to the N-type well.
Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
Type:
Grant
Filed:
October 7, 2010
Date of Patent:
November 26, 2013
Assignees:
National University Corporation Tohoku University, Rohm Co., Ltd.
Abstract: This invention relates to the composition of metal alloy-doped heterogeneous catalysts and their method of use. In particular the present invention relates to the composition and use of cost-effective metal alloy-doped ion exchange resin catalysts which provide for comparable yield and selectivity compared to the catalysts previously used.
Abstract: Stable zero-valent metal compositions and methods of making and using these compositions are provided. Such compositions are useful as catalysts for subsequent metallization of non-conductive substrates, and are particularly useful in the manufacture of electronic devices.
Abstract: A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer.
Type:
Grant
Filed:
November 9, 2010
Date of Patent:
November 26, 2013
Assignees:
Rohm Co., Ltd., The Board of Trustees of the University of Arkansas
Inventors:
Takukazu Otsuka, Keiji Okumura, Brian Lynn Rowden
Abstract: A liquid crystal display control circuit includes a current reduction rate setting circuit analyzes original gradations of pixels in an input image signal and sets a current reduction rate; a light emitting element control circuit adjusts a drive current of the light emitting element in response to the current reduction rate; a gradation changing circuit generates a display image signal in which the original gradations are changed to the display gradations; and a liquid crystal panel control circuit sets a transmittance of the liquid crystal panel in response to the display gradations of pixels included in the image display signal.