Abstract: Techniques for managing the distribution of power among competing electronic devices such as semiconductor die are presented. Each device may be connected to a common power supply and sources a current on a load bus based on an estimated current consumption of a next desired state. However, before doing this, the device performs an internal check to determine whether there is a sufficient available current. The device decreases a logical value of the system current specification by the increase in current which is desired. A resulting voltage (Vspec) is compared to a voltage of the load bus (Vcontact). If Vcontact<=Vspec, the device sources current on the load bus to signal other devices that the available current is reduced. If a conflict is detected with another device, an arbitration process is performed. A linear or binary search algorithm can be used based on a respective device priority.

Abstract: Techniques are provided for optimizing the programming of memory cells by obtaining a metric which indicates a program or erase rate of the memory cells. In one approach, a count of pulses used to program the cells to different verify levels of respective data states is stored. A slope of a straight line fit of data points is then obtained. Each data point can include one of the verify levels and a corresponding one of the counts. An optimal step size is determined based on the slope. The counts may exclude one or more initial program voltages while the cells are programmed sufficiently to allow faster and slower cells to be distinguished, e.g., in a natural threshold voltage distribution. An erase depth can also be adjusted. The cells can be programmed in a separate evaluation or during programming of user data.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for redundancy mapping. A controller is configured to determine that one or more defects affect a subset of a first group of cells and a subset of a second group of cells of a non-volatile memory medium. A non-volatile memory medium may include a plurality of groups of cells, and redundant groups of cells may be available for replacing defective groups of cells. A controller is configured to store a mapping between affected subsets of first and second groups of cells and a redundant group of cells for a non-volatile memory medium. A controller is configured to read data for a first group and/or second group of cells by referencing a mapping and using a redundant group of cells.

Abstract: Systems and methods for decoupling host commands in a non-volatile memory system are disclosed. In one implementation, a non-volatile memory system includes a non-volatile memory and a controller in communication with the non-volatile memory. The controller is configured to translate a first command that is formatted according to a communication protocol to a second command that is formatted generically, store the first command in an expected queue, and store the second command in the expected queue with a command priority. The controller is further configured to execute the second command based on the command priority, translate a result of the executed second command into a format according to the communication protocol, and transmit the result of the executed second command in the format according to the communication protocol to a host system dependent upon a position of the first command in the expected queue.

Abstract: A non-volatile storage system is provided that includes a mechanism to restore data that has been corrupted beyond the limits of traditional error correction. The system creates first level parity information for each subset of data to form multiple sets of programmable data, with each set of programmable data including a subset of data and corresponding first level parity. Separate second level parity is created for each set of programmable data. The system creates combined second level parity information based on a function of separate second level parity information for the multiple sets of programmable data. If a set of programmable data is found to be corrupt, the corrupt subset of data is recovered using the corrupt subset of data read from the non-volatile storage system, the corresponding first level parity read from the non-volatile storage system and the combined second level parity information.

Abstract: A memory system and method for fast firmware download are provided. In one embodiment, a memory system is presented comprising non-volatile memory, volatile memory, and a controller. The controller is configured to receive a boot loader and firmware; store the boot loader and firmware in the volatile memory; execute the boot loader, wherein executing the boot loader causes the controller to read the firmware from the volatile memory, decompress the firmware, and store the decompressed firmware in the volatile memory; and copy the compressed firmware from the volatile memory to the non-volatile memory. Other embodiments are provided.

Abstract: A mobile device and method for synchronizing use of the mobile device's communications port among a plurality of applications are provided. In one embodiment, a mobile device is provided comprising a communications port configured to connect with a mobile device accessory and a processor. The processor is configured to synchronize requests from a plurality of applications running on the mobile device to prevent application(s) from sending a request that would interrupt an ongoing data transfer between the mobile device accessory and another application. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Abstract: Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.

Abstract: A memory system and method for simplifying scheduling on a flash interface module and reducing latencies in a multi-die environment are provided. In one embodiment, a memory die is provided comprising a memory array, an interface, at least one register, and circuitry. The circuitry is configured to receive, via the interface, a pause command from a controller in communication with the memory die; and in response to receiving the pause command: pause a data transfer between the memory die and the controller; and while the data transfer is paused and until a resume command is received, maintain state(s) of the at least one register irrespective of inputs received via the interface that would otherwise change the state(s) of the at least one register. Other embodiments are provided.

Abstract: An integrated circuit may include a plurality of input/output (I/O) cells used for communicating signals, power, and ground to and from a core of the integrated circuit. The I/O cells may each include a bond pad formed in one or more top metal layers. One or more of the bond pads may be offset a predetermined distance from an I/O cell edge corresponding to a chip edge of the integrated circuit. A volume may be determined by the I/O cell edge and the predetermined distance and one or more rails may be disposed in the volume and in at least one metal layer common with at least one metal layer of the bond pad. The rails may be involved in the discharge of electrostatic discharge (ESD) current, and may reduce path resistance of the path used to discharge the ESD current.

Abstract: Methods and systems for reducing the settling time of a voltage regulator are described. In some cases, the settling time of the voltage regulator may be reduced by detecting that the voltage regulator is transitioning from a standby mode to an active mode and drawing additional current from the output of the voltage regulator during a current boosting phase. The current boosting phase may correspond with a current boosting pulse that is initiated when an enable signal is received from a controller and then is ended when the output voltage of the voltage regulator is within a first voltage of the desired regulation voltage or has overshot the desired regulation voltage by a second voltage (e.g., has overshot the desired regulation voltage by 150 mV).

Abstract: A non-volatile memory system includes a plurality of NAND strings (or other arrangements) that form a monolithic three dimensional memory structure, bit lines, word lines, and one or more control circuits. Multiple NAND strings of the plurality of NAND strings have different select gates connected to different select lines. The multiple NAND strings are connected to a common bit line. The multiple NAND strings are connected to a common word line via their respective different select gates. The one or more control circuits concurrently program multiple memory cells on the multiple NAND strings.

Abstract: A non-volatile memory system may include a plurality of memory dies and a controller that is configured to write data into the memory dies according to a multi-die interleave scheme. A total number of the dies may be a non-multiple of a die component number of the interleave scheme. The controller may select abstract address based on a virtual die layout, and translate the abstract address to actual physical addresses. The translation may identify actual blocks located in different rows of blocks. The controller may also read data sets from the memory dies. To do so, the controller may translate an abstract address to actual physical addresses, which may similarly identify actual blocks located in different rows of blocks.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for parity storage management. A system includes a plurality of storage elements. A system includes a controller that selects a parity storage element from a plurality of storage elements. A parity storage element has an error rate higher than other elements of a plurality of storage elements, and the parity storage element stores parity data for the plurality of storage elements.

Abstract: A high output voltage VOH level and a low output voltage VOL level parametric test system may include test circuitry coupled to output nodes of input/output (I/O) driver circuits. The test circuitry may source and sink current to the output nodes while the I/O driver circuits are in pull down and pull up states, respectively, in order to generate output voltages on the output nodes. The parametric test system may compare the output voltages with a plurality of high and low reference levels to determine ranges of the output voltages. The ranges may be used to determine whether the I/O driver circuits pass the VOH and VOL test requirements. The VOH/VOL test system may be implemented on-chip with other components of the external device, which may eliminate the need to perform other parametric testing with external test equipment.

Abstract: A vertical, columnar resistor in a semiconductor device is provided, along with techniques for fabricating such a resistor. The resistor may be provided in a peripheral area of a 3D memory device which has a two-tier or other multi-tier stack of memory cells. The structure and fabrication of the resistor can be integrated with the structure and fabrication of the stack of memory cells. The resistor may comprise doped polysilicon. In an example implementation, a polysilicon pillar extends a height of a first tier of the stack and a metal pillar above the polysilicon pillar extends a height of a second tier of the stack.

Abstract: A memory system and method for improving write performance in a multi-die environment are disclosed. In one embodiment, a memory system is provided comprising a plurality of memory dies and a controller. The controller is configured to determine a programming status of each of the plurality of memory dies and dynamically adjust a maximum peak current limit of the plurality of memory dies based on the programming status of each of the plurality of memory dies. Other embodiments are provided.

Abstract: Technology is described herein for reclaiming a memory device that has a defective plane. A solution allows a memory device with a defective plane to operate as a single plane device. The memory device with the defective plane may be used without any changes to the memory controller. Thus, the memory controller can send single plane commands to the memory device with the defective plane by using single plane addressing. The memory device may have logic that properly translates the single plane command so that it is compliant with the memory mapping of the multi-plane memory device with the defective plane. Thus, the command will access the correct block in the correct plane.

Abstract: Systems and methods for managing transfer of data into and out of a host data buffer of a host are disclosed. In one implementation, a partial write completion module of a storage system retrieves from the host, stores in a memory, and acknowledges retrieving and storing with a partial write completion message, each subset of a larger set of data associated with a host write command. The host may utilize received partial write completion messages to release and use the portion of the host data buffer that had been storing the subset identified in the message rather than waiting to release data associated with the host write command until all the data associated with the command is stored in the memory. The memory in which each subset is stored may be non-volatile memory in the storage device or a shadow buffer on the host or an external memory device.

Abstract: Systems and methods for managing transfer of data into and out of a host data buffer of a host are disclosed. In one implementation, a partial write completion module of a storage system retrieves from the host, stores in a memory, and acknowledges retrieving and storing with a partial write completion message, each subset of a larger set of data associated with a host write command. The host may utilize received partial write completion messages to release and use the portion of the host data buffer that had been storing the subset identified in the message rather than waiting to release data associated with the host write command until all the data associated with the command is stored in the memory. The memory in which each subset is stored may be non-volatile memory in the storage device or a shadow buffer on the host or an external memory device.