Abstract: Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory.

Abstract: Techniques are provided for fabricating a memory device in which the memory cells have a uniform program and erase speed. In one aspect, a memory device is provided with memory holes having diameters which become progressively smaller as a distance between the memory holes and a local interconnect become progressively larger. In another aspect, a fabrication process is provided for such a memory device. The memory holes which are relatively closer to the local interconnect have a relatively thinner blocking oxide layer due to etching used to remove a sacrificial material of the control gate layers. The increased diameter compensates for the thinner blocking oxide layer.

Abstract: Systems and methods for detecting a command execution abort are disclosed. Power failure may abort the writing of data in a memory device prematurely, resulting in potential data corruption. A memory device controller in the memory device sends commands, such as write or erase commands, to one or more memory integrated circuit chips. Along with executing the commands, the memory integrated circuit chips track execution of the commands by storing the address at which the command is being executed along with flag(s) indicative of the progress executing the command (e.g., command has begun and/or completed execution). When a power failure occurs, the memory device controller may poll the memory integrated circuit chips for the address/flags information to determine whether (or where) the command abort occurred. Thus, relying on the address/flag(s), the memory device controller may more quickly or easily determine whether a command abort has occurred.

Abstract: In one embodiment, a memory system stores data encrypted with a cipher key in a block of a page in non-volatile memory, reads the cipher key version number associated with the page, determines whether the cipher key version number associated with the page is different from a cipher key version number of the cipher key used to encrypt the data and, if it is, writes a data pattern encrypted with the cipher key into the other blocks of the page, and stores the cipher key version number of the cipher key used to encrypt the data in the storage space in the non-volatile memory. Other embodiments are provided.

Abstract: A method for encrypting data may generate an encryption instruction and combine it with a payload of data to form a packet. The packet is associated with a command and passed to a host file system process. The packet, now associated with a second command, is received from the host file system process. The encryption instruction and the payload of data are extracted from the packet. At least a portion of the payload of data is encrypted based on the encryption instruction. A method for decrypting data may receive a packet and generate a decryption instruction. At least a portion of the packet is decrypted using at least the decryption instruction. The second packet comprising the decrypted packet is passed to a host file system process. A third packet comprising the decrypted packet is received from the host file system process. The decrypted packet is extracted from the third packet.

Abstract: A device includes a memory device coupled to an error correction code (ECC) decoder. The ECC decoder is configured to generate syndromes corresponding to a representation of a codeword received from the memory device and to perform a single decoding operation on a representation of data included in the representation of the codeword. The single decoding operation is configured to change at least one bit of the representation of the data based on a majority value of a group of the syndromes that are associated with the bit.

Abstract: A reticle for a semiconductor lithography process includes a glass plate having regions with a reduced optical transmission factor. The regions may include arrays of elements comprising defects such as cracks or voids which are formed by laser pulses. The regions may be adjacent to openings in an opaque material at the bottom of the reticle to shield the openings from a portion of the light which illuminates the reticle from the top. As a result, the light which exits the reticle and is used to pattern a substrate has an asymmetric intensity. This allows the substrate to be patterned with an inspection mark which indicates whether a defocus condition exists, and whether there is a positive or negative defocus condition. Related methods use a reticle to form a pattern on a substrate and for adjusting a focus condition using a reticle.

Abstract: Ring bus architectures for use in a memory module are disclosed. A memory module may include a ring bus controller and a bus bridge positioned on a primary ring bus. The memory module also includes a secondary ring bus in communication with the bus bridge and a plurality of non-volatile memory units. The ring bus controller is configured to send a configuration command to the bus bridge via the primary bus ring, where the configuration command includes an indication to route future commands and/or data to the secondary ring bus extending from the bus bridge. The bus bridge is configuration to, in response to the configuration command, configure the bus bridge to route future commands and/or data from the primary ring bus to the secondary ring bus.

Abstract: An integrated circuit (“IC”) includes an input receiver with multiple hysteresis levels. An exemplary input receiver may be an input buffer with a Schmitt trigger that has multiple hysteresis windows between different high and low input voltages. This circuit may improve the input noise immunity of the external input signals and timing by allowing for a selection one of the plurality of levels depending on parameters of the input (e.g. noise level).

Abstract: Systems and methods for partial bad block reuse may be provided. Data may be copied from a block of a first memory to a block of a second memory. A post write read error may be detected in a first portion the data copied to the block of the second memory without detection of a post write read error in a second portion of the data copied to the block of the second memory. The block of the second memory may be determined to be a partial bad block usable for storage in response to detection of the post write read error in the first portion of the data but not in the second portion of the data.

Abstract: A method is provided that includes providing a memory device including a first word line, a vertical bit line, a non-volatile memory material disposed between the first word line and the vertical bit line, and a memory cell disposed between the first word line and the vertical bit line. The first word line has a first height. The method further includes forming one or more conductive filaments in the memory cell. The one or more conductive filaments are substantially confined to a filament region having a second height less than the first height and disposed substantially about a vertical center of the memory cell.

Abstract: Read operations are performed in a multi-plane memory device. A state machine interfaces an external controller to each plane of memory cells to allow reading from selected word lines in the planes. In one approach, different types of read operations are performed in different planes, such as a multi-level cell read, e.g., a lower, middle or upper page read and a single-level cell (SLC) read. When the read operation in one plane uses fewer read voltages than another plane, the read data can be output early from the one plane while read operations continue on the other plane. The external controller can also command a cache release for one plane after outputting data from the caches of another plane. Read voltages can be set for each plane in a respective set of registers.

Abstract: Techniques are disclosed relating to writing data across multiple storage blocks in a storage device. In one embodiment, physical erase blocks in a bank of a storage device are erasable. Ones of the physical erase blocks may be associated with different respective communication channels. In such an embodiment, a data stripe may be written across a set of physical erase blocks such that the set of physical erase blocks includes physical erase blocks of different banks and includes physical erase blocks associated with different communication channels. In some embodiments, a request to read a portion of the data stripe may be received. In response to the request, a determination may be made that one of the set of physical erase blocks is unavailable to service the request. The request may then be serviced by reassembling data of the unavailable physical erase block.

Abstract: Techniques are disclosed relating to storing translations in memory that are usable to access data on a recording medium. In one embodiment, a request is sent for a memory allocation within a non-pageable portion of a memory in a computer system. Responsive to the request, allocated memory is received. Translations usable to map logical addresses to physical addresses within a storage device are stored within the allocated memory. In some embodiments, the translations are usable to access an area within the storage device used to store pages evicted from the memory. In one embodiment, a size of the memory allocation is determined based on a size of the area. In another embodiment, a size of the memory allocation is determined based on a size of a partition including the area. In some embodiments, the storage device is a solid-state storage array.

Abstract: A memory system or flash card includes a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects can be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements are used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements leads to improved memory management and data management. That action includes calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: Disclosed herein is a 3D memory with vertical NAND strings, and method for fabricating the same. Each vertical NAND string has a source side select transistor having a body in contact with a single crystal silicon substrate. The NAND string channel is formed from silicon germanium (SiGe), which provides for greater electron mobility than silicon. The body of the source side select transistor comprises epitaxial crystalline silicon germanium (SiGe) in contact with the single crystal silicon substrate. By epitaxial crystalline SiGe it is meant that the crystalline SiGe has the same crystalline orientation as the single crystal silicon substrate.

Abstract: Systems and methods for detecting program disturb and for programming/reading based on the detected program disturb are disclosed. Program disturb comprises unintentionally programming an unselected section of memory during the program operation of the selected section of memory. To reduce the effect of program disturb, the section of memory is analyzed in a predetermined state (such as the erase state) for program disturb. In response to identifying signs of program disturb, the voltages used to program the section of memory (such as the program verify levels for programming data into the cells of the section of memory) may be adjusted. Likewise, when reading data from the section of memory, the read voltages may be adjusted based on the adjusted voltages used for programming. In this way, using the adjusted programming and reading voltages, the effect of program disturb may be reduced.

Abstract: A storage module and method for virtual abort are disclosed. In one embodiment, a virtual abort of a read command is provided. The read command triggers a read operation that comprises reading data from the storage module's memory, processing the data by at least one processing module as the data moves along a data path from the memory to the storage module's host interface module, and then providing the data to a host via the host interface module. When an abort command is received, the storage module allows the data that is read from the memory to be processed by the at least one processing module as the data moves along the data path to the host interface module but prevents the host interface module from providing the data to the host. In another embodiment, a virtual abort of a write command is provided.

Abstract: Read operations are performed in a multi-plane memory device. A state machine interfaces an external controller to each plane of memory cells to allow reading from selected word lines in the planes. In one approach, different types of read operations are performed in different planes, such as a multi-level cell read, e.g., a lower, middle or upper page read and a single-level cell (SLC) read. When the read operation in one plane uses fewer read voltages than another plane, the read data can be output early from the one plane while read operations continue on the other plane. The external controller can also command a cache release for one plane after outputting data from the caches of another plane. Read voltages can be set for each plane in a respective set of registers.

Abstract: A memory device and associated techniques provide a uniform erase depth for different blocks of memory cells which are at different distances from pass gates of a voltage source. In one approach, a voltage of a source side select gate transistor of a memory string is a decreasing function of the distance. In another approach, a magnitude or duration of an erase voltage at a source end of a memory string is an increasing function of the distance. Adjacent blocks can be arranged in subsets and treated as being at a common distance. In another approach, an additional erase pulse can be applied when the distance of the block exceeds a threshold. Other variables such as initial erase voltage and step size can also be adjusted as a function of distance.