Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first semiconductor region having a first conductivity type; and a second semiconductor region having a second conductivity type. The first semiconductor region is configured within the second semiconductor region and a plurality of crystal defects are formed in the second semiconductor region and at least part of the first semiconductor region is surrounded by the plurality of crystal defects. Therefore, recombination of charge carriers (electrons and holes) on a lateral direction and a longitudinal direction could be taken into account, and the switching time of the semiconductor device could be adequately decreased.

Abstract: A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.

Abstract: A micro controller unit includes an arithmetic processing unit that executes an arithmetic processing; a peripheral circuit unit that outputs an event signal, which is a trigger for start of the arithmetic processing, based on an operation state; and a data access control unit. When an instruction to access the data designated by the first address is received from the arithmetic processing unit, the data access control unit selectively executes, depending on the event signal input from the peripheral circuit unit: a processing of instructing the data storage unit to access data designated by a first address indicating a storage location of the data on the data storage unit; and a processing of processing of converting the first address and instructing the data storage unit to access data designated by a second address, which is associated with the first address and is different from the first address.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction diode, which is formed in a part of a region between the transistors, wherein each of the transistors includes: a trench: a conductive region; and an insulating film, wherein a first thickness of a first insulating film is a thickness between an end portion of a first conductive region on a bottom surface side of the first trench and a bottom surface of the first trench, wherein a second thickness of a second insulating film is a thickness between an end portion of a second conductive region on a bottom surface side of the second trench and a bottom surface of the second trench and wherein the first thickness is thicker than the second thickness.

Abstract: An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.

Abstract: A controller device of an engine ignition circuit includes: a driver circuit that controls a voltage of a control terminal of a first switching element for controlling an ignition timing of an ignition circuit of an engine, based on a timing signal supplied from an engine control unit for controlling the engine; and an auxiliary driver circuit that supplies the timing signal to the control terminal of the first switching element when a battery voltage supplied to the driver circuit becomes equal to or lower than a threshold value.

Abstract: A control IC of a switching power-supply device includes a switching element, a control circuit, a regenerative current element for allowing a regenerative current of an inductor to flow when the switching element is in a turned-off state, a ground terminal connected to the regenerative current element, and a protection circuit that forms, when a voltage of the connection point is equal to or less than a threshold value, a regenerative path which connects a connection point between the regenerative current element and the ground terminal to a specific terminal and through which the regenerative current flows, and stops on-and-off control of the switching element by the control circuit.

Abstract: An ignition coil includes a first winding, a second winding, and a third winding. A first switch is electrically connected to the first winding. A battery is electrically connected to the first winding. A booster is electrically connected to the battery. A second switch is electrically connected to the third winding. A drive device drives the first switch and the second switch. The drive device turns the first switch from on-state to off-state to allow a secondary current to flow through the second winding, turns the second switch from off-state to on-state to supply an output of the booster to the third winding, and superimpose a second current to the second winding. When a third winding current becomes equal to or greater than a predetermined value, the booster controls such that power generated by the third winding current and an output voltage of the booster is restricted to constant power.

Abstract: A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.

Abstract: A method for manufacturing a semiconductor substrate, the semiconductor substrate including: a substrate; an initial layer provided on the substrate; a high-resistance layer provided on the initial layer which is composed of a nitride-based semiconductor and contains carbon; and a channel layer provided on the high-resistance layer which is composed of a nitride-based semiconductor, and at a step of forming the high-resistance layer, a gradient is given to a preset temperature at which the semiconductor substrate is heated, and the high-resistance layer is formed such that the preset temperature at the start of formation of the high-resistance layer is different from the preset temperature at the end of formation of the high-resistance layer. It is possible to provide the method for manufacturing a semiconductor substrate, which can reduce a concentration gradient of carbon concentration in the high-resistance layer and also provide a desired value for the carbon concentration.

Abstract: An analog to digital conversion device according to one or more embodiments may include sequential comparison type analog to digital converters, wherein each of the analog to digital converters converts an analog signal to a digital signal by repeating comparative voltage generation processing to generate a comparative voltage and comparison processing to compare the analog signal with the comparative voltage. Each of the analog to digital converters may include a noise notification part that generates a noise notification signal to give notification of noise production and inputs the noise notification signal to a different one of the analog to digital converters. At start of operation, based on the notification noise signal inputted from the different analog to digital converter, each of the analog to digital converters may be synchronized with the different analog to digital converter performing the comparative voltage generation processing and the comparison processing.

Abstract: A switching power supply device that switches setting of an output voltage based on an external signal according to one or more embodiments includes: a transformer including a primary winding and n secondary windings; n synchronous rectification elements provided, corresponding to the n secondary windings; and n?1 switch elements that switch the secondary windings. Each of the n?1 switch elements is kept on or off according to a high or low voltage value out of set voltages of the output voltage, and all or any of the n synchronous rectification elements are selected to synchronously rectify pulse voltage of the secondary windings, and when operation with a high set value of the output voltage stops, a synchronous rectification element used to output the high set value performs switching operation until the output voltage goes down to the low voltage value of the set voltages of the output voltage.

Abstract: A rectification circuit rectifies an alternating current voltage of an alternating current power supply. A parallel converter comprises converters that correspond to phases and that are connected in parallel to an output terminal of the rectification circuit. Each converter comprising a reactor, a switching circuit that is connected in series to the reactor and a diode that is connected in series to the reactor. A smoothing capacitor is connected to an output terminal of the parallel converter. A control circuit generates pulse signals corresponding to phases based on an error voltage between an output voltage of the smoothing capacitor and a reference voltage and on an output voltage of the rectification circuit, and switches the switching circuits in the converters using the pulse signals. Current detection circuits are provided corresponding to the converters and that detect currents flowing through the switching circuits.

Abstract: A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Abstract: Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (Si3N4), a silicon oxide film that includes silicon oxide (SiO2), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Abstract: In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100° C. below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.

Abstract: One or more embodiments disclose a semiconductor device that includes a trench extending into a drift zone of a semiconductor body from a surface of the semiconductor body in a first direction; a dielectric structure in the trench; a gate electrode in the dielectric structure; a body region of a first conductivity type other than a second conductivity type of the drift zone; and an auxiliary structure of the second conductivity type adjoining the drift zone, the body region and the dielectric structure, wherein the auxiliary structure extends outwardly from the trench in a second direction, the second direction orthogonal to the first direction, and in the second direction, a first length of the auxiliary structure is larger than a second length of the trench.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: Circuits and devices are described that provide power to appliances and other devices via a power correction circuit and an LLC converter, which may for example include resonant series converters and flyback converters. The circuits and devices economize on board space, part size and power start up time by separately powering up the controller circuit portion prior to powering up the LLC converter.