Abstract: A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.

Abstract: A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.

Abstract: An analog-to-digital conversion device is disclosed that independently executes each of events instructed by a host device. Each of analog-to-digital converters include an execution control unit, an event management unit that notifies of a synchronization instruction when a synchronous conversion event set up with a synchronous conversion operation is instructed as the event, and an operation control unit.

Abstract: A semiconductor wafer and a method for forming a semiconductor. The semiconductor wafer includes: a first semiconductor component having a first device; a second semiconductor component having a second device; an insulation layer laterally extending to the first semiconductor component and the second semiconductor component; and a grind layer configured on or adjacent to a backside of the semiconductor wafer. Therefore, chipping or cracking can be decreased or avoided when the grind layer is exposed during the thinning process (such as backside grinding).

Abstract: A semiconductor device may comprise a substrate; a trench formed in the substrate and filled with an insulating layer; and a gate electrode and a source embedded in the insulating layer. The gate electrode and the source electrode may be positioned in the insulating layer in the trench above and below each other. From a cross-sectional perspective, the gate electrode and the source electrode are not overlapped in horizontal or vertical direction. The trench may extend to a first depth of a bottom surface of the trench below the gate electrode, and may extend to a second depth of the bottom surface of the trench below the source electrode. The first depth and the second depth may be different.

Abstract: A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.

Abstract: Circuits and devices are described that provide power to appliances and other devices via a power correction circuit and an LLC converter, which may for example include resonant series converters and flyback converters. The circuits and devices economize on board space, part size and power start up time by separately powering up the controller circuit portion prior to powering up the LLC converter.

Abstract: A semiconductor device and a method for detecting a crack of the semiconductor device are provided. The semiconductor device includes a crack sensor having a SBD structure; the SBD structure at least is configured on a first side of a semiconductor body and configured to detect a crack on the first side of the semiconductor body. Therefore, a crack on the surface of the semiconductor device can be detected by the crack sensor with high precision and simple structure.

Abstract: A semiconductor device according to one or more embodiments may include: a drain region; a drift region positioned above the drain region; a base region positioned on the drift region; a trench positioned to abut the base region and the drift region; an insulating in the trench; a counter electrode embedded in the insulating film; a gate electrode positioned above the counter electrode and that is embedded in the insulating film; and a source region that abuts the base region and the trench, wherein a thickness of the insulating film between the gate electrode and an interface between the drift region and the base region is larger than a thickness of the insulating film between the gate electrode and an interface between the source region and the base region.

Abstract: A semiconductor device may include a device region having one or more active trenches, a field termination region having an edge trench. A depth of the edge trench is larger than a depth of the one or more active trenches. A thickness of an insulation layer in the edge trench is larger than a thickness of an insulation layer in the one or more active trenches. In some embodiments, the first depth is from 1.2 to 2.0 times larger than the second depth, and a first width of the edge trench is 1.5 to 4.0 times larger than a second width of the one or more active trenches. In a cross-sectional view, a gate electrode of the edge trench is laterally offset from the source electrode in a depth direction of the edge trench such that the gate electrode and the source electrode do not overlap.

Abstract: A processor is disclosed that performs pipelining which processes a plurality of threads and executes instructions in concurrent processing, the instructions corresponding to thread numbers of the threads and including a branch instruction. The processor may include a pipeline processor, which includes a fetch part that fetches the instruction of the thread having an execution right, and a computation execution part that executes the instruction fetched by the fetch part. The processor may include a branch controller that determines whether to drop an instruction subsequent to the branch instruction within the pipeline processor based on the thread number of the thread where the branch instruction is executed and on the thread number of the subsequent instruction.

Abstract: A semiconductor device has a through hole penetrating a substrate, an insulating film filling the through hole, a gate electrode and a source electrode. The through hole penetrates a substrate on a first side. A first gate electrode may be embedded in the insulating film. A first source electrode may be embedded in the insulating film deeper than the first gate electrode. A first width of the first opening may be larger than a second width of an internal portion of the through hole. A ratio may be established between the first width and the second width. A second source electrode may be embedded in the insulating film deeper than the first source electrode. A second gate electrode may be embedded deeper than the second source electrode in a vertical direction within the through hole. The first opening and the second opening may be laterally offset.

Abstract: A semiconductor device may comprise a substrate; a trench formed in the substrate and filled with an insulating layer; and a gate electrode and a source embedded in the insulating layer. The gate electrode and the source electrode may be positioned in the insulating layer in the trench above and below each other. From a cross-sectional perspective, the gate electrode and the source electrode are not overlapped in horizontal or vertical direction. The trench may extend to a first depth of a bottom surface of the trench below the gate electrode, and may extend to a second depth of the bottom surface of the trench below the source electrode. The first depth and the second depth may be different.

Abstract: An arithmetic processor of an embodiment comprises program counter, a program memory, registers, and a decoder. Also the arithmetic processor comprises an arithmetic unit that carries out an operation using the operand and operator acquired from the registers based on a decode result by the decoder, a data memory that stores constant data and an address in association with the data, and a load unit that comprises a load data address storing unit that stores a load data address indicating an address where the constant data is stored; and an increment unit that updates the load data address stored in the load data address storing unit. The load unit loads, from the data memory, constant data corresponding to an address specified by an operand of a load instruction from the decoder, and stores the constant data in a specific one of the registers.

Abstract: A control IC of a switching power-supply device includes a switching element, a control circuit, a regenerative current element for allowing a regenerative current of an inductor to flow when the switching element is in a turned-off state, a ground terminal connected to the regenerative current element, and a protection circuit that forms, when a voltage of the connection point is equal to or less than a threshold value, a regenerative path which connects a connection point between the regenerative current element and the ground terminal to a specific terminal and through which the regenerative current flows, and stops on-and-off control of the switching element by the control circuit.

Abstract: Voltage-dividing resistors are arranged in parallel with a first DC power supply. A first switch is electrically connected to a first resistor and a second resistor and includes a first terminal, a second terminal, and a control terminal. A second switch switches supply of a power voltage from a second DC power supply. A voltage comparator includes a first and a second input terminals. A reference power supply is connected to the first input terminal of the voltage comparator and outputs a reference voltage. The first terminal of the first switch is electrically connected to the second input terminal of the voltage comparator. The control terminal of the first switch is electrically connected to a positive voltage side of the second DC power supply. When the power voltage is supplied to the control terminal, and allows a voltage to be applied to the first and the second resistors.

Abstract: A device and method for controlling a power supply. The method includes: monitoring a feedback signal of a feedback terminal; determining whether the feedback signal of the feedback terminal is not a pulse signal; and terminating an on/off operation of a switching element when the feedback signal of the feedback terminal is not a pulse signal. Therefore, an abnormal status of the device can be correctly detected with a simple structure when the feedback terminal is open or is shorted with other terminals, while an error operation and a damage of the device can be avoided.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Abstract: An alternating-current voltage detection circuit for detecting an alternating-current voltage from an alternating-current power source according to one or more embodiments may include: a rectification circuit that performs full-wave rectification on an alternating-current voltage from the alternating-current power source and supplies a rectified output to a load; a series circuit comprising a first capacitor and a second capacitor electrically connected in series between one end of the alternating-current power source and the ground terminal of the rectification element; a discharge circuit that causes the second capacitor to discharge such that an absolute value of dv/dt voltage does not reach a predetermined voltage, wherein the second capacitor is electrically connected to the ground terminal side of the rectification element; and a predetermined period generator that outputs a signal after an elapse of a predetermined period of time from stoppage of a discharge operation of the discharge circuit.

Abstract: A semiconductor device that includes a semiconductor substrate; a trench in the semiconductor substrate; a gate electrode in the trench; a source electrode in the trench, the source electrode being disposed between the gate electrode and a bottom wall of the trench; a partitioning layer in the trench, the partitioning layer extending between the gate electrode and the source electrode; and an insulating film in the trench.