Abstract: An analog to digital conversion device according to one or more embodiments may include sequential comparison type analog to digital converters, wherein each of the analog to digital converters converts an analog signal to a digital signal by repeating comparative voltage generation processing to generate a comparative voltage and comparison processing to compare the analog signal with the comparative voltage. Each of the analog to digital converters may include a noise notification part that generates a noise notification signal to give notification of noise production and inputs the noise notification signal to a different one of the analog to digital converters. At start of operation, based on the notification noise signal inputted from the different analog to digital converter, each of the analog to digital converters may be synchronized with the different analog to digital converter performing the comparative voltage generation processing and the comparison processing.

Abstract: A light emitting device includes: a first light emitting unit (10) which includes: a first blue light emitting element (11) emitting emission light with the peak wavelength being a first wavelength; and a first phosphor layer (12) and outputs white light of a first chromaticity; and a second light emitting unit (20) which includes: a second blue light emitting element (21) emitting emission light the peak wavelength being a second wavelength, the second wavelength being longer than the first wavelength; and a second phosphor layer; and outputs white light of a second chromaticity. In an xy chromaticity diagram, the first and second chromaticities are located symmetrically with respect to a predetermined chromaticity, and the difference between the predetermined chromaticity and each of the first and second chromaticities is not greater than 0.04.

Abstract: A light emitting device includes: a substrate (40); blue light emitting elements (10) arranged on the main surface of the substrate (40); and a phosphor sheet (30) containing a phosphor that is excited by emission light from the blue light emitting elements and emits excitation light, the phosphor sheet (30) being disposed above the blue light emitting elements (30), wherein the blue light emitting elements (10) includes first blue light emitting elements (11) which emit first emission light having a first wavelength taken as a peak wavelength of a light emission spectrum, and second blue light emitting elements (12) which emit second emission light having a second wavelength taken as a peak wavelength of a light emission spectrum, and the second wavelength being a longer wavelength than the first wavelength by a wavelength difference of at least 10 nm.

Abstract: A control circuit of a switching power-supply device that converts a first DC voltage supplied from an input power source into a second DC voltage by turning on/off a switching element connected between the input power source and an inductor and outputs the second DC voltage, the control circuit includes a drive circuit that, when a control signal to turn on the switching element is received, drives the switching element by supplying a plurality of drive voltages starting in order from a lowest drive voltage among the plurality of drive voltages, to a control terminal of the switching element.

Abstract: A capacitor discharge circuit according to one or more embodiments includes a capacitor connected in parallel to an alternating-current power source; a rectification element; a first discharge circuit that includes a first diode and a second diode, and causes the capacitor to discharge; a first series circuit including a first capacitor and a second capacitor connected in series between one end of the alternating-current power source and a ground terminal of the rectification element; a second discharge circuit that causes the second capacitor to discharge such that an absolute value of voltage across opposite ends of the second capacitor does not reach a predetermined voltage; and a predetermined period generator that actuates the first discharge circuit after an elapse of a predetermined period of time from stoppage of a discharge operation of the second discharge circuit.

Abstract: Semiconductor base including: silicon-based substrate; buffer layer including first and second layers alternately on silicon-based substrate, first layer made of nitride-based compound semiconductor containing first material, second layer made of nitride-based compound semiconductor containing second material having larger lattice constant than first material; channel layer on buffer layer and made of nitride-based compound semiconductor containing second material, buffer layer has: first composition graded layer between at least one of first layers and second layer immediately thereabove, made of nitride-based compound semiconductor whose composition ratio of second material is increased gradually upward, whose composition ratio of first material is decreased gradually upward; second composition graded layer between at least one of second layers and first layer immediately thereabove, made of nitride-based compound semiconductor whose first material is increased gradually upward, whose composition ratio of s

Abstract: The present invention is provided with: a series circuit consisting of a coil and a switching element; a rectifying and smoothing circuit consisting of a rectifying element and a smoothing capacitor; a calculating unit configured to calculate a multiplied voltage, obtained by multiplying an error voltage between an output voltage of the smoothing capacitor and a reference voltage by an output of the rectifying circuit, and a voltage corresponding to a current flowing through the switching element or a current from the output terminal of the rectifying circuit; a superimposing circuit configured to superimpose a signal based on the output of the rectifying circuit on a reference signal of a reference oscillator; and a control circuit configured to generate a pulse signal by comparing an output of the superimposing circuit with an output from the calculating unit, and turn on/off the switching element with the pulse signal.

Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first semiconductor region having a first conductivity type; and a second semiconductor region having a second conductivity type. The first semiconductor region is configured within the second semiconductor region and a plurality of crystal defects are formed in the second semiconductor region and at least part of the first semiconductor region is surrounded by the plurality of crystal defects. Therefore, recombination of charge carriers (electrons and holes) on a lateral direction and a longitudinal direction could be taken into account, and the switching time of the semiconductor device could be adequately decreased.

Abstract: A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.

Abstract: A micro controller unit includes an arithmetic processing unit that executes an arithmetic processing; a peripheral circuit unit that outputs an event signal, which is a trigger for start of the arithmetic processing, based on an operation state; and a data access control unit. When an instruction to access the data designated by the first address is received from the arithmetic processing unit, the data access control unit selectively executes, depending on the event signal input from the peripheral circuit unit: a processing of instructing the data storage unit to access data designated by a first address indicating a storage location of the data on the data storage unit; and a processing of processing of converting the first address and instructing the data storage unit to access data designated by a second address, which is associated with the first address and is different from the first address.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction diode, which is formed in a part of a region between the transistors, wherein each of the transistors includes: a trench: a conductive region; and an insulating film, wherein a first thickness of a first insulating film is a thickness between an end portion of a first conductive region on a bottom surface side of the first trench and a bottom surface of the first trench, wherein a second thickness of a second insulating film is a thickness between an end portion of a second conductive region on a bottom surface side of the second trench and a bottom surface of the second trench and wherein the first thickness is thicker than the second thickness.

Abstract: An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.

Abstract: A controller device of an engine ignition circuit includes: a driver circuit that controls a voltage of a control terminal of a first switching element for controlling an ignition timing of an ignition circuit of an engine, based on a timing signal supplied from an engine control unit for controlling the engine; and an auxiliary driver circuit that supplies the timing signal to the control terminal of the first switching element when a battery voltage supplied to the driver circuit becomes equal to or lower than a threshold value.

Abstract: A control IC of a switching power-supply device includes a switching element, a control circuit, a regenerative current element for allowing a regenerative current of an inductor to flow when the switching element is in a turned-off state, a ground terminal connected to the regenerative current element, and a protection circuit that forms, when a voltage of the connection point is equal to or less than a threshold value, a regenerative path which connects a connection point between the regenerative current element and the ground terminal to a specific terminal and through which the regenerative current flows, and stops on-and-off control of the switching element by the control circuit.

Abstract: An ignition coil includes a first winding, a second winding, and a third winding. A first switch is electrically connected to the first winding. A battery is electrically connected to the first winding. A booster is electrically connected to the battery. A second switch is electrically connected to the third winding. A drive device drives the first switch and the second switch. The drive device turns the first switch from on-state to off-state to allow a secondary current to flow through the second winding, turns the second switch from off-state to on-state to supply an output of the booster to the third winding, and superimpose a second current to the second winding. When a third winding current becomes equal to or greater than a predetermined value, the booster controls such that power generated by the third winding current and an output voltage of the booster is restricted to constant power.

Abstract: A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.

Abstract: A method for manufacturing a semiconductor substrate, the semiconductor substrate including: a substrate; an initial layer provided on the substrate; a high-resistance layer provided on the initial layer which is composed of a nitride-based semiconductor and contains carbon; and a channel layer provided on the high-resistance layer which is composed of a nitride-based semiconductor, and at a step of forming the high-resistance layer, a gradient is given to a preset temperature at which the semiconductor substrate is heated, and the high-resistance layer is formed such that the preset temperature at the start of formation of the high-resistance layer is different from the preset temperature at the end of formation of the high-resistance layer. It is possible to provide the method for manufacturing a semiconductor substrate, which can reduce a concentration gradient of carbon concentration in the high-resistance layer and also provide a desired value for the carbon concentration.

Abstract: An analog to digital conversion device according to one or more embodiments may include sequential comparison type analog to digital converters, wherein each of the analog to digital converters converts an analog signal to a digital signal by repeating comparative voltage generation processing to generate a comparative voltage and comparison processing to compare the analog signal with the comparative voltage. Each of the analog to digital converters may include a noise notification part that generates a noise notification signal to give notification of noise production and inputs the noise notification signal to a different one of the analog to digital converters. At start of operation, based on the notification noise signal inputted from the different analog to digital converter, each of the analog to digital converters may be synchronized with the different analog to digital converter performing the comparative voltage generation processing and the comparison processing.

Abstract: A switching power supply device that switches setting of an output voltage based on an external signal according to one or more embodiments includes: a transformer including a primary winding and n secondary windings; n synchronous rectification elements provided, corresponding to the n secondary windings; and n?1 switch elements that switch the secondary windings. Each of the n?1 switch elements is kept on or off according to a high or low voltage value out of set voltages of the output voltage, and all or any of the n synchronous rectification elements are selected to synchronously rectify pulse voltage of the secondary windings, and when operation with a high set value of the output voltage stops, a synchronous rectification element used to output the high set value performs switching operation until the output voltage goes down to the low voltage value of the set voltages of the output voltage.