Patents Assigned to Sanyo Semiconductor Co., Ltd.
  • Patent number: 8564676
    Abstract: A semiconductor device with an anti-shake function includes a logic chip having a digital circuit which obtains a value for vibration of an apparatus based on a vibration detection signal supplied from a vibration detection element to generate a correction signal. The logic chip includes a correction signal processing unit which generates the correction signal, and a control signal output unit which outputs a vibration control signal in accordance with the correction signal to a vibration correction control unit which executes vibration correction control for an optical component in accordance with vibration.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: October 22, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Tomofumi Watanabe, Hideki Hirayama
  • Patent number: 8558307
    Abstract: It is desirable to reduce chip area, lower on resistance and improve electric current driving capacity of a DMOS transistor in a semiconductor device with a DMOS transistor. On the surface of an N type epitaxial layer, a P+W layer of the opposite conductivity type (P type) is disposed and a DMOS transistor is formed in the P+W layer. The epitaxial layer and a drain region are insulated by the P+W layer. Therefore, it is possible to form both the DMOS transistor and other device element in a single confined region surrounded by an isolation layer. An N type FN layer is disposed on the surface region of the P+W layer beneath the gate electrode. An N+D layer, which is adjacent to the edge of the gate electrode of the drain layer side, is also formed. P type impurity layers (a P+D layer and a FP layer), which are located below the drain layer, are disposed beneath the contact region of the drain layer.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: October 15, 2013
    Assignees: SANYO Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Shuichi Kikuchi, Kiyofumi Nakaya, Shuji Tanaka
  • Patent number: 8558901
    Abstract: The present invention comprises: an analog/digital conversion means for converting vibration detection signals output from a vibration detection element that detects vibrations of an imaging device into digital signals; a gyro filter that obtains the amount of movement of the imaging device based on the vibration detection signals digitalized by the analog/digital conversion means; a rotation control means for generating an amount of rotary drive in a stepping motor based on both the current position and amount of movement of an optical component or an imaging element; and a stepping control means for generating and outputting pulse signals that drive the rotation of the stepping motor in each phase according to the amount of rotary drive, wherein the stepping control means enables pulse-width modulation of the ratio between the periods in which high-level pulse signals and low-level pulse signals are respectively applied to the same phase of the stepping motor.
    Type: Grant
    Filed: July 7, 2009
    Date of Patent: October 15, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Yoshihisa Yamada, Tomonori Kamiya
  • Patent number: 8554279
    Abstract: A boosting circuit unit supplies a boosting voltage to one terminal of a backlight. A boosting comparator compares a voltage applied to the other terminal of the backlight with a predetermined reference voltage value, and outputs a comparison result as a feedback signal reflecting the boosting voltage to the boosting circuit unit. An LED driver unit is connected to the other terminal of the backlight and supplies drive current to the backlight. An acquisition unit acquires a PWM signal, which is generated based on the content of a video signal and can be used to change the luminance of the backlight. An LPF unit outputs a time-averaged signal of the acquired PWM signal as a control signal to be supplied to the LED driver unit.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: October 8, 2013
    Assignees: Semiconductor Components Industries, LLC., Sanyo Semiconductor Co., Ltd.
    Inventor: Nobuyuki Otaka
  • Patent number: 8552469
    Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: October 8, 2013
    Assignees: SANYO Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Shuichi Kikuchi, Shigeaki Okawa, Kiyofumi Nakaya, Shuji Tanaka
  • Patent number: 8553098
    Abstract: A semiconductor device with an “anti-shake” function includes a logic chip having a digital circuit which obtains a value indicating the amount of vibration of device such as an imaging apparatus based on a vibration detection signal supplied from a vibration detection element to generate a correction signal. The logic chip includes a correction signal processing unit which generates the correction signal, and a control signal output unit which outputs a vibration control signal in accordance with the correction signal to a vibration correction control unit which executes vibration correction control for an optical component. The control signal output unit includes a plurality of types of signal output sections and outputs a vibration control signal corresponding to a driving unit from one signal output section selected from among the plurality of types of signal output sections.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: October 8, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventor: Tomofumi Watanabe
  • Patent number: 8546877
    Abstract: A transistor structure that improves an ESD withstand voltage is offered. There is formed a P-type insulating isolation layer that divides an N-type epitaxial layer into a plurality of regions and isolates neighboring regions from each other. A diffusion layer doped with high concentration N-type impurities and an electrode extraction layer are formed in a surface of the epitaxial layer between a low impurity concentration drain layer and the insulating isolation layer. The diffusion layer and the electrode extraction layer are connected with a drain electrode. When an excessive positive surge voltage is applied to a source electrode, a parasitic diode that makes a current path including the diffusion layer and the electrode extraction layer is turned on to shunt an ESD current from the source electrode to the drain electrode, in addition to other parasitic diodes included in a conventional structure.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: October 1, 2013
    Assignees: Semiconductor Components Industries, LLC, SANYO Semiconductor Co., Ltd.
    Inventor: Kazumasa Akai
  • Patent number: 8545716
    Abstract: A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate. The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt. In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight.
    Type: Grant
    Filed: July 16, 2008
    Date of Patent: October 1, 2013
    Assignees: Hayashi Pure Chemical Ind., Ltd., Sanyo Electric Co., Ltd., SANYO Semiconductor Manufacturing Co., Ltd., Sanyo Semiconductor Co., Ltd.
    Inventors: Tsuguhiro Tago, Tomotake Matsuda, Mayumi Kimura, Tetsuo Aoyama
  • Patent number: 8547048
    Abstract: A drive signal generating unit generates a drive signal used to alternately deliver a positive current and a negative current to a coil with a nonconducting period inserted between conducting periods. A driver unit generates a drive current in response to the drive signal generated by the drive signal generating unit and supplies the drive current to a coil. The drive signal generating unit estimates the eigen frequency of a linear vibration motor based on a detected position of the zero cross occurring in the coil during the nonconducting period, and the frequency of the drive signal is brought close to the estimated eigen frequency. The zero-cross detecting unit sets a detection window for avoiding the detection of zero cross of voltages other than the induced voltage. The zero-cross detecting unit enables a zero cross detected within the detection window and disables a zero cross detected outside the detection window.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: October 1, 2013
    Assignees: Semiconductor Components Industries, LLC, Sanyo Semiconductor Co., Ltd.
    Inventor: Tsutomu Murata
  • Patent number: 8542166
    Abstract: In performing a display in accordance with a video signal, a display signal for inspection is supplied to a pixel within a predetermined inspected row to operate an EL element therein and to thereby detect a current that flows through the EL element. The current detection data is stored in a volatile primary memory. In accordance with data obtained in this manner, a variation correcting section sequentially corrects data signals to be supplied to the respective pixel. At the time of turning on power, the variation correcting section performs the correction using the current detection data saved in a secondary memory. With this arrangement, it is possible to execute display variation correction from immediately after turning on power, and it is also possible to execute real-time correction.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: September 24, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Tsutomu Murata, Takashi Ogawa
  • Patent number: 8525259
    Abstract: The invention prevents a source-drain breakdown voltage of a DMOS transistor from decreasing due to dielectric breakdown in a portion of a N type drift layer having high concentration formed in an active region near field oxide film corner portions surrounding an gate width end portion. The field oxide film corner portions are disposed on the outside of the gate width end portion so as to be further away from a P type body layer formed in the gate width end portion by forming the active region wider on the outside of the gate width end portion than in a gate width center portion. By this, the N type drift layer having high concentration near the field oxide film corner portions are disposed further away from the P type body layer without increasing the device area.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: September 3, 2013
    Assignees: Semiconductor Components Industries, LLC., SANYO Semiconductor Co., Ltd.
    Inventors: Yasuhiro Takeda, Kazunori Fujita, Haruki Yoneda
  • Patent number: 8508175
    Abstract: A stepping motor includes two coils. A driver circuit drives the stepping motor by setting dissimilar phases of supply currents to these two coils. One terminal of one coil is connected to ground and another terminal is set to a high impedance state, and an induced voltage generated at that coil is detected as a voltage with respect to ground. Then, in accordance with the state of the detected induced voltage, the magnitude of motor drive current supplied to the two coils is controlled.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: August 13, 2013
    Assignees: Semiconductor Components Industries, LLC, Sanyo Semiconductor Co., Ltd
    Inventor: Kosaku Hioki
  • Patent number: 8508200
    Abstract: A power supply circuit comprises a power transistor, a differential amplifier, an I/V converter circuit, and an inverting amplifier, wherein the differential amplifier comprises a first current path in which a first resistor element, a first current mirror transistor, and a first control transistor are connected in series, and a second current path in which a second resistor element, a second current mirror transistor, and a second control transistor are connected in series, and the power supply circuit comprises a phase compensating capacitor element connected in parallel with the inverting amplifier, and a ripple removal rate improving capacitor element which is connected between ground and a connection point between the first resistor element and the first current mirror transistor, or between the ground and a connection point between the second resistor element and the second current mirror transistor.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: August 13, 2013
    Assignees: Semiconductor Components Industries, LLC, Sanyo Semiconductor Co., Ltd.
    Inventors: Ryuji Yamamoto, Yuichi Inakawa
  • Patent number: 8502360
    Abstract: The invention provides a resin sealing type electronic device having high reliability by eliminating a solder burr formed when a tie bar is cut. The invention also prevents a welding failure between a lead of the resin sealing type electronic device and an external electrode, and provides a large area for bonding an electronic component to the lead to prevent a connection failure. In the method of manufacturing the resin sealing type semiconductor device of the invention, in a case that a tie bar is cut after a semiconductor die and so on are mounted on a lead frame and these are resin-sealed, the cutting of the tie bar is performed from the side of the lead frame where a lead burr is formed by presswork. Furthermore, in the resin sealing type electronic device of the invention, a die capacitor is bonded to burr formation surfaces of a lead and an island using conductive paste. Since the burr formation surface has a larger surface area than a rounded surface, a large bonding area is obtained.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: August 6, 2013
    Assignees: SANYO Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Takeshi Sasaki, Masahiro Shindo
  • Patent number: 8502530
    Abstract: In an offset cancelling circuit of a Hall element, a voltage is applied from four directions and from outside such that a current flowing in the Hall element is switched by 90°, to set a first state through a fourth state, and output voltages of the Hall element in the first state through the fourth state are averaged.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: August 6, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Takashi Ogawa, Hironori Terazawa, Takahisa Nakai
  • Patent number: 8503590
    Abstract: Preceding filters receive the inputs of a plurality of received signals associated respectively with a plurality of antennas. Subsequent filters band-limit the plurality of inputted received signals, respectively. A first combining unit derives a weight vector for the plurality of band-limited received signals and performs array synthesis on the plurality of band-limited received signals, using the derived weight vector. The second combining unit performs array synthesis on the plurality of inputted received signal signals, using the derived weight vector. A demodulator demodulates the array-synthesis result.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: August 6, 2013
    Assignees: Semiconductor Components Industries, LLC, Sanyo Semiconductor Co., Ltd.
    Inventors: Yuichiro Tuskamizu, Yoshiharu Doi, Keisuke Higuchi
  • Patent number: 8498862
    Abstract: A speech signal processing apparatus includes a control signal output unit configured to receive as an input signal either one of a first speech signal corresponding to a sound uttered by a user and a second speech signal corresponding to a sound output from an eardrum of the user when the user utters a sound, and output a control signal corresponding to a noise level of the input signal, and a speech signal output unit configured to output either one of the first speech signal and the second speech signal according to the control signal.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: July 30, 2013
    Assignees: Sanyo Electric Co, Ltd., Sanyo Semiconductor Co., Ltd.
    Inventors: Kozo Okuda, Kenji Morimoto
  • Patent number: 8493296
    Abstract: A dark spot defect of an EL element is detected based on an emission brightness or a current flowing through the EL element when an element driving transistor which controls a drive current to be supplied to the EL element is operated in its linear operating region and the EL element is set to an emission level. A dim spot defect caused can be detected based on a current flowing through the EL element when the element driving transistor is operated in its saturation operating region and the EL element is set to the emission level. When an abnormal display pixel is detected based on an emission brightness, a pixel which is determined as an abnormal display pixel and which is not determined as a dark spot defect is determined, and the pixel is detected as a dim spot defect caused by the characteristic variation of the element driving transistor.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: July 23, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventor: Takashi Ogawa
  • Patent number: 8488287
    Abstract: In some embodiments, an overcurrent protection circuit is configured to operate in accordance with operation modes including a first operation mode in which when the power supply circuit is activated, the capacitor is charged until the terminal voltage reaches a first voltage, a second operation mode in which depending on a time period in which a current flowing through an output transistor of the power supply circuit exceeds a predetermined value, the capacitor is charged so that the terminal voltage increases from the first voltage toward a second voltage, and the power supply circuit is shut down when the terminal voltage reaches the second voltage, and a third operation mode in which when the power supply circuit is shut down, the capacitor is discharged until the terminal voltage reaches a third voltage, and the shutdown of the power supply circuit is released when the terminal voltage reaches the third voltage.
    Type: Grant
    Filed: June 1, 2010
    Date of Patent: July 16, 2013
    Assignees: Semiconductor Components Industries, LLC., SANYO Semiconductor Co., Ltd.
    Inventor: Yasuyuki Ueda
  • Patent number: 8482621
    Abstract: A vibration control equalizer for generating a vibration signal for determining a driving amount for an optical component on the basis of an output signal of a vibration detector for detecting vibration of an imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of an output signal of a position detector for detecting position of the optical component, and an internal CPU for controlling the vibration control equalizer and the position control equalizer are provided, and compensation for the output signal of the position detector is performed by the internal CPU.
    Type: Grant
    Filed: December 15, 2008
    Date of Patent: July 9, 2013
    Assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Yasunori Nagata, Tomofumi Watanabe, Katsuya Hiromoto