Abstract: A dissipation factor measurement is used to predict as-anodized fixture performance prior to actual use of the fixture in an etching environment. A dissipation factor measurement of the anodic coating determines its dielectric characteristics and correlates to the performance of the anodic coating in actual use. The ability to predict the performance of the fixture and its anodized coating permits the fixture to be repaired or replaced prior to complete failure.

Abstract: A feedback control system for providing automated and in-situ control of multi-component chemical concentrations in a liquid bath used for semiconductor processing. A sample from the liquid bath is injected into a carrier stream and routed to a conductivity detector and to an amperometric detector. Hydrogen peroxide concentration levels, as well as acidic or basic component concentration levels, are monitored and the measured readings are sent to a processor. If the concentration levels are not within tolerance for a given process, the processor meters in an appropriate amount of a needed chemical or diluting agent in order to bring the bath to an appropriate chemical concentration level. Additional detectors are employed in order to provide other types of analyses of the chemicals or contaminants present in the liquid bath and the amperometric detection need not be necessarily limited to H.sub.2 O.sub.2.

Abstract: A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo and in the clean rooms in order to prevent contamination of the wafers. Due to the modularity of the clean room structures, clean rooms can be reconfigured easily without significant impact on the on-going manufacturing operation. The modularity also permits portions of the facility to be deactivated when not needed.

Abstract: The present invention provides for a technique for taking advantage of the intrinsic electrical non-linearity of processing plasmas to add additional control variables that affect process performance. The technique provides for the adjustment of the electrical coupling circuitry, as well as the electrical excitation level, in response to measurements of the reactor voltage and current and to use that capability to modify the plasma characteristics to obtain the desired performance.

Abstract: The present invention describes a technique to control the radial profile of microwave power in an ECR plasma discharge. In order to provide for a uniform plasma density to a specimen, uniform energy absorption by the plasma is desired. By controlling the radial profile of the microwave power transmitted through the microwave window of a reactor, the profile of the transmitted energy to the plasma can be controlled in order to have uniform energy absorption by the plasma. An advantage of controlling the profile using the window transmission characteristics is that variations to the radial profile of microwave power can be made without changing the microwave coupler or reactor design.

Abstract: An isolator is disposed between a plasma reactor and its electrical energy source in order to isolate the reactor from the electrical energy source. The isolator operates as a filter to attenuate the transmission of harmonics of a fundamental frequency of the electrical energy source generated by the reactor from interacting with the energy source. By preventing harmonic interaction with the energy source, plasma conditions can be readily reproduced independent of the electrical characteristics of the electrical energy source and/or its associated coupling network.

Abstract: A rapid switching rotating disk reactor has an elongated injector for injecting an inert gas into the chamber of a rotating disk reactor. The nozzle of the injector is proximate to the center of the rotating wafer for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer. Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector is activated to provide an inert boundary layer atop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber is prevented from occurring. Once the chamber is filled with the subsequent fluid medium, the injector is turned off in order for the next processing to commence.

Abstract: A rapid switching rotating disk reactor has an elongated injector for injecting an inert gas into the chamber of a rotating disk reactor. The nozzle of the injector is proximate to the center of the rotating wafer for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer. Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector is activated to provide an inert boundary layer atop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber is prevented from occurring. Once the chamber is filled with the subsequent fluid medium, the injector is turned off in order for the next processing to commence.

Abstract: An ultra-pure chemical sampling apparatus has an elongated sampling tube which is lowered into the liquid to obtain samples of the chemical. The sampling tube extends the depth of the liquid and holes arranged along the tube provides for a representative sample to be obtained at different depths. The sampling tube is coupled to a collection bottle by a tubing of which a section of flexible tubing is coupled to a peristaltic pump to pump the liquid up the sampling tube, through the tubing and into the collection bottle. A cap is used to seal the sampling tube and a secondary containment receptacle is used to enclose the bottle in order to inhibit the escape of chemical fumes which could harm the environment or the person obtaining the sample.

Abstract: A baffle/settling chamber removes solid particulates from the exhaust of a semiconductor deposition equipment while reducing pressure fluctuation in the exhaust to provide a more uniform deposition of chemicals. A container having an inlet baffle plate, an outlet baffle plate and three settling plates disposed there between are disposed in a chamber and reside serially in the exhaust flow.

Abstract: A mobile container cart includes a pivoting mechanism for pivoting the container from a horizontal position to approximately 85-90 degree vertical position. The container rests atop the cart and has removable side and top plates. A semiconductor processing equipment assembly is loaded into the container while still hot. The container is sealed and pivoted to its vertical position for transport. Once at a servicing area, the container is repositioned horizontally and the top and side plates are removed. The cart now functions as a work bench for disassembling, servicing and reassembling the device. Diagnostics can be performed while the device is in the service area.

Abstract: A wafer chuck is used to support a circular silicon wafer, which was formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop raised portions of the chuck and is held in place by vaccum at the center and the perimeter. The rest of the underside of the wafer is physically separated from the chuck surface by pressurized gas. An annular laser beam is then used to melt the silicon from the seed outward to grow the wafer into a monocrystalline form.

Abstract: An apparatus for casting a single silicon wafer. A quartz drum having a slotted opening pours measured amounts of granulated or powdered silicon into a crucible. Heaters then melt the solid silicon to provide a molten silicon in the crucible. Utilizing controlled gas pressure, the molten silicon is poured from the crucible onto a wafer chuck in order to cast a single silicon wafer.

Abstract: A fluxmeter which provides for a pneumatic apparatus for measuring an amount of plasma energy flux flowing into a semiconductor wafer provides for a non-electrical apparatus of measuring energy flux. A bulb has one end exposed to the plasma while the opposite end is supported by a heat sink. When plasma is applied, gas pressure in the bulb changes due to a change in temperature. This change in gas pressure is measured to provide a direct correlation to a value of energy flux impinging on the fluxmeter.

Abstract: A fluxmeter pneumatically measures the amount of plasma energy impinging onto a semiconductor wafer. The fluxmeter is comprised of two hollow bulbs filled with gas. One bulb has one end exposed to the plasma while the opposite base end is supported by a substantially constant temperature wafer chuck. The other bulb has one end exposed to a heater and the opposite base end supported by the chuck. The two bulbs are coupled to a differential pressure sensor, which output is coupled to a servo for controlling the current to the heater. When plasma energy is applied, gas pressure in the first bulb changes and is sensed by the pressure sensor. The servo then adjusts the heater current until the gas pressure in the second bulb equals that of the first bulb. Upon reaching equilibrium the heater current is measured to determine the plasma energy flux impinging on the wafer.

Abstract: A wafer chuck is used to support a circular silicon wafer, which has formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop raised portions of the chuck and is held in place by vacuum at the center and the perimeter. The rest of the underside of the wafer is physically separated from the chuck surface by pressurized gas. An annular laser beam is then used to melt the silicon from the seed outward to grow the wafer into a monocrystalline form.

Abstract: Selective etching of a conformal nitride layer overlying a conformal oxide layer and a subsequent etching of the oxide layer provide for a staircase shaped sidewall spacer which is used to align source and drain regions during implantation. Extent of the implanted n-/n+ and/or p-/p+ regions within the substrate can be tightly controlled due to the tight dimensional tolerances obtained by the footprint of the spacer. Further the source/drain profiles can be utilized with elevated polysilicon and elevated polysilicon having subsequent salicidation.

Abstract: A quartz tube carousel device for vertically storing quartz tubes used in semiconductor fabrication. The carousel stores the quartz tubes in an upright position to conserve floor space and, further, provides for 360 degree rotation for ease of access. Laminar air flow is provided through openings in the device for purging the tubes. Optional features allow for different size, shape and number of tubes to be stored, as well as forced gas purging of the quartz tubes.

Abstract: An intelligent mass flow controller for controlling the mass flow of gas to a semiconductor processing chamber. A sensing circuit measures a difference in temperature across a sensing tube and translates this difference to adjust a valve for controlling the mass flow. A microcontroller which includes a CPU, signal processing and software routines continually monitors the various parameters and provide "on the fly" corrections, as well as providing diagnostics and record retention.

Abstract: A wafer chuck having a substantially hollow cavity therein utilizes the latent vaporization of a liquid to extract heat from the wafer. An insulated heater provides for heating the wafer to its desired operating point as rapidly as possible in order to bring the wafer to its operating point before plasma etching or deposition occurs.