Abstract: A semiconductor wafer processing system has a carrier including wafer slots. A process robot engages the carrier and installs the carrier into a rotor within a process chamber. The rotor has a tapered or stepped inside surface matching a tapered or stepped outside surface of the carrier. Wafer retainers on the carrier pivot to better secure wafers within the carrier.

Abstract: A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first and/or second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal, and the second electrode may move along with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: A wafer processing system has a wafer loading system accommodating sufficient wafer carriers to substantially maximize the processing speed capability of the processing system. Wafer carriers are placed into and removed from the loading system by one or two overhead carrier loading tracks. Carriers may be loaded or removed while other carriers are in work. One or more transfer robots may move wafers from the carriers to buffers. One or more process robots in a process module move wafers from buffers, or other locations, to processors in the process module.

Abstract: Reactors with agitators and methods for processing microfeature workpieces with such reactors. The agitators are capable of obtaining high, controlled mass-transfer rates that result in high quality surfaces and efficient wet chemical processes. The agitators generate high flow velocities in the fluid and contain the high energy fluid proximate to the surface of the workpiece to form high quality surfaces when cleaning, etching and/or depositing materials to/from a workpiece. The agitators also have short stroke lengths so that the footprints of the reactors are relatively small. As a result, the reactors are efficient and cost effective to operate. The agitators are also designed so that electrical fields in the processing solution can effectively operate at the surface of the workpiece.

Abstract: A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

Abstract: The present invention provides an apparatus and method for use in processing semiconductor workpieces. The new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a body, a retainer removeably attached to the body and a seal forming member. When a workpiece is placed on the chuck body and the retainer is engaged to the body, a peripheral portion of the back side of the workpiece is covered by the retainer while an interior region of the back side of the workpiece is exposed. The exposed back side of the workpiece is then subjected to a wet chemical etching process to thin the workpiece and form a relatively thick rim comprised of semiconductor material at the periphery of the workpiece. The thick rim or hoop imparts strength to the otherwise fragile, thinned semiconductor workpiece.

Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

Abstract: A wafer processing system has a moveable drain assembly having multiple drain rings. The drain rings may be spaced apart sufficiently to allow a process fluid applicator to move between them. Each drain ring provides a separate drain path, optionally in a separate recirculation loop carrying a single process fluid. The drain rings may be sequentially moved into position to collect process fluid moving off of the workpiece. As a result, process fluids may be more uniformly applied and used process fluids can be separately removed, collected, and either recycled or processed for disposal. Mixing of used process fluids is largely avoided. A lower process fluid outlet allows for processing the back side of the wafer as well, without flipping the wafer.

Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: A wafer plating apparatus has a rotor in a head including wafer retainers which properly hold a wafer on the rotor in position. A seal on the head seals plating bath liquid away from the edges of the wafer. After plating is completed and the wafer is moved away from the seal, the wafer retainers prevent the wafer from sticking to the seal. The rotor may include a backing plate adapted to support a wafer during processing, with the wafer retainers pivotally attached to the backing plate. Movement of the backing plate relative to a seal may move the wafer retainers between open and closed or engaged positions.

Abstract: Systems and methods for electrochemically processing microfeature workpieces are disclosed herein. In one embodiment, a system includes (a) a processing unit having a first flow system configured to convey a flow of a first processing fluid to a microfeature workpiece, (b) an electrode unit having an electrode and a second flow system configured to convey a flow of a second processing fluid at least proximate to the electrode, (c) a barrier between the processing unit and the electrode unit to separate the first and second processing fluids, and (d) a water balance unit for maintaining the concentration of water in the first processing fluid within a desired range.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: The invention provides an improved contact ring and an improved workpiece support, each of which is useful alone or jointly with the other in a workpiece holder for electrochemically treating microelectronic workpieces. Several embodiments of the invention provide a composite contact ring having a dielectric base carrying a conductor which delivers electric power to a microelectronic workpiece. The dielectric base may be rigid and define a plurality of rigid fingers, each of which carries a separate electrical contact of the conductor. Such a contact ring is expected to have a long service life and enhance uniformity of electrochemical treatment. Several embodiments of the invention provide a workpiece support which induces a control the flexure of a microelectronic workpiece without damaging the workpiece. This controlled flexure can ensure more uniform contact between the workpiece and a contact assembly despite variations in the workpiece and/or the contact assembly.

Abstract: Methods and systems for electrochemically processing microfeature workpieces are described herein. In one embodiment, a process for electrochemically treating a surface of a plurality of microfeature workpieces in an electrochemical treating chamber that includes a processing unit separated from an electrode unit by an ion-permeable barrier is described. The process involves an idle stage wherein during the idle stage, processing fluid components are prevented from transferring between the first processing fluid and the second processing fluid. The described system includes a flow control system for controlling the flow of processing fluid to achieve separation of a processing fluid from the barrier during the idle stage.

Abstract: The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a result, the wafers produced by the present process are less susceptible to breaking. The unique system also offers an improved structure for handling thinned wafers and reduces the number of processing steps. This results in improved yields and improved process efficiency.

Abstract: Chambers, systems, and methods for electrochemically processing microfeature workpieces are disclosed herein. In one embodiment, an electrochemical deposition chamber includes a processing unit having a first flow system configured to convey a flow of a first processing fluid to a microfeature workpiece. The chamber further includes an electrode unit having an electrode and a second flow system configured to convey a flow of a second processing fluid at least proximate to the electrode. The chamber further includes a nonporous barrier between the processing unit and the electrode unit to separate the first and second processing fluids. The nonporous barrier is configured to allow cations or anions to flow through the barrier between the first and second processing fluids.

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process.

Abstract: An apparatus for thermally processing a microelectronic workpiece comprises a rotatable carousel assembly configured to support at least one workpiece. A driver is coupled to the carousel assembly and rotates the carousel assembly, moving the workpiece between a loading station, a heating station and a cooling station. The loading, heating and cooling stations are radially positioned about a center axis of the carousel assembly. The heating station includes a heating element and an actuator for moving the heating element into thermal engagement with the workpiece in the heating station. The cooling station includes a cooling element and an actuator for moving the cooling element into thermal engagement with the workpiece in the cooling station. A process fluid distribution manifold for delivering process fluid to the workpieces at each station extends through a central opening in the carousel assembly.