Abstract: The present invention provides a system that enables the use of electrophoretic resists in the microfabrication industry for the production of microelectronic devices and is of sufficiently high quality to be used as a replacement for, or supplement to, current photoresist deposition technology. This system enables the application of electrophoretic resists in automated equipment that meets the standards for cleanliness and production throughput desired by the microelectronic fabrication industry.

Abstract: Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

Abstract: An aqueous thiourea-free gold etching bath for electrolytically etching gold from a microelectronic workpiece. One embodiment of the aqueous thiourea-free bath contains: (a) about 0.5–1.5 M iodide; (b) about 0.1–0.3 M sulfite; and (c) about 1.0–3.0 g/L wetting agent. The bath is useful in a process for electrolytically etching gold from a microelectronic workpiece. A tool system in which the baths and processes of the present invention may be used is also described.

Abstract: The present invention provides a system that enables the use of electrophoretic resists in the microfabrication industry for the production of microelectronic devices and is of sufficiently high quality to be used as a replacement for, or supplement to, current photoresist deposition technology. This system enables the application of electrophoretic resists in automated equipment that meets the standards for cleanliness and production throughput desired by the microelectronic fabrication industry.

Abstract: The present invention provides a system that enables the use of electrophoretic resists in the microfabrication industry for the production of microelectronic devices and is of sufficiently high quality to be used as a replacement for, or supplement to, current photoresist deposition technology. This system enables the application of electrophoretic resists in automated equipment that meets the standards for cleanliness and production throughput desired by the microelectronic fabrication industry.

Abstract: An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Abstract: An apparatus for thermally processing a microelectronic workpiece is provided. The apparatus comprises a rotatable carousel assembly configured to support at least one workpiece. A driver is coupled to the carousel assembly and rotates the carousel assembly, moving the workpiece between a loading station, a heating station and a cooling station. The loading, heating and cooling stations are radially positioned and approximately equally spaced about a center axis of the carousel assembly. The heating station includes a heating element and an actuator for moving the heating element into thermal engagement with the workpiece in the heating station. The cooling station includes a cooling element and an actuator for moving the cooling element into thermal engagement with the workpiece in the cooling station. A process fluid distribution manifold for delivering process fluid to the workpieces at each station extends through a central opening in the carousel assembly.

Abstract: A machine for processing a flat workpiece or wafer has a head, which spins the wafer between upper and lower weirs in a base. The head is spaced apart from the base by an air gap. A vacuum source attached to an exhaust opening in the base draw air through the air gap, to reduce or eliminate movement of process chemicals into the head. Corrosion of head components by process chemicals is reduced. The disadvantages of having a mechanical seal between the base and the head are also eliminated.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

Abstract: A semiconductor processor for spray coating wafers or other semiconductor articles. The processor has a compartment in which are mounted a wafer transfer, coating station and thermal treatment station. The coating station has a spray processing vessel in which a movable spray-head and rotatable wafer holder. The spray station has coating viscosity control features. An ultrasonic resonating spray-head is precisely supplied with coating from a metering pump. The heat treatment station heat cures the coating and then cools the wafer. The system allows coatings to be applied in relatively uniform conformational layers upon irregular surfaces.

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectric workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and the metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract: A rotor that may be used by itself or in a processing machine for processing semiconductor wafers includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

Abstract: The invention provides an improved contact ring and an improved workpiece support, each of which is useful alone or jointly with the other in a workpiece holder for electrochemically treating microelectronic workpieces. Several embodiments of the invention provide a composite contact ring having a dielectric base carrying a conductor which delivers electric power to a microelectronic workpiece. The dielectric base may be rigid and define a plurality of rigid fingers, each of which carries a separate electrical contact of the conductor. Such a contact ring is expected to have a long service life and enhance uniformity of electrochemical treatment. Several embodiments of the invention provide a workpiece support which induces a control the flexure of a microelectronic workpiece without damaging the workpiece. This controlled flexure can ensure more uniform contact between the workpiece and a contact assembly despite variations in the workpiece and/or the contact assembly.

Abstract: The present invention provides a semiconductor workpiece support and contact assembly for providing localized electrical connections with the device side of the workpiece. The additional contact points help overcome the terminal effect caused by very high sheet resistance of thin barrier layers and enable plating a conformal seed layer or feature filling directly on thin barrier layers. By utilizing the streets that separate individual dice on a workpiece to make electrical connections with the workpiece and provide localized distribution of plating chemistry, the present invention provides a more uniform and conformal metallization layer.

Abstract: A reactor for electroplating a workpiece includes a vessel having a ring contact arranged to support a workpiece in a horizontal orientation. In an embodiment of the invention, an electrode is arranged below the ring contact, and a pressing member is arranged above the ring contact to press a workpiece into electrical engagement with the ring contact. The vessel may be adapted to contain an electroplating fluid between a top of the ring contact and the electrode. In one embodiment, a movable intermediate workpiece support assembly is carried by the vessel, the support assembly being actuatable to lower a workpiece carried thereby to deliver the workpiece to be supported accurately and precisely on the ring contact.

Abstract: The present invention provides an apparatus and method for use in processing semiconductor workpieces. The new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a body, a retainer removeably attached to the body and a seal forming member. When a workpiece is placed on the chuck body and the retainer is engaged to the body, a peripheral portion of the back side of the workpiece is covered by the retainer while an interior region of the back side of the workpiece is exposed. The exposed back side of the workpiece is then subjected to a wet chemical etching process to thin the workpiece and form a relatively thick rim comprised of semiconductor material at the periphery of the workpiece. The thick rim or hoop imparts strength to the otherwise fragile, thinned semiconductor workpiece.