Abstract: An intermediate module comprising a dimensionally stable mounting module and a first device attached to the dimensionally stable mounting module. The dimensionally stable mounting module can include a front docking unit with front alignment elements for connecting the mounting module to a load/unload module, and a rear docking unit with rear alignment elements for connecting the mounting module to a main processing unit. The mounting module can further include a deck between the front docking unit and the rear docking unit, positioning elements at the deck, and attachment elements at the deck. The first device can be a processing chamber, an annealing station, a metrology station, a buffer station, or another type of component for holding or otherwise performing a function on a workpiece.

Abstract: Although there are several inventions disclosed herein, the present application is directed to a reactor for electrochemically processing a microelectronic workpiece. The reactor comprises a movable electrode assembly that is disposed for movement along a motion path. The motion path includes at least a portion thereof over which the electrode assembly is positioned for processing at least one surface of the microelectronic workpiece. A cleaning electrode is located along the motion path of the movable electrode assembly. In one embodiment, a programmable controller is connected to direct the movable electrode assembly to move to the cleaning electrode during a cleaning cycle. At that time, the programmable controller connects the movable electrode assembly as an anode and the cleaning electrode as a cathode for cleaning of the movable electrode assembly.

Abstract: The invention provides an apparatus for cleaning and drying a container for semiconductor workpieces. The apparatus comprises a load port with a fixture that receives a dirty container and delivers it to a deck assembly with a carrier that removably receives the container for further handling. While the container is received by the carrier, a robot with a first end effector removes the container door and places it on a portion of the carrier. The robot includes a second end effector that engages the carrier and elevates the carrier and container for insertion into a process chamber. The process chamber includes a rotor with at least one receptacle wherein the rotor is rotated to create both high pressure and low pressure regions. Once the container and carrier are loaded into the rotor, the rotor is rotated and means for cleaning injects a processing fluid onto the container and carrier. After a rinse stage and while the rotor is rotating, the means for drying delivers air across the container and carrier.

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract: Metal seed layers and/or barrier layers are treated to render them more suitable for subsequent electrochemical deposition of metals thereon. The processes employ thermal techniques to reduce metal oxides that have formed on the surface of the seed layers and/or barrier layers.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.

Abstract: In a workpiece process end point detection system, light is diffused and then light intensity or color is sensed. Optical noise is greatly reduced and more accurate end point detection can be made. A light emitter and a light sensor may be located within a workpiece process chamber. A housing around the light emitter and the light sensor seals out process fluids and also diffuses light passing through. The diffused light may be optically filtered before reaching the light sensor.

Abstract: In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

Abstract: A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: Tools having mounting modules with registration systems are disclosed. The mounting module includes positioning elements for precisely locating a processing chamber and a transport system that moves workpieces to and from the processing chamber. The relative positions between positioning elements of the module are fixed so that the transport system does not need to be recalibrated when the processing chamber is removed and replaced with another processing chamber. The processing chamber includes a paddle device for agitating processing liquid at a process surface of the workpiece. The paddle device, the processing chamber, and electrodes within the processing chamber are configured to reduce the likelihood for electrical shadowing created by the paddles at the surface of the workpiece, and to account for three-dimensional effects on the electrical field as the paddles reciprocate relative to the workpiece.

Abstract: Reactors having multiple electrodes and/or enclosed reciprocating paddles are disclosed. The reactor can include multiple electrodes spaced apart from a process location to provide virtual electrodes proximate to the process location for transferring material to or from the workpiece. A magnet may be positioned proximate to the process plane to orient magnetically sensitive material deposited on the workpiece. The electrodes may be removable from the reactor without passing them through the magnet to reduce interference between the electrodes and the magnet. The workpiece may be carried by a rotatable workpiece support to orient the workpiece for processing. At least one of the electrodes can operate as a current thief to reduce terminal effects at the periphery of the workpiece.

Abstract: Paddles and enclosures for processing microfeature workpieces are disclosed. A paddle device having multiple paddles is positioned in an enclosure to reciprocate back and forth along a generally linear path. The clearances between the paddles, the workpiece and the walls of the chamber are relatively small to increase the flow agitation at the surface of the workpiece and enhance the mass transfer process occurring there. The paddles are shaped to reduce or eliminate electrical shadowing effects created at the surface of the workpiece during electrochemical processing. Paddles on the same paddle device may have different shapes to reduce the likelihood for creating three-dimensional effects in the flow field proximate to the surface of the workpiece. The reciprocation stroke of the paddles may shift to further reduce shadowing.

Abstract: In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed over, against or onto the liquid layer of the surface of the wafer, in the presence of an etchant. The flow of gas thins the liquid layer at high points or areas on the surface of the wafer more than at low points or areas on the wafer surface. Consequently, the high points are oxidized and etched away more than the low points. As a result, the wafer surface is smoothed and polished.

Abstract: An integrated tool is provided including at least one workpiece processing station having a paddle assembly. In accordance with another independent aspect of the present invention, the workpiece processing station is adapted for adjusting the level of the processing fluid relative to a workpiece, wherein the portion of the workpiece to be processed and possibly the paddle is selectively immersed within the processing fluid. In accordance with a further independent aspect of the present invention, a paddle is provided for use proximate to a workpiece in a workpiece processing station. The paddle includes a one or more sets of delivery ports and one or more sets of fluid recovery ports. In at least one embodiment, the paddle provides for agitation of a processing fluid proximate to the surface of the workpiece. In at least another embodiment, the paddle provides for the delivery and/or recovery of one or more fluids to the portion of the workpiece to be processed.

Abstract: An integrated tool that enables wet chemical processing chambers, lift-rotate units and other hardware to be quickly interchanged without having to recalibrate the transport system or other components to the replacement items. These tools are expected to reduce the down time associated with repairing or maintaining processing chambers and/or lift-rotate units so that the tools can maintain a high throughput. Several aspects of these tools are particularly useful for applications that have stringent performance requirements because components are more likely to require maintenance more frequently, and reducing the down time associated with maintaining such components will significantly enhance the integrated tool.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Abstract: A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.