Abstract: A LoRa receiver for processing digital chirp spread-spectrum modulated signals with an advanced module for the determination of the timing error and/or of the frequency error arranged to estimate a position of a frequency discontinuity in each symbol, extract one or more frequency-continuous fragments out of each symbol, dechirp the coherent fragments, determine a timing error, and/or a frequency error, and/or a modulation value, and/or a SNR.

Abstract: An integrated circuit has a CMOS signal path coupled for receiving a data signal. A compensation circuit is coupled to a power supply rail of the CMOS signal path for injecting a compensation current into the power supply rail. The compensation circuit can be a charge pump operating in response to the data signal to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a replica CMOS signal path to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a voltage regulator and current mirror including an input coupled to the voltage regulator. The replica CMOS signal path receives an operating potential from the voltage regulator. An output of the current mirror injects the compensation current into the power supply rail each transition of the data signal.

Abstract: Advanced modulation and demodulation schemes for LoRa or equivalent chirp spread spectrum transmissions, with differential modulation and symbol repetition improve the sensitivity in combination with soft demodulation methods.

Abstract: A capacitive proximity sensor for use in mobile devices such as smartphones and connected tables, in which it is used to switch off a display (70) when the device is brought to the ear. The capacitive sensor is arranged for rejecting spurious detection induced, for example, by condensation, ingress of water, or thermal drift, based on the time variations of a capacity seen by the readout circuit (80), Additionally, the proximity sensor may integrate signals form motion sensors, temperature sensors or other sensors, to discriminate spurious proximity signals.

Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.

Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.

Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Abstract: A proximity sensor, and a portable device equipped therewith, with at least two sense electrodes, one influencing the other. By reading twice the capacity of one electrode, while either setting the potential of the counter-electrode to guard or letting it float, the sensor of the invention discriminates between a body part, or another electrically equivalent object, and low-permittivity objects.

Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.

Abstract: A system is disclosed that includes a wireless power receiver, a battery charging system coupled to the wireless power receiver and configured to charge a battery using power received from the wireless power receiver and a wireless data communication system coupled to the wireless power receiver and the battery charging system, the wireless data communication system configured to determine a power requirement and to transmit the power requirement using the wireless power receiver.

Abstract: A TVS circuit having a first diode with a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is coupled between the first node and second node. A fourth diode is coupled between the first node and third node. A fifth diode is coupled between the second node and a second terminal. A sixth diode is coupled between the second terminal and the third node. A seventh diode can be coupled between the second terminal and an intermediate node between the fifth diode and sixth diode. The first diode is disposed on a first semiconductor die, while the second diode is disposed on a second semiconductor die. Alternatively, the first diode and second diode are disposed on a single semiconductor die.

Abstract: A capacitive proximity sensor for use in mobile devices such as smartphones and connected tables, in which it is used to switch off a display (70) when the device is brought to the ear, and to reduce selectively the RF power when the device is in close proximity to a body part of a user, in order to fulfil regulatory SAR limits. The capacitive sensor uses two electrodes (60, 30), the first of which may also serve as RF antenna, and the other is preferably on the back of the phone and is opposite the display.

Abstract: A proximity sensor, and a portable device equipped therewith, with at least two superposed sense electrodes, one partially screening the other. By reading the capacity first of one electrode, then of the other, while setting the potential of the counter-electrode either to ground or to guard, the sensor of the invention discriminates between a body part, or another electrically equivalent object, and water drops at closer distance.

Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a substrate panel with a substrate having a first substrate area and a second substrate area outside a footprint of the first substrate area. A plurality of semiconductor die or discrete IPDs is disposed over the first substrate area. Substrate area 102a has electrical interconnect for the semiconductor die. A molding compound is disposed over the semiconductor die and first substrate area using a transfer mold process, which leaves mold culls and mold gates disposed over the second substrate area. A substrate edge is formed in the second substrate area under the mold gates. The substrate edge extends into the first substrate area under the molding compound to reinforce the mold gates and reduce cracking during mold degating. The substrate edge can have a variety of forms such as parallel bars, diagonal bars, orthogonal bars, and combinations thereof.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A signal detection circuit has a first differential amplifier including a first input coupled for receiving a data signal, and a second input coupled for receiving a threshold signal. A current steering circuit is coupled to an output of the first differential amplifier to establish a threshold for the first differential amplifier. A latch has an input coupled to the output of the first differential amplifier for latching a signal detect. A second amplifier has an input coupled to the output of the first differential amplifier and an output coupled to the input of the latch. A third amplifier has an input coupled to the output of the first differential amplifier and an output providing the data signal. The current steering circuit can be disabled which removes the need for the third amplifier as the data signal path is through second amplifier.

Abstract: A wireless charging receiver that provides power delivered from a transmitter over an wireless path. The receiver includes a rectifier circuit, an LC circuit coupled to the rectifier circuit and the transmitter, a single switch modulation circuit coupled to the rectifier circuit and the LC circuit, an output circuit coupled to the rectifier circuit. The receiver further comprises an in-band controller coupled to the LC circuit and the single switch modulation circuit operational to detect a reflected parameter from incident RF power. A resistance value of the single switch modulation circuit can be set in response to a detected parametric value of the LC circuit. The resistance value can be set to cause the rectifier circuit to generate one of a stable RDCV value, an increased RDCV value, and a decreased RDCV value with respect to a normal PDC value in response to the received RF power.