Patents Assigned to Semtech Corporation
  • Publication number: 20200118981
    Abstract: A circuit, comprising a diode, a conductive upper support disposed on top of the diode and electrically coupled to the diode, a conductive lower support disposed underneath the diode and electrically coupled to the diode, a mechanical support disposed adjacent to the diode, the conductive upper support and the conductive lower support, an insulator disposed underneath the mechanical support, an upper terminal coupled to the mechanical support and electrically coupled to the conductive upper support and a lower terminal coupled to the insulator and electrically coupled to the conductive lower support.
    Type: Application
    Filed: October 14, 2019
    Publication date: April 16, 2020
    Applicant: Semtech Corporation
    Inventors: David Francis Courtney, Angel Mario Cano Garza
  • Patent number: 10606411
    Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: March 31, 2020
    Assignee: Semtech Corporation
    Inventors: Chaouki Rouaissia, Jerald G. Ott, III
  • Patent number: 10608589
    Abstract: A loss of signal circuit has a multiplexer and a photodiode coupled to a first input of the multiplexer. A reference signal generator is coupled to a second input of the multiplexer. An amplifier is coupled to an output of the multiplexer. A demultiplexer includes an input of the demultiplexer coupled to an output of the amplifier. A first capacitor is coupled to a first output of the demultiplexer. A second capacitor is coupled to a second output of the demultiplexer. A comparator has a first input coupled to the first output of the demultiplexer and a second input of the comparator is coupled to the second output of the demultiplexer.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: March 31, 2020
    Assignee: Semtech Corporation
    Inventor: Christopher David Ainsworth
  • Publication number: 20200067455
    Abstract: A loss of signal circuit has a multiplexer and a photodiode coupled to a first input of the multiplexer. A reference signal generator is coupled to a second input of the multiplexer. An amplifier is coupled to an output of the multiplexer. A demultiplexer includes an input of the demultiplexer coupled to an output of the amplifier. A first capacitor is coupled to a first output of the demultiplexer. A second capacitor is coupled to a second output of the demultiplexer. A comparator has a first input coupled to the first output of the demultiplexer and a second input of the comparator is coupled to the second output of the demultiplexer.
    Type: Application
    Filed: August 23, 2018
    Publication date: February 27, 2020
    Applicant: Semtech Corporation
    Inventor: Christopher David Ainsworth
  • Patent number: 10510741
    Abstract: A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: December 17, 2019
    Assignee: Semtech Corporation
    Inventors: Maykel Ghorbanzadeh, Jonathan Clark, William A. Russell
  • Patent number: 10492022
    Abstract: The present invention proposed a weighted Centroid Localisation (WCL) algorithm, which does the location estimation based only on the known positions of the gateways and the measurements of the Received Signal Strength Indication (RSSI) at the gateways. The algorithm computes the weight of the gateway based on their rank when the gateways are sorted by their relative RSSI. Simulations have demonstrated the algorithm's robustness under different multipath/fading channel conditions and its good location performance.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: November 26, 2019
    Assignee: Semtech Corporation
    Inventor: Mengkang Peng
  • Publication number: 20190355689
    Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.
    Type: Application
    Filed: July 29, 2019
    Publication date: November 21, 2019
    Applicant: Semtech Corporation
    Inventors: Kok Khoon Ho, Jonathan Clark, John MacLeod
  • Publication number: 20190346964
    Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.
    Type: Application
    Filed: July 26, 2019
    Publication date: November 14, 2019
    Applicant: Semtech Corporation
    Inventors: Chaouki Rouaissia, Jerald G. Ott, III
  • Patent number: 10469115
    Abstract: A sensor for a portable connected device comprising a filter 30 is arranged to reduce a noise component on a sampled input signal, wherein the filter is arranged to consider only input measurements that change systematically in a same direction, updating an output value when all the input samples in a predetermined time window are above or below a current output value and, repeating the current output value when the input samples in the time window are below and above the current output value.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: November 5, 2019
    Assignee: Semtech Corporation
    Inventors: Olivier Nys, Chaouki Rouaissia
  • Publication number: 20190319086
    Abstract: A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 17, 2019
    Applicant: Semtech Corporation
    Inventor: Christopher David Ainsworth
  • Publication number: 20190296786
    Abstract: A wireless charging receiver that provides power delivered from a transmitter over an wireless path. The receiver includes a rectifier circuit, an LC circuit coupled to the rectifier circuit and the transmitter, a single switch modulation circuit coupled to the rectifier circuit and the LC circuit, an output circuit coupled to the rectifier circuit. The receiver further comprises an in-band controller coupled to the LC circuit and the single switch modulation circuit operational to detect a reflected parameter from incident RF power. A resistance value of the single switch modulation circuit can be set in response to a detected parametric value of the LC circuit. The resistance value can be set to cause the rectifier circuit to generate one of a stable RDCV value, an increased RDCV value, and a decreased RDCV value with respect to a normal PDC value in response to the received RF power.
    Type: Application
    Filed: August 10, 2018
    Publication date: September 26, 2019
    Applicant: Semtech Corporation
    Inventors: Wen Cai, Feng Hou
  • Patent number: 10423278
    Abstract: A portable device including drift-compensated capacitive proximity sensor that exploits a special method of drift compensation based on the variation of the measured proximity signal. The drift is tracked when the variation is within a stated interval, and frozen when the variation is outside. The sensor is capable of following a drift not only when the phone is inactive, but also when it is close to the body of the user, by freezing the tracking when the capacity varies steeply, as when the user moves the device, and resuming it when the variation is within acceptable limits.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: September 24, 2019
    Assignee: Semtech Corporation
    Inventors: Chaouki Rouaissia, Sébastien Grisot
  • Patent number: 10425362
    Abstract: A wireless communication system, comprising one or several nodes (A) equipped by a wireless radio interface that is adapted for transmitting digital messages modulated in the form of a series of frequency chirps, for example, LoRa-modulated radio signals. The message is received simultaneously by several base stations (C, D, E), and a server (S) is arranged for dividing the frames by the diverse stations and recombining a corrected frame for the intended recipient (B) based on error codes. Advantageously, the base stations being adapt their timing error compensation strategy when the error codes indicate a corruption of the message.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: September 24, 2019
    Assignee: Semtech Corporation
    Inventors: Ludovic Champion, Olivier Bernard André Seller
  • Publication number: 20190287959
    Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.
    Type: Application
    Filed: March 5, 2019
    Publication date: September 19, 2019
    Applicant: Semtech Corporation
    Inventors: Lei Hua, William Allen Russell, Changjun Huang, Bo Liang, Pengcheng Han
  • Patent number: 10410988
    Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: September 10, 2019
    Assignee: Semtech Corporation
    Inventors: Kok Khoon Ho, Jonathan Clark, John MacLeod
  • Publication number: 20190274197
    Abstract: A circuit comprising a first regulator coupled to a voltage input, a second regulator coupled to a voltage output and a switch coupled to the first regulator and the second regulator, wherein the switch is configured to provide voltage to a load from the voltage input when the voltage input is greater than a first predetermined voltage, and to provide voltage to the load from the voltage output when the voltage input is lower than a second predetermined voltage.
    Type: Application
    Filed: March 5, 2019
    Publication date: September 5, 2019
    Applicant: Semtech Corporation
    Inventors: Chin Chang, Woody Chen
  • Patent number: 10404165
    Abstract: Described herein are systems and methods for providing a variable switching frequency for a power supply. The system includes a controller and a filter. The controller generates a switching frequency for a power supply. The switching frequency is modified as a function of an input voltage and an output voltage. The filter provides the output voltage to a load based at least in part on the switching frequency generated by the controller. In one example, the controller adaptively modifies the switching frequency as a function of the input voltage and the output voltage in order to maintain a peak to peak current for an inductor.
    Type: Grant
    Filed: April 30, 2013
    Date of Patent: September 3, 2019
    Assignee: SEMTECH CORPORATION
    Inventors: Min Mao, Steven M. Granger, Kun Xing
  • Patent number: 10396855
    Abstract: A mobile device includes a conductive element and a ground node. The conductive element is configured to be detected by a proximity sensor. A switch is coupled between the conductive element and ground node. The conductive element is coupled to the ground node by closing the switch. A first memory element is configured to control the switch. The first memory element includes a register bit coupled to a control terminal of the switch. A data output is configured to control the switch. A FIFO is configured to provide data to the data output. The first memory element includes a FIFO. A capacitive touch controller is configured to measure a capacitance of the conductive element. A digital processing unit is configured to convert the capacitance of the conductive element to a bit of data. A second memory element is configured to store the bit of data.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 27, 2019
    Assignee: Semtech Corporation
    Inventor: Chaouki Rouaissia
  • Publication number: 20190243509
    Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 8, 2019
    Applicant: Semtech Corporation
    Inventors: Chaouki Rouaissia, Jerald G. Ott, III
  • Publication number: 20190214735
    Abstract: An antenna is disclosed that includes a ground plane extending in a first direction on a substrate and a radiating element occupying a same plane as the ground plane on the substrate, and coupled to the ground plane, the radiating element comprising a first portion with a first end and a second end extending in a substantially parallel direction to the ground plane, a feed line coupled to the first end of the first portion of the radiating element and extending in a substantially perpendicular direction from the first portion of the radiating element and a second portion having a third end and a fourth end, wherein the third end is coupled to the ground plane and the fourth end is coupled to the radiating element at a point between the first end and the second end.
    Type: Application
    Filed: December 21, 2018
    Publication date: July 11, 2019
    Applicant: Semtech Corporation
    Inventors: Paul James Garrity, Ross Elliot Teggatz, Antony Eugene Brinlee