Abstract: A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.

Abstract: Method of timing, in a receiver, a radio signal generated in and transmitted from a transmitter, the radio signal comprising a series of frequency chirps, the system including: receiving the radio signal from the transmitter; synthesizing projection vectors comprising a series of frequency chirps that are a complex-conjugate image of those comprised in the radio signal the projection vectors being time-shifted relative to one another by determined shift intervals of time; multiplying the received radio signal by the projection vectors and accumulating the results; interpolating the accumulating results to determine a peak time shift.

Abstract: A circuit controls a dynamic time constant to remove DC offset from a received optical data signal. The circuit has a first capacitor coupled between a first terminal and a second terminal. A first resistance network is coupled between the second terminal and a reference voltage. A control circuit has a first output coupled to a control input of the first resistance network. The control circuit monotonically increases an effective resistance of the first resistance network to increase the dynamic time constant. The first resistance network has a resistor coupled to the second terminal, and a transistor with a first conduction terminal coupled to the resistor, a second conduction terminal coupled to the reference voltage, and a control terminal coupled to the first output of the control circuit. The first capacitor has a variable capacitance. The monotonic increase in the dynamic time constant can be linear or non-linear.

Abstract: A photodiode current comparison circuit has a first current source coupled to a circuit node configurable to operate in a first mode, a second current source coupled to the circuit node configurable to operate in a second mode opposite the first mode, and a third current source switchable to route a current to the circuit node in response to a data signal using a transistor coupled between the circuit node and the third current source. A photodiode is coupled to the circuit node. In a first configuration, an anode of the photodiode is coupled to the circuit node and a cathode of the photodiode is coupled to a power supply terminal. In a second configuration, a cathode of the photodiode is coupled to the circuit node and an anode of the photodiode is coupled to a power supply terminal. An amplifier provides an error signal of the photodiode.

Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.

Abstract: A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.

Abstract: A method for controlling power delivery from a transmitter to a receiver, comprising generating a control at a processor to actuate a distance measurement device. Transmitting the control to the distance measurement device. Activating the distance measurement device to measure a distance between a transmitter and a receiver. Transmitting a data packet from the distance measurement device to the processor that contains a plurality of data fields that have a value that represents the distance. Determining whether the distance is less than a predetermined threshold using the processor. Generating an error signal if the distance is less than the predetermined threshold to prevent the transmitter from generating an electromagnetic field that would cause damage to the receiver. Setting a ping signal strength as a function of the distance. Generating an electromagnetic field as a function of the ping signal strength.

Abstract: An OMA controller circuit utilizes a first ADC with an input coupled for receiving a residual error signal indicating a difference between a monitoring signal and a target data signal. A second ADC has an input coupled for receiving the target data signal. A first digital filter has an input coupled to an output of the first ADC, and a second digital filter has an input coupled to an output of the second ADC. A digital multiplier has a first input coupled to an output of the first digital filter and a second input coupled to an output of the second digital filter. An integrator has an input coupled to an output of the digital multiplier and an output providing an average error signal with sign and magnitude. The digital multiplier uses a four quadrant multiplier to perform a cross-correlation on the residual error and the target data signal.

Abstract: An automatic gain control circuit controls a gain of a burst mode amplifier. A peak detector includes an input coupled to an output of the amplifier. A plurality of resistors is coupled in series between an input of the first amplifier and the output of the first amplifier for setting the gain of the amplifier. A first gain stage is responsive to an output signal of the peak detector for disabling a first resistor of the plurality of resistors to alter the gain of the first amplifier. A second gain stage is responsive to the output signal of the peak detector for disabling a second resistor of the plurality of resistors to alter the gain of the first amplifier. A comparator responsive to the output signal of the peak detector causes a pulse generator to enable the first gain stage and second gain stage each burst mode.

Abstract: A circuit, comprising a diode, a conductive upper support disposed on top of the diode and electrically coupled to the diode, a conductive lower support disposed underneath the diode and electrically coupled to the diode, a mechanical support disposed adjacent to the diode, the conductive upper support and the conductive lower support, an insulator disposed underneath the mechanical support, an upper terminal coupled to the mechanical support and electrically coupled to the conductive upper support and a lower terminal coupled to the insulator and electrically coupled to the conductive lower support.

Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.

Abstract: A loss of signal circuit has a multiplexer and a photodiode coupled to a first input of the multiplexer. A reference signal generator is coupled to a second input of the multiplexer. An amplifier is coupled to an output of the multiplexer. A demultiplexer includes an input of the demultiplexer coupled to an output of the amplifier. A first capacitor is coupled to a first output of the demultiplexer. A second capacitor is coupled to a second output of the demultiplexer. A comparator has a first input coupled to the first output of the demultiplexer and a second input of the comparator is coupled to the second output of the demultiplexer.

Abstract: A loss of signal circuit has a multiplexer and a photodiode coupled to a first input of the multiplexer. A reference signal generator is coupled to a second input of the multiplexer. An amplifier is coupled to an output of the multiplexer. A demultiplexer includes an input of the demultiplexer coupled to an output of the amplifier. A first capacitor is coupled to a first output of the demultiplexer. A second capacitor is coupled to a second output of the demultiplexer. A comparator has a first input coupled to the first output of the demultiplexer and a second input of the comparator is coupled to the second output of the demultiplexer.

Abstract: A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.

Abstract: The present invention proposed a weighted Centroid Localisation (WCL) algorithm, which does the location estimation based only on the known positions of the gateways and the measurements of the Received Signal Strength Indication (RSSI) at the gateways. The algorithm computes the weight of the gateway based on their rank when the gateways are sorted by their relative RSSI. Simulations have demonstrated the algorithm's robustness under different multipath/fading channel conditions and its good location performance.

Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.

Abstract: A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.

Abstract: A sensor for a portable connected device comprising a filter 30 is arranged to reduce a noise component on a sampled input signal, wherein the filter is arranged to consider only input measurements that change systematically in a same direction, updating an output value when all the input samples in a predetermined time window are above or below a current output value and, repeating the current output value when the input samples in the time window are below and above the current output value.

Abstract: A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.

Abstract: A wireless charging receiver that provides power delivered from a transmitter over an wireless path. The receiver includes a rectifier circuit, an LC circuit coupled to the rectifier circuit and the transmitter, a single switch modulation circuit coupled to the rectifier circuit and the LC circuit, an output circuit coupled to the rectifier circuit. The receiver further comprises an in-band controller coupled to the LC circuit and the single switch modulation circuit operational to detect a reflected parameter from incident RF power. A resistance value of the single switch modulation circuit can be set in response to a detected parametric value of the LC circuit. The resistance value can be set to cause the rectifier circuit to generate one of a stable RDCV value, an increased RDCV value, and a decreased RDCV value with respect to a normal PDC value in response to the received RF power.