Patents Assigned to Seoul Semiconductor Co., Ltd.
  • LED illumination lamp bulb with internal reflector
    Patent number: 9739443
    Abstract: An LED illumination apparatus includes a substrate, a light source disposed on a top side of the substrate, a cover unit configured to cover the light source, and a reflector configured to extend from inside the cover unit towards the upper substrate, such that light generated by the light source illuminates an area below a bottom side of the substrate.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: August 22, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Ki Tae Kang
  • Light emitting diode package and manufacturing method thereof
    Patent number: 9741907
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: August 22, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Optical communication device using AC LED lighting and communication method using the same
    Patent number: 9735877
    Abstract: An optical communication device including a plurality of groups of light emitting diode (LED) groups that are turn on according to a control of a lighting and communication control module. The lighting and communication control module is configured to receive an AC input voltage, generate a rectified voltage from the AC input voltage, determine a voltage level of the rectified voltage, sequentially drive the plurality of LED groups according to the voltage level of the rectified voltage, and perform optical communication through the plurality of LED groups only when the voltage level of the rectified voltage is greater than or equal to a preset threshold voltage level.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: August 15, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Hye Man Jung
  • Light-emitting diode package
    Patent number: 9735322
    Abstract: The present invention relates to a light-emitting diode package comprising a high-strength molding part. The light-emitting diode package, according to the present invention, comprises: a housing; at least one light-emitting diode chip disposed in the housing; a molding part which covers the at least one light-emitting diode chip; a first phosphor excited by the at least one light-emitting diode chip so as to emit green light; and a second phosphor excited by the at least one light-emitting diode chip so as to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc/m2/day or less, and the second phosphor can emit red light having a full width at half maximum of 20 nm or less.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: August 15, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Ki Bum Nam
  • Dimmable AC driven LED illuminating apparatus
    Patent number: 9730290
    Abstract: A dimmable alternating current (AC) driven light emitting diode (LED) illuminating apparatus including a TRIAC dimmer configured to perform a dimming control using a phase control.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: August 8, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Keon Young Lee, Chung Hoon Lee
  • Quantum platelet converter
    Patent number: 9728687
    Abstract: In one aspect a light emitting device includes a light emitting diode (LED) chip, and an encapsulant covering the LED chip. The encapsulant is embedded with a downconverter. The downconverter includes a quasi-two dimensional quantum nanoplatelet structure.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: August 8, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Nathan Stott, Won Cheol Seo, Ji Hye An
  • Illumination lens for short-throw lighting
    Patent number: 9714751
    Abstract: An illumination lens includes a light incident surface that defines a cavity and has a flat top and lateral flanks, the light incident surface configured to receive light from an underlying light emitting element. The illumination lens also includes a light exiting surface having a central indentation and a surrounding toroid. The flat top has an angular range of 0 to 25° with respect to a vertical optical axis and faces the central indentation.
    Type: Grant
    Filed: March 5, 2015
    Date of Patent: July 25, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: David G Pelka, William A Parkyn
  • LED luminescence apparatus
    Patent number: 9713213
    Abstract: An LED luminescence apparatus is provided, which includes a rectifying unit rectifying an AC voltage and generating a rectified voltage; a plurality of LEDs connected in series to an output terminal of the rectifying unit; a plurality of switches having drain terminals connected to cathodes of the plurality of LEDs, respectively; and a switch control unit sensing current through a plurality of resistors connected to source terminals of the plurality of switches, respectively, comparing the sensed current with a set reference current, and outputting a voltage corresponding to a difference between the sensed current and the set reference current to a gate terminal of each of the plurality of switches.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: July 18, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hye Man Jung, Hyun Gu Kang, Snag Wook Han, Young Do Jung
  • Solution deposition method for forming metal oxide or metal hydroxide layer
    Patent number: 9702054
    Abstract: A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: July 11, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
    Patent number: 9705050
    Abstract: A light-emitting device includes a substrate including a first electrode and a second electrode, a light-emitting diode (LED) chip electrically connected to the first and the second electrodes, and a phosphor sheet disposed on an upper surface of the LED chip, a first transparent part disposed under the phosphor sheet, and a second transparent part disposed between the phosphor sheet and the LED chip. The first transparent part contacts the second transparent part.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: July 11, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Hyuck Jung Choi
  • Method of fabricating a P type nitride semiconductor layer doped with carbon
    Patent number: 9705287
    Abstract: A method of stably manufacturing a p type nitride semiconductor layer using a carbon dopant is provided. A crystal plane substrate is prepared having a main surface which has an offset angle in a range of +/?0.1% with respect to a C-plane or a crystal plane equivalent to the C-plane; and during a time period in which a III-source gas and a V-source gas are supplied to grow a III-V group nitride semiconductor layer, carbon tetrabromide (CBr4), which is a carbon source gas, is supplied so as to introduce carbon into a V-group atom layer.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: July 11, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Hideo Kawanishi
  • LED package with lead terminals having protrusions of differing widths and method for fabricating the same
    Patent number: 9698319
    Abstract: A light emitting diode (LED) package according to an exemplary embodiment of the present invention includes a base including a first lead terminal and a second lead terminal, an LED chip disposed on the base, a housing disposed on the base, the housing having a cavity in which the LED chip is disposed, and an encapsulation member having a side surface contacting the housing. The first lead terminal and the second lead terminal each have a first surface and a second surface opposite the first surface, and have an unbent form, respectively. The second surface is exposed to the outside of the LED package.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: July 4, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Chung Hoon Lee, Yoon Hee Kim, Byung Yeol Park, Bang Hyun Kim, Eun Jung Seo, Hyouk Won Kwon
  • Light emitting device having UV light emitting diode for generating human-friendly light and lighting apparatus including the same
    Patent number: 9698317
    Abstract: The light emitting device includes: an ultraviolet light emitting diode emitting light in an ultraviolet wavelength region; and blue phosphors, green phosphors, and red phosphors excited by the ultraviolet light emitting diode, wherein white light is formed by synthesis of the light emitted from the ultraviolet light emitting diode, light emitted from the blue phosphors, light emitted from the green phosphors, and light emitted from the red phosphors, the white light includes ultraviolet light, green light, blue light, and red light, an intensity of a peak wavelength of the green light is in a range of 1.8 to 2.1 times the intensity of a peak wavelength of the blue light, and an intensity of a peak wavelength of the red light is in a range of 2.8 to 3.1 times the intensity of the peak wavelength of the blue light.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: July 4, 2017
    Assignee: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Sang Shin Park, Kwang Yong Oh, Myung Jin Kim, Ki Bum Nam
  • Air cavity LED backlight unit
    Patent number: 9690041
    Abstract: A light-emitting diode (LED) backlight unit includes first and second curved bottom floor reflectors exhibiting mirror image symmetry along a center line extending in a latitudinal direction, first and second sides disposed along a longitudinal direction, the first and second bottom floor reflectors disposed therebetween, first and second back reflectors disposed on distal ends of the first and second bottom floor reflectors, respectively, away from the center line, and LEDs disposed in or adjacent to the first and second back reflectors. A curvature of the first and second bottom floor reflectors respectively reach a maximum near the center line.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: June 27, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: David G Pelka, Simon Magarill
  • LED lighting apparatus
    Patent number: 9683709
    Abstract: An LED lighting apparatus is provided. The LED lighting apparatus comprises: an LED module; a heat dissipation member; and a connection member for connecting the LED module and the heat dissipation member mechanically and heat-conductively. The heat dissipation member comprises a reflective surface for reflecting light from the LED module.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: June 20, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Chung Hoon Lee, Dae Sung Cho, Sung Ho Jin, Ji Hye Ahn
  • Light emitting device and method of fabricating the same
    Patent number: 9685582
    Abstract: A method of fabricating a light-emitting device, the method including forming a first resin comprising a phosphor inside a cavity of a package body on which a light-emitting diode chip is mounted, measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor, and correcting the color coordinates by forming a second resin on the first resin. The first resin is not fully cured before measuring and correcting the color coordinates.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: June 20, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hyuck Jung Choi, Dae Hee Kim
  • Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
    Patent number: 9685327
    Abstract: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm?2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0?x?1, 0?y?1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: June 20, 2017
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventor: Tadao Hashimoto
  • Light emitting module
    Patent number: 9680073
    Abstract: A light emitting module includes: a substrate having a recess part formed thereon; a body surrounding some of side surfaces and an upper surface of the substrate; a light emitting diode chip positioned on the recess part of the substrate; and a lens positioned on the body, wherein the substrate includes a first step part positioned along an edge of the recess part and a second step part positioned along an edge of a lower surface thereof, and the lower surface of the substrate is exposed to the outside.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: June 13, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jin Wook Lee, Hyuck Jun Kim, Il Kyung Suh
  • Light emitting module
    Patent number: 9673358
    Abstract: Disclosed is a light-emitting module capable of not only improving appearance quality but also maximizing light efficiency. The disclosed light-emitting module comprises: a circuit board; a light-emitting diode chip which is flip-bonded on the circuit board; and a housing which is positioned on the circuit board and surrounds the light-emitting diode chip, wherein the housing has a recess and reflective part having a curvature structure formed on an inner wall of the recess.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: June 6, 2017
    Assignee: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jong Min Lee, Yang Sik Cho
  • LED luminescence apparatus and method of driving the same
    Patent number: 9674912
    Abstract: A light-emitting diode (LED) driving circuit configured to drive LED units includes a rectification circuit unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to output a unidirectional ripple voltage, a pulse-width modulation (PWM) signal generation unit to generate PWM decision signals. The PWM signal generation unit is configured to sequentially drive the LEDs according to the PWM decision signals.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: June 6, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Young Do Jong, Hyun Gu Kang, Hye Man Jung, Kang Nyung Lee