Abstract: A dimmable LED lighting apparatus including a power input unit generating drive voltage through rectification of received AC power and outputting the generated drive voltage to the drive controller, an insulation type signal transceiver receiving a pulse width modulation (PWM) signal output from a PWM dimmer and outputting the PWM signal to the drive controller, while electrically insulating the PWM dimmer from the drive controller, a first LED group to an nth LED group, n being a positive integer of 2 or greater, receiving the drive voltage and sequentially operating under control of the drive controller, and a drive controller controlling sequential operation of the first LED group to the nth LED group according to a voltage level of the drive voltage, determining a dimming level based on the received PWM dimming signal, and controlling dimming of the first LED group to the nth LED group based on the determined dimming level.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: A light-emitting device includes a board, a light-emitting diode chip disposed on the board, a molding part disposed on the board and covering the light-emitting diode chip, and a lens cap disposed on the board that is coupled with the substrate thereon and covering the molding part. An air gap is disposed between the lens cap and the molding part.

Abstract: The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

Abstract: A sequential driving type alternating current (AC) LED lighting apparatus includes a rectification unit connected to an alternating current (AC) power source and outputting a first rectified voltage as a first drive voltage to a light-emitting diode (LED) light-emitting unit through full-wave rectification of an AC voltage, and an LED drive controller configured to detect an LED drive current flowing through the LED light emitting unit or a constant current switch connected to the LED light emitting unit and configured to control sequential driving based on the detected LED drive current. The LED drive controller is configured to set an LED drive current in each of operation sections, such that a difference between light output of the LED light-emitting unit in each of the operation zones does not exceed a predetermined light output deviation.

Abstract: A light emitting module includes a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements. The lens includes a concave part having a light incident surface and an upper surface through which the light incident on the lens is emitted, and at least one of the light incident surface and the upper surface includes sections disposed at least 15° from a central axis and sequentially connected in a first direction.

Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

Abstract: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

Abstract: An LED luminescence apparatus is provided, which includes a rectifying unit rectifying an AC voltage and generating a rectified voltage; a plurality of LEDs connected in series to an output terminal of the rectifying unit; a plurality of switches having drain terminals connected to cathodes of the plurality of LEDs, respectively; and a switch control unit sensing current through a plurality of resistors connected to source terminals of the plurality of switches, respectively, comparing the sensed current with a set reference current, and outputting a voltage corresponding to a difference between the sensed current and the set reference current to a gate terminal of each of the plurality of switches.

Abstract: A light-emitting diode (LED) backlight unit includes a housing, an LED array disposed on a bottom surface of the housing, an optical film stack disposed on the LED array, and a baffled micro-optical element (BMOE) disposed between the LED array and the optical film stack. The thickness of the backlight unit is 12 mm or less, a first portion of light emitted from each LED of the LED array is configured to directly contact the optical film stack and a second portion of light emitting from each LED of the LED array is configured to be reflected off of the BMOE and onto the optical film stack, and the first and second portions of light combine to create surface illuminance on the optical film stack having a uniformity greater than 70%.

Abstract: An exemplary embodiment of the present invention discloses a light-emitting module including a circuit board, a light-emitting device disposed on the circuit board, and a lens disposed on the circuit board and configured to distribute light emitted from the light emitting device. The lens includes a concave portion having an incidence surface configured to receive incident light emitted from the light-emitting device, and the light emitting device is disposed within the concave portion of the lens.

Abstract: The present invention relates to a light source module, which has excellent lighting efficiency and is slim, and a backlight unit having the same. The present invention comprises a light emitting unit electronically connected to a substrate through a bottom surface; a wavelength conversion unit formed on the light emitting unit; and a reflection unit formed on the light emitting unit, wherein the reflection unit has a light emitting surface through which light from the light emitting unit is emitted, the light emitting surface being formed by exposing at least one surface of the wavelength conversion unit.

Abstract: A light-emitting diode package includes a package body and a light-emitting diode chip disposed on the package body. The package body includes upper conductive patterns disposed on an upper insulation substrate, a lower insulation substrate disposed on lower conductive patterns, and middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate. The package body also includes upper vias electrically connecting each of the upper conductive patterns to each of the middle conductive patterns, respectively, the upper vias being disposed in the upper insulation substrate, and lower vias electrically connecting each of the middle conductive patterns to each of the lower conductive patterns, respectively, the lower vias disposed in the lower insulation substrate.

Abstract: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm?2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0?x?1, 0?y?1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.

Abstract: A light-emitting device includes first and second lead frames spaced apart from each other, the first and second lead frames each comprising a top surface, an opposing bottom surface, and sidewalls arranged between the top surface and the bottom surface thereof, at least one of the first and second lead frames comprise three inset sidewalls that at least partially define a fixing space, the fixing space undercutting at least one of the first lead frame and second lead frame, a light-emitting diode chip arranged on the first surface of the first or second lead frame, a resin part disposed in the fixing space to support the first and second lead frames, and the first and second lead frames exposed to the outside through bottom surface.

Abstract: Herein, there is disclosed an LED illuminator installed to illuminate an inner space of a hood of a vehicle when the hood is open. The LED illuminator comprises a protection frame positioned in an inner space of the hood; and an LED module having a light emitting portion, wherein the light emitting portion is installed to be concealed into and exposed to the outside of the protection frame.

Abstract: A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.

Abstract: Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Abstract: The present invention relates to an LED lamp. In the LED lamp, light may be emitted in lateral and rear directions as well as in a front direction to obtain light distribution characteristics similar to those of an incandescent lamp, and heat generated when the LED emits light may be effectively dissipated.

Abstract: Disclosed is a lighting device having wide light-distribution characteristics. The lighting device includes a base; a protrusion disposed on the base; and a light emitting module disposed on the protrusion; wherein the light emitting module comprises a plurality of light emitting diodes inclined inward with respect to the a protruding direction of the protrusion. Accordingly, the lighting device can provide wide light-distribution characteristics.