Abstract: An image capturing apparatus has a plurality of solid-state image capturing devices each having light receiving sections laminated in a depth direction of a semiconductor substrate. The devices are sequentially arranged in a direction along a substrate surface. Incident light waves having wavelength bands corresponding to depths of respective light receiving sections are detected there and generate signal charges. Bands are associated with light receiving sections by the wavelength dependence of the optical absorption. Trench sections each reach from a light incident surface or an opposite substrate surface to respective light receiving sections that do not overlap each other in a plane view. Electric charge transfer sections transfer electric charges independently from the light receiving sections via side wall portions of their respective trenches to the light incident surface side or the opposite substrate surface side at the time of driving readout gate electrodes at each trench section.

Abstract: A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.

Abstract: A liquid crystal display apparatus includes a first substrate; a second substrate provided so as to face the first substrate; a vertical alignment type liquid crystal layer provided between the first substrate and the second substrate; a plurality of pixel areas each including a first electrode provided on the first substrate, a second electrode provided on the second substrate, and the liquid crystal layer provided between the first electrode and the second electrode; and a wall structure regularly arranged on a surface of the first electrode closer to the liquid crystal layer. The liquid crystal layer, when being provided with at least a prescribed voltage, forms at least one liquid crystal domain exhibiting a radially inclined orientation in an area substantially surrounded by the wall structure.

Abstract: A method of forming a layer of high-k dielectric material in an integrated circuit includes preparing a silicon substrate; forming a high-k dielectric layer by a sequence of ALD cycles including: depositing a first layer of metal ligand using ALD with an oxygen-containing first precursor; and depositing a second layer of metal ligand using ALD with a second precursor; repeating the sequence of ALD cycles N times until a near-critical thickness of metal oxide is formed; annealing the substrate and metal oxide layers every N ALD cycles in an elevated temperature anneal; repeating the sequence of ALD cycles and elevated temperature anneals until a high-k dielectric layer of desired thickness is formed; annealing the substrate and the metal oxide layers in a final annealing step; and completing the integrated circuit.

Abstract: A two-side image forming apparatus of the present invention is provided with a first sheet-transferring path, for use in one-side image formation, for transferring, to a printed sheet storage section via an image transcribing section, a sheet supplied from an unprinted sheet storage section; and a second sheet-transferring path, connected to the first sheet-transferring path, for supplying a tuned-over one-side printed sheet to the image transcribing section, the two-image forming apparatus being controlled so that a plurality of sheets are transferred concurrently in an overall sheet-transferring path when performing two-side image forming operation, the overall sheet-transferring path including the first sheet-transferring path and the second sheet-transferring path. With this arrangement, it is possible to attain a significant improvement in process efficiency.

Abstract: A display device includes an illuminating device having an optical waveguide plate for introducing light thereinto, a drive assembly having a planar array of actuators disposed in facing relation to the optical waveguide plate, a displacement transmitter assembly disposed between the optical waveguide plate and the drive assembly, and a light scattering layer disposed on the displacement transmitter assembly. The actuators are selectively displaceable to bring the light scattering layer into and out of contact with the optical waveguide plate, for controlling light that leaks from the optical waveguide plate as emitted light. The display device also includes an optical modulator for modulating the emitted light from the illuminating device to display an image. The illuminating device has a light reflecting layer disposed on at least a portion of the displacement transmitter assembly that confronts the optical waveguide plate.

Abstract: The semiconductor device of the present invention and the method of the present invention, for forming the semiconductor device, form: a penetrating hole in a semiconductor wafer which has a first insulating film and an electrode pad formed on a first face of the semiconductor wafer, the penetrating hole being immediately below the electrode pad; and a second insulating film on an inner wall of the penetrating hole and on a second face of the semiconductor wafer. In forming the second insulating film, electrodeposition using the semiconductor wafer as a cathode is used. After the second insulating film is formed, the first insulating film is etched using the second insulating film as a mask, the back face of the electrode pad is exposed, and a conductor layer, acting as a penetrating electrode, is formed in the penetrating hole.

Abstract: A display device which makes it possible to shorten a selection period per pixel while compensating variations in a threshold voltage of the driving transistor, and a method for driving the same are achieved. In a pixel circuit Aij, a potential wire Ui is set to a potential Vcc, a voltage of a gate wire Gi becomes Low, a voltage of a control wire Ri becomes High, and a voltage of a control wire Pi becomes High, so that a gate terminal of a driving TFT: Q1 has a potential of a data wire Dj. Moreover, a voltage of the gate wire Gi becomes High so as to compensate a threshold voltage of the driving TFT: Q1. Thereafter, a voltage of the control wire Pi becomes Low, and the potential wire Ui is set to a potential Vc, so that a voltage of a capacitor C1, i.e., a gate-source voltage of the driving TFT is changed. This causes a voltage of the control wire Ri to be Low, so that a driving current is flown into an organic EL: EL1.

Abstract: On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through exposure and development processes, the resist film is divided for each picture element and subjected to ultraviolet ray irradiation to harden only a surface layer thereof. Then, the resist film is subjected to heat treatment to form thereon wrinkle-form surface ruggedness of a uniform pattern, which is determined depending on the size of the resist film. Subsequently, reflection electrodes are formed on the resist film. The reflection electrodes are formed to overlap the gate bus line, data bus line and TFTs, and the regions between the adjacent reflection electrodes serve as light transmission regions.

Abstract: The present invention allows a crystalline photovoltaic module having a super straight type structure in which a light-receiving surface side-sealing EVA layer 2, a photovoltaic cell matrix 3, a back surface side-sealing EVA layer 4 and a back surface-sealing weatherproof film 5 are laminated sequentially in this order on a light-receiving glass 1 and these components are formed into an integral piece to be reused after it has been used in the market for a long time by extending the lifetime of the photovoltaic module. The regeneration method includes peeling the back surface-sealing weatherproof film 5, laminating a new back surface side-sealing EVA layer 8 and a new back surface-sealing weatherproof film 9 in a portion in which the film has been peeled, and then curing for crosslinking the new back surface side-sealing EVA layer 8 that is laminated.

Abstract: Disclosed herein is a method for performing ongoing ad hoc network topology discovery with regard to a collection of plural participating nodes. The method features the steps of (a) defining an appropriate topology-discovery condition to be associated with such nodes, (b) when that condition occurs, establishing and activating a dedicated, contention-free, discovery-communication time period wherein each node broadcasts, for reception by all other nodes, its attributes, including its identity, it operating characteristics, its capabilities, and its associated link qualities in relation to the other nodes, (c) utilizing the results of such establishing and activating steps, creating an overall network topology map associated with the nodes, and (d) then making that map available for use in subsequent network organizational activities, including the practices of creating suitable communication links between nodes, and enabling organization of a network into appropriate subnets and proxy networks.

Abstract: A method of forming carbon nanotubes includes incorporating phosphors in the form of quantum dots, along with the beads of ZnO on carbon nanotubes (CNTs) to generate white light. The ability to form a high density of quantum dots in a small volume allows for a high probability of UV absorption and subsequent re-emission to generate visible radiation. The material and size of the quantum dots can be controlled by an atomic layer deposition (ALD) process and thermal cycle.

Abstract: A first box body is inserted between a first flat part and a first frame portion of a cover and is fastened to the cover by means of a first fastening member so that the first frame portion is interposed between the first box body and a plate-shaped first fixing member forming a first fixing member window for exposing a display section. A second box body is inserted between a second flat part and a second frame portion of the cover and is fastened to the cover by means of a second fastening member so that the second frame portion is interposed between the second box body and a plate-shaped second fixing member forming a second fixing member window for exposing an operation section.

Abstract: A method generally for output handling a new imaging job, and specifically for handling such a job by delivering it to one of several currently job-engaged imaging output devices (illustrated as printers) including the steps of (a) examining the current job-processing statuses of such devices, and (b) from the result of that examining, determining the respective remainders in the amounts of current-job work still to be performed by those devices. The method thus features the acquisition and use of output device busyness information as an important part of the approach toward promoting efficient output handling of new imaging jobs.

Abstract: The present invention provides a compound of formula (I): wherein V represents NR5, O, S, SO or S(O)2; W and X each independently represent CH or N; Y represents N, CH or C—Ar2, with the proviso that at least one, but no more than two, of W, X and Y are N; Z represents CH or C—Ar2, with the proviso that when Y is N or CH then Z is C—Ar2, and with the further proviso that when Y is C—Ar2 then Z is CH; Ar1 represents a fused 9 or 10 membered heterobicyclic ring system containing one, two, three or four heteroatoms selected from nitrogen, oxygen and sulfur, wherein at least one of the rings in said ring system is aromatic; Ar2 represents an aromatic ring selected from phenyl, pyridyl, pyrimidinyl and pyridazinyl which is optionally fused and substituted; R1 represents halogen, hydroxy, oxo, C1-6alkyl, C2-6alkenyl, C2-6alkynyl, haloC1-6alkyl, hydroxyC1-6alkyl, C1-6alkoxy, haloC1-6alkoxy, hydroxyC1-6alkoxy, C3-7cycloalkyl, C3-7cycloalkoxy, C3-5cycloalkylC1-4alkyl, cyano, nitro, SR6, SOR6, SO2R6, COR6, NR3COR6, CON

Abstract: For inspecting a display module an inspection device is provided. There is a first connection having inputs for providing electric power and various signals needed to drive a display device. The display module can be mounted on the inspection device. There is a power supply for generating the electric power, a control circuit for generating the various signals, and a second connector having outputs of the power supply and the control circuit. When the display module is mounted on the inspection device, the first and second connectors are connected together, so the power supply and the control circuit can be electrically connected to the display module.

Abstract: There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MIIl-pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

Abstract: A solid-state image capturing device is provided, in which a multilayered wiring section having a plurality of wiring layers laminated via respective interlayer insulation films is provided on a semiconductor substrate or a semiconductor region formed on the substrate where a plurality of light receiving sections for photoelectrically converting a subject light are arranged in matrix in a pixel section; and the interlayer insulation films in a pixel section are evenly engraved, so that the pixel section of the substrate is thinner than a peripheral circuit section; and a plurality of light receiving sections and respective microlenses facing with each other are arranged on the bottom surface of the engraved portion of the interlayer insulation film.

Abstract: A printing system prevents mistakes such as that a printed paper sheet printed by requesting from a PC to an image forming apparatus is left in an ejected-paper tray. The image forming apparatus transmits to the server printing execution result information that includes the serial number and the time and date of the printing. The server manages the state of unfetch of the printed paper sheet using a fetch flag in a printing record list created based on the printing execution result information, changes the fetch flag from “unfetched” to “fetched” when information indicating that the printed paper sheet has been fetched is sent from the image forming apparatus.

Abstract: A print control apparatus in which a plurality of print apparatuses having a hold print function are caused to hold print data, and the print data of other print apparatuses other than a print apparatus print-instructed by a user is deleted, is provided. A print server is connected to the plurality of printers having a hold print function through a network. The print server includes a print data transmission portion that transmits print data received from a PC to printers to cause the printers to hold the print data, and a print data deletion instruction portion that, when a print notification of the print data is received from any one of the plurality of the printers, instructs other printers other than the printer to delete the print data.