Patents Assigned to Shin-Etsu Chemical Co., Ltd.
-
Publication number: 20250079447Abstract: A negative electrode active material including negative electrode active material particles, wherein the negative electrode active material particles contain silicon oxide particles coated with a carbon layer, at least a part of the silicon oxide particles contains at least one selected from the group consisting of Li2SiO3, Li4SiO4, and Li6Si2O7, and a part of at least an outermost layer of the negative electrode active material particles is coated with a layer of a plasticizer. This can provide: a negative electrode active material that can increase stability in slurry formation while achieving sufficient battery characteristics; and a negative electrode including such a negative electrode active material.Type: ApplicationFiled: December 1, 2022Publication date: March 6, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTDInventors: Takakazu HIROSE, Kohta TAKAHASHI, Yusuke OSAWA, Shuhei KANESATO, Masaki MURAYAMA, Reiko SAKAI
-
Publication number: 20250075039Abstract: A method for producing a silicone particle, the silicone particle including: a dialkylsiloxane unit of the general formula (1), R42SiO2/2??(1) wherein, R4s represent a monovalent hydrocarbon group having 1 to 6 carbon atoms; and a poly(oxyalkylene)methylsiloxane unit of the general formula (2), wherein R1s represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms, R2s represent a divalent aliphatic group having 1 to 6 carbon atoms, and “n” is a number that satisfies 1?n?50, wherein the silicone particle has an oxyalkylene group in a surface thereof, the method including polymerizing a composition containing (A) an organopolysiloxane having a radical polymerization reactive group, (B) a polyoxyalkylene-modified silicone having a radical polymerizable group, and (C) a redox radical polymerization initiator, in a state of being dispersed in water at a low temperature of 50° C. or less.Type: ApplicationFiled: March 22, 2022Publication date: March 6, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Kazuyuki TAKEWAKI
-
Publication number: 20250075038Abstract: An aerobic platinum catalyst mixture comprising a reaction mixture of a platinum-alkenyl group-containing organosiloxane complex and an organic silicon compound having at least one SiH group per molecule in an amount that makes a molar excess of hydrogen atoms bonded to silicon atoms (SiH groups) relative to the alkenyl groups in the platinum-alkenyl group-containing organosiloxane complex. The platinum catalyst mixture has the property of catalytic activity being low as a hydrosilylation addition reaction catalyst when in an oxygen-free, low-moisture content closed state in which contact with moisture (humidity) and oxygen is cut off and being activated as a hydrosilylation addition reaction catalyst by contact with moisture (humidity) and/or oxygen in the atmosphere.Type: ApplicationFiled: June 15, 2022Publication date: March 6, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hiroyasu HARA
-
Publication number: 20250073154Abstract: Provided are: an organopolysiloxane that, when used to treat a hydrophobic powder, imparts excellent dispersibility in water to the treated hydrophobic powder; a treated hydrophobic powder; a dispersion; and a cosmetic. The organopolysiloxane contains a (poly)glycerin group and a polyoxvalkylene group.Type: ApplicationFiled: December 22, 2022Publication date: March 6, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Taro IMAI
-
Publication number: 20250076756Abstract: The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.Type: ApplicationFiled: August 14, 2024Publication date: March 6, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Nobuhiro NAGAMACHI, Daisuke KORI, Kenta ISHIWATA
-
Patent number: 12242025Abstract: A synthetic quartz glass substrate with an antireflection film, including: a synthetic quartz glass substrate; and an antireflection film formed on a main surface of the synthetic quartz glass substrate, wherein a contact angle measured by a sessile drop method of JIS R 3257:1999 of the main surface of the synthetic quartz glass substrate is within 5 degrees, and the antireflection film includes a first layer containing Al2O3, a second layer containing HfO2, and a third layer containing MgF2 or SiO2 sequentially laminated on the main surface of the synthetic quartz glass substrate.Type: GrantFiled: March 10, 2021Date of Patent: March 4, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Harunobu Matsui, Daijitsu Harada, Masaki Takeuchi
-
Patent number: 12240972Abstract: A method for producing a vinyl chloride type polymer is to produce the vinyl chloride type polymer by polymerizing a vinyl chloride monomer, or a mixture of a vinyl chloride monomer with a monomer copolymerizable with the vinyl chloride monomer in an aqueous medium by using a polymerization reactor. An aqueous solution of a copolymerized polyether having a weight-average molecular weight of 1,000 to 3,500 with a mole ratio of ethylene oxide to propylene oxide in the range of 10/90 to 60/40 is charged into the polymerization reactor with an amount of 0.005 to 0.050 part by weight as the copolymerized polyether relative to 100 parts by weight of the vinyl chloride monomer.Type: GrantFiled: June 8, 2020Date of Patent: March 4, 2025Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hiroshi Fukudome, Kazuhiro Kumakura, Toshihiko Kawakubo
-
Patent number: 12240804Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.Type: GrantFiled: October 6, 2021Date of Patent: March 4, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayuki Fujiwara, Satoshi Watanabe, Kousuke Ohyama
-
Patent number: 12240868Abstract: This organic silicon compound is characterized by being represented by structural formula (1), and has good reactivity while having a monoalkoxysilyl group. (In the formula, X represents a monovalent to trivalent organic group including a polyoxyalkylene structure, an alkylene group having 1-20 carbon atoms, O, S, N, or the like, R1 and R2 each independently represent an alkyl group or the like having 1-10 carbon atoms, Y represents a single bond, O, S, or the like, A1, A2, A3, A4, and A5 each represent a single bond, or a divalent linking group such as a divalent hydrocarbon group having 1-20 carbon atoms, and n represents a number of 1-3.Type: GrantFiled: January 22, 2019Date of Patent: March 4, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Yamada, Munenao Hirokami
-
Publication number: 20250066993Abstract: This composition containing an organosilicon compound represented by formula (1) and an amino group-containing organosilicon compound can impart excellent washing durability and sustained antibacterial and antiviral performance to a synthetic fiber such as a polyester fiber. (In the formula, R1 each independently represent a C1-C10 alkyl group or a C6-C10 aryl group, R2 each independently represent a C1-C10 alkyl group or a C6-C10 aryl group, R3 represents a C12-C24 alkyl group, R4 and R5 each independently represent a C1-C10 alkyl group, X represents a halogen atom, m represents an integer of 1-20, and n represents an integer of 1-3.Type: ApplicationFiled: October 27, 2022Publication date: February 27, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Munenao HIROKAMI
-
Publication number: 20250068055Abstract: A pellicle characterized by having an amount of released aqueous gas of 1×10?3 Pa·L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×105 Pa·L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10?7 Pa·L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10?3 Pa or less.Type: ApplicationFiled: November 13, 2024Publication date: February 27, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Yu YANASE
-
Publication number: 20250068067Abstract: The onium salt is capable of generating an acid with controlled diffusion, a chemically amplified positive resist composition comprising the onium salt. The onium salt contains a fluorinated alkanesulfonic acid anion having an alkyl or fluoroalkyl group and an iodized aromatic ring generates an acid with controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is also provided.Type: ApplicationFiled: June 27, 2024Publication date: February 27, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Masahiro Fukushima, Satoshi Watanabe, Keiichi Masunaga, Masaaki Kotake, Yuta Matsuzawa
-
Publication number: 20250068069Abstract: The chemically amplified resist composition is excellent in LWR and resolution and can prevent a resist pattern from collapsing in photolithography using high-energy radiation, such as far ultraviolet lithography, EUV lithography, and electron beam (EB) lithography, an onium salt for use therein. The chemically amplified resist composition can form a pattern by using it. The onium salt has the following formula (1).Type: ApplicationFiled: August 6, 2024Publication date: February 27, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Masahiro Fukushima
-
Publication number: 20250068070Abstract: The present invention is a negative-type photosensitive resin composition, including: a polymer (A) having a structural unit represented by the following general formula (1) and/or (2) and a structural unit represented by the following general formula (3) and/or (4); a photoacid generator (B); a crosslinking agent (C); and a solvent (D). This can provide: a negative-type photosensitive resin composition that is soluble in an alkaline aqueous solution, that can form a fine pattern to yield high resolution, that has good mechanical properties such as breakage elongation and tensile strength even by curing at low temperature, and that causes no deterioration of adhesive force before and after a high-temperature high-humidity test; a patterning method; a method for forming a cured film; an interlayer insulative film; a surface-protective film; and an electronic component.Type: ApplicationFiled: July 26, 2024Publication date: February 27, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki URANO, Masashi IIO, Osamu WATANABE, Katsuya TAKEMURA, Kazuya HONDA
-
Publication number: 20250070384Abstract: Provided is a coating material for a secondary battery separator, the coating material including surface-treated spherical silica particles that have on the surfaces thereof a R1SiO3/2 unit (in the formula, R1 is a univalent hydrocarbon group having 1-20 substituted or unsubstituted carbon atoms) and a R23SiO1/2 unit (in the formula, R2 is a univalent hydrocarbon group having 1-16 substituted or unsubstituted carbon atoms that are mutually the same or different), have a median diameter of 0.01-0.5 ?m in a volume-based particle size distribution, and have a circularity of 0.8-1.0.Type: ApplicationFiled: November 29, 2022Publication date: February 27, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroto OHWADA, Kazuyuki MATSUMURA, Atsushi YAGINUMA, Yoshiteru SAKATUME, Yukio MORIMOTO
-
Patent number: 12237435Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.Type: GrantFiled: November 28, 2023Date of Patent: February 25, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki Otsuka, Shozo Shirai
-
Publication number: 20250060669Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU. The resist composition can form a pattern by using the resist composition. The resist composition comprises a base polymer of sulfonium salt structure having a trifluoromethoxybenzenesulfonamide, difluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide or difluoromethoxybenzenesulfonimide anion bonded to its backbone offers a high sensitivity, reduced LWR and improved CDU.Type: ApplicationFiled: July 25, 2024Publication date: February 20, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Masahiro Fukushima
-
Publication number: 20250060658Abstract: As a reflective mask blank that includes a protection film containing ruthenium (Ru), a reflective mask blank in which the protection film is hard to be damaged and can be suppressed decrease of the thickness is provided by a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorption film, and an etching prevention film that contains niobium (Nb) and is free of ruthenium (Ru) between the protection film and the absorption film.Type: ApplicationFiled: August 2, 2024Publication date: February 20, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Yukio INAZUKI, Takuro KOSAKA, Taiga OGOSE, Keisuke SAKURAI, Shohei MIMURA, Hideo KANEKO
-
Publication number: 20250060670Abstract: The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000: where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1, where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2, where RA represents an organic group, RB represents a hydrogen atom or an organic group, and where R4 rType: ApplicationFiled: July 29, 2024Publication date: February 20, 2025Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Kenta Ishiwata, Daisuke Kori, Toshiharu Yano
-
Publication number: 20250059312Abstract: Provided are a heat-curable maleimide resin composition suitable for use in a substrate, and whose cured product has an excellent high-temperature property due to its high glass-transition temperature, an excellent dielectric property and an excellent dimension stability; and an uncured and cured resin films comprised of such composition, and having an excellent handling property. The heat-curable maleimide resin composition contains: (A) a maleimide resin having a number average molecular weight of not lower than 3,000; (B) an organic compound having, in one molecule, at least one allyl group and at least one isocyanuric ring; and (C) a reaction initiator.Type: ApplicationFiled: October 31, 2024Publication date: February 20, 2025Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Yoshihiro TSUTSUMI, Yuki KUDO, Shinsuke YAMAGUCHI