Abstract: A semiconductor device manufacturing method includes: a pretreatment step of performing a hydrophobic treatment on a first exposed region of an exposed surface, an n-type semiconductor layer being exposed from the first exposed region, and a pn junction being exposed from the exposed surface; an impurity supplying step of supplying an n-type impurity to the first exposed region; a channel stopper forming step of irradiating the first exposed region with a laser beam to introduce the n-type impurity into the n-type semiconductor layer, thus forming a channel stopper; and a glass layer forming step of forming a glass layer using a glass composition so as to cover the exposed surface.

Abstract: A MOSFET used in a power conversion circuit including a reactor, a power source, the MOSFET, and a rectifier element, includes a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure, the n-type column region and the p-type column region are formed such that a total amount of a dopant in the p-type column region is set higher than a total amount of a dopant in the n-type column region, and the MOSFET is configured to be operated in response to turning on of the MOSFET such that at a center of the n-type column region as viewed in a plan view, a low electric field region having lower field intensity than areas of the n-type column region other than the center of the n-type column region appears.

Abstract: A semiconductor module includes a first electronic device in which one terminal is connected to a first wiring line, the other terminal is connected to a second wiring line, and a first device current flows in a first current direction from the first wiring line to the second wiring line, and a second electronic device in which one terminal is connected to a third wiring line, the other terminal is connected to a fourth wiring line, and a second device current flows in a second current direction from the third wiring line to the fourth wiring line, the first electronic device and the second electronic device being disposed such that at least part of a first magnetic flux generated by the first device current flowing in the first current direction cancels at least part of a second magnetic flux generated by the second device current.

Abstract: A semiconductor device includes: a semiconductor layer of silicon carbide including a plurality of layers disposed on a main surface side; an electrode layer that is one of the plurality of layers, wherein the electrode layer has an electrode connecting surface to which a conductive connecting member is connected, and the electrode layer is composed mainly of silver; and a first metal layer that is a layer, different from the electrode layer, among the plurality of layers, wherein the first metal layer has a first bonding surface bonded onto the electrode layer such that the electrode connecting surface is exposed to an outside, and a second bonding surface electrically connected to the semiconductor layer, and the first metal layer is composed mainly of titanium carbide.

Abstract: An electronic device has a substrate 5, a first conductor layer 71 provided on the substrate 5, a second conductor layer 72 provided on the substrate 5; an electronic element provided on the first conductor layer 71, and a sealing part 90 covering the substrate 5, the first conductor layer 71, the second conductor layer 72, and the electronic element 95. The first conductor layer 71 is not provided on a virtual straight line VL including the second conductor layer 72 in an in-plane direction of the substrate 5. The second conductor layer 72 is sealed inside the sealing part 90 and covered only with the sealing part 90.

Abstract: A control system includes a system power supply IC that operates based on a voltage outputted from a power supply circuit and supplies a voltage for operating a microcomputer to the microcomputer, monitors an abnormal condition of the microcomputer, and outputs a reset signal for resetting the microcomputer to the microcomputer when detecting an abnormal condition of the microcomputer. When detecting the abnormal condition of the microcomputer, the system power supply IC outputs a switch opening signal for forcibly turning off a switch, which, in response to the switch opening signal, stops supplying the voltage outputted from the power supply circuit to the motor driving circuit.

Abstract: A silicon carbide semiconductor device includes: n type regions formed on a surface of the n? type epitaxial layer; p type body regions formed at positions deeper than the n type regions; p? type channel regions each reaching the p type body region; and n++ type source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the p? type channel regions and the n++ type source regions are formed at a planar position where the n type region remains between the p? type channel region and the n++ type source region, and out of boundary surfaces which are formed between the p? type channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surface 116a of the p type body region as viewed in a plan view.

Abstract: A semiconductor module includes a die pad frame; a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame; a first clip frame disposed on the upper surface of the semiconductor chip; a first clip conductive connection member disposed between the first electrode on the semiconductor chip and a lower surface of the first clip frame, the first clip conductive connection member electrically connecting the first electrode of the semiconductor chip and the lower surface of the first clip frame; and a sealing resin.

Abstract: Provided are a plurality of circuit blocks each including: a first series circuit including a first rectifying element and a first switching element which are connected in series; a second series circuit including a second rectifying element and a second switching element which are connected in series; and a capacitor, wherein output terminals are connected to both ends of the first series circuit, both ends of the second series circuit, and both ends of the capacitor. Input terminals of the respective circuit blocks are connected in series. An AC power source is connected thereto via a choke, thereby solving the problem.

Abstract: An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

Abstract: A semiconductor device of an embodiment includes an overvoltage protection diode in which an N-type semiconductor layer and a P-type semiconductor layer, formed on an insulating film in a voltage supporting region, are alternately disposed adjacently to each other. The overvoltage protection diode is disposed at a corner portion on the upper face of the insulating film, and extends from the corner portion to the center portion of the semiconductor substrate.

Abstract: A switching element control circuit is configured to perform a measurement mode in which a threshold voltage of a switching element is measured and a control mode in which an ON/OFF operation of the switching element is controlled in a switching manner. The switching element control circuit includes: a threshold voltage measurement power source; a third electrode voltage control part; an ON/OFF state determination part; and a memory part which stores the third electrode voltage applied to the third electrode as a threshold voltage of the switching element. The third electrode voltage control part controls, in the control mode, the third electrode voltage based on information including the threshold voltage stored in the memory part at the time of bringing the switching element into an ON state.

Abstract: Manufacturing method for an electronic device comprises a step of placing a substrate 10, which has a metal plate 11 on a back-surface side, on a back-surface-side mold 110 having a mold recessed part 111, a step of placing a front-surface-side mold 120 on the back-surface-side mold so as to cover the substrate 10; and a step of pouring resin between the front-surface mold 100 and the back-surface-side mold 110, when the substrate 10 is pressed against the back-surface-side mold 110. Circumferential part of the metal plate 11 is in contact with an edge of the mold recessed part 111 when the substrate 10 is pressed against the back-surface-side mold 110 in the step of pouring resin.

Abstract: A semiconductor device (100) comprises a main body portion (50), a semiconductor element (51), a sealing portion (60) and a first lead (10). The first lead (10) has a first base end portion (11) provided along the first direction, a protruding portion (12) protruding from the first base end portion (11) in a second direction different and having a positioning hole (13) formed therein, and a first tip end portion (17) provided in the first base end portion (11) via a bent portion (15). A slit (14) is formed in the protruding portion (12), and a positioning hole side end portion (13a) on the first base end portion (11) side of the positioning hole (13) is positioned on or more on the side opposite to the bent portion (15) than a straight line extending along the first direction from a bent-portion-side slit side end portion (14a) of the slit (14).

Abstract: An electronic device has a sealing part 90, a first main terminal 11 protruding outward from the sealing part 90, a second main terminal 12 protruding outwardly from the sealing part, an electronic element 95 provided in the sealing part and having a front surface electrically connected to the first main terminal 11 and a back surface electrically connected to the second main terminal 12, a head part 40 connected to the front surface of the electronic element 95, a sensing terminal 13 protruding to an outside from the sealing part 90 and used for sensing and a connection part 35 integrally formed with the head part 40 and electrically connected to the sensing terminal 13. A current flowing through the sensing terminal 13 and the connection part 35 among a sensing current path does not overlap a main current path flowing through the second main terminal 12, the electronic element 95 and the first main terminal 11.

Abstract: A starting power generation apparatus according to an embodiment of the present invention includes: a starter generator including a field portion having a permanent magnet, and an armature unit including a first multi-phase winding and a second multi-phase winding which are arranged in parallel; a first power conversion unit including a first positive-side DC terminal connected to a battery and a plurality of first AC terminals connected to the first multi-phase winding, the first power conversion unit being configured to convert a power bidirectionally between DC and AC; a second power conversion unit including a plurality of second AC terminals connected to the second multi-phase winding, the second power conversion unit being configured to control a current to be input and output via the second AC terminals; and a control unit configured to detect a positional relationship between the field portion and the armature unit based on an output voltage of the second multi-phase winding, and control the first pow

Abstract: An electronic module comprises a substrate 11, 21, an other-side electronic component 18, 23 provided on the other side of the substrate 11, 21, a one-side electronic component 13, 28 provided on one side of the substrate 11, 21 and a connecting terminal 115, 125 having an other-side extending part 119a, 129a extending to circumferential outside of the substrate 11, 21 on the other side of the substrate 11, 21, a one-side extending part 119b, 129b extending to circumferential outside of the substrate 11, 21 on one side of the substrate 11, 21, and a connecting part 118, 128 connecting the other-side extending part 119a, 129a with the one-side extending part 119b, 129b at the circumferential outside of the substrate 11, 21.

Abstract: A silicon carbide semiconductor device includes: n type regions formed on a surface of the n? type epitaxial layer; p type body regions formed at positions deeper than the n type regions; p? type channel regions each reaching the p type body region; and n++ type source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the p? type channel regions and the n++ type source regions are formed at a planar position where the n type region remains between the p? type channel region and the n++ type source region, and out of boundary surfaces which are formed between the p? type channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surface 116a of the p type body region as viewed in a plan view.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90 and a connection body 50 having a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75. The head part 40 has a second projection protruding 42 toward the electronic element 95 and a first projection 41 protruding from the second projection 42 toward the electronic element 95.