Patents Assigned to SHOWA DENKO
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Patent number: 12190032Abstract: A material design device derives the optimal solution for a design condition satisfying a desired material property. A design condition setting unit for setting a specified range of a design condition of a material to be designed. A comprehensive prediction point generation unit generates a plurality of comprehensive prediction points within the specified range set by the design condition setting unit. A design condition-material property table stores data sets in which each point of the comprehensive prediction points is associated with a material property value calculated by inputting the comprehensive prediction points generated by the comprehensive prediction point generation unit, to a learned model. A required property setting unit sets a specified range of a required property of the material. A design condition extraction unit extracts, from the design condition-material property table, a data set satisfying the required property set by the required property setting unit.Type: GrantFiled: October 30, 2019Date of Patent: January 7, 2025Assignee: Showa Denko K.K.Inventors: Katsuki Okuno, Takuya Minami, Shimpei Takemoto, Eriko Takeda, Yoshishige Okuno, Masamichi Kitano
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Patent number: 12134805Abstract: An aluminum alloy member forms a fluoride film thereon, which does not form a black dot-shaped bulged portion and, therefore, has excellent smoothness and excellent corrosion resistance against a corrosive gas, plasma, and others. An aluminum alloy member for forming a fluoride film thereon, consists of: Si: 0.01 mass % to 0.3 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0.5 mass % or less; Mn: 0.30 mass % or less; Cr: 0.30 mass % or less, and the balance being Al and inevitable impurities, wherein when an average major diameter of Fe-based crystallized products in the aluminum alloy member is “D” (?m), and an average crystalline particle diameter in the aluminum alloy member is “Y” (?m), a relational expression: Log10 Y<?0.320D+4.60 . . . (1) is satisfied. A fluoride film is formed on at least a part of a surface of the aluminum alloy.Type: GrantFiled: March 11, 2020Date of Patent: November 5, 2024Assignee: SHOWA DENKO K.K.Inventor: Isao Murase
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Patent number: 12054811Abstract: Provided is an aluminum alloy member for forming a fluoride film thereon, the fluoride film being excellent in smoothness without occurrence of a black dot-shaped bulged portion and excellent in corrosion resistance against corrosive gas and plasma, etc. The aluminum alloy member for forming a fluoride film thereon 1 for use in a semiconductor producing apparatus consists of Si: 0.3 mass % to 0.8 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0 mass % or more and 0.5 mass % or less; Mn: 0 mass % or more and 0.30 mass % or less; Cr: 0 mass % or more and 0.30 mass % or less 0.5 mass % or less; and the balance being Al and inevitable impurities. When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (?m), and an average crystalline particle diameter in the aluminum alloy member is Y (?m), a relation expression of log10 Y?0.320D+4.60 is satisfied.Type: GrantFiled: April 19, 2019Date of Patent: August 6, 2024Assignee: SHOWA DENKO K.K.Inventor: Isao Murase
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Patent number: 12049538Abstract: An epoxy resin includes an epoxy compound having a mesogenic structure, a cured product of the epoxy resin having a flexural modulus of 3.0 GPa or more at 23° C., a fracture toughness of 1.0 MPa·m1/2 or more, and a glass transition temperature of 150° C. or higher.Type: GrantFiled: September 10, 2018Date of Patent: July 30, 2024Assignee: SHOWA DENKO MATERIALS CO., LTD.Inventors: Naoki Maruyama, Tomoko Higashiuchi, Kazumasa Fukuda, Hideyuki Katagi, Yuki Nakamura, Yoshitaka Takezawa
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Publication number: 20240243394Abstract: The packaging material includes a heat-resistant resin layer 2 as an outer side layer, a heat-fusible resin layer 3 as an inner side layer, and a metal foil layer 4 arranged between these layers. The heat-resistant resin layer 2 is made of a heat-resistant resin film having a hot water shrinkage rate of 1.5% to 12% and the heat-resistant resin layer 2 and the metal foil layer 4 are adhered via an outer side adhesive layer 5. The adhesive layer 5 is formed by an urethane adhesive agent containing a polyol, a polyfunctional isocyanate compound, and an aliphatic compound containing a plurality of functional groups capable of reacting with an isocyanate group in one molecule. With this, a packaging material can be provided in which excellent formability can be secured and delamination can be sufficiently suppressed without causing pinholes, etc., even when deep depth drawing is performed.Type: ApplicationFiled: February 23, 2024Publication date: July 18, 2024Applicant: SHOWA DENKO PACKAGING CO., LTD.Inventors: Wei HE, Hiroaki ITO, Takashi NAGAOKA, Makoto KARATSU
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Publication number: 20240229208Abstract: Provided are an Al—Mg—Si based aluminum alloy forging excellent in mechanical properties in room temperature and hardly causing recrystallized grains and a production method thereof. An aluminum alloy forging consists of: Cu: 0.15 mass % to 1.0 mass %, Mg: 0.6 mass % to 1.15 mass %; Si: 0.95 mass % to 1.25 mass %; Mn: 0.4 mass % to 0.6 mass %; Fe: 0.2 mass % to 0.3 mass %; Cr: 0.11 mass % to 0.25 mass %; Ti: 0.012 mass % to 0.035 mass %; B: 0.0001 mass % to 0.03 mass %; Zn: 0.25 mass % or less; Zr: 0.05 mass % or less; and the balance being aluminum and inevitable impurities. The number of intermetallic compounds of Mg2Si with a minor axis of 0.5 ?m or more present in a visual field area of 1.5815 mm2 is 100 or less when a sectional structure of the aluminum alloy forging is observed at a magnification of 1,000 times.Type: ApplicationFiled: December 28, 2023Publication date: July 11, 2024Applicant: SHOWA DENKO K.K.Inventor: Takuya ARAYAMA
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Publication number: 20240209488Abstract: An aluminum alloy forging of the present invention includes 0.15 wt % to 1.0 wt % of Cu, 0.6 wt % to 1.3 wt % of Mg, 0.60 w t% to 1.45 wt % of Si, 0.03 wt % to 1.0 wt % of Mn, 0.2 wt % to 0.4 wt % of Fe, 0.03 wt % to 0.4 wt % of Cr, 0.012 wt % to 0.035 wt % of Ti, 0.0001 wt % to 0.03 wt % of B, 0.25 wt % or less of Zn, 0.05 wt % or less of Zr, the balance being Al and inevitable impurities. When integrated intensity of a diffraction peak of an AlFeMnSi phase in an X-ray diffraction pattern obtained by an X-ray diffraction measurement of a cross-section of the forging is “Q1” (cpd·deg) and integrated intensity of a diffraction peak of a (200) plane of an Al phase is “Q2” (cps·deg), a value of Q1/Q2 is 6×10?2 or less.Type: ApplicationFiled: January 30, 2024Publication date: June 27, 2024Applicant: SHOWA DENKO K K.Inventor: Takuya ARAYAMA
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Publication number: 20240133010Abstract: Provided are an Al—Mg—Si based aluminum alloy forging excellent in mechanical properties in room temperature and hardly causing recrystallized grains and a production method thereof. An aluminum alloy forging consists of: Cu: 0.15 mass % to 1.0 mass %, Mg: 0.6 mass % to 1.15 mass %; Si: 0.95 mass % to 1.25 mass %; Mn: 0.4 mass % to 0.6 mass %; Fe: 0.2 mass % to 0.3 mass %; Cr: 0.11 mass % to 0.25 mass %; Ti: 0.012 mass % to 0.035 mass %; B: 0.0001 mass % to 0.03 mass %; Zn: 0.25 mass % or less; Zr: 0.05 mass % or less; and the balance being aluminum and inevitable impurities. The number of intermetallic compounds of Mg2Si with a minor axis of 0.5 ?m or more present in a visual field area of 1.5815 mm2 is 100 or less when a sectional structure of the aluminum alloy forging is observed at a magnification of 1,000 times.Type: ApplicationFiled: December 28, 2023Publication date: April 25, 2024Applicant: SHOWA DENKO K.K.Inventor: Takuya ARAYAMA
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Patent number: 11906569Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.Type: GrantFiled: November 5, 2021Date of Patent: February 20, 2024Assignee: SHOWA DENKO K.K.Inventors: Koichi Murata, Isaho Kamata, Hidekazu Tsuchida, Akira Miyasaka
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Publication number: 20240052223Abstract: A thermally conductive urethane resin composition comprising a castor oil-based polyol, a polyisocyanate compound, and a filler, wherein an equivalent ratio [NCO/OH] of isocyanato groups of the polyisocyanate compound to hydroxyl groups of the castor oil-based polyol is from 0.8 to 1.6, the filler comprises a filler (A) having an average particle diameter of 0.03 to 10 ?m, and the filler (A) has been surface-treated with a specific surface treatment agent.Type: ApplicationFiled: January 28, 2022Publication date: February 15, 2024Applicant: SHOWA DENKO K.K.Inventors: Hajime FUNAHASHI, Naoki MINORIKAWA, Hikaru SATOH, Ikue KOBAYASHI, Hajime YUKUTAKE, Takeshi IEMURA
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Publication number: 20240052336Abstract: The present disclosure relates to systems, devices and methods for the enhanced efficiency of capturing agents of interest from a sample.Type: ApplicationFiled: September 30, 2020Publication date: February 15, 2024Applicants: SHOWA DENKO MATERIALS (AMERICA), INC., SHOWA DENKO MATERIALS CO., LTD.Inventor: Taku Murakami
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Publication number: 20240038546Abstract: There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.Type: ApplicationFiled: June 24, 2021Publication date: February 1, 2024Applicant: SHOWA DENKO K.K.Inventors: Kazuma MATSUI, Yuki OKA
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Patent number: 11867471Abstract: A heat exchanger includes a bag-like outer packaging material. A heat medium flows into an inside of the outer packaging material via the heat medium inlet, passes through the inside, and flows out of the outer packaging material via the heat medium outlet. An inner core material is arranged in the inside of the outer packaging material. The outer packaging material has an outer packaging laminate material including a metal heat transfer layer and a resin thermal fusion layer on a surface side of the heat transfer layer. The outer packaging laminate materials form a bag shape by integrally joining the thermal fusion layers along the peripheral edge portions. The inner core material includes the inner core laminate material with a metal heat transfer layer and resin thermal fusion layers on surface sides of the heat transfer layer.Type: GrantFiled: January 31, 2023Date of Patent: January 9, 2024Assignee: SHOWA DENKO PACKAGING CO., LTD.Inventor: Koji Minamitani
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Publication number: 20240002743Abstract: What is provided is a fluorine-containing ether compound represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5 (R3 is a perfluoropolyether chain; R2 is represented by Formula (2), R4 is represented by Formula (3), R1 and R5 are hydrogen atoms or Formula (4); a and b in Formula (2) are an integer of 0 to 2, c in Formula (2) is an integer of 2 to 5, d and e in Formula (3) are an integer of 0 to 2, f in Formula (3) is an integer of 2 to 5; at least one of b in Formula (2) and e in Formula (3) is 1 or more; and k in Formula (4) is an integer of 3 to 6.Type: ApplicationFiled: June 7, 2021Publication date: January 4, 2024Applicant: SHOWA DENKO K.K.Inventors: Tsuyoshi KATO, Ayano ASANO, Natsumi SHIBATA, Daisuke YAGYU, Takuma KURODA, Naoya FUKUMOTO
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Publication number: 20230382084Abstract: A molding packaging material is capable of ensuring good slipperiness to secure good formability when molding the molding packaging material and is less likely to cause white powder on a surface of the packaging material. The molding packaging material includes a substrate layer as an outer layer, a heat fusible resin layer as an inner layer, and a metal foil layer arranged between the two layers. The heat fusible resin layer is composed of a single layer or a multi-layer. The innermost layer of the heat fusible resin layer is made of a resin composition containing a heat fusible resin, an anti-blocking agent, a slip agent, and a fluoropolymer-based lubricant.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Applicant: SHOWA DENKO PACKAGING CO., LTD.Inventors: Kenji YOSHINO, Makoto KARATSU, Takashi NAGAOKA
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Publication number: 20230357469Abstract: An electrode binder for a nonaqueous secondary battery; and a nonaqueous secondary battery electrode. The electrode binder for a nonaqueous secondary battery contains a resin component and is water-soluble. The surface free energy ?B at 23° C. is 70 mJ/m2 or less, and the dipole component ?pB of the surface free energy is 26 mJ/m2 or less.Type: ApplicationFiled: October 22, 2020Publication date: November 9, 2023Applicant: SHOWA DENKOInventors: Yuta KAWAHARA, Tomeonori KURATA, Mitsuru HANASAKI
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Publication number: 20230339815Abstract: A precursor of an alumina sintered compact including aluminum, yttrium, and at least one metal selected from iron, zinc, cobalt, manganese, copper, niobium, antimony, tungsten, silver, and gallium. The aluminum content is 98.0% by mass or more as an oxide (Al2O3) in 100% by mass of the precursor of an alumina sintered compact; the yttrium content is 0.01 to 1.35 parts by mass as an oxide (Y2O3) based on 100 parts by mass of the content of the aluminum as an oxide; the total content of the metals selected from the foregoing group is 0.02 to 1.55 parts by mass as an oxide based on 100 parts by mass of the content of aluminum as an oxide; and the aluminum is contained as ?-alumina. Also disclosed is an alumina sintered compact, and a method for producing an alumina sintered compact and for producing abrasive grains.Type: ApplicationFiled: April 5, 2023Publication date: October 26, 2023Applicant: Showa Denko K.K.Inventors: So Miyaishi, Satoshi Iinou
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Publication number: 20230330946Abstract: The present invention relates to a method for bonding a metal and a resin, including bonding a metal and a resin by high-frequency induction welding via an intermediate resin layer which causes a chemical reaction.Type: ApplicationFiled: August 4, 2021Publication date: October 19, 2023Applicant: SHOWA DENKO K.K.Inventors: Kazuo OTANI, Nobuyuki TAKAHASHI, Ryota NIIBAYASHI
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Publication number: 20230335737Abstract: The invention is related to a nonaqueous secondary battery electrode having an electrode active material layer with little crack and high peel strength to a current collector, and can reduce the internal resistance of the battery; and an electrode slurry therefor, and a nonaqueous secondary battery. The electrode active material layer of the nonaqueous secondary battery contains an electrode active material (A), a copolymer (P), a nonionic surfactant (B), and a cellulose derivative (C). A content of the nonionic surfactant (B) to 100 parts by mass of the copolymer (P) is 5.0 to 350 parts by mass, and a content of the cellulose derivative (C) is 10 to 350 parts by mass. The copolymer (P) contains a structural unit (p1) derived from a (meth)acrylic acid salt of 50 to 99% by mass and a structural unit (p2) derived from a compound represented by general formula (1) of 0.50 to 30% by mass.Type: ApplicationFiled: October 22, 2020Publication date: October 19, 2023Applicant: SHOWA DENKO K.K.Inventors: Yuta KAWAHARA, Tomonori KURATA, Mitsuru HANASAKI
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Publication number: 20230322650Abstract: There is provided a halon purification method capable of simply, safely, and efficiently removing mixed bromine molecules to obtain high purity halon. The halon purification method is a method for removing bromine molecules from crude halon containing halon and the bromine molecules, and the method includes: a contact step of bringing the crude halon into contact with an absorbing liquid containing an aqueous solution containing metal iodide to obtain a mixed liquid containing the crude halon and the absorbing liquid; and a separation step of separating the halon from the mixed liquid to obtain the halon and the absorbing liquid having absorbed the bromine molecules.Type: ApplicationFiled: July 16, 2021Publication date: October 12, 2023Applicant: SHOWA DENKO K.K.Inventor: Kanako KOGASHI