Patents Assigned to Showa Denko K.K.
  • Patent number: 11326274
    Abstract: Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room tempe
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: May 10, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Publication number: 20220139591
    Abstract: Provided is a transparent conductive film having a preferable optical property and an electric property, and in addition, a superior durability of folding. A transparent conductive film comprising: a transparent substrate, a transparent conductive layer having a binder resin and conductive fibers and formed on at least one of the main faces of the transparent substrate, and a protective layer formed on the transparent conductive layer, wherein the protective layer is a cured layer of a curable resin composite and has a thickness of more than 100 nm and 1 ?m or less.
    Type: Application
    Filed: February 17, 2020
    Publication date: May 5, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Shigeru YAMAKI, Shuhei YONEDA, Masahiko TOBA
  • Publication number: 20220135422
    Abstract: The present invention provides a method of producing titanium oxide capable of maintaining a high content of an anatase form crystal phase at a low cost even under a high temperature environment. The method of producing titanium oxide includes a step of synthesizing titanium oxide by using an aqueous solution obtained by dissolving titanium tetrachloride and an ?-hydroxycarboxylic acid having 3 carboxy groups as a reaction liquid and bringing the reaction liquid to a reaction temperature of 60° C. or higher and the boiling point of the reaction liquid or lower, wherein the ratio of the amount (mol) of the ?-hydroxycarboxylic acid to the amount (mol) of Ti in the reaction liquid is 0.006 or more and 0.017 or less, and the concentration of Ti in the reaction liquid is 0.07 mol/L or more and 0.70 mol/L or less.
    Type: Application
    Filed: February 13, 2020
    Publication date: May 5, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Hideaki CHIKAMI, Kei MIZUE, Hisao KOGOI
  • Publication number: 20220135805
    Abstract: A method for producing silicon-containing oxide-coated aluminum nitride particles including aluminum nitride particles and a silicon-containing oxide coating covering a surface of each of the aluminum nitride particles. The method includes a first step including mixing aluminum nitride particles and an organic silicone compound solution in which an organic silicone compound containing a specific structure is dissolved in a solvent to form a mixture and then heating the mixture to remove the solvent and to obtain aluminum nitride particles coated with the organic silicone compound; and a second step including heating the aluminum nitride particles coated with the organic silicone compound at a temperature of 300° C. or more and 1,000° C. or less.
    Type: Application
    Filed: November 11, 2020
    Publication date: May 5, 2022
    Applicant: SHOWA DENKO K. K.
    Inventors: Yuki OTSUKA, Naoki MINORIKAWA, Ikue KOBAYASHI
  • Patent number: 11322176
    Abstract: A method of manufacturing a magnetic recording medium forms an unfinished product including a magnetic recording layer and a protection layer that are successively formed on a substrate, and forms a lubricant layer on the protection layer of the unfinished product. The lubricant layer is formed by coating a first organic fluorine compound on the protection layer of the unfinished product, and supplying a gas, including a second organic fluorine compound, onto the protection layer of the unfinished product, and decomposing the second organic fluorine compound by Townsend discharge and ultraviolet ray irradiation. The protection layer includes carbon, and the first organic fluorine compound includes a functional group at a terminal thereof.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 3, 2022
    Assignees: SHOWA DENKO K.K., The School Corporation Kansai University
    Inventors: Hiroshi Tani, Hiroshi Sakai, Eishin Yamakawa, Kazuki Shindo
  • Patent number: 11319278
    Abstract: Provided is a method for producing glycine, in which on synthesizing glycine from glycinonitrile, glycine can be obtained in a higher yield than that in the conventional method. The present invention relates to a method for producing glycine, including allowing glycinonitrile and water to react with each other in the presence of a cerium compound, optionally adding ammonia thereto, to obtain glycine.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: May 3, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Takanori Aoki, Akira Shibuya, Takamitsu Kobayashi, Hideo Miyata, Shinya Tsukamoto, Manabu Kuwajima, Motoki Murai
  • Patent number: 11322180
    Abstract: A storage apparatus includes a disk-shaped recording medium having a surface, a motor configured to drive and rotate the recording medium, a head configured to read information from and write information to the recording medium, a ramp mechanism configured to move the head from a position above the surface of the recording medium to a head receded position, and a ramp retracting mechanism configured to move the ramp mechanism from a position above the surface of the recording medium to a ramp retracted position. Each of the head receded position and the ramp retracted position is outside a range of the recording medium in a plan view viewed from above the recording medium in a direction perpendicular to the surface of the recording medium.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: May 3, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoshihito Sueoka, Masato Fukushima
  • Patent number: 11320388
    Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: May 3, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Ling Guo, Koji Kamei
  • Publication number: 20220128634
    Abstract: In a magnetic sensor using a magnetic impedance effect, sensitivity is improved as compared to the case where a width of a sensitive element in the short direction is equal from one end to the other end in the longitudinal direction. The magnetic sensor includes: a non-magnetic substrate; and a sensitive element that is provided on the substrate, composed of a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, having a width at a center portion in the longitudinal direction that is smaller compared to a width at each of both end portions in the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.
    Type: Application
    Filed: October 12, 2021
    Publication date: April 28, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Sho TONEGAWA, Akira Sakawaki, Yasumasa Watanabe, Daizo Endo, Tomoyuki Noguchi, Yuta Miyamoto
  • Publication number: 20220127498
    Abstract: Provided are an outer package material that is for electricity storage devices such as batteries and has such a sufficient anti-electrolytic solution property that the time-dependent reduction of the adhesive strength between a metal foil layer and a sealant layer by an electrolytic solution is suppressed over a long time and a composition for adhesives for giving the outer package material. In an outer package material that is for electricity storage devices and has a structure in which at least a base material layer, a first adhesive layer, a metal foil layer, a second adhesive layer, and a sealant layer are stacked in sequence, a composition containing an isocyanato group and a (meth) acryloyl group and further containing an acid-modified polyolefin (component 1), an active energy ray polymerization initiator (component 3), and a solvent (component 4) is used as a composition for adhesives to form the second adhesive layer.
    Type: Application
    Filed: March 16, 2020
    Publication date: April 28, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Kazuhiko OOGA, Takeshi KAWAMOTO, Kai SUZUKI, Ryunosuke YAMAMOTO
  • Patent number: 11312625
    Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: April 26, 2022
    Assignee: SHOWA DENKO K.K
    Inventors: Yosuke Tanimoto, Yasuyuki Hoshino
  • Patent number: 11315839
    Abstract: An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: April 26, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoshitaka Nishihara, Koji Kamei
  • Publication number: 20220119619
    Abstract: An inorganic particle dispersion resin composition, containing: a resin; and inorganic particles, in which the inorganic particles include silica-covered aluminum nitride particles and alumina particles, and the silica-covered aluminum nitride particles include aluminum nitride particles and a silica film covering surfaces of the aluminum nitride particles. A total content of the inorganic particles is preferably in a range of greater than or equal to 60.0 volume % and less than or equal to 85.0 volume %.
    Type: Application
    Filed: July 30, 2020
    Publication date: April 21, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Hajime YUKUTAKE, Yuki OTSUKA, Naoki MINORIKAWA, Hidetoshi OKAMOTO, Toshihiro ARAI
  • Publication number: 20220119585
    Abstract: The composition comprises a compound (A) represented by general formula (1) and a compound (B) represented by general formula (2), and comprises 0.00002 to 2.0 parts by mass of the compound (B) with respect to 100 parts by mass of the compound (A), (R1—COO)n—R2—(NCO)m ??(1) g(R1—COO)n—R2—NHC(?O)NH—R2—(OCO—R1)m ??(2) wherein in general formulae (1) and (2), R1 is an ethylenically unsaturated group having 2 to 7 carbon atoms; R2 is a (m+n)-valent hydrocarbon group having 1 to 7 carbon atoms and optionally contain an ether group; R1 and R2 in the general formula (1) are the same as R1 and R2 in the general formula (2); and n and m each represent an integer of one or two.
    Type: Application
    Filed: August 16, 2019
    Publication date: April 21, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Norihito NISHIMURA, Katsutoshi OHNO
  • Publication number: 20220119739
    Abstract: Provided is a decomposing/cleaning composition for an adhesive polymer having a high etching rate and suppressed infiltration into a contact interface between a substrate such as a device wafer and an adhesive layer such as a fixing tape. The decomposing/cleaning composition of one embodiment is a decomposing/cleaning composition for an adhesive polymer containing a quaternary alkylammonium fluoride or a quaternary alkylammonium fluoride hydrate and an aprotic solvent, wherein the aprotic solvent contains (A) an N-substituted amide compound having no active hydrogens on the nitrogen atoms and (B) at least one organic sulfur oxide selected from the group consisting of sulfoxide compounds and sulfone compounds.
    Type: Application
    Filed: October 31, 2019
    Publication date: April 21, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Susumu NAKAZAKI, Kuniaki MIYAHARA, Tomoyuki FUKUYO
  • Patent number: 11305993
    Abstract: An hBN powder containing an aggregate of primary particles of hBN, the hBN powder having a ratio of an average longer diameter (L1) to an average thickness (d1) of the primary particles, [L1/d1], of 10 to 25, a tap density of 0.80 g/cm3 or more, and a BET specific surface area of less than 5.0 m2/g, in which a particle size distribution curve showing a frequency distribution based on volume of the hBN powder is a bimodal distribution curve having a first peak and a second peak in a range of a particle size of 500 ?m or less and having a peak height ratio of a second peak height (HB) to a first peak height (HA), [(HB)/(HA)], of 0.90 or less, a method for producing the same, and a resin composition and a resin sheet each comprising the hBN powder.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: April 19, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Yuki Otsuka, Masaru Fukasawa
  • Patent number: 11306412
    Abstract: A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucible 1 is able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portion 1A and a crucible upper portion 1B, the crucible lower portion including a bottom portion 1Aa and a side portion 1Ab, and the crucible upper portion including a top portion 1Ba provided with a seed crystal installation portion 1Bc for installing a seed crystal SD and a side portion 1Bb.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: April 19, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Publication number: 20220112155
    Abstract: The present invention relates to a composition for producing an N-vinylcarboxylic acid amide, the composition including (A) an N-(1-alkoxyethyl)carboxylic acid amide and (B) a carboxylic acid amide other than the N-(1-alkoxyethyl)carboxylic acid amide and the N-vinylcarboxylic acid amide, and satisfying the following conditions (1) to (4): (1) the composition has a melting point of 0 to 30° C.; (2) a water content is 0 to 1.00% by mass in a total amount of the composition; (3) a content ratio of the component (A) to the component (B) is 4.0 to 20.0 in terms of a molar ratio; and (4) a 5% by mass aqueous solution of the composition has a pH of 4.0 to 8.0. The present invention also relates to a method for producing an N-vinylcarboxylic acid amide, the method including thermally decomposing or catalytically decomposing the composition for producing an N-vinylcarboxylic acid amide.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 14, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Takamitsu KOBAYASHI, Naoyuki TANAKA
  • Publication number: 20220112373
    Abstract: Provided is a thermosetting resin composition which exhibits low water absorption and excellent reflow resistance properties without compromising heat resistance or moldability. This thermosetting resin composition contains a polyalkenylphenol compound (A), a polymaleimide compound (B), a liquid polybutadiene compound (C) and a radical initiator (D). The liquid polybutadiene compound (C) has structural units represented by formula (1)-1 and, optionally, structural units represented by formula (l)-2 and, optionally, structural units other than the structural units represented by formula (1)-1 and formula (1)-2. If the average number of structural units represented by formula (1)-1 per molecule is denoted by m, the average number of structural units represented by formula (1)-2 per molecule is denoted by n and the average number of structural units other than the structural units represented by formula (1)-1 and formula (1)-2 is denoted by w, the value of m/(m+n+w) is 0.15-1.
    Type: Application
    Filed: September 18, 2019
    Publication date: April 14, 2022
    Applicant: SHOWA DENKO K.K.
    Inventor: Chika MINEZAKI
  • Patent number: 11299454
    Abstract: A method for producing an N-vinylcarboxylic acid amide is provided, the method focusing on unsaturated aldehydes that are contained as impurities generated during a reaction. The method for producing an N-vinylcarboxylic acid amide includes a step for controlling the contained amount of unsaturated aldehydes in the N-vinylcarboxylic acid amide to be not more than 20 mass ppm.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: April 12, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Naoyuki Tanaka