Abstract: A method of manufacturing a silica-coated boron nitride particle including a first step of covering the surface of the boron nitride particle with an organic silicone compound having a specific structure and a second step of heating the boron nitride particle covered with the organic silicone compound at a temperature of 500° C. or more and 1000° C. or less, wherein the content of carbon atoms in the silica-coated boron nitride particle is 1000 ppm by mass or less. Also disclosed is a method of manufacturing a heat dissipating resin composition containing the silica-coated boron nitride particle; and silica-coated boron nitride particles.

Abstract: An aluminum alloy forging of the present invention includes 0.15 wt % to 1.0 wt % of Cu, 0.6 wt % to 1.3 wt % of Mg, 0.60 wt % to 1.45 wt % of Si, 0.03 wt % to 1.0 wt % of Mn, 0.2 wt % to 0.4 wt % of Fe, 0.03 wt % to 0.4 wt % of Cr, 0.012 wt % to 0.035 wt % of Ti, 0.0001 wt % to 0.03 wt % of B, 0.25 wt % or less of Zn, 0.05 wt % or less of Zr, the balance being Al and inevitable impurities. When integrated intensity of a diffraction peak of an AlFeMnSi phase in an X-ray diffraction pattern obtained by an X-ray diffraction measurement of a cross-section of the forging is “Q1” (cps·deg) and integrated intensity of a diffraction peak of a (200) plane of an Al phase is “Q2” (cps·deg), a value of Q1/Q2 is 6×10?2 or less.

Abstract: A method for producing a lubricating oil composition of the present embodiment includes an irradiation step of irradiating a fullerene solution in which fullerenes are dissolved in a base oil with radiation, in which the above-described radiation is ultraviolet light or ionizing radiation.

Abstract: A method of producing an N,N-disubstituted amide of the present invention is a method of reacting a nitrile with an alcohol in the presence of a catalyst, wherein the nitrile is a compound represented by R1CN (R1 represents an alkyl group having 10 or less carbon atoms or an aryl group having 10 or less carbon atoms), wherein the alcohol is a compound represented by R2OH (R2 represents an alkyl group having 10 or less carbon atoms), wherein the catalyst is a metal salt represented by MXn (M represents a metal cation having an oxidation number of n, X represents a monovalent anion including a substituted sulfonyl group represented by —S(?O)2—R3 (R3 represents a hydrocarbon group having 10 or less carbon atoms or a group in which some or all of hydrogen atoms in the hydrocarbon group are substituted with fluorine atoms), and n represents an integer of 1 to 4), a substituent bonded to a carbon atom in a carbonyl group of the N,N-disubstituted amide is R1, and two substituents bonded to nitrogen atoms in an amide

Abstract: An object of the present invention is to provide a packing material suitable for use as a packing material for size exclusion chromatography for fractionation that requires large-scale treatment, the packing material being capable of being produced by a simple process and reducing column pressure drop even when the particle diameter is small, and is to provide a method for producing the packing material. In the present invention, a packing material for size exclusion chromatography is obtained by a production process including polymerizing glycerol 1,3-dimethacrylate and glycidyl methacrylate in the presence of a polymerization initiator, hydrophilizing the resulting porous particles made of a copolymer using a sugar alcohol, and then opening the rings of remaining glycidyl groups using a mineral acid.

Abstract: A catalyst for olefin polymerization that contains a metal complex represented by general formula (C1) and a method for producing polyethylene, a copolymer of ethylene and an olefin having a polar group represented by general formula (1), or a copolymer of ethylene, an olefin having a polar group represented by general formula (1) and another monomer, using the aforementioned metal complex as a polymerization catalyst, wherein the symbols in formula (C1) and formula (1) are as defined in the specification.

Abstract: This fluorine-containing ether compound is a fluorine-containing ether compound represented by formula (1). R1—X—R2—CH2—R3—CH2—R4??(1) (In formula (1), R1 is an alkenyloxy group of 2 to 8 carbon atoms or an alkynyloxy group of 3 to 8 carbon atoms. R2 is represented by formula (2) shown below. In formula (2), a represents an integer of 1 to 3. X is represented by formula (3) shown below. In formula (3), b represents an integer of 1 to 5, Y is a divalent linking group that is bonded to a carbon atom in formula (2), and R represents an alkyl group of 1 to 6 carbon atoms or H. R3 represents a perfluoropolyether chain. R4 represents a terminal group containing two or three polar groups, wherein each polar group is bonded to a different carbon atom, and the carbon atoms to which the polar groups are bonded are bonded to each other via a linking group containing a carbon atom to which a polar group is not bonded.

Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

Abstract: A method of manufacturing a magnetic sensor includes: a soft magnetic material layer deposition process depositing a soft magnetic material layer (101) constituting a sensitive part (21) sensing a magnetic field on a substrate (10) by magnetron sputtering; and a sensitive part formation process forming the sensitive part (21) sensing the magnetic field in a portion of the soft magnetic material layer (101) where uniaxial magnetic anisotropy is provided by a magnetic field used for magnetron sputtering of the soft magnetic material layer (101).

Abstract: A sulfur-modified chloroprene polymer latex includes an emulsifier and a sulfur-modified chloroprene polymer obtained by modifying a chloroprene polymer (A) with sulfur (B), wherein the sulfur amount Y in the sulfur-modified chloroprene polymer and the z-average particle size X of the sulfur-modified chloroprene polymer satisfy formulae (1) to (3) (formula (1): 0.10<Y<0.60; formula (2): 120<X<320; and formula (3): Y<0.0025X?0.20), the total amount of a chloroprene monomer (A-1) and a monomer (A-2) copolymerizable with the chloroprene monomer which constitute the chloroprene polymer is 100 parts by mass, the amount of sulfur (B) contained in the sulfur-modified chloroprene polymer is Y parts by mass, and the z-average particle size of the sulfur-modified chloroprene polymer is X nm. The sulfur-modified chloroprene polymer latex composition can also include a metal oxide (C), a cross-linking accelerator (D), and an antioxidant (E).

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a hydrogen-containing compound gas.

Abstract: Provided is a method for producing fluorine gas, capable of suppressing clogging of pipes and valves with mist. Fluorine gas is produced by a method including electrolyzing an electrolyte in an electrolytic cell, measuring the water concentration in a fluid generated in a cathode chamber in the electrolyzing, and sending a fluid generated in the inside of the electrolytic cell in the electrolyzing the electrolyte, from the inside to the outside of the electrolytic cell through a flow path. In the sending, the flow path in which the fluid flows is switched in accordance with the water concentration measured in the measuring the water concentration.

Abstract: Proposed is a method for producing an aqueous solution, which has a thickening property, of an N-vinyl carboxylic acid amide copolymer. This method for producing an aqueous solution of an N-vinyl carboxylic acid amide copolymer is characterized in that a liquid containing at least a non-hydrophilic monomer (B), which is at least one selected from acrylonitrile and methyl acrylate, and a liquid containing at least a polymerization initiator (D) are added dropwise to an aqueous solution of an N-vinyl carboxylic acid amide monomer (A), and polymerization is performed.

Abstract: A primer-attached thermoplastic resin material having a thermoplastic resin material and one or plural primer layers laminated on the thermoplastic resin material, wherein at least one layer of the primer layers is a layer derived from a film.

Abstract: A fluorine-containing ether compound represented by formula (1) shown below. R4—CH2—R3—CH2—R2—CH2—R1—CH2—R2—CH2—R3—CH2—R4??(1) (In formula (1), R1 and R3 represent different perfluoropolyether chains, R2 represents a linking group containing one or more polar groups, and R4 represents a terminal group containing two or more polar groups.

Abstract: [Purpose] To provide is a method capable of producing a heat-dissipating unit easily and at low cost. [Solution] The method of producing a heat-dissipating unit 12 includes: inserting pins 17 punched out of a second plate member 22 for pins into a plurality of through-holes 16 formed in a first plate member 20 for a substrate. In the first plate member 20, a plurality of substrate forming portions 25 is provided side by side in the longitudinal direction of the first plate member 20. In the second plate member 22, a plurality of pin punch-out portions 26 is provided side by side in the longitudinal direction of the second plate member 22.

Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.

Abstract: A metal-resin bonded article includes a composite laminate including a metal base material having laminated thereon one layer or plural layers of a resin coating layer, and a resin material bonded and integrated thereto, the resin coating layer being laminated on a surface-treated surface of the metal base material, at least one layer of the resin coating layer containing a resin composition containing a linear chain polymer having a linear polymer structure polymerized on the metal base material, a bonding strength between the composite laminate and the resin material and an adhesion force between the metal base material and the resin coating layer satisfying particular conditions.

Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.