Abstract: A primer-attached thermoplastic resin material having a thermoplastic resin material and one or plural primer layers laminated on the thermoplastic resin material, wherein at least one layer of the primer layers is an in-situ polymerizable composition layer of an in-situ polymerizable composition polymerized on the thermoplastic resin material.

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a fluorine-containing compound gas.

Abstract: A lubricating oil composition is provided, including a fullerene and a base oil, in which the fullerene is a fullerene sublimate, and the base oil is a multiply alkylated cyclopentane oil or an ionic liquid.

Abstract: A method for producing an inositol derivative includes a step of reacting inositol and dextrin in the presence of cyclodextrin glucanotransferase to generate an inositol derivative in which a sugar is bonded to the inositol, and to obtain a solution containing the inositol derivative and the cyclodextrin glucanotransferase; and a step of removing the cyclodextrin glucanotransferase in the solution using an ultrafiltration membrane, in which a deactivation treatment of the cyclodextrin glucanotransferase in the solution is not performed.

Abstract: There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object (12) containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object (12) without using plasma under a pressure of 1 Pa to 80 kPa.

Abstract: A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid; and a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal, wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal.

Abstract: Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etching target in the absence of plasma to selectively etch the etching target with respect to the non-etching target. The etching target contains a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom. The non-etching target includes at least one selected from tantalum, cobalt, copper, titanium nitride, nickel, and amorphous carbon. The etching step is performed under temperature conditions of from 40° C. to less than 350° C.

Abstract: A method for producing a highly polymerizable N-vinyl carboxylic acid amide monomer includes (A) melting a crude N-vinyl carboxylic acid amide monomer comprising 50 to 88 mass % of an N-vinyl carboxylic acid amide monomer by heating, followed by cooling for precipitation, and subjecting precipitated N-vinyl carboxylic acid amide monomer crystals to solid-liquid separation (step (A)), and (B) further dissolving the N-vinyl carboxylic acid amide monomer crystals separated in the step (A) in a mixed solvent of ethyl acetate and an aliphatic hydrocarbon having 6 to 7 carbon atoms, then performing crystallization, performing solid-liquid separation, and recovering an N-vinyl carboxylic acid amide monomer purified product (step (B)), wherein a mass ratio of ethyl acetate/N-vinyl carboxylic acid amide monomer crystal in step (B) is 0.01 to 0.5, and a mass ratio of aliphatic hydrocarbon having 6 to 7 carbon atoms/N-vinyl carboxylic acid amide monomer crystal in step (B) is 0.5 to 3.0.

Abstract: An agent for protection against atmospheric pollutants containing a tocopherol phosphate ester or a salt thereof as an active ingredient is provided. A composition for protection against atmospheric pollutants containing the above-mentioned agent for protection against atmospheric pollutants and a pharmaceutically acceptable carrier is further provided.

Abstract: The present invention relates to an electrically conductive polymer composition having high dispersion stability in long-term storage without being influenced by air temperature changes in the winter season, the summer period, etc. and a method for stably storing an electrically conductive polymer solution. An electrically conductive polymer composition comprising at least a N-vinyl carboxylic acid amide polymer having a weight-average molecular weight within the range of not less than 5000 and not more than one million, an electrically conductive polymer, and a solvent. A method for stably storing an electrically conductive polymer solution, the method comprising adding, to an electrically conductive polymer solution, a N-vinyl carboxylic acid amide polymer having a weight-average molecular weight within the range of not less than 5000 and not more than one million.

Abstract: A method for producing fluorine gas including electrolyzing an electrolyte in an electrolytic cell, measuring the average particle size of a mist contained in a fluid generated in the inside of the electrolytic cell in the electrolyzing the electrolyte, and sending the fluid from the inside to the outside of the electrolytic cell through a flow path. The flow path in which the fluid flows is switched in accordance with the average particle size of the mist measured in the measuring the average particle size, such that the fluid is sent to a first flow path when the average particle size of the mist measured in the measuring the average particle size is not more than a predetermined reference value, or the fluid is sent to a second flow path when the average particle size is more than the predetermined reference value.

Abstract: A method for measuring the concentration of fluorine gas, which includes irradiating a halogen fluoride-containing gas with ultraviolet light in which the ratio (WX/WF) of the maximum value (WX) of ultraviolet light intensity in the wavelength region of less than 250 nm with respect to the ultraviolet light intensity (WF) at a wavelength of 285 nm is 1/10 or less, and measuring the absorbance at a wavelength of 285 nm to obtain the concentration of fluorine gas contained in the halogen fluoride-containing gas.

Abstract: A storage apparatus includes a disk-shaped recording medium, a motor configured to drive and rotate the recording medium, a head configured to read information from and write information to the recording medium, and a support member configured to support the recording medium when the recording bends in response to external vibration or shock. The support member supports the recording medium by making contact with the recording medium only when the external vibration or shock is applied to the storage apparatus.

Abstract: It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid and a base having a crucible lid side surface supported by the lower surface of the crucible lid, and a seed crystal mounting surface on which the seed crystal is mounted and which is a surface on the opposite side of the crucible lid side surface, wherein the base is made of graphite material, the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and the base has at least of a portion in which the cross-sectional area orthogonal to the vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is gradually reduced, and a portion that is getting smaller gradually, from the surface of the seed crystal mounting surface toward the crucible lid side surface.

Abstract: Provided is a transparent conducting film having a favorable optical property, favorable electrical property, and almost no in-plane resistance anisotropy. A method for producing a transparent conducting film provided with a conducting layer containing a metal nanowire and a binder resin, comprises steps of: preparing a coating liquid containing the metal nanowire and the binder resin, and coating the coating liquid on one main face of a transparent substrate, wherein, in the coating step, a bar-coat printing method is performed using a bar provided with a groove having a pitch (P) and a depth (H) which satisfy a ratio P/H of 5 to 30.

Abstract: A corrosion-resistant member including: a metal base material (10); and a corrosion-resistant coating (30) formed on the surface of the base material (10). The corrosion-resistant coating (30) is a stack of a magnesium fluoride layer (31) and an aluminum fluoride layer (32) in order from the base material (10) side. The aluminum fluoride layer (32) is a stack of a first crystalline layer (32A) containing crystalline aluminum fluoride, an amorphous layer (32B) containing amorphous aluminum fluoride, and a second crystalline layer (32C) containing crystalline aluminum fluoride in order from the magnesium fluoride layer (31) side. The first crystalline layer (32A) and the second crystalline layer (32C) are layers in which diffraction spots are observed in electron beam diffraction images obtained by electron beam irradiation and the amorphous layer (32B) is a layer in which a halo pattern is observed in an electron beam diffraction image obtained by electron beam irradiation.

Abstract: Provided are a gas treatment method and a gas treatment device capable of efficiently removing a bromofluoroethylene. A gas containing a bromofluoroethylene is brought into contact with an adsorbent (7) having pores with an average pore diameter of 0.4 nm or more and 4 nm or less in a temperature environment of not less than 0° C. and less than 120° C. to allow the adsorbent (7) to adsorb the bromofluoroethylene, and thus the bromofluoroethylene is separated from the gas.

Abstract: The sensitivity of a magnetic sensor using a sensitive element sensing a magnetic field by the magnetic impedance effect is increased. The magnetic sensor includes: a sensitive element sensing a magnetic field by a magnetic impedance effect; and a focusing member provided to face the sensitive element, configured with a soft magnetic material, and focusing magnetic force lines from outside onto the sensitive element.

Abstract: An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target (12) including an oxide is placed in a chamber (10), and the oxide included in the etching target (12) is etched in the chamber (10) using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below: wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber (10).