Patents Assigned to Showa Denko K.K.
  • WATER-IN-OIL EMULSION COMPOSITION
    Publication number: 20220280396
    Abstract: A water-in-oil emulsion composition includes (a) at least one ascorbic acid phosphate ester compound selected from the group consisting of ascorbic acid phosphate esters and salts thereof, (b) an organically modified clay mineral, (c) an oil-based agent, and (d) water, in which a content of the component (b) is 0.2% by mass to 4.5% by mass.
    Type: Application
    Filed: August 4, 2020
    Publication date: September 8, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Go FUKADA, Eiko KATO, Naoko ITO
  • PHOTOSENSITIVE RESIN COMPOSITION AND ORGANIC EL ELEMENT PARTITION WALL
    Publication number: 20220275241
    Abstract: The present invention reduces inhibition of light sensitization of a photosensitive resin composition containing a black dye and increases sensitivity by improving pattern forming ability. The photosensitive resin composition according to one embodiment of the present invention contains a binder resin (A), a radiation-sensitive compound (B), and a dye (C), wherein the dye (C) contains a black dye (C1) and a dye (C2) other than (C1), the dye (C2) has an absorption maximum at a wavelength of 480-550 nm in an wavelength range of 300-800 nm, and, when the absorbance of the dye (C2) at the absorption maximum wavelength is defined as Abs1 and the average absorbance of the dye (C2) at wavelengths 560-600 nm is defined as Abs2, Abs2/Abs1 equals 0.1-1.0.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 1, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Kentaro FURUE, Yoshikazu ARAI
  • METHOD FOR PRODUCING FLUORINE GAS AND DEVICE FOR PRODUCING FLUORINE GAS
    Publication number: 20220275523
    Abstract: A method for producing fluorine gas including electrolyzing an electrolyte in an electrolytic cell, measuring the water concentration in the electrolyte in the electrolyzing, and sending a fluid generated in the inside of the electrolytic cell in the electrolyzing the electrolyte, from the inside to the outside of the electrolytic cell through a flow path. The flow path in which the fluid flows is switched in accordance with the water concentration in the electrolyte measured in the measuring the water concentration, such that the fluid is sent to a first flow path when the water concentration in the electrolyte measured in the measuring the water concentration is not more than a predetermined reference value, or the fluid is sent to a second flow path when the water concentration is more than the predetermined reference value.
    Type: Application
    Filed: December 3, 2020
    Publication date: September 1, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Shinya OGURO, Yohsuke FUKUCHI, Hiroshi KOBAYASHI
  • Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method
    Patent number: 11427929
    Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Jia Yu, Naoto Ishibashi, Keisuke Fukada, Tomoya Utashiro, Hironori Atsumi
  • SiC single crystal manufacturing apparatus and structure having container and filler for manufacturing SiC single crystal
    Patent number: 11427927
    Abstract: A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Chloroprene copolymer latex composition and molded product thereof
    Patent number: 11427701
    Abstract: There is provided a chloroprene copolymer latex composition capable of obtaining a molded product having excellent mechanical properties and flexibility even when vulcanized and molded under milder conditions than before. A chloroprene copolymer latex composition contains a chloroprene copolymer latex (A), a metal oxide (B), a vulcanization accelerator (C), and an antioxidant (D). The chloroprene copolymer latex (A) is a latex containing particles of a chloroprene copolymer which is a copolymer of chloroprene (A-1), 2,3-dichloro-1,3-butadiene (A-2), and sulfur (A-3). The content of the sulfur (A-3) in the chloroprene copolymer is 0.1 part by mass or more and 1.0 part by mass or less when the total amount of the chloroprene (A-1) and the 2,3-dichloro-1,3-butadiene (A-2) is set to 100 parts by mass.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Tomoaki Murata, Noriko Ogawa, Masanao Kamijo
  • Cubic boron nitride sintered body and manufacturing method thereof, and tool
    Patent number: 11427512
    Abstract: There are provided a cubic boron nitride sintered body having a surface also excellent in adhesiveness to a ceramic coating film, while having excellent wear resistance and defect resistance, and a manufacturing method thereof, and a tool. The cubic boron nitride sintered body of the present invention includes 60.0 to 90.0% by volume of cubic boron nitride, the remainder being a binder phase, wherein the binder phase contains: at least any of a nitride, a boride, and an oxide of Al; at least any of a carbide, a nitride, a carbonitride, and a boride of Ti; and a compound represented by the following formula (1): W2NixCo(1-x)B2(0.40?x<1)??(1).
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Takumi Nakajima, Jiro Yamada
  • Gas supply apparatus and gas supply method
    Patent number: 11427907
    Abstract: Provided is a gas supply apparatus for supplying a gas compound obtained by vaporizing a liquid compound to a target location, the gas supply apparatus comprising: a storage vessel capable of storing the liquid compound; a gas compound supply pipeline, one end of which is connected to the storage vessel, and another end of which is capable of being disposed at the target location; and a temperature control device configured to adjust a temperature of the gas compound or the liquid compound within the storage vessel to be equal to or lower than a surrounding temperature of the gas compound supply pipeline.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Takanori Aoki, Katsumi Mikami
  • Fluorine-containing ether compound, lubricant for magnetic recording medium, and magnetic recording medium
    Patent number: 11427779
    Abstract: A fluorine-containing ether compound represented by Formula (1) is provided. R1—R2—CH2—R3—CH2—R4—R5 ??(1) (In Formula (1), R1 and R5 each represents a group having a heterocyclic ring and may be the same as or different from each other, R2 and R4 each represents a divalent linking group having a polar group and play be the same as or different from each other, and R3 represents a perfluoropolyether chain.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Yuta Yamaguchi, Daisuke Yagyu, Naoya Fukumoto, Shoko Uetake, Tsuyoshi Kato, Hiroyuki Tomita, Ryuuta Miyasaka, Katsumi Murofushi
  • Deposition apparatus having particular arrangement of raw material supply port, partition plate, and opening for measuring a temperature
    Patent number: 11424147
    Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: August 23, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Keisuke Fukada, Naoto Ishibashi, Hironori Atsumi
  • Method of manufacturing SiC single crystal and covering member
    Patent number: 11421339
    Abstract: A method of manufacturing a SiC single crystal includes: a storing step of storing a SiC source, which is a powder, in an inner bottom part of a crucible, wherein the crucible is configured to store the SiC source and to attach a seed crystal to a position of the crucible which faces the SiC source; a placing step of placing a porous material on at least a portion of a first surface of the SiC source, wherein the first surface is positioned on a side of the seed crystal; and a crystal growth step of sublimating the SiC source by heating to grow a crystal on the seed crystal, in which the porous material is formed of carbon or a carbide, and the hole diameter of the porous material is smaller than the average particle diameter of the SiC source.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: August 23, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yoshiteru Hosaka
  • FLUORINE-CONTAINING ETHER COMPOUND, LUBRICANT FOR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM
    Publication number: 20220259513
    Abstract: A fluorine-containing ether compound represented by the following formula (1) is provided. R2—CH2—R1—CH2OCH2CH(OH)—(CH2)n—CH(OH)CH2OCH2—R1—CH2—R2??(1) (in the formula (1), n is an integer of 2 to 6, R1 is a perfluoropolyether chain, R2 is —OCH2CH(OH)CH2O(CH2)mOH (m in the formula is an integer of 2 to 4)).
    Type: Application
    Filed: July 9, 2020
    Publication date: August 18, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoya FUKUMOTO, Daisuke YAGYU, Tsuyoshi KATO, Katsumi MUROFUSHI
  • SiC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD
    Publication number: 20220259764
    Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.
    Type: Application
    Filed: February 28, 2022
    Publication date: August 18, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Ling GUO, Koji KAMEI
  • CANCER CELL PROLIFERATION SUPPRESSION AGENT AND COMPOSITION FOR SUPPRESSING PROLIFERATION OF CANCER CELLS
    Publication number: 20220257621
    Abstract: A cancer cell proliferation suppression agent containing, as an active ingredient, an inositol derivative in which a sugar is bound to inositol is provided. Furthermore, a composition for suppressing proliferation of cancer cells containing the above-mentioned cancer cell proliferation suppression agent and a pharmaceutically acceptable carrier is provided.
    Type: Application
    Filed: May 8, 2020
    Publication date: August 18, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yuko NAKAGAMI, Go FUKADA, Eiko KATO
  • 1,3-BUTANEDIOL
    Publication number: 20220251011
    Abstract: The purpose of the present invention is to stably provide 1,3-butanediol which is less odorous and is suitable for use in cosmetics. The 1,3-butanediol has a. content of odorous substance A, which is represented by chemical formula (A), of 2-10 wtppm and a content of odorous substance B, which is represented by chemical formula (B), of 4-25 wtppm.
    Type: Application
    Filed: December 10, 2020
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Takuya MORIWAKI, Kazuya KIMURA
  • PLASMA ETCHING METHOD
    Publication number: 20220254607
    Abstract: There is provided a plasma etching method having a high etching rate of a silicon nitride film. A plasma etching method includes an etching step of etching a silicon nitride film formed on a substrate (20) using plasma obtained by converting an etching gas containing iodine heptafluoride into plasma.
    Type: Application
    Filed: May 22, 2020
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Daisuke SATO, Kaoru KAIBUKI, Yuki OKA
  • SULFUR DIOXIDE MIXTURE, AND METHOD OF PRODUCING THE SAME, AND FILLING CONTAINER
    Publication number: 20220250908
    Abstract: Provided is a sulfur dioxide mixture that hardly corrodes metals. A sulfur dioxide mixture contains sulfur dioxide and water. The sulfur dioxide mixture is filled in a filling container in such a manner that a gas phase and a liquid phase exist, and the moisture concentration of the gas phase is from 0.005 mole ppm to less than 5,000 mole ppm.
    Type: Application
    Filed: February 17, 2021
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Hideyuki KURIHARA
  • CORROSION-RESISTANT MEMBER
    Publication number: 20220251699
    Abstract: A corrosion-resistant member including: a metal base material (10); a corrosion-resistant coating (30) formed on the surface of the base material (10); and a buffer layer (20) formed between the base material (10) and the corrosion-resistant coating (30). The base material (10) contains a main element having the highest mass content ratio among elements contained in the base material (10) and a trace element having a mass content ratio of 1% by mass or less. The corrosion-resistant coating (30) contains at least one kind selected from magnesium fluoride, aluminum fluoride, and aluminum oxide. The buffer layer (20) contains an element of the same kind as the trace element, and the content ratio obtained by energy dispersive X-ray analysis of the element of the same kind as the trace element contained in the buffer layer (20) is 2% by mass or more and 99% by mass or less.
    Type: Application
    Filed: September 3, 2020
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: So MIYAISHI, Masahiro OKUBO, Masayuki YOSHIMURA, Wataru SAKANE, Teppei TANAKA, Saeko NAKAMURA, Saori YAMAKI
  • METHOD FOR PRODUCING FLUORINE GAS AND DEVICE FOR PRODUCING FLUORINE GAS
    Publication number: 20220251716
    Abstract: A method for producing fluorine gas including electrolyzing an electrolyte in an electrolytic cell, measuring an intensity of sound generated near an anode in an inside of the electrolytic cell as the electrolyte is electrolyzed in the electrolyzing, and sending a fluid generated in the inside of the electrolytic cell in the electrolyzing the electrolyte, from the inside to the outside of the electrolytic cell through a flow path. The flow path is switched in accordance with the intensity of sound measured, such that the fluid is sent to a first flow path when the intensity of sound measured in the measuring an intensity of sound is not more than a predetermined reference value, or the fluid is sent to a second flow path when the intensity of sound measured in the measuring an intensity of sound is more than the predetermined reference value.
    Type: Application
    Filed: December 11, 2020
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Katsumi MIKAMI, Yohsuke FUKUCHI, Hiroshi KOBAYASHI
  • Pin fintype heat sink
    Patent number: D961535
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: August 23, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Kazuo Igarashi