Abstract: A plastic ball grid array package having a reinforcement resin that may address the problem of delamination and cracks in a boundary region between a sealing resin and a substrate. The reinforcement resin is formed at an outer region of a sealing resin and has a height that is lower than that of the sealing resin. The reinforcement resin may be formed of the same material used to form the sealing resin and has a structure completely covering a first surface of the substrate. Accordingly, cracks and delamination defects of the semiconductor package may be reduced by absorbing stress that occurs by physical impact in a boundary region between the substrate and the sealing resin.

Abstract: A micro leadframe package employing an oblique etching method is disclosed. The micro leadframe package includes a semiconductor chip, an oblique-etched micro leadframe (MLF) having a die pad on which the semiconductor chip is mounted via adhesive means, leads formed along outer sides of the die pad, and tie bars for supporting four corners of the die pad, wires for connecting the semiconductor chip with the leads of the MLF, and an epoxy molding compound (EMC) for encapsulating the semiconductor chip, the MLF, and the wires.

Abstract: A tape ball grid array (TBGA) semiconductor package having a one metal layer interconnect substrate is provided. Further provided is a method for making the TBGA package having electrical connection through the one metal layer interconnect substrate down to a ground plane. The method includes: (a) defining at least one via hole through the one metal layer interconnect substrate; (b) filling the at least one via hole of the one metal layer interconnect substrate with a first solder ball; (c) reflowing the first solder ball; (d) placing a second solder ball over the reflowed first solder ball; and (e) reflowing the second solder ball to attach the second solder ball to the reflowed first solder ball. The reflowed first solder ball and the reflowed second solder ball form a ground via connection to the ground plane of the TBGA.

Abstract: A package for a semiconductor chip is provided. The package includes a ground conducting layer. A one metal layer interconnect substrate is attached to the ground conducting layer. The one metal layer interconnect substrate includes a via hole defining a path to the ground conducting layer. A conductive material substantially filling the path defined by the via hole is provided. The conductive material is in contact with the ground conducting layer.

Abstract: Disclosed is a semiconductor package arrangement. The package arrangement includes a heat spreader for dissipating heat generated within the semiconductor package arrangement. The package further includes a ground plane having a first side that is attached to the heat spreader with an electrically insulating adhesive. The ground plane has a first aperture defining a path to a surface of the heat spreader that is configured to receive a semiconductor die. An interconnect substrate is adhesively attached to the ground plane, and the interconnect substrate has a complementary second aperture over the first aperture of the ground plane. Preferably, the interconnect substrate has a plurality of metal patterns for electrically interconnecting the semiconductor die to electrical connections that are external to the semiconductor package arrangement.

Abstract: Disclosed is a semiconductor package arrangement. The package arrangement includes a heat spreader for dissipating heat generated within the semiconductor package arrangement. The package further includes a ground plane having a first side that is attached to the heat spreader with an electrically insulating adhesive. The ground plane has a first aperture defining a path to a surface of the heat spreader that is configured to receive a semiconductor die. An interconnect substrate is adhesively attached to the ground plane, and the interconnect substrate has a complementary second aperture over the first aperture of the ground plane. Preferably, the interconnect substrate has a plurality of metal patterns for electrically interconnecting the semiconductor die to electrical connections that are external to the semiconductor package arrangement.

Abstract: Disclosed is a semiconductor package arrangement. The package arrangement includes a heat spreader for dissipating heat generated within the semiconductor package arrangement. The package further includes a ground plane having a first side that is attached to the heat spreader with an electrically insulating adhesive. The ground plane has a first aperture defining a path to a surface of the heat spreader that is configured to receive a semiconductor die. An interconnect substrate is adhesively attached to the ground plane, and the interconnect substrate has a complementary second aperture over the first aperture of the ground plane. Preferably, the interconnect substrate has a plurality of metal patterns for electrically interconnecting the semiconductor die to electrical connections that are external to the semiconductor package arrangement.

Abstract: A processing device includes an imitation multiport memory circuit (10) interconnecting inputs and outputs of a group of functional units (F1, . . . FN), all operating under control of a single series of very long program instructions. The memory circuit (10) comprises a plurality of separate memory units (15), each having a read port (12) connected to a respective functional unit input, and a crossbar switching circuit (18) connected between the functional unit outputs and write ports of the separate memory units. The memory circuit (10) provides substantially the same performance as a true multiport memory but requires a smaller circuit area, allowing a larger processing device to be integrated in one chip than previously. Collisions for access to a memory unit write port can be resolved without rescheduling by use of a delay element (21,70) and/or an additional write port (82) to a memory unit.

Abstract: In a driver circuit, high- and low-impedance drive means (26 and 28 respectively) operate in parallel to effect a desired output transition. Adaptive control means 32 respond to a threshold value of the output signal (VO) and turn off the low-impedance drive means in the course of the output transition. The low initial output impedance of the driver circuit effects rapid charging of a line capacitance CL, while toward the end of the output transition the higher output impedance of the driver circuit more closely matches the input impedance ZL of a load circuit. This higher impedance dampens ringing and thereby reduces induced supply line noise which is conventionally associated with high-speed driver circuits.

Abstract: A method of forming isolation trenches in CMOS integrated circuits is disclosed. The trench side walls are covered by a thin oxide layer, and the trenches are filled with a highly doped polysilicon. The doped polysilicon has a high work function which prevents oxide charges from inverting the trench side walls and thereby turns off the parasitic transistors at these side walls to reduce latchup.

Abstract: A multi-stage amplifier utilizes capacitive nesting of three or more amplifier stages in combination with multiple feed-forward paths to achieve frequency compensation. Two stages (A.sub.M and A.sub.O) in cascade are first nested with a pole-splitting capacitor (C1) to form a stable device. A stable three-stage amplifier is then created by nesting the two-stage device and a further stage (A.sub.I) with another pole-splitting capacitor (C2) where feed-forward paths are provided from the further stage to both of the other stages.

Abstract: An input/output (I/O) processor and data processing system in which the processor receives and services interrupt request signals from I/O controllers, which requests may be internally or externally coded, and supervises blockwise transfer of data between an external memory associated with a main processing unit and the I/O controllers. The I/O processor includes an internal memory for storing information pertinent to data transfer from each I/O channel including the address where channel programs, decision tables and data buffers are maintained in external memory. A sequencer executes a specialized instruction set which includes instructions that invoke an interpretation means enabling examination of status registers of the I/O controllers and/or data values therefrom and the branching of execution based thereon.

Abstract: In a memory element comprising interconnected logic gates with field effect transistors metastable states are to be avoided. The device's immunity against staying in metastable states is considerably raised by coupling a supply terminal of each logic gate to a power supply voltage via a base-emitter path of a bipolar transistor that has its collector coupled to the logic gate's output.

Abstract: The tail current of a differential transistor pair (12 and 14) is controlled by a feed-back means (40) that couples the pair's tail node (16) to the control input of each transistor for controlling a biasing current through each transistor. The control input of each transistor further receives an input signal in addition to an output signal of the feed-back means. As a result, the circuit has a stable and accurate tail current, and in addition is suitable for a low-voltage supply or for high-current operation.

Abstract: Electrical connections to specified semiconductor or electrically conductive portions (18, 26, and 30) of a structure created from a semiconductive body (10) are created by a process in which a titanium contact layer (34) is deposited on the structure over the specified portions. An electrically conductive barrier material layer (36) which consists principally of non-titanium refractory material is formed over the contact layer. The resulting structure is then annealed at a temperature above 550.degree. C. in order to lower the contact resistance. The anneal is preferably done at 600.degree. C. or more for 10-120 seconds in a gas whose principal constituent is nitrogen. An electrically conductive primary interconnect layer is formed over the barrier material layer after which all three layers are patterned to create a composite interconnect layer.

Abstract: A circuit formed with an input stage (20) and an output stage (22 or 28) uses capacitively enhanced switching to improve switching speed without significantly raising steady-state current utilization. The output stage contains a pair of amplifiers (A1and A2) that respond to complementary signals (V.sub.M1 and V.sub.M2) produced by the input stage. The amplifiers are coupled to a pair of corresponding nodes (N1 and N2). A third amplifier (A3) in the output stage has a control electrode coupled to one of the nodes, a flow electrode coupled to the other node, and another flow electrode coupled to a further node (N3). A current supply (24) provides current at the further node. A charge/discharge element (CD1) produces a capacitive-type charge/discharge action between the further node and a source of a reference voltage (V.sub.R1).

Abstract: A planar electrical interconnection system suitable for an integrated circuit is created by a process in which an insulating layer (31) having a planar upper surface is formed on a substructure after which openings (32) are etched through the insulating layer. A conductive planarizing layer (33) having a planar upper surface is formed on the insulating layer and in the openings by an operation involving isotropic deposition of a material, preferably tungsten, to create at least a portion of the planarizing layer extending from its upper surface partway into the openings. The planarizing layer is then etched down to the insulating layer. Consequently, its upper surface is coplanar with that of the material (33') in the openings. The foregoing steps are repeated to create another coplanar conductive/insulating layer (34 and 36'). If the lower openings are vias while the upper openings are grooves, the result is a planar interconnect level. Further planar interconnect levels can be formed in the same way.

Abstract: In hermetically sealing a base structure (10) of a ceramic package for a semiconductor device to a cap structure (12) of the device, one or more venting slots (36) are initially provided in the base sealing layer (16) or in the cap sealing layer (26). The base and cap structures are then fused together along the two sealing layers and electrical leads (20) by bringing the structures into contact and heating them to a temperature high enough to cause the sealing material to flow readily. The venting slots allow air to escape during the fusing step. This inhibits the formation of air bubbles along the sealing interface and thereby improves the hermeticity of the seal. The structures are subsequently cooled to harden the sealing layers into a unitary layer (28).

Abstract: An integrated circuit (10, 22) contains an active bypass (36) that inhibits high-frequency supply-voltage variations caused by interaction of the circuitry elements (28) with the parasitic inductances (L.sub.HE, L.sub.HP, L.sub.LP, and L.sub.LE) associated with the power supply lines (16.sub.H /24.sub.H /26.sub.H /32.sub.H and 16.sub.L /24.sub.L /26.sub.L /32.sub.L) for the circuit. The bypass centers around a transistor (Q.sub.BP) coupled between the supply lines. An activation circuit (38) provides the transistor with a control signal (V.sub.C) to activate the transistor. A sensing capacitor (C.sub.S) provides a capacitive action between the transistor control electrode and one of the supply lines.

Abstract: A method of fabricating a CMOS-type structure entails forming a pair of conductive portions (68 and 70) on a pair of dielectric portions (72 and 74) lying on monocrystalline silicon (60). N-type dopant-containing ions are implanted into the silicon to form a pair of doped regions (78/82) separated by p-type material under one of the dielectric portions. Boron dopant-containing ions are similarly implanted to form a pair of doped regions (84) separated by n-type material under the other dielectric portion. A sacrificial oxidation is performed by oxidizing surface material of each conductive portion and each doped region and then removing at least part of the so oxidized material (86) down to the underlying silicon. Tungsten (88 and 90) is deposited on the exposed silicon after which a patterned electrical conductor is provided over the tungsten. Use of the sacrificial oxidation substantially reduces tunnel formation during the tungsten deposition.