Patents Assigned to SII Nanotechnology Inc.
  • Patent number: 8912503
    Abstract: A transmission X-ray analyzer for detecting a transmission X-ray image of a sample that moves relatively in a predetermined scanning direction includes; a time delay and integration (TDI) sensor including a plurality of stages of line sensors including the plurality of two-dimensionally arranged image pickup devices arranged in a direction perpendicular to the predetermined scanning direction, being configured to transfer charge accumulated in one line sensor to an adjacent subsequent line sensor; a shield unit for shielding a part of the image of light entering the TDI sensor by moving back and forth in the predetermined scanning direction, the shield unit being disposed between the TDI sensor and the sample; and a shield unit position control unit for controlling a position of the shield unit so as to shield a predetermined number of stages of line sensors among the plurality of stages of line sensors.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: December 16, 2014
    Assignee: SII NanoTechnology Inc.
    Inventor: Yoshiki Matoba
  • Patent number: 8891729
    Abstract: An X-ray analyzer includes a transmission X-ray inspecting portion having a first X-ray source and a transmission X-ray detector for detecting a transmission X-ray that passed through a sample from the first X-ray source, and a fluorescent X-ray inspecting portion having a second X-ray source and a fluorescent X-ray detector for detecting a fluorescent X-ray output from the sample when the sample is irradiated with an X-ray from the second X-ray source. A movement mechanism moves a sample stage that supports the sample. A foreign matter position calculating unit calculates a position of foreign matter in the sample, and a movement mechanism control unit controls the movement mechanism so that the position of the foreign matter calculated by the foreign matter position calculating unit coincides with an optical axis of the second X-ray source.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: November 18, 2014
    Assignee: SII NanoTechnology Inc.
    Inventors: Yoshiki Matoba, Rintaro Nakatani, Tsuneo Sato
  • Patent number: 8869311
    Abstract: A displacement detection mechanism for a vibrationally driven cantilever includes a vibration frequency detector comprised of an LC resonator that detects a change of capacitance between the cantilever and a sample surface due to a change of vibration of the cantilever, and an F-V converter or an FM demodulator that detects a voltage based on the vibration frequency, whereby displacement of the cantilever can be detected. The displacement detection mechanism can be used in a scanning probe microscope to perform shape measurement and physical property measurement without the presence of light.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: October 21, 2014
    Assignee: SII NanoTechnology Inc.
    Inventor: Ryusuke Hirose
  • Patent number: 8822945
    Abstract: A focused ion beam apparatus includes a gas field ion gun unit having an emitter, an ion source gas supply unit for supplying different ion source gases to the emitter, a heater for heating the emitter, and an extraction electrode. A storage section stores, for each gas of a plurality of different types, set values of emitter temperature, gas pressure, extraction voltage to be applied to an extraction electrode, image contrast and image brightness. An input section selects and inputs one of the gas types. A control section reads, from the storage section, the set values of emitter temperature, gas pressure, extraction voltage, image contrast and image brightness, which correspond to the input gas type, and sets a heater, a gas control section, a voltage control section, and an adjustment section for the contrast and brightness of the image.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: September 2, 2014
    Assignee: SII NanoTechnology Inc.
    Inventors: Kenichi Nishinaka, Takashi Ogawa, Yoshihiro Koyama
  • Patent number: 8705698
    Abstract: Provided are an X-ray analyzer and a mapping method for an X-ray analysis which, in a inspection for a harmful substance contained in, for example, a material or a composite electronic component, enable determination as to whether a sample is normal or abnormal to be performed visually based on an image obtained by the X-ray mapping analysis. In the X-ray analyzer, an X-ray mapping image of a sample which is confirmed to be normal in advance is obtained as a reference mapping image. A mapping analysis is performed on a inspection sample. A difference from the reference mapping image is obtained for each pixel, to thereby display a difference mapping image. A region in which the amount of specific element is larger than a reference amount is displayed with high brightness, and hence an abnormal portion may be easily found.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: April 22, 2014
    Assignee: SII Nanotechnology Inc.
    Inventors: Hiroshi Matsumura, Kiyoshi Hasegawa
  • Patent number: 8703247
    Abstract: A cross section processing method to be performed on a sample by irradiating the sample having a layer or a structure of an organic substance on a surface at a cross section processing position thereof with a focused ion beam using a focused ion beam apparatus includes: a protective film forming step for forming a protective film on the surface of the layer or the structure of the organic substance by irradiating the surface of the sample including the cross section processing position with the focused ion beam under the existence of source gas as the protective film; and a cross section processing step for performing cross section processing by irradiating the cross section processing position formed with the protective film with the focused ion beam at a voltage higher than an accelerating voltage in the protective film forming step.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: April 22, 2014
    Assignees: SII Nanotechnology Inc., SII Nanotechnology USA Inc.
    Inventors: Hidekazu Suzuki, Toshiaki Fujii, Mike Hassel-Shearer
  • Patent number: 8664598
    Abstract: An electron microscope has a focused ion beam column positioned relative to an electron beam column so that the focused ion beam substantially perpendicularly intersects the electron beam. A backscattered electron detector is positioned relative to the focused ion beam column so that the direction normal to a detection plane of the backscattered electron detector is substantially perpendicular to the direction of the focused ion beam. The backscattered electron detector is configured and positioned to detect backscattered electrons released in a spread of at least about 70 degrees in width from the surface of the section by irradiation of the section with the electron beam 1a.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: March 4, 2014
    Assignee: SII NanoTechnology Inc.
    Inventors: Masakatsu Hasuda, Atsushi Uemoto, Toshiaki Fujii, Junichi Tashiro
  • Patent number: 8642958
    Abstract: There is provided a composite charged particle beam apparatus, in which a first rotation axis of a rotatable stage intersects a beam irradiation axis of a FIB column and a beam irradiation axis of an SEM so as to be substantially perpendicular thereto, respectively, at a sample observing position, the rotatable stage is provided with a supporting member which can be rotated with respect to the first rotation axis, and the supporting member is connected to a movement mechanism which can dispose the sample at the sample observing position.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: February 4, 2014
    Assignee: SII NanoTechnology Inc.
    Inventors: Haruo Takahashi, Masakatsu Hasuda
  • Patent number: 8615811
    Abstract: A method of measuring vibration characteristics of a cantilever in a scanning probe microscope (SPM). An excitation signal is generated by a forward and backward frequency sweep signal in a frequency range including a resonance frequency of the cantilever. The cantilever is vibrated by supplying the excitation signal to a vibrating portion of the cantilever. The largest amplitude of a displacement of the cantilever in a forward path and in a backward path is directly measured, and an intermediate value of a frequency between frequencies measured on the basis of the directly measured largest amplitude of the displacement of the cantilever is detected as the resonance frequency of the cantilever.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: December 24, 2013
    Assignee: SII NanoTechnology Inc.
    Inventors: Masatsugu Shigeno, Yoshiteru Shikakura
  • Patent number: 8611493
    Abstract: The X-ray fluorescence analyzer (100) includes: an enclosure (10); a door (20) for putting the sample into and out of the enclosure; a height measurement mechanism (7) capable of measuring a height at the irradiation point; a moving mechanism control unit (9) for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit (7) for irradiating the irradiation point with a visible light laser beam; a laser start control unit (9) for irradiating the visible light laser beam by the laser unit (7) when the door is open state; and a height measurement mechanism start control unit (9) for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: December 17, 2013
    Assignee: SII Nanotechnology Inc.
    Inventors: Kiyoshi Hasegawa, Yutaka Ikku, Hideki Takiguchi
  • Patent number: 8608373
    Abstract: In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: December 17, 2013
    Assignee: SII NanoTechnology Inc.
    Inventors: Kazunori Ando, Masayuki Iwasa, Masatsugu Shigeno, Hiroumi Momota, Kazutoshi Watanabe
  • Patent number: 8601609
    Abstract: Provided is a friction force microscope that can measure a friction force by a cantilever in a quantitative manner. The friction force microscope includes a friction force calculating mechanism that calculates an effective probe height and a torsional spring constant of the cantilever from bending sensitivity determined from displacement information in a bending direction of the cantilever and torsional sensitivity determined from displacement information in a torsional direction of the cantilever, respectively, so as to use the calculated values for calculating the friction force.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: December 3, 2013
    Assignee: SII NanoTechnology Inc.
    Inventors: Masatoshi Yasutake, Masafumi Watanabe
  • Patent number: 8601608
    Abstract: A microscope including both an atomic force microscope and a near-field optical microscope and capable of performing electrochemical measurements and a cantilever for the microscope are disclosed. A pointed light transmitting material employed as the probe of an atomic force microscope is coated with a metal layer; the metal layer is further coated with an insulating layer; the insulating layer is removed only at the distal end to expose the metal layer; the slightly exposed metal layer is employed as a working electrode; and the probe can be employed not only as the probe of the atomic force microscope and the near-field optical microscope but also as the electrode of an electrochemical microscope. Consequently, the microscope can have the functions of an atomic force microscope, a near-field optical microscope and an electrochemical microscope.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: December 3, 2013
    Assignees: Japan Science and Technology Agency, SII Nanotechnology Inc.
    Inventors: Kenichi Maruyama, Koji Suzuki, Masato Iyoki
  • Patent number: 8596866
    Abstract: To prevent erroneous detection in detecting a foreign matter, which is caused by a change in distance between a sample and an X-ray detector, provided is an X-ray transmission inspection apparatus including an X-ray tube (11) that irradiates an inspection sample element with an X-ray, an X-ray detector (13) that detects a transmission X-ray when the X-ray is transmitted through a sample, an operation portion (17) that obtains a contrast image from a transmission image of a transmission X-ray, a sensor that calculates a distance between the sample and the detector, and a mechanism that adjusts the position of the X-ray detector, in which an X-ray transmission image is picked up while the distance between the sample and the X-ray detector is kept constant.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: December 3, 2013
    Assignee: SII NanoTechnology Inc.
    Inventor: Yoshiki Matoba
  • Patent number: 8584261
    Abstract: In a cantilever which is used in a scanning probe microscope or the like and has a trapezoidal cross-sectional shape formed through anisotropic etching in a silicon process, a cantilever spring constant is determined without measuring a thickness directly. A cantilever thickness is determined based on upper base and lower base lengths of the trapezoidal cross-sectional shape and geometric regularity of a surface generated by the anisotropic etching. Then, the cantilever spring constant is determined based on the cantilever thickness, a cantilever length, and a Young's modulus.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: November 12, 2013
    Assignee: SII Nanotechnology Inc.
    Inventors: Masafumi Watanabe, Hiroumi Momota
  • Patent number: 8581206
    Abstract: A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: November 12, 2013
    Assignee: SII Nanotechnology Inc.
    Inventors: Xin Man, Kouji Iwasaki, Junichi Tashiro
  • Patent number: 8542275
    Abstract: A cross-section processing and observation method includes: forming a first cross section in a sample by etching processing using a focused ion beam; obtaining image information of the first cross section by irradiating the focused ion beam to the first cross section; forming a second cross section by performing etching processing on the first cross section; obtaining image information of the second cross section by irradiating the focused ion beam to an irradiation region including the second cross section; displaying image information of a part of a display region of the irradiation region from the image information of the second cross section; displaying the image information of the first cross section by superimposing it on the image information being displayed; and moving the display region within the irradiation region. Observation images in which display regions are aligned can be obtained while reducing damage to the sample.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: September 24, 2013
    Assignee: SII Nanotechnology Inc.
    Inventors: Masahiro Kiyohara, Makoto Sato, Haruo Takahashi, Junichi Tashiro
  • Patent number: 8513602
    Abstract: The crystal structure of the emitter can be accurately grasped from a FIM image without being influenced by disturbances, such as contamination, and even if the rearrangement of atoms has been performed, whether or not the crystal structure of the emitter has returned to the original state can also be accurately determined. There is a provided a focused ion beam apparatus including an emitter 10, a gas source 11 which supplies gas G2, a cooling unit 12 which cools the emitter, a heating unit 13 which heats the tip of the emitter, an extraction power source unit 15 which applies an extraction voltage to ionize the gas into gas ions at the tip of the emitter, and then extract the gas ions, a beam optical system 16 which makes the extracted gas ions into a focused ion beam (FIB), and then radiates the focused ion beam onto a sample S, an image acquiring mechanism 17 which acquires a FIM image of the tip of the emitter, and a control unit 7 having a display unit and a storage unit 7b.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: August 20, 2013
    Assignee: SII Nanotechnology Inc.
    Inventors: Takashi Ogawa, Kenichi Nishinaka, Yoshihiro Koyama
  • Patent number: 8513627
    Abstract: An assist gas having a very small amount and a uniform concentration is fed by a charged particle beam apparatus, in which a supply amount of gas is intermittently fed by a massflow controller, and gas is passed through a diffusion mechanism connected to the massflow controller, whereby an assist gas having a very small amount and a uniform concentration.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: August 20, 2013
    Assignee: SII NanoTechnology Inc.
    Inventor: Masayuki Maruo
  • Patent number: 8495759
    Abstract: Provided is an aligning method capable of setting a sample observation unit such as an optical microscope to a probe microscope observation position at high precision. A sample having a known structure is used in advance. A surface of the sample and a shape of a cantilever provided with a probe are observed using the sample observation unit such as the optical microscope. A sample observation position and a probe position which are obtained using the sample observation unit are verified, and a relative positional relationship therebetween is recorded. Then, a first mark indicating a position of the cantilever and a second mark which is displayed in conjunction with the first mark and has the relative positional relationship with the first mark are produced to align the sample relative to the second mark.
    Type: Grant
    Filed: July 28, 2009
    Date of Patent: July 23, 2013
    Assignee: SII NanoTechnology Inc.
    Inventors: Shigeru Wakiyama, Hiroyoshi Yamamoto, Yoshiteru Shikakura, Itaru Kitajima