Patents Assigned to SII Nanotechnology Inc.
  • Patent number: 8115367
    Abstract: By resistor attached by a piezoelectric element, measurement with high accuracy is possible by strain of the piezoelectric element. A piezoelectric actuator includes the piezoelectric element which is formed into an arbitrary shape, polarized in an arbitrary direction, and includes electrodes provided on at least two surfaces opposed in a thickness direction thereof. The piezoelectric actuator also includes a driver power supply for applying a voltage between the electrodes to generate strain in the piezoelectric element, a driver power supply for applying a voltage to generate strain in the piezoelectric element, resistors provided on the electrodes through intermediation of insulators, and a displacement detection device connected with the resistors. The electrodes of the piezoelectric element on which the resistors are provided are set at a ground potential.
    Type: Grant
    Filed: November 24, 2008
    Date of Patent: February 14, 2012
    Assignee: SII NanoTechnology Inc.
    Inventor: Masato Iyoki
  • Patent number: 8111079
    Abstract: A conductivity measuring apparatus includes a probe base having a pair of electrodes disposed on respective opposite surfaces of a portion of the probe base. Observing and grasping probes are supported by the probe base in a cantilever state and are arranged adjancent to and spaced apart from one another by a predetermined distance. The grasping probe has a pair of electrodes disposed on respective opposite surfaces of a portion of the grasping probe confronting the portion of the probe base. A voltage apparatus applies a voltage between the pairs of electrodes on the probe base and the grasping probe to adjust the predetermined distance between the grasping and observing probes. A movement mechanism moves a sample base and the observing and grasping probes relative to each other to bring conductive tips of the observing and grasping probes into contact with respective contact points on a sample supported on the sample base.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: February 7, 2012
    Assignee: SII NanoTechnology Inc.
    Inventors: Masatoshi Yasutake, Takakazu Fukuchi
  • Patent number: 8068583
    Abstract: Provided is an X-ray analysis apparatus including: an X-ray tubular bulb for irradiating a sample with a radiation beam; an X-ray detector for detecting a characteristic X-ray and a scattered X-ray and outputting a signal containing energy information on the characteristic X-ray and the scattered X-ray; an analyzer for analyzing the signal; a sample stage capable of moving an irradiation point relatively with respect to the sample within a mapping area set in advance; and an X-ray mapping processing section for discriminating an X-ray intensity corresponding to a specific element, determining an intensity contrast in which a color or lightness is changed in accordance with the X-ray intensity, and for performing image display at a position corresponding to the irradiation point, in which the X-ray mapping processing section determines the intensity contrast of the X-ray intensity at the irradiation point by setting in advance the X-ray intensity discriminated as to a reference material in which a component el
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: November 29, 2011
    Assignee: SII Nanotechnology Inc.
    Inventors: Yoshiki Matoba, Kanji Nagasawa
  • Patent number: 8058780
    Abstract: The cylindrical piezoelectric actuator which comprised a piezoelectric element which provided electrode in each of an inner peripheral face and an outer peripheral face which was cylindrical at least, and drive power supply to drive it. And the outer side electrode of the piezoelectric element covered the substantially circumferential outer face entirety and it was connected to a ground potential, and the electrode in the internal perimeter surface connected to drive power supply.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: November 15, 2011
    Assignee: SII NanoTechnology Inc.
    Inventor: Masato Iyoki
  • Patent number: 8024816
    Abstract: In detecting a displacement of a cantilever (2) by a displacement detecting mechanism (5) and allowing a probe (1) and a sample (8) to approach each other by at least one of a coarse-movement mechanism (13) and a vertical direction fine-movement mechanism (11) at the same time, an excitation mechanism (4) excites the cantilever (2) with a first excitation condition and the probe (1) and the sample (8) are allowed to approach each other with a first stop condition, and then the cantilever (2) is excited with a second excitation condition different from the first excitation condition, a second stop condition is set, and the probe (1) and the sample (8) are allowed to approach each other by the at least one of the vertical direction fine-movement mechanism (11) and the coarse-movement mechanism (13) until the second stop condition is satisfied.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: September 20, 2011
    Assignee: SII NanoTechnology Inc.
    Inventors: Masato Iyoki, Yoshiteru Shikakura, Masafumi Watanabe
  • Patent number: 7997124
    Abstract: A scanning probe microscope has a cantilever mounted to undergo oscillation movement over a surface of a sample. The cantilever has a probe on a distal end thereof. A Z-axis controlling amount calculating mechanism calculates a controlling amount for keeping constant an oscillation amount of the cantilever. A Z-axis driving mechanism drives in a Z direction the cantilever or the sample in accordance with the controlling amount from the Z-axis controlling amount calculating mechanism. A driving range limiting device limits a driving range of the Z-axis driving mechanism. A driving range setting device optionally sets the driving range of the Z-axis driving mechanism.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: August 16, 2011
    Assignee: SII NanoTechnology Inc.
    Inventors: Yoshiteru Shikakura, Kazutoshi Watanabe
  • Patent number: 8000439
    Abstract: An X-ray tube which irradiates a primary X-ray to an irradiation point on a sample, an X-ray detector which detects a characteristic X-ray and a scattered X-ray emitted from the sample and outputs a signal including energy information of the characteristic X-ray and scattered X-ray, an analyzer which analyzes the signal, a first observation system which optically observes a surface of the sample in order to determine the irradiation point, and a second observation system which has a smaller depth of field than the first observation system, optically observes a narrow region, and measures the distance from the determined irradiation point by focus adjustment are included.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: August 16, 2011
    Assignee: SII NanoTechnology Inc.
    Inventor: Yoshiki Matoba
  • Patent number: 7973280
    Abstract: An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: July 5, 2011
    Assignee: SII Nanotechnology Inc.
    Inventors: Haruo Takahashi, Yutaka Ikku, Yo Yamamoto, Kouji Iwasaki
  • Patent number: 7970101
    Abstract: An X-ray tube which irradiates a primary X-ray to an irradiation point on a sample, an X-ray detector which detects a characteristic X-ray and a scattered X-ray emitted from the sample and outputs a signal including energy information on the characteristic X-ray and scattered X-ray, an analyzer which analyzes the signal, a sample stage on which the sample is placed, a moving mechanism which moves the sample on the sample stage, the X-ray tube, and the X-ray detector relative to each other, a height measuring mechanism which measures a maximum height of the sample, and a control unit which adjusts the distance between the sample and the X-ray tube and the distance between the sample and the X-ray detector by controlling the moving mechanism on the basis of the measured maximum height of the sample, are included.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: June 28, 2011
    Assignee: SII Nanotechnology Inc.
    Inventors: Noriaki Sakai, Toshiyuki Takahara, Yoshiki Matoba
  • Patent number: 7951303
    Abstract: By working a grabbing portion by a charged particle beam of FIB or the like, the grabbing portion in parallel with the beam can be formed, and also dust adhered to the grabbing portion is removed. When a small sample represented by a TEM sample is fabricated by being cut out by etching by a charged particle beam and is carried at inside of an apparatus of irradiating a charged particle beam, the sample is etched in a direction of irradiating the charged particle beam, and therefore, a mechanism pinched by a grabbing face of a grabbing portion can be worked in a direction the same as that in working the sample, and therefore, a change in an attitude can be reduced when the sample and the grabbing face are fabricated by parallel faces.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: May 31, 2011
    Assignee: Sii Nanotechnology Inc.
    Inventor: Masanao Munekane
  • Patent number: 7945964
    Abstract: Provided are a structure of an apparatus for analysis, inspection, and measurement in which a support structure supporting a detection unit is resistant to disturbance, suppresses a reduction in resolution during large-sample measurement, and has high rigidity, and a probe microscope using the apparatus structure. The apparatus structure supporting the detection unit which is opposed to a sample which is located on a unit movable in at least one axis direction and is an object to be analyzed has an arch shape. In the apparatus structure having the arch shape and supporting the detection unit, a surface substantially perpendicular to a flat surface portion of a sample holder located immediately under the apparatus structure is formed. The detection unit is supported on the perpendicular surface. The arch-shaped apparatus structure is a curved structure consistent with a catenary curve.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: May 17, 2011
    Assignee: SII NanoTechnology Inc.
    Inventors: Shigeru Wakiyama, Kenichi Akamatsu
  • Patent number: 7945965
    Abstract: The sensor has the self-detecting probe including a body portion, an elongated belt-like flexible substrate, connecting members, a resinous portion, and external contacts formed at the ends of the flexible substrate brought out of liquid. The probe further includes a cantilever whose base end is supported to the body portion, a strain resistive element whose resistance value varies according to the amount of displacement of the cantilever, and interconnects electrically connected with the strain resistive element. A probe tip is formed at the front end of the cantilever. The flexible substrate has an interconnect pattern sandwiched between two insulating sheets. The flexible substrate supports the body portion while the cantilever protrudes outwardly. At least one end of the flexible substrate is brought out of liquid. The connecting members connect the interconnects with the interconnect pattern.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: May 17, 2011
    Assignee: SII NanoTechnology Inc.
    Inventors: Naoya Watanabe, Masatsugu Shigeno, Masato Iyoki
  • Patent number: 7927769
    Abstract: A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: April 19, 2011
    Assignee: SII Nanotechnology Inc.
    Inventors: Ryoji Hagiwara, Osamu Takaoka, Tomokazu Kozakai
  • Patent number: 7923267
    Abstract: A substrate comprises a substrate main body having a surface on which a measurement object article is to be formed. A reference scale is disposed on the surface of the substrate main body in the vicinity of a region of the surface where the measurement object article is to be formed. The reference scale has adjacent graduations spaced-apart a preselected distance from one another.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: April 12, 2011
    Assignee: SII Nanotechnology Inc.
    Inventors: Masanao Munekane, Junichi Tashiro
  • Patent number: 7910888
    Abstract: Provided is an X-ray analyzer capable of significantly suppressing an influence of an external magnetic field on a transition edge sensor (TES). The X-ray analyzer includes: a TES (7) for detecting energy of a received X-ray as a temperature change and outputting the temperature change as a current signal; a superconducting magnetic shield (8) which contains the TES (7) and enters a superconducting state; and a room temperature magnetic shield (9) which covers the superconducting magnetic shield (8) and performs external magnetic field shielding until the superconducting magnetic shield (8) enters the superconducting state, in which the superconducting magnetic shield (8) and the room temperature magnetic shield (9) are concentrically arranged to have a cylindrical shape.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: March 22, 2011
    Assignee: SII NanoTechnology Inc.
    Inventors: Keiichi Tanaka, Akikazu Odawara, Satoshi Nakayama, Sumio Iijima, Shunji Bandow
  • Patent number: 7804066
    Abstract: Provided is a charged-particle beam apparatus capable of preventing a small amount of dust from being attached to an electrostatic lens serving as an objective lens to apply a high voltage to the electrostatic lens. The charged-particle beam apparatus 1 includes a chamber 2 which has an interior 2a evacuated by an intra-chamber evacuating means 4, and a lens-barrel 3 which emits a charged-particle beam B1 onto a sample S put in the interior 2a of the chamber 2.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: September 28, 2010
    Assignee: SII NanoTechnology Inc.
    Inventors: Takashi Ogawa, Hiroto Muto
  • Patent number: 7802916
    Abstract: There is provided a differential scanning calorimeter for exactly measuring a calorie variation of the measured sample on the basis of the temperature difference between sample container and the reference container without the influence of the heat irregularity incoming from the surroundings and the noise components.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: September 28, 2010
    Assignee: SII NanoTechnology Inc.
    Inventor: Yoshihiko Teramoto
  • Patent number: 7804067
    Abstract: When a characterization of a tip of a diamond stylus for working is needed, the tip of the diamond stylus for working used is observed by a high resolution scanning electron microscope of a high acceleration voltage under a steam atmosphere. When the tip of the diamond stylus for working is worn or when a shape of the tip of the stylus needs to be changed, the tip of the diamond stylus for working is worked by selectively irradiating an electron beam only to a necessary region by increasing an amount of steam and an amount of a current of the electron beam. When a working chip is strongly adhered to the diamond stylus for working and needs to be removed, the electron beam is selectively irradiated only to the working chip adhered to the tip of the diamond stylus for working to be removed under a xenon fluoride atmosphere.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: September 28, 2010
    Assignee: SII NanoTechnology Inc.
    Inventor: Osamu Takaoka
  • Patent number: 7789557
    Abstract: A superconducting radiometry apparatus has a micro-calorie meter that detects an energy of a radiant ray as a temperature change. A signal detection mechanism detects an electric current flowing to the micro-calorie meter. A heat addition device adds a quantity of heat to the micro-calorie meter. A peak value monitor measures, in synchronization with the addition of the quantity of heat to the micro-calorie meter, a peak value of an output voltage corresponding to an output signal from the signal detection mechanism. An energy correction device corrects, on the basis of an output from the peak value monitor, an energy value so as to become a peak value corresponding to the quantity of heat added to the micro-calorie meter.
    Type: Grant
    Filed: June 7, 2007
    Date of Patent: September 7, 2010
    Assignee: SII NanoTechnology Inc.
    Inventors: Keiichi Tanaka, Akikazu Odawara, Satoshi Nakayama
  • Patent number: 7787133
    Abstract: The optical displacement-detecting mechanism has: a light source for irradiating a target for measurement with light; a light source-driving circuit for driving the light source; an optical detector made from a semiconductor for receiving light after the irradiation of the target for measurement by the light source and converting the light into an electric signal thereby to detect an intensity of light; and an amplifier including a current-voltage conversion circuit for performing current-to-voltage conversion on a detection signal of the optical detector with a predetermined amplification factor. In the optical displacement-detecting mechanism, a light source having a spectrum half width of 10 nm or larger is used, whereby the light source can be driven with an output power of 2 mW or larger without generating mode hop noise and optical feedback noise.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: August 31, 2010
    Assignee: SII NanoTechnology Inc.
    Inventors: Masato Iyoki, Hiroyoshi Yamamoto, Kazutoshi Watanabe