Abstract: Provided is a method of evaluating a probe tip shape in a scanning probe microscope, including: measuring the probe tip shape by a probe shape test sample having a needle-like structure; determining radii of cross-sections at a plurality of distances from the apex; and calculating, based on the distances and the radii, a radios of curvature when the probe tip shape is approximated by a circle.

Abstract: Provided is a lamella preparation apparatus including an EB column (1), an FIB column (2), a reflected electron detector (5) for detecting charged particles released from a lamella (21), an input unit (10) for setting a first measurement region (41) on an upper side and a second measurement region (42) on a lower side of the lamella (21), and a calculation unit (15) for calculating a slant angle of the lamella (21) from a detected amount of the charged particles generated from the first measurement region (41) and a detected amount of the charged particles generated from the second measurement region (42) by irradiation of the electron beam (8) and a distance between the first measurement region (41) and the second measurement region (42).

Abstract: A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.

Abstract: In order to prevent misdetection and erroneous detection by clearly determining only a contrast caused by a foreign matter, there are provided an X-ray inspection method and an X-ray inspection device including: an X-ray tube (11) for irradiating a measurement sample with a characteristic X-ray having energy lower than an X-ray absorption edge of one element contained in the measurement sample and having energy higher than an X-ray absorption edge of a detection element; an X-ray detector (13) for receiving a transmission X-ray obtained when the X-ray passes through the sample; and an operation portion (15) for obtaining a contrast image from a transmission image of the transmission X-ray.

Abstract: An X-ray analysis apparatus including: a radiation source configured to irradiate an irradiation point on a sample with radiation; an X-ray detector configured to detect a characteristic X-ray emitted from the sample, and output a signal including energy information about the characteristic X-ray; an analyzer configured to analyze the signal; a sample stage configured to allow placement of the sample thereon; a shifting mechanism being capable of relatively shifting the sample on the sample stage and the radiation source and the X-ray detector with respect to each other; a height measuring mechanism being capable of measuring the height of the irradiation point on the sample; and a controller configured to control the shifting mechanism on the basis of the measured height of the irradiation point on the sample and adjust the distance of the sample with respect to the radiation source and the X-ray detector is used.

Abstract: A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit that supplies gas to the tip, and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the tip and extracts ions by applying a voltage between the extracting electrode and the tip. A cathode electrode accelerates the ions toward a sample. An aperture member has an opening that passes therethrough a part of the ion beam ejected from the ion gun unit, and a lens system focuses the ion beam onto the sample.

Abstract: To avoid an influence on measurement accuracy in a case where an observation window for a measurement sample is provided to a thermal analysis apparatus, the influence being imposed by thermal conduction through the observation window, the observation window is formed of layers of transparent members, and a gap layer is provided between the layers, to thereby reduce the thermal conduction. Gas or solid having a high heat insulation property is employed for the gap layer to further enhance a heat insulation property of the observation window. Accordingly, a change due to heating of the measurement sample is visually observed in the thermal analysis apparatus, to thereby obtain a thermal change or a physical change with higher accuracy.

Abstract: The differential scanning calorimeter includes: a heat sink, which stores a measuring sample and a reference material; a heater, which heats the heat sink; a cooling block, which is separated away from the heat sink, and positioned below the heat sink; a thermal resistor, which is connected between the heat sink and the cooling block, and forms a heat flow path therebetween; a cooling head, which is detachably fitted to the cooling block, and is cooled by an external cooling device; and differential heat flow detectors, which output a temperature difference between the measuring sample and the reference material as a heat-flow-difference signal, in which: the cooling block forms a side wall to fit the bore of the cooling head outward from the joint of the thermal resistance body; the top surface of the cooling head is lower than the joint.

Abstract: A section processing apparatus has a mark forming control portion that transmits control information for forming marks on a surface of a sample. Each of the marks has at least two portions intersecting at a converging portion located at a previously determined position of an observation target section of the sample or in the vicinity of the previously determined position. A first focused ion beam apparatus emits a first focused beam for forming each of the marks on the surface of the sample based on the control information transmitted by the mark forming control portion and for processing a section of the sample.

Abstract: A micro cross-section processing method includes the steps of determining a linear cross-section estimated position including an observation object on a surface of the sample, irradiating the focused ion beam to the cross-section estimated position perpendicularly to or at a tilt angle to form a cross-section at a position in front of the cross-section estimated position, irradiating the focused ion beam to both ends of the cross-section to form side cuts extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam to a position on the surface of the cross-section and at a position deeper than the observation object to form a bottom cut extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam along from the side cuts to the cross-section estimated position to form wedges connecting to the bottom cut, and applying impact to a region in front of the cross-section estimated position of the sample to cleave the vicinity

Abstract: There is provided a sample processing and observing method including irradiating a focused ion beam to a sample to form an observed surface, irradiating an electron beam to the observed surface to form an observed image, removing the surface opposite to the observed surface of the sample, forming a lamella including the observed surface and obtaining a transmission observed image for the lamella.

Abstract: A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.

Abstract: A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.

Abstract: A charged particle beam apparatus includes an ion beam column having an ion source for generating an ion beam, a first objective lens electrode which forms a first objective lens for focusing the ion beam on a sample, and a second objective lens electrode which is disposed at a position closer to the sample than the first objective lens electrode and forms a second objective lens for focusing an ion beam accelerated with a lower acceleration voltage on the sample.

Abstract: A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.

Abstract: Provided is a cantilever that is capable of bending and deforming in an active manner by itself. The cantilever includes: a lever portion having a proximal end that is supported by a main body part; and a resistor member that is formed in the cantilever and generates heat when a voltage is applied, to thereby deform the lever portion by thermal expansion due to the heat.

Abstract: A sample preparing device has a sample stage that supports a sample and undergoes rotation about a first rotation axis to bring a preselected direction of the sample piece into coincidence with an intersection line between a first plane formed by a surface of the sample piece and a second plane. A manipulator holds sample piece of the sample and undergoes rotation about a second rotation axis independently of the sample stage to rotate the sample piece to a preselected position in the state in which the preselected direction of the sample piece coincides with the intersection line. The manipulator is disposed relative to the sample stage so that an angle between the second rotation axis and the surface of the sample is in the range of 0° to 45°.

Abstract: Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface.

Abstract: A cantilever has a probe portion and a cantilever portion having a free end portion from which the probe portion extends. A displacement detecting portion detects a displacement of the cantilever portion according to an interaction between a sample and the probe portion. An electrode portion is connected to the displacement detecting portion. An insulation film is formed over at least one of the electrode portion and the displacement detecting portion. A functional coating in the form one of a conductive film, a magnetic film, and a film having a light intensity amplifying effect is disposed on the insulation film.

Abstract: A charged particle beam apparatus includes a charged particle source, an aperture, an object lens, an observing unit, an aperture driving portion, and a control portion. The control portion includes a spot pattern forming portion that forms a plurality of spot patterns on a surface of a sample by irradiating a charged particle beam, an analyzing portion that calculates a position of a spot center of the spot pattern and a geometrical center position of a halo, and an adjusting position determining portion that calculates an adjusting position based on a position of intersecting lines connecting the positions of the spot centers of the respective spot patterns and the center position of the halo. In this manner, the position of the aperture can be easily and accurately adjusted in a short period of time by moving the center axis of the aperture to the adjusting position.