Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Current-mode control for radio-frequency (RF) power amplifiers. In some embodiments, an RF power amplifier control circuit can include a sensor configured to measure a base current of a power amplifier and generate a sensed current. The control circuit can further include a sensing node configured to receive a reference current and perform a current-mode operation with the sensed current to yield an error current. The control circuit can further include a control loop configured to generate a control signal based on the error current to adjust an operating parameter of the power amplifier.

Abstract: A limiter circuit is integrated into an RF power amplifier. The limiter circuit automatically starts adding attenuation at the input of the RF power amplifier after a predetermined input power level threshold is exceeded, thereby extending the safe input drive level to protect the amplifier. In a preferred embodiment of the invention, the limiter circuit is implemented using a pseudomorphic high electron mobility transistor (PHEMT) device or a metal semiconductor field effect transistor (MESPET) device. Diode connected transistors or Schottky diodes may also be used in the limiter circuit.

Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.

Abstract: Enhanced Q high dielectric constant material for microwave applications. In some embodiments, a composition can include a material with a formula Ba4+xSm(2/3)(14?x+0.5y)Ti18?yAlyO54, with the quantity y being in a range 0<y<2, and the quantity x being in a range 0<x<2?y. Such a material can have a dielectric constant value greater than 60 and a Qf value greater than 10,000 at a frequency (f) at or less than 1 GHz. In some embodiments, a material having such properties can be implemented as a ceramic device and be utilized as a dielectric microwave resonator. Such a microwave resonator can be utilized as, for example, a narrowband radio-frequency (RF) filter.

Abstract: An integrated circuit architecture and circuitry is defined by a die structure with a plurality of exposed conductive pads arranged in a grid of rows and columns. The die structure has a first operating frequency region with a first transmit and receive chain, and a second operating frequency region with a second transmit chain and a second receive chain. There is a shared region of the die structure defined by an overlapping segment of the first operating frequency region and the second operating frequency region with a shared power supply input conductive pad connected to the first transmit chain, the second transmit chain, the first receive chain, and the second receive chain, and a shared power detection output conductive pad connected to the first transmit chain and the second transmit chain.

Abstract: A radio frequency switch circuit with improved harmonic suppression and low insertion loss has an antenna port and a plurality of signal ports. A plurality of transistor switch circuits, are connected to a respective one of the plurality of signal ports and to the antenna port. Each of the transistor switch circuits has a transistor, which in an off state, together with a harmonic suppression capacitor and a parallel inductor both connected thereto, define a tank circuit that suppresses RF signals applied to the corresponding transistor switch circuit from a different one of the transistor switch circuits. The harmonic suppression capacitor is tuned to distribute large signal voltage swings in the RF signal amongst parasitic diodes of the transistor.

Abstract: Devices and methods related to radio-frequency (RF) switches having reduced-resistance metal layout. In some embodiments, a field-effect transistor (FET) based RF switch device can include a plurality of fingers arranged in an interleaved configuration such that a first group of the fingers are electrically connected to a source contact and a second group of the fingers are electrically connected to a drain contact. At least some of the fingers can have a current carrying capacity that varies as a function of location along a direction in which the fingers extend. Such a configuration of the fingers can desirably reduce the on-resistance (Ron) of the FET based RF switch device.

Abstract: Gate structures for semiconductor devices include a silicon nitride layer, an electron beam evaporated tantalum nitride layer disposed on the silicon nitride layer, a first electron beam evaporated titanium layer disposed on the tantalum nitride layer, an electron beam evaporated gold layer deposited on the first titanium layer, and a second electron beam evaporated titanium layer deposited on the gold layer.

Abstract: A radio frequency low noise amplifier circuit with a receive signal input, a receive signal output, and a voltage source include a low noise amplifier and a coupled inductor circuit with a primary inductive chain connected to the output of the low noise amplifier and to the voltage source. The coupled inductor circuit further includes a secondary inductive chain with a first inductor electromagnetically coupled to the primary inductive chain, and a second inductor in series with the first inductor and magnetically coupled to the primary inductive chain. The second inductor is connected to a feedback node of the low noise amplifier. There is an output matching network connected to the first inductor of the secondary inductive chain and to the receive signal output.

Abstract: Light-load control devices and methods implemented in applications such as voltage converters. In some embodiments, a control system for a voltage converter can be configured to determine whether the voltage converter is in a first load state such as a light-load state. The control system can be further configured to generate a first driving signal when the voltage converter is in the light-load state. The control system can be further configured to route the first driving signal to a control element of the voltage converter when the voltage converter is in the light-load state, and to route a second driving signal to the control element when the voltage converter is in a second load state such as a heavier-load state. Such a control system can yield reduced power consumption of the control element when the voltage converter is in the light-load state.

Abstract: A modular test fixture for testing electronic devices. In some embodiments, such a modular test fixture can include a support frame having a base, and a substrate having a plurality of test components, with the substrate being coupled to the base. The modular test fixture can further include an upper support positioned above the support frame, and a plurality of suspension elements that each extend between the upper support and the support frame. The suspension elements can couple the upper support to the support frame, and the upper support can be movable relative to the support frame. The modular test fixture can further include a daughterboard module coupled to the upper support, and a daughterboard having a test device interface. The daughterboard can be coupled to the daughterboard module and be operatively coupled to the plurality of test components.

Abstract: A power amplifier module can include one or more switches, a coupler module, input signal pins, and a controller having first and second output terminals. The input signal pins can receive a voltage input/output signal, a clock input signal, and a data input signal. The controller can (i) set a mode of the one or more switches using a synchronous communication protocol in which the controller outputs a synchronous clock signal on the first output terminal and a data signal on the second output terminal, when the power amplifier module is in a first operating mode, or (ii) set a mode of the coupler module using an asynchronous communication protocol in which the controller outputs a first asynchronous control signal on the first output terminal and a second asynchronous control signal on the second output terminal, when the power amplifier module is in a second operating mode.

Abstract: Field-effect transistor (FET) stack voltage compensation. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series between the first and terminal and the second terminal. Each switching element has a parameter that is configured to yield a desired voltage drop profile among the connected switching elements. Such a desired voltage drop profile can be achieved by some or all FETs in a stack having variable dimensions such as variable gate width or variable numbers of fingers associated with the gates.

Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.

Abstract: Power amplification system with shared common base biasing. A power amplification system can include a plurality of cascode amplifier sections. Each one of the plurality of cascode amplifier sections can include including a first transistor and a second transistor. The power amplification system can include a plurality of common emitter biasing components. Each one of the plurality of common emitter biasing components can be coupled to a base of the first transistor of a respective one of the plurality of cascode amplifier sections and can be controllable to bias the first transistor of the respective one of the plurality of cascode amplifier sections. The power amplification system can include a common base biasing component coupled to a base of the second transistor of each of the plurality of cascode amplifier sections and controllable to bias the second transistor of each of the plurality of cascode amplifier sections.

Abstract: Aspects of this disclosure relate to a cascode circuit electrically coupled between an amplifier configured to amplify a radio frequency (RF) signal and different loads. The cascode circuit can function as a switch to selectively provide an output from the amplifier to a number of different loads. In certain embodiments, the cascode circuit can be electrically coupled between different stages of a multi-stage power amplifier. For instance, the amplifier can be a first stage of the multi-stage power amplifier and the different loads can include different power amplifier transistors of a second stage of the multi-stage amplifier. The cascode circuit can be implemented by bipolar transistors according to certain embodiments.

Abstract: Aspects of this disclosure relate tuning an impedance presented to a common port of a multi-throw switch and a tunable notch filter coupled to the common port. The impedance presented to the common port can be tuned based on an impedance associated with a throw of the multi-throw switch that is activated. According to embodiments of this disclosure, a shunt inductor in parallel with a tunable capacitance circuit can tune the impedance presented to the common port of the multi-throw switch. In certain embodiments, the tunable notch filter includes a series LC circuit in parallel with a tunable impedance circuit.

Abstract: Doherty power amplifier with tunable input network. An input network for a Doherty power amplifier can include a splitter circuit configured to receive a radio-frequency (RF) signal and split the RF signal into a first portion along a first path to a carrier amplifier of the Doherty power amplifier and a second portion along a second path to a peaking amplifier of the Doherty power amplifier. The input network can further include a tunable input circuit implemented along either or both of the first path and second path. The tunable input circuit can be configured to provide control of the amplitude and phase of either or both of the first portion and second portion.

Abstract: Aspects of this disclosure relate to a tunable notch filter. In an embodiment, a tunable notch filter includes a series LC circuit in parallel with a tunable impedance circuit, and the tunable notch filter is in a radio frequency signal path associated with a common port of a multi-throw radio frequency switch. According to certain embodiments, the tunable notch filter can be in a radio frequency signal path between an antenna switch and an antenna port.