Abstract: An antenna switch module includes a radio-frequency input port, a radio-frequency output port, a radio-frequency core connected between the radio-frequency input port and the radio-frequency output port, the radio-frequency core being configured to operate in each of a plurality of operational states, the plurality of operational states including a first subset of operational states and a second subset of operational states, and a decoder configured to receive an input signal indicating a first operational state of the radio-frequency core, the first operational state being of the first subset of operational states, generate an output control signal corresponding to the first operational state, detect a transition of the radio-frequency core to a second operational state, determine that the second operational state is of the second subset of operational states, and insert an intermediate output signal corresponding to an intermediate operational state of the radio-frequency core in response to said determinat

Abstract: A semiconductor structure includes a heterojunction bipolar transistor (HBT) including a collector layer located over a substrate, the collector layer including a semiconductor material, and a field effect transistor (FET) located over the substrate, the FET having a channel formed in the semiconductor material that forms the collector layer of the HBT. In some implementations, a second FET can be provided so as to be located over the substrate and configured to include a channel formed in a semiconductor material that forms an emitter of the HBT. One or more of the foregoing features can be implemented in devices such as a die, a packaged module, and a wireless device.

Abstract: According to some implementations, a voltage supply system includes a boost converter including a bypass core. The voltage supply system also includes a buck converter configured to receive an input voltage and generate a buck voltage. The voltage supply system further includes a routing circuit configured to provide the buck voltage as an input to the boost converter.

Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.

Abstract: Systems and methods related to linear and efficient broadband power amplifiers are disclosed. In some embodiments, a method for amplifying a radio-frequency signal includes providing a Doherty amplifier circuit having a carrier amplification path and a peaking amplification path. The method includes receiving an radio-frequency signal and splitting the radio-frequency signal into a first portion and a second portion, the first portion provided to the carrier amplification path, the second portion provided to the peaking amplification path. The method further includes combining, using a balance to unbalance circuit, outputs of the carrier amplification path and the peaking amplification path to yield an amplified radio-frequency signal.

Abstract: Metal layout for radio-frequency (RF) switches. In some embodiments, an RF switching device can include a plurality of field-effect transistors (FETs) arranged in series to form a stack. Each of at least some of the FETs can include a source contact and a drain contact, a first group of fingers electrically connected to the source contact, and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with the first group of fingers. At least some of the first group of fingers and the second group of fingers can include a first metal M1 and a second metal M2 arranged in a stack. At least one of the first metal M1 and the second metal M2 can include a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends.

Abstract: Circuits and methods related to adjustable compensation for parasitic effects in radio-frequency switch networks. In some embodiments, an adjustable compensation circuit for a radio-frequency (RF) circuit can include an inductive circuit that couples a selected node of the RF circuit with a reference node. The inductive circuit can be configured to provide a plurality of inductance values. In some embodiments, the RF circuit can be, for example, a switch network having a plurality of switchable RF signal paths, the reference node can be a ground node, and the selected node can be a common node such as an antenna port.

Abstract: A radio frequency (RF) filter circuit for rejecting one or more spurious components of an input signal has a first resonator circuit including a first capacitor and a first coupled inductor pair of a first inductor and a second inductor, and a second resonator circuit with a second capacitor and a second coupled inductor pair of a third inductor and a fourth inductor. First and second resonator coupling capacitors are connected to the first resonator circuit and the second resonator circuit. A first port and a second port are connected to the first resonator circuit and the second resonator, with the filtered signal of the input signal passed through both the first resonator circuit and the second resonator circuit being output.

Abstract: Disclosed are structures and methods related to metallization of a doped gallium arsenide (GaAs) layer. In some embodiments, such metallization can include a tantalum nitride (TaN) layer formed on the doped GaAs layer, and a metal layer formed on the TaN layer. Such a combination can yield a Schottky diode having a low turn-on voltage, with the metal layer acting as an anode and an electrical contact connected to the doped GaAs layer acting as a cathode. Such a Schottky diode can be utilized in applications such as radio-frequency (RF) power detection, reference-voltage generation using a clamp diode, and photoelectric conversion. In some embodiments, the low turn-on Schottky diode can be fabricated utilizing heterojunction bipolar transistor (HBT) processes.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to provide a radio frequency signal at an output, an output matching network coupled to the output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal, and a harmonic termination circuit coupled to the output of the power amplifier. The power amplifier is included on a power amplifier die. The output matching network can include a first circuit element electrically connected to an output of the power amplifier by way of a pad on a top surface of a conductive trace, in which the top surface has an unplated portion between the pad the power amplifier die. The harmonic termination circuit can include a second circuit element. The first and second circuit elements can have separate electrical connections to the power amplifier die. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Aspects of this disclosure relate to reducing insertion loss associated with a bypass path. In an embodiment, an apparatus includes a first switch having at least two throws, a second switch having at least two throws, a bypass path between the first switch and the second switch, and at least one inductor. The at least one inductor is configured to compensate for capacitance associated with the bypass path to cause insertion loss of the bypass path to be reduced.

Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench above at least a portion of the electrical element, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.

Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.

Abstract: A front-end module (FEM) is disclosed that includes an integrous signal combiner. The integrous signal combiner can process received signals and use a set of resonant circuits to filter signal noise prior to recombination of a plurality of signal bands that form an aggregate carrier signal. These resonant circuits may be placed after a set of low noise amplifiers and can be used to more efficiently reduce noise and parasitic loading within each of a set of signal paths. Each resonant circuit may be configured to filter noise relating to a bandwidth for a signal that is to be combined with the signal of the signal path that includes the resonant circuit. In some implementations, the integrous signal combiner can be a tunable integrous signal combiner with resonant circuits that may be reconfigurable or dynamically configurable.

Abstract: Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

Abstract: Disclosed are various features associated with a securing mechanism for a wafer bonder. In certain situations, operation of securing mechanisms can generate undesirable particles and debris, and some them can be introduced to a wafer being bonded. In certain implementations, a securing mechanism can be configured to reduce the likelihood of such particles and debris being introduced to the wafer.

Abstract: A power amplifier that can support multiple communication networks while maintaining power efficiency across each of the supported communication networks is disclosed. In some implementations described herein, a power amplifier module includes a bypass circuit that enables different voltage supplies to be provided to the power amplifier. By regulating the voltage supply provided to the power amplifier, the power amplifier can support different communication networks while maintaining power efficiency across a dynamic frequency range. Moreover, embodiments herein may include a buck converter, or other form of DC-DC converter, that enables the power amplifier to operate with respect to multiple communication networks.

Abstract: Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

Abstract: A voltage converter can be switched among two or more modes to produce an output voltage tracking a reference voltage that can be of an intermediate level between discrete levels corresponding to the modes. One or more voltages generated from a power supply voltage, such as a battery voltage, can be compared with the reference voltage to determine whether to adjust the mode. The reference voltage can be independent of the power supply voltage. Further, the voltage converter may implement frequency modulation and a pulse skipping mode to improve the efficiency of switching operational states of the voltage converter.

Abstract: A low frequency loss correction circuit that improves the efficiency of a power amplifier at near-DC low frequencies The low frequency loss correction circuit can include a signal error detection circuit configured to produce an error signal in response to detecting one or more frequency components of a tracking signal below a cutoff frequency that are substantially attenuated through a capacitive path. The low frequency loss correction circuit can include a drive circuit configured to convert the error signal into a low frequency correction signal, and provide the low frequency correction signal to a voltage supply line, the low frequency correction signal including at least some of the one or more frequency components of the tracking signal below a cutoff frequency that are substantially attenuated through the capacitive path.