Patents Assigned to Solexel, Inc.
  • Publication number: 20120174860
    Abstract: A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102. The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.
    Type: Application
    Filed: January 9, 2012
    Publication date: July 12, 2012
    Applicant: SOLEXEL, INC.
    Inventor: Mehrdad Moslehi
  • Publication number: 20120178203
    Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.
    Type: Application
    Filed: December 30, 2011
    Publication date: July 12, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan
  • Publication number: 20120171804
    Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.
    Type: Application
    Filed: December 30, 2011
    Publication date: July 5, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
  • Publication number: 20120167819
    Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a substrate or template used in the manufacturing process of silicon solar cells. Further, methods are disclosed which provide for the conversion of a low quality starting surface into an improved quality starting surface of a silicon wafer.
    Type: Application
    Filed: December 31, 2011
    Publication date: July 5, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Karl-Josef Kramer, Mehrdad M. Moslehi, David Xuan-Qi Wang, Rahim Kavari, Rafael Ricolcol, Jay Ashjaee
  • Publication number: 20120145553
    Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
    Type: Application
    Filed: November 3, 2011
    Publication date: June 14, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Karl-Josef Kramer, Mehrdad M. Moslehi, Subramanian Tamilmani, George D. Kamian, Jay Ashjaee, Takao Yonehara
  • Patent number: 8193076
    Abstract: The present disclosure relates to methods and apparatuses template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin for releasing a thin semiconductor substrate from a reusable semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.
    Type: Grant
    Filed: June 29, 2010
    Date of Patent: June 5, 2012
    Assignee: Solexel, Inc.
    Inventors: Mehrdad M. Moslehi, David Xuan-Qi Wang, Sam Tone Tor, Karl-Josef Kramer
  • Publication number: 20120125256
    Abstract: Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
    Type: Application
    Filed: August 13, 2011
    Publication date: May 24, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Karl-Josef Kramer, Mehrdad M. Moslehi, David Xuan-Qi Wang, Subramanian Tamilmani, Sam Tone Tor, Rahim Kavari, Rafael Ricolcol, George Kamian, Joseph Leigh
  • Publication number: 20120122272
    Abstract: Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
    Type: Application
    Filed: October 11, 2011
    Publication date: May 17, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Virendra V. Rana, Pranav Anbalagan, Mehrdad M. Moslehi
  • Publication number: 20120103408
    Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
    Type: Application
    Filed: August 5, 2011
    Publication date: May 3, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, David Xuan-Qi Wang, Karl-Josef Kramer, Sean M. Seutter, Sam Tone Tor, Anthony Calcaterra
  • Patent number: 8168465
    Abstract: A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: May 1, 2012
    Assignee: Solexel, Inc.
    Inventors: David Xuan-Qi Wang, Mehrdad M. Moslehi
  • Publication number: 20120085278
    Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
    Type: Application
    Filed: June 9, 2011
    Publication date: April 12, 2012
    Applicant: SOLEXEL INC.
    Inventors: Mehrdad M. Moslehi, Karl-Josef Kramer, Jay Ashjaee, George D. Kamian, David Mordo, Takao Yonehara
  • Patent number: 8129822
    Abstract: A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102. The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.
    Type: Grant
    Filed: October 6, 2007
    Date of Patent: March 6, 2012
    Assignee: Solexel, Inc.
    Inventor: Mehrdad Moslehi
  • Publication number: 20120028399
    Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
    Type: Application
    Filed: May 27, 2011
    Publication date: February 2, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, Virendra V. Rana, JianJun Liang, Pranav Anbalagan
  • Publication number: 20120017988
    Abstract: A pyramidal three-dimensional thin-film solar cell, comprising a pyramidal three-dimensional thin-film solar cell substrate comprising a plurality of pyramid-shaped unit cells with emitter junction regions and doped base regions, emitter metallization regions and base metallization regions. Optionally, the pyramidal three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.
    Type: Application
    Filed: July 21, 2011
    Publication date: January 26, 2012
    Applicant: SOLEXEL INC.
    Inventor: Mehrdad M. Moslehi
  • Publication number: 20120017971
    Abstract: Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications.
    Type: Application
    Filed: July 20, 2011
    Publication date: January 26, 2012
    Applicant: SOLEXEL INC.
    Inventor: Mehrdad M. Moslehi
  • Publication number: 20120021560
    Abstract: The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.
    Type: Application
    Filed: July 28, 2011
    Publication date: January 26, 2012
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, David Xuan-Qi Wang
  • Publication number: 20120012160
    Abstract: Solar module structures and methods for assembling solar module structures. The solar module structures comprise pyramidal three-dimensional thin-film solar cells arranged in solar module structures. The pyramidal three-dimensional thin-film solar cell comprises a pyramidal three-dimensional thin-film solar cell substrate with emitter junction regions and doped base regions. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The three-dimensional thin-film solar cell substrate comprises a plurality of pyramid-shaped unit cells. The solar module structures may be used in solar glass applications, building façade applications, rooftop installation applications as well as for centralized solar electricity generation.
    Type: Application
    Filed: July 21, 2011
    Publication date: January 19, 2012
    Applicant: SOLEXEL INC.
    Inventor: Mehrdad M. Moslehi
  • Patent number: 8084684
    Abstract: A three-dimensional thin-film solar cell 100, comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions 522 and doped base regions 530, emitter metallization regions 525 and base metallization regions 532. Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.
    Type: Grant
    Filed: October 6, 2007
    Date of Patent: December 27, 2011
    Assignee: Solexel, Inc.
    Inventor: Mehrdad Moslehi
  • Publication number: 20110284068
    Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate-based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.
    Type: Application
    Filed: April 23, 2011
    Publication date: November 24, 2011
    Applicant: SOLEXEL, INC.
    Inventors: Mehrdad M. Moslehi, Karl-Josef Kramer, Anand Deshpande, Rafael Ricolcol, Sean M. Seutter
  • Publication number: 20110272013
    Abstract: A template for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template comprises a substrate which comprises a plurality of posts and a plurality of trenches between said plurality of posts. The template forms an environment for three-dimensional thin-film solar cell substrate formation.
    Type: Application
    Filed: May 3, 2011
    Publication date: November 10, 2011
    Applicant: Solexel, Inc.
    Inventor: Mehrdad M. Moslehi