Abstract: An anodizing apparatus for causing an anodizing reaction to substrates immersed in an electrolyte solution. The apparatus includes a storage tank for storing the electrolyte solution, a holder for holding a plurality of substrates in liquid-tight contact with circumferential surfaces of the substrates, a moving mechanism for moving the holder between a transfer position outside the storage tank and a treating position inside the storage tank, and a closing device disposed in the storage tank for cooperating with the holder to complete a liquid-tight closure of the circumferential surfaces of the substrates held by the holder. Chemical reaction treatment is carried out with the circumferential surfaces of the substrates placed in a liquid-tight state. After the chemical reaction treatment is completed, the closing device is made inoperative and the holder is moved away from the treating position to unload the substrates from the storage tank.

Abstract: In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.

Abstract: This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro-mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.

Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.

Abstract: A self-activated front surface bias for photovoltaic solar cell assembly is provided. The solar cell assembly comprises a front surface electrical bias activated by electrical energy generated by the solar cell assembly. The front surface bias improves generation efficiency for said solar cell assembly.

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The template has a shape such that the 3-D shape is substantially retained after each substrate release. Prior art reusable templates may have a tendency to change shape after each subsequent reuse; the present disclosure aims to address this and other deficiencies from the prior art, therefore increasing the reuse life of the template.

Abstract: A front contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In yet another embodiment, a back contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, base regions, and a front surface field are formed through ion implantation processes.

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract: A three-dimensional thin-film solar cell 100, comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions 522 and doped base regions 530, emitter metallization regions 525 and base metallization regions 532. Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.

Abstract: The present disclosure relates to methods and apparatuses for releasing a thin semiconductor substrate from a reusable template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.

Abstract: A three-dimensional solar cell comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity. A method for fabricating a three-dimensional thin-film solar cell from an inverted pyramidal three-dimensional thin-film silicon substrate by doping ridges on the surface of the semiconductor substrate which define an opening of an inverted pyramidal cavity on the substrate to form an emitter region, and doping a region which forms the apex of the inverted pyramidal cavity to form a base region. Adding a surface passivation layer to the surface of the substrate. Selectively etching the passivation layer from the emitter region and base region. Then concurrently metallizing the emitter region and base region.

Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.

Abstract: A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three-dimensional thin-film semiconductor substrate from the semiconductor template.

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract: This disclosure enables gas recovery and utilization for use in deposition systems and processes. The system includes a thin-film semiconductor layer deposition system comprising a deposition reactor, precursor gas feeds, and a gas recovery system.

Abstract: A three-dimensional thin-film solar cell 100, comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions 522 and doped base regions 530, emitter metallization regions 525 and base metallization regions 532. Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.

Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.