Abstract: A semiconductor device having high operation reliability that includes a semiconductor substrate, a light receiving section, a multiplier, a first electrode, a second electrode, and a resistor. The semiconductor substrate includes a pixel array section in which a plurality of pixels is disposed in an array. The light receiving section is inside the semiconductor substrate for each of the pixels, and generates carriers according to quantities of received light. The multiplier on a first surface of the semiconductor substrate for each of the pixels has a laminated structure of first and second conductivity type regions, and avalanche-multiplies the carriers generated in the light receiving section. The first electrode is electrically coupled to the multiplier. The second electrode is electrically coupled to the light receiving section. The resistor includes a polycrystalline semiconductor material and is in contact with the first electrode, while facing the first surface.

Abstract: A photodetector that makes it possible to attempt to improve optical characteristics in terms of oblique incidence of light at angle-of-view ends is provided. A photodetector includes multiple pixels arranged in a matrix on a semiconductor substrate. Each of the multiple pixels includes a photoelectric converting section that photo-electrically converts incident light, and a deflecting section that is arranged on a light-incidence-surface side of the photoelectric converting section, and has multiple pillars with different thicknesses, pitches, or shapes in the pixel. The pillars guide an incident principal ray that is incident at a different angle for each image height to the photoelectric converting section at a prism angle at which light is bent relative to the principal ray differently for each pixel.

Abstract: Collapses of pillars are suppressed. An optical detecting device includes a pixel array section having multiple pixels that are arranged two-dimensionally therein. Further, each pixel of the multiple pixels includes a photoelectric converting section provided on a semiconductor layer and a metasurface structure that is arranged on a light incidence surface side of the semiconductor layer and that guides incident light to the photoelectric converting section. Moreover, the metasurface structure includes multiple pillars that are arranged at distances therebetween which are shorter than a wavelength of the incident light and a transparent support that connects and supports at least some of the multiple pillars.

Abstract: The present technology relates to a light receiving element, a distance measurement module, and an electronic device that enable signal degradation during charge transfer to be reduced. The light receiving element includes a pixel at least including: a first charge holding unit and a second charge holding unit each of which holds an electric charge generated by a photodiode; a first transfer transistor that transfers the electric charge to the first charge holding unit; and a second transfer transistor that transfers the electric charge to the second charge holding unit, in which the first and second transfer transistors each include a vertical transistor including a vertical gate electrode portion. The present technology can be applied to, for example, a light receiving element that performs distance measurement by an indirect ToF method, and the like.

Abstract: A solid-state imaging element including a semiconductor substrate having a photodiode and a floating diffusion; a capacitor that includes a PD side electrode disposed on a surface of the photodiode opposite to a surface into which the light enters, and an opposite PD side electrode facing the PD side electrode with a dielectric film therebetween; an amplification transistor; and an FD side wiring electrode. At least a part of the PD side electrode and the FD side wiring electrode are formed in the semiconductor substrate and extend in a thickness direction of the semiconductor substrate. One end of a first contact hole in which at least a part of the PD side electrode is formed and one end of a second contact hole in which the FD side wiring electrode is formed are both positioned in a surface of the semiconductor substrate on a side opposite to the photodiode side.

Abstract: The present technology relates to an information processing apparatus, an information processing method, a program, a mobile-object control apparatus, and a mobile object that make it possible to improve the accuracy in recognizing a target object. An information processing apparatus includes a geometric transformation section that transforms at least one of a captured image or a sensor image to match coordinate systems of the captured image and the sensor image, the captured image being obtained by an image sensor, the sensor image indicating a sensing result of a sensor of which a sensing range at least partially overlaps a sensing range of the image sensor; and an object recognition section that performs processing of recognizing a target object on the basis of the captured image and sensor image of which the coordinate systems have been matched to each other. The present technology is applicable to, for example, a system used to recognize a target object around a vehicle.

Abstract: The present technology relates to a light receiving element and a ranging system to reduce power consumption. A light receiving element includes a pixel which includes an SPAD, a first transistor configured to set a cathode voltage of the SPAD at a first negative voltage, a voltage conversion circuit configured to convert the cathode voltage of the SPAD upon incidence of a photon and output the converted cathode voltage, and an output unit configured to output a detection signal indicating the incidence of the photon on the SPAD on the basis of the converted cathode voltage. The present technology is applicable to a ranging system that detects a range in a depth direction to a subject, for example.

Abstract: An information processing apparatus comprising, at least one first processor configured to carry out a first process on data input from at least one sensor to produce first processed data, a selector configured to select, according to a first predetermined condition, at least one of a plurality of second processes, and at least one second processor configured to receive the first processed data from the at least one first processor and to carry out the selected at least one of the plurality of second processes on the first processed data to produce second processed data, each of the plurality of second processes having a lower processing load than the first process.

Abstract: Provided are an apparatus and a method for generating a two-dimensional map or a surround-view image in which an object with low position reliability is set as an enlarged display object. A data processing section configured to receive an image captured by a camera that captures the image of surroundings of a vehicle and generate a two-dimensional map including objects in the surroundings of the vehicle is included. The data processing section generates the two-dimensional map or a surround-view image including an enlarged display object having an enlarged region set thereto, the enlarged region which, in case of an object with low position reliability, extends around the object.

Abstract: An information processing apparatus includes an acquisition unit that acquires first position information indicating a position of a target object in a target region and a generation unit that generates, on the basis of the first position information, second position information including area mesh information that indicates a target area mesh containing the target object and included in plural area meshes produced by dividing the target region in a first direction and a second direction such that a division number in the second direction varies for each position in the first direction in the target region and relative position information that indicates a position of the target object in the target area mesh. The present technology is applicable to a transmission device and a reception device.

Abstract: A semiconductor apparatus and electronic equipment are provided that allow improvement of bondability between a first electrode section and a second electrode section. A semiconductor apparatus includes a first interconnect section, a first interlayer insulating film covering one surface side of the first interconnect section, a first electrode section in a first through-hole in the first interlayer insulating film and electrically connected to the first interconnect section, a second interconnect section, a second interlayer insulating film covering a surface side of the second interconnect section facing the first interconnect section, and a second electrode section in a second through-hole in the second interlayer insulating film and electrically connected to the second interconnect section. The first electrode section and the second electrode section are directly bonded to each other. The first electrode section has a larger coefficient of thermal expansion than that of the first interconnect section.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion.

Abstract: Provided is a communication device which includes a communication section that receives, via a transceiving antenna, a reference signal to be transmitted from a base station, a measurement section that measures a reception-signal level on a basis of the reference signal received by the communication section, and a decision section that decides at least one of a transmission power or a number of times of transmission for starting random access to the base station, on a basis of the reception-signal level measured by the measurement section, and a difference between a gain in a reception frequency band of the transceiving antenna and a gain in a transmission frequency band of the transceiving antenna.

Abstract: A photodetection device according to the present disclosure includes: a pixel; a reference signal generation unit; a comparison circuit; and a first switch. The pixel is configured to generate a pixel signal. The reference signal generation unit is configured to generate a reference signal. The comparison circuit includes a first-stage amplifier circuit and a second-stage amplifier circuit that is coupled to the first-stage amplifier circuit through a connection node. The first-stage amplifier circuit is configured to output a first output signal corresponding to a comparison operation based on the pixel signal and the reference signal. The second-stage amplifier circuit is configured to output a second output signal corresponding to the first output signal outputted from the first-stage amplifier circuit through the connection node. The first switch has one end and another end. The one end is coupled to the connection node. The first switch allows impedance and a voltage at the connection node to change.

Abstract: Color accuracy in an imaging device is improved. An imaging element includes a plurality of pixels that acquires first information that is information of three primary colors and second information that is information of at least two colors different from the three primary colors and that includes at least one of complementary colors of the three primary colors.

Abstract: In a solid-state imaging element provided with a comparator for each column, responsiveness of the comparator is improved. An input transistor outputs, from a drain, a potential within a range from one side to the other side of a pair of output potentials on the basis of whether or not an input potential input to a source and a predetermined reference potential input to a gate substantially coincide with each other. A first current source supplies a constant current. A capacitor is inserted between the source of the input transistor and a first current source. A cutoff switch disconnects a drain of the input transistor from a connection node within a predetermined period for initializing the connection node between the capacitor and the first current source to a lower one of the pair of output potentials, and connects the connection node with the drain of the input transistor outside the predetermined period.

Abstract: An imaging device according to the present disclosure includes the plurality of normal pixels arranged in a matrix, the special pixel arranged by replacing a part of the normal pixels, the color filter corresponding to the normal pixels and arranged according to a predetermined rule, the special filter arranged corresponding to the special pixel, and the special pixel color filter arranged to surround at least a part of the periphery of the special filter.

Abstract: A PLL circuit for generating a modulated carrier signal includes a digitally controlled oscillator (DCO) to generate the modulated signal. The PLL circuit receives a desired phase change as a modulation signal at each cycle of a non-uniform clock, derived from the a DCO output and a uniform reference clock. This phase change adjusts the DCO's frequency. The circuit also receives a frequency control word, representing the ratio of the desired carrier frequency to the reference clock frequency. The phase change and frequency control word are accumulated to predict the DCO's output phase. A non-uniform clock compensation circuit calculates a compensation value for the phase change. A phase detector estimates the error between the predicted phase and the time offset between the reference clock and DCO output, generating a control signal for the DCO based on this error.

Abstract: A solid-state imaging element includes: a photoelectric conversion unit that performs photoelectric conversion; and a color filter that is formed on a light incident side of the photoelectric conversion unit and selectively transmits light received by the photoelectric conversion unit, in which a void and a light shielding film on the light incident side of the void are formed between a plurality of the color filters.