Patents Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION
  • Publication number: 20220146673
    Abstract: A time-of-flight device has a light source configured to emit light pulses to a scene, a light detector configured to detect light reflected from the scene and a control, the control being configured to drive the light source to emit pulse density modulated light pulses representing a predefined light waveform, drive the light detector to detect the pulse density modulated light pulses, based on a demodulation time interval and reconstruct the predefined light waveform, based on the detected density modulated light pulses.
    Type: Application
    Filed: February 14, 2020
    Publication date: May 12, 2022
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Qing Ding, Alper Ercan
  • Publication number: 20220150427
    Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.
    Type: Application
    Filed: January 24, 2022
    Publication date: May 12, 2022
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Pooria Mostafalu, Frederick Brady
  • Publication number: 20220150714
    Abstract: A communication device includes an acquisition unit configured to acquire first information for communication in which a first frequency band has been used, the first frequency band being an unlicensed band in which a plurality of communication schemes can be mixed, from a second frequency band different from the first frequency band, and a communication control unit configured to control communication in a predetermined communication scheme in which the first frequency band has been used, on the basis of the first information.
    Type: Application
    Filed: February 3, 2020
    Publication date: May 12, 2022
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Yusuke YONEYAMA, Toshihiro FUJIKI, Katsuyuki TANAKA, Seiji KOBAYASHI
  • Publication number: 20220149235
    Abstract: A first semiconductor device of an embodiment of the present disclosure includes: a semiconductor substrate having one surface and another surface opposed to each other, and having a side length of 50 ?m or more and 500 ?m or less; a single or multiple bumps provided on the other surface; and a projection-and-depression structure formed in a side surface of the semiconductor substrate.
    Type: Application
    Filed: February 7, 2020
    Publication date: May 12, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Tatehito KOBAYASHI
  • Publication number: 20220149093
    Abstract: Provided is a semiconductor device that includes a semiconductor layer, a channel region, first and second main electrode regions, a gate insulating film, and a gate electrode. The first and second main electrode regions are on opposing ends of the channel region. The gate insulating film is disposed on the inner walls of first and second trenches and on the upper surface of the channel region. The gate electrode includes a first protruding section, a second protruding section, and a horizontal section. The first protruding section and the second protruding section are embedded in first and second trenches respectively. The horizontal section is connected to the upper ends of the first and second protruding sections and disposed on the upper surface of the channel region. The depth of the first and second main electrode regions is equal to or greater than the depth of the first and second protruding sections.
    Type: Application
    Filed: January 24, 2020
    Publication date: May 12, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Naohiko KIMIZUKA, Toyotaka KATAOKA, Yoshiharu KUDOH
  • Publication number: 20220150431
    Abstract: An imaging device is provided which allows an increase in the degree of freedom of its layout. The imaging device includes a first semiconductor substrate including a sensor pixel for performing photoelectric conversion, and a second semiconductor substrate including a readout circuit for outputting a pixel signal according to an electric charge output from the sensor pixel. The second semiconductor substrate is laminated on the one surface side of the first semiconductor substrate so as to configure a laminated body. The second semiconductor substrate includes a first surface facing the first semiconductor substrate, and a second surface located opposite to the first surface. The first transistor included in the readout circuit is disposed in the first surface, and the second transistor included in the readout circuit is disposed in the second surface.
    Type: Application
    Filed: March 12, 2020
    Publication date: May 12, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Toshihiro KUROBE
  • Publication number: 20220149090
    Abstract: The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.
    Type: Application
    Filed: January 19, 2022
    Publication date: May 12, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke OTAKE, Toshifumi WAKANO
  • Patent number: 11329002
    Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Teruyuki Sato, Shinichi Arakawa, Takayuki Enomoto, Yohei Chiba
  • Patent number: 11328070
    Abstract: The present technology relates to a signal processing device, and a signal processing method for enabling reduction of a processing load while ensuring safety. The signal processing device includes a control unit that acquires designation information indicating a designated portion to be encrypted in output data and an encryption processing unit that encrypts the designated portion indicated by the designation information in the output data using a key. Furthermore, the designated portion indicated by the designation information is changed with time. The present technology can be applied to an in-vehicle camera.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Tatsuya Kaneko, Motohashi Yuichi
  • Patent number: 11329077
    Abstract: The present technology relates to a semiconductor device, a solid-state imaging device, and electronic equipment, which are able to suppress increase of resistivity to a high level at a connection portion between an ESV and a wiring layer and to improve reliability of an electric connection using an ESV. The semiconductor device according to the present technology has a plurality of semiconductor substrates layered, and includes a through electrode penetrating a silicon layer of the semiconductor substrates, a wiring layer formed inside the semiconductor substrates, and a through electrode reception part. The through electrode reception part is connected to the wiring layer, in which the through electrode has a width smaller than the through electrode reception part, and the through electrode is electrically connected to the wiring layer via the through electrode reception part. The present technology is applicable, for example, to a CMOS image sensor.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoshiya Hagimoto
  • Patent number: 11328655
    Abstract: A display apparatus according to an embodiment of the present disclosure includes: a display panel including a plurality of pixels; and a drive device that outputs a driving signal to the display panel. The driving signal causes one of the pixels to emit light many times by an active PWM drive method in a 1-frame period.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: May 10, 2022
    Assignees: Sony Semiconductor Solutions Corporation, Sony Corporation
    Inventors: Takaaki Sugiyama, Ken Kikuchi, Atsushi Yasuda, Hirokazu Imai, Hiroshi Tobita
  • Patent number: 11328643
    Abstract: A display unit of the present disclosure includes one or more display devices that perform image display by making a difference in resolution for each of a plurality of image regions in an original image, and an optical device that corrects optically for distortion of a display image that is caused by performing the image display at the different resolution for each of the plurality of image regions, a position of the image display between the plurality of image regions, or both.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Osamu Akimoto
  • Patent number: 11329092
    Abstract: The present disclosure relates to a semiconductor device, a manufacturing method of the semiconductor device, and electronic equipment that are directed to improving quality and reliability of a semiconductor device including a through electrode, or electronic equipment. The semiconductor device includes a first semiconductor substrate including a through electrode, a first insulating film laminated on a first surface of the first semiconductor substrate, and a second insulating film laminated on the first insulating film, in which an inner wall and a bottom surface of the through electrode are covered with a conductor, the first insulating film and the second insulating film are laminated on the conductor, and the through electrode includes a groove which reaches the first insulating film on the bottom surface from the first surface of the first semiconductor substrate. The present technology may be applied to a packaged solid-state imaging device or the like, for example.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Tomohiro Sugiyama
  • Patent number: 11330212
    Abstract: An imaging device according to the present disclosure includes a plurality of pixels each including a first light-receiving element and a second light-receiving element, the plurality of pixels including a first pixel. The imaging device further includes a generating section that generates a first detection value on a basis of a light-receiving result by the first light-receiving element of each of the plurality of pixels, and generates a second detection value on a basis of a light-receiving result by the second light-receiving element of each of the plurality of pixels. The imaging device further includes a diagnosis section that performs a diagnosis processing on a basis of a detection ratio that is a ratio between the first detection value and the second detection value in the first pixel.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Naoki Kawazu, Keita Sasaki, Takumi Oka, Mohammad Munirul Haque, Yuichi Motohashi, Atsushi Suzuki
  • Patent number: 11329084
    Abstract: An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshifumi Zaizen, Shunsuke Maruyama
  • Patent number: 11330209
    Abstract: The present technology relates to an imaging device and an electronic device that enable highly accurate adjustment of a focus position and a camera shake correction position. The device includes: a lens that focuses subject light; an imaging element that photoelectrically converts the subject light from the lens; a circuit substrate including a circuit that externally outputs a signal from the imaging element; an actuator that drives the lens with a Pulse Width Modulation (PWM) waveform in at least one of an X-axis direction, a Y-axis direction, or a Z-axis direction; and a detection unit that detects a magnetic field generated by a coil included in the actuator. The actuator drives the lens to move a focus, or drives the lens to reduce an influence of camera shake. The present technology can be applied to the imaging device.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Katsuji Kimura, Rei Takamori, Hirokazu Seki
  • Patent number: 11330203
    Abstract: The present technology relates to an imaging device and an electronic device which enable image capturing based on the global shutter system, without reducing the amount of saturated signal charge. Pixels each including a photoelectric conversion unit that converts light received thereon into electric charge, and a holding unit that holds the electric charge transferred from the photoelectric conversion unit, a floating diffusion that is shared among a plurality of the pixels, and that holds the electric charge transferred from the holding unit, and a boost line through which the floating diffusion is boosted are included. The present technology is applicable, for example, to an imaging device to capture images on the basis of a global shutter system.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshimichi Kumagai, Takashi Abe, Ryoto Yoshita, Ryo Fukui
  • Patent number: 11330211
    Abstract: An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. Each image sensing pixel includes a photoelectric conversion element and an imaging signal generation readout circuit. The image sensing readout circuit can be shared by a plurality of photoelectric conversion elements. Each event detection pixel includes a photoelectric conversion element and an event detection readout circuit. The event detection readout circuit can be shared by a plurality of photoelectric conversion elements. In addition, the photoelectric conversion element of an event detection pixel can be selectively connected to a shared imaging signal generation readout circuit. The number of image sensing pixels is greater than the number of event detection pixels. In addition, the area of a photoelectric conversion element of an event detection pixel can be greater than the area of a photoelectric conversion element of an image sensing pixel.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: May 10, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Giri Mehta, Pooria Mostafalu, Frederick Brady, Ping Wah Wong
  • Patent number: 11330158
    Abstract: Pixel formation in an imaging element configured to detect image plane phase difference is simplified. The imaging element includes an on-chip lens, a plurality of photoelectric conversion portions, and a plurality of waveguides. The on-chip lens concentrates incident light on a pixel and is placed on each pixel so as to be shifted from a center of the pixel according to an incident angle of the incident light. The plurality of photoelectric conversion portions is arranged in the pixel and performs photoelectric conversion according to the incident light. The plurality of waveguides is arranged for the plurality of respective photoelectric conversion portion in the pixel. The plurality of waveguides guide the incident light concentrated so that the incident light enters each of the plurality of photoelectric conversion portion, and are formed into shapes dissimilar to each other based on the shift of the on-chip lens.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: May 10, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Toshiki Sakamoto
  • Patent number: 11330177
    Abstract: An apparatus and a method for generating a high-quality one point color image are provided. A composite image generation unit that generates a composite image by executing composition processing using a color image and a monochrome image captured from different viewpoints, and an output image generation unit that generates a one point color image in which only a partial area of the image is colored are included. The output image generation unit generates a one point color image in which a colorization area in the one point color image is set as an area to which pixel values of the composite image are output, and a non-colorization area is set as an area to which pixel values of the monochrome image are output. The colorization area is selected by either user selection or automatic selection. For example, user-specified area information, subject distance information, and the like are used for the execution.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: May 10, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Takanobu Kobashiri