Abstract: An imaging device according to the present disclosure includes the plurality of normal pixels arranged in a matrix, the special pixel arranged by replacing a part of the normal pixels, the color filter corresponding to the normal pixels and arranged according to a predetermined rule, the special filter arranged corresponding to the special pixel, and the special pixel color filter arranged to surround at least a part of the periphery of the special filter.

Abstract: A solid-state imaging device is provided that enables miniaturization of a pixel and improvement in electrical properties of a transistor of a pixel circuit. The solid-state imaging device includes a first semiconductor layer and a second semiconductor layer. In the first semiconductor layer, a pixel including a photoelectric converter is arranged in a matrix along a plane direction. The number of the pixel is two or more. The second semiconductor layer is stacked on the first semiconductor layer on an opposite side to a light-incoming side of the pixel. In the second semiconductor layer, a first transistor electrically coupled to the pixel is provided. A gate lengthwise direction of the first transistor is inclined with respect to an arrangement direction of the pixel.

Abstract: An imaging sensor according to an embodiment includes a pixel (100b) including a first light receiving element (20L) and a second light receiving element (20S) that generate and accumulate photocharges through photoelectric conversion according to received light, and an interpixel capacitance that accumulates photocharges overflowed from the first light receiving element and the second light receiving element during an exposure period. The second light receiving element has a sensitivity to light lower than a sensitivity to light of the first light receiving element.

Abstract: An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code.

Abstract: An image sensor assembly includes a pixel circuit including a charge storage structure and an amplification transistor. A load path of the amplification transistor is between an amplifier drain line and a pixel output node. A potential at a storage node of the charge storage structure controls the amplification transistor. An amplifier drain circuit is configured to pass a low potential to the amplifier drain line in a reset period and a high potential in a readout period. A transition from the low potential to the high potential is not before an end of the reset period and prior to a start of the readout period.

Abstract: A row driver assembly includes a row driver unit. The row driver unit includes a buffer circuit that drives a control signal to a pixel circuit. The buffer circuit is electrically connected to a high buffer supply voltage and to a low buffer supply voltage. A voltage converter circuit supplies the low buffer supply voltage to the buffer circuit. An error detection circuit outputs an active error signal when the low buffer supply voltage is outside a target voltage window.

Abstract: Wavelength determining image sensors and systems are provided. A sensor as disclosed includes a number of pixels disposed within an array, each of which includes a plurality of sub-pixels. Each wavelength sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Wavelength information regarding light incident on a pixel is determined by applying ratios of signals obtained from pairs of included sub-pixels and calibrated ratios for different wavelengths to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated wavelengths to the incident light.

Abstract: Color image sensors and systems are provided. A sensor as disclosed includes a plurality of color sensing pixels disposed within an array, each of which includes a plurality of sub-pixels. Each color sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Color information regarding light incident on a pixel is determined by applying ratios of signals obtained by pairs of included sub-pixels and calibrated ratios for different colors to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated colors to the incident light.

Abstract: An imaging device in which noise can be reduced, and an electronic device using this device. The imaging device includes a light receiving element, and a read circuit. A field effect transistor in the read circuit has a semiconductor layer in which a channel is formed, a gate electrode that covers the semiconductor layer, and a gate insulating film disposed between the semiconductor layer and the gate electrode. The semiconductor layer has a main surface, and a first side surface on one end side of the main surface in a gate width direction of the field effect transistor. The gate electrode has a first portion that faces the main surface via the gate insulating film, and a second portion that faces the first side surface via the gate insulating film. A crystal plane of the first side surface is a plane or a plane equivalent to the plane.

Abstract: The present technology relates to a semiconductor device and an imaging device capable of efficiently dissipating heat generated in a semiconductor package including a resin. A first substrate, a second substrate, a wiring layer that is located between the first substrate and the second substrate, and a slit that penetrates the first substrate and reaches the wiring layer are provided. The gap is provided for each wiring provided in the wiring layer. The present technology can be applied to, for example, a semiconductor device in which a chip on which an imaging element is formed and a chip that processes a signal from the imaging element are stacked.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.

Abstract: An information processing apparatus and an information processing method to properly acquire a location of a surrounding vehicle using three-dimensional detection information regarding an object around an own vehicle. A camera captures an image of surroundings of an own automobile, and a region of a vehicle in the captured image is detected as a frame, the vehicle being in the surroundings of the own automobile. Three-dimensional information regarding an object in the surroundings of the own automobile is detected, and a three-dimensional box that indicates a location of the vehicle in the surroundings of the own automobile is generated on the basis of the three-dimensional information. Correction is performed on the three-dimensional box on the basis of the frame, and the three-dimensional box is arranged to generate surrounding information.

Abstract: [Object] It is possible to further improve reliability. [Solution] There is provided a display device including: a pixel unit which is configured with a plurality of pixel circuits arranged in a matrix, each of the pixel circuits including a light emitting element and a driving circuit for driving the light emitting element; scanning lines which are interconnections connected to the respective pixel circuits and are provided to extend in a first direction and correspond to respective rows of a plurality of the pixel circuits; and signal lines which are interconnections connected to the respective pixel circuits and are provided to extend in a second direction orthogonal to the first direction and correspond to respective columns of a plurality of the pixel circuits. One of the scanning lines and the signal lines, provided for the one pixel circuit, which is larger in number is positioned in a lower-level interconnection layer.

Abstract: The present invention relates to a semiconductor device and an electronic device that facilitate calibration and can obtain favorable characteristics. The semiconductor device includes a substrate, a millimeter wave antenna provided on the substrate, and an image sensor provided on the substrate, in which an antenna surface of the millimeter wave antenna and a light receiving surface of the image sensor are disposed at spatially partitioned positions. The present technology can be applied to a sensor module.

Abstract: There is provided an information processing device that processes detection information of an external recognition sensor. The information processing device includes: a recognition unit that performs recognition processing on an object on the basis of a detection signal of the sensor; and a processing unit that performs fusion processing on first data before the recognition by the recognition unit and another data. The information processing device further includes a second recognition unit that performs recognition processing on the object on the basis of a detection signal of a second sensor. The processing unit performs fusion processing on third data before the recognition by the second recognition unit and the first data, fusion processing on fourth data after the recognition by the second recognition unit and the first data, and the like.

Abstract: A semiconductor device that can be manufactured with higher accuracy and higher yield without the need of a complicated process, a method for manufacturing a semiconductor device, and an electronic device including the semiconductor device are disclosed. A configuration includes: a first package including a die of an integrated circuit, a protective film on an upper surface of the die, the protective film being larger in area than the die, a first molding material covering an outer periphery of the die, a plurality of through mold vias penetrating the first molding material and the protective film, a seed layer on upper end portions and peripheral side surfaces of the through mold vias, and an external connection terminal connected to lower end portions of the through mold vias; and a second package on an upper surface of the protective film of the first package and connected to the upper end portions of the through mold vias.

Abstract: Technology advantageous for acquiring a high-quality image with a small device configuration is provided. An imaging element includes: a pixel substrate including an image sensor; a cover body facing the image sensor, the cover body being transmissive; a diffractive lens having a plurality of protruding lens portions protruding from the cover body toward the image sensor, in which a space is provided between the plurality of protruding lens portions.

Abstract: Provided is an imaging device capable of further suppressing color mixing between pixels. The imaging device includes: a semiconductor substrate provided with a photoelectric conversion unit for each of pixels two-dimensionally arranged; a color filter provided for each of the pixels on the semiconductor substrate; an intermediate layer provided between the semiconductor substrate and the color filter; and a low refraction region provided between the pixels by separating at least the color filter and the intermediate layer for each of the pixels, the low refraction region having a refractive index lower than a refractive index of the color filter.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.