Abstract: Provided are an imaging device capable of preventing a decrease in quantum efficiency, and an electronic apparatus using this imaging device. The imaging device of the present disclosure includes multiple photoelectric conversion sections provided for respective pixels and each having a first end portion on a light incident side and a second end portion on a side opposite to the first end portion, a first member disposed along a boundary of each of the multiple photoelectric conversion sections in a first direction that extends from the first end portion to the second end portion, and a second member provided between each of the multiple photoelectric conversion sections and the first member and at the first end portion, the second member containing a material with a lower refractive index than that of the photoelectric conversion sections.

Abstract: The present technology relates to a camera module, an image capturing method, and an electronic device which enable reduction of a memory capacity required for electronic image stabilization. The camera module includes: an imaging unit that outputs a captured image for each of image blocks each corresponding to a predetermined number of horizontal lines; an image block storage unit that stores the image blocks; and an image correction unit that performs image stabilization for each of the image blocks. The present technology can be applied to, for example, a digital video camera having an electronic image stabilization function.

Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line another wiring layer.

Abstract: Provided is a magnetoresistance effect element configured by laminating a first electrode, a magnetization pinned layer having a fixed magnetization direction, a first insulating layer, a magnetization free layer having a variable magnetization direction, a second insulating layer, and a second electrode in order, in which the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer, at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and either the non-magnetic layer or the magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

Abstract: An information processing device and an information processing method capable of reducing an information processing amount of an application processor that recognizes a subject from an input image are provided. An information processing device according to the present disclosure includes an acquisition unit, a generation unit, and an output unit. From an imaging unit that captures an image and generates image data, the acquisition unit acquires the image data. The generation unit generates, from the image data acquired by the acquisition unit, metadata to assist an application processor that executes processing related to the image. The output unit outputs the metadata generated by the generation unit to the application processor.

Abstract: A cable includes a first shield portion that includes at least one or more lines for transmitting a signal or electric power and that is provided on the outer side of the lines, a first layer that is provided in such a manner as to cover an outer circumference of the first shield portion and that includes a member that absorbs radio waves, a second shield portion that is provided on an outer side of the first layer, a second layer that is provided in such a manner as to cover an outer circumference of the second shield portion and that includes a member that absorbs radio waves, and insulating resin that covers an outer side of the second layer.

Abstract: A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Abstract: An antenna device and a wireless communication apparatus capable of improving performance are provided. The antenna device includes a first antenna element and a second antenna element disposed on the side of one surface of the first antenna element. The first antenna element includes a first glass substrate and a first patch antenna provided on the first glass substrate. The second antenna element includes a second glass substrate and a second patch antenna provided on the second glass substrate. The shape of at least one of the first patch antenna and the second patch antenna in a plan view is a rectangle. Contours of one or more of four corners of the rectangle include a curved line or a plurality of obtuse angles in a plan view.

Abstract: Provided is an imaging device including a light reception section that includes a plurality of pixels each performing photoelectric conversion and a plurality of on-chip lenses that is provided on a light incident side of the light reception section at a pitch less than a length of a wavelength on a longest wavelength side of a wavelength region of light to be received by the light reception section. The imaging device further includes a transparent substrate that is provided on a light incident side of the on-chip lenses.

Abstract: An imaging device including: pixel area and a peripheral area that lies outside the pixel area; light receiving element provided in the pixel area; circuit board provided in the pixel area and the peripheral area, the circuit board including a semiconductor substrate and a multilayer wiring layer, the multilayer wiring layer being provided between the semiconductor substrate and the light receiving element; first wiring line provided in the multilayer wiring layer, the first wiring line being electrically coupled to the light receiving element; a protective member that is opposed to the circuit board, the protective member and the circuit board sandwiching the light receiving element; and an extended wiring section provided between the semiconductor substrate and the protective member in the peripheral area, one end of the extended wiring section being open and another end of the extended wiring section being electrically coupled to the first wiring line.

Abstract: A solid-state imaging device is provided that includes a first substrate including at least a first electrode, a first modification layer, a first low-permittivity layer formed on the first modification layer, and a first joint surface where the first electrode and the first modification layer are exposed; and a second substrate including at least a second electrode, a second modification layer, a second low-permittivity layer formed on the second modification layer, and a second joint surface where the second electrode and the second modification layer are exposed. The first modification layer has higher hydrophilicity than the first low-permittivity layer. The second modification layer has higher hydrophilicity than the second low-permittivity layer. The first substrate and the second substrate form a laminate structure and are electrically connected by bonding the first joint surface and the second joint surface.

Abstract: In a device that measures biopotentials of cells in a solution, the solution is controlled at a constant temperature. A measurement device includes a substrate, a sensing control circuit, a temperature sensor, a front surface side heat radiating unit, a back surface side heat radiating unit, and a temperature control unit. A plurality of electrodes each detecting a potential in the solution is arranged on the front surface of the substrate. The sensing control circuit is arranged on the substrate and controls detection of potentials at the plurality of electrodes. The temperature sensor is arranged on the substrate and detects a temperature of the solution. The front surface side heat radiating unit is arranged on the front surface side of the substrate and radiates heat. The back surface side heat radiating unit is arranged on the back surface side that is a surface different from the front surface of the substrate, and radiates heat.

Abstract: The present technology relates to an imaging element and an electronic apparatus which make it possible to acquire a variety of information regarding a subject including polarization information. Included are an organic photoelectric conversion film that has a light-transmitting property, is oriented in a predetermined axial direction, and includes a step; an upper electrode arranged on a light incident surface side of the organic photoelectric conversion film; and a lower electrode arranged on a side of the organic photoelectric conversion film facing the upper electrode. Protrusions and recesses are formed on the light incident surface side of the organic photoelectric conversion film. An accumulation layer that accumulates an electric charge converted by the organic photoelectric conversion film is included between the organic photoelectric conversion film and the lower electrode, and the step is formed depending on the presence or absence of the accumulation layer.

Abstract: A semiconductor device according to the present disclosure includes: a first output terminal and a second output terminal; a first driver that has a first positive terminal coupled to the first output terminal and a first negative terminal coupled to the second output terminal, and outputs a differential signal corresponding to a first signal from the first positive terminal and the first negative terminal; and a second driver that has a second positive terminal coupled to the second output terminal and a second negative terminal coupled to the first output terminal, and outputs a differential signal corresponding to the first signal from the second positive terminal and the second negative terminal.

Abstract: Provided is a solid-state imaging device capable of further improving reliability of a solid-state imaging device and further reducing manufacturing cost. Provided is a solid-state imaging device including a second semiconductor substrate provided with a photoelectric conversion unit and a second element, a second insulating layer, a first semiconductor substrate provided with a first element, and a first insulating layer arranged in this order from a light incident side, and including a groove formed on the first semiconductor substrate, in which the groove has a first side wall and a second side wall, and a part of at least one side wall of the first side wall or the second side wall extends in an oblique direction with respect to a surface of the first semiconductor substrate on the light incident side.

Abstract: A display device includes: a first substrate that includes a semiconductor material layer in which a transistor has been formed, the transistor driving a light-emitting part that is included in a pixel; and a second substrate that includes a predetermined circuit. The first substrate and the second substrate are stuck together in such a way that respective joint surfaces face each other. A pad opening is provided from a side of the first substrate to face a pad electrode that has been provided on a side of the respective joint surfaces, in such a way that the pad electrode is exposed on a bottom surface.

Abstract: An imaging device (1) according to the present disclosure includes a plurality of image sensors (sensors 11, 12, 13, and 14) that output detection results to a processing device by sharing one signal line. At least one of the image sensors (sensors 11, 12, 13, and 14) includes an imaging unit (21), a recognition unit (23), and an output unit (25). The imaging unit (21) captures an image to generate image data. The recognition unit (23) recognizes a predetermined target object from the image data. The output unit (25) outputs the recognition result of the recognition unit (23) to the processing device in a period that does not overlap with a period in which the detection result of each of other image sensors is output using the signal line in one frame period in which the imaging unit (21) captures one image.

Abstract: A light source device including a light emitting unit in which multiple light emitting elements including vertical cavity surface emitting lasers are arranged is intended to curb temperature rise. A light source device according to the present technology includes a light emitting unit in which multiple light emitting elements including vertical cavity surface emitting lasers are arranged, and a driving unit that, regarding the light emitting element in the light emitting unit, causes multiple light emitting elements to be caused to emit light in a light emission target period to emit light in a time-divided manner in the light emission target period. By adopting time-division light emission, the number of light emitting elements that are caused to emit light simultaneously is reduced.

Abstract: An imaging apparatus including (A) an imaging lens; and (B) an image sensor array in which a plurality of image sensor units are arrayed, wherein, a single image sensor unit includes a single microlens and a plurality of image sensors light passing through the imaging lens and reaching each image sensor unit passes through the microlens and forms an image on the plurality of image sensors constituting the image sensor unit, an inter-unit light shielding layer is formed between the image sensor units themselves, and a light shielding layer is not formed between the image sensor units which constitute the image sensor unit.

Abstract: An imaging device includes pixel circuit including a generation unit generating a voltage; a capacitor having a first electrode to which the voltage is applied; a first amplifier having a first input terminal, connected to a second electrode of the capacitor, and a second input terminal, to which a first reference voltage is applied to, to output a result by comparing the voltage with the first reference voltage; a switch unit controlling a connection between the output of the first amplifier and the first input terminal; and a second amplifier having a third input terminal, to which the output of the first amplifier is connected, and a fourth input terminal, to which a second reference voltage is applied, to output a result by comparing the voltage with the second reference voltage, in which a first gain of the first amplifier is lower than a second gain of the second amplifier.