Abstract: Configuration, in which images output to a display unit are switched and displayed in accordance with the behavior of a driver, such as movements of the head of the driver, is achieved. Driver information indicating the behavior of the driver of a moving apparatus and images captured by a plurality of cameras that images a situation around the moving apparatus from different viewpoints are input. The images output to the display unit are switched in accordance with the driver information. The plurality of cameras is, for example, a plurality of rear cameras installed in the rear of the moving apparatus. For example, a direction of the face or line-of-sight of the driver is detected. An image in a direction corresponding to the detected direction of the face or line-of-sight of the driver is selected as an output image, and displayed on the display unit. Alternatively, an image in a direction indicated by a gesture of the driver is selected, and displayed on the display unit.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: An imaging device includes a pixel array part having a plurality of pixels that perform photoelectric conversion, a converter that converts an analog pixel signal output from the pixel array part into digital pixel data, a first signal processing unit that performs first signal processing on the digital pixel data, a second signal processing unit that performs second signal processing that is at least partly shared by the first signal processing on the digital pixel data or data that has been subjected to at least a part of the first signal processing, a recognition processing unit that performs predetermined recognition processing on the basis of output data of the second signal processing unit, and an output interface unit that outputs at least one of output data of the first signal processing unit and the output data of the recognition processing unit.

Abstract: To provide a semiconductor apparatus that makes it possible to further improve the efficiency in heat dissipation, and to provide an electronic apparatus that includes the semiconductor apparatus. A semiconductor apparatus is provided that includes a substrate, a plurality of chips each stacked on the substrate, and a plurality of guard rings each formed on an outer peripheral portion of a corresponding one of the plurality of chips to surround the corresponding one of the plurality of chips, in which at least portions of at least two of the plurality of guard rings are connected to each other through a thermally conductive material. Further, an electric apparatus is provided that includes the semiconductor apparatus.

Abstract: A photodetector comprising: a separation region that is provided in a semiconductor substrate and defines a pixel region; a hole accumulation region that is provided in the semiconductor substrate of the pixel region along a side surface of the separation region; a multiplication region that is provided in the semiconductor substrate of the pixel region and is configured by joining a first conductivity type region and a second conductivity type region from the surface side of the semiconductor substrate in the thickness direction of the semiconductor substrate; and an insulating region provided in the semiconductor substrate in a region between the multiplication region and the hole accumulation region, wherein a formation depth of the insulating region is larger than a formation depth of the first conductivity type region.

Abstract: There is provided an information processing device that processes detection information of an external recognition sensor. The information processing device includes: a recognition unit that performs recognition processing on an object on the basis of a detection signal of the sensor; and a processing unit that performs fusion processing on first data before the recognition by the recognition unit and another data. The information processing device further includes a second recognition unit that performs recognition processing on the object on the basis of a detection signal of a second sensor. The processing unit performs fusion processing on third data before the recognition by the second recognition unit and the first data, fusion processing on fourth data after the recognition by the second recognition unit and the first data, and the like.

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: A ripple is suppressed in a solid-state imaging element that obtains a spectral spectrum. The solid-state imaging element includes a surface layer, a filter layer, and a photoelectric conversion layer. In the solid-state imaging element, the surface layer has a thickness exceeding a half of a coherence length of incident light. Furthermore, in the solid-state imaging element, the filter layer transmits predetermined target light of the incident light transmitted through the surface layer and reflects a rest of the incident light transmitted through the surface layer to the surface layer. Furthermore, in the solid-state imaging element, the photoelectric conversion layer photoelectrically converts the predetermined target light transmitted through the filter layer.

Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.

Abstract: To reduce the influence of generation of after-pulses when a pixel including a SPAD is used. In a SPAD pixel, a PN junction part of a P+ type semiconductor layer and an N+ type semiconductor layer is formed, a P type semiconductor layer having a concentration higher than the concentration of a silicon substrate is formed in a region deeper than the PN junction part and close to a light absorption layer. With no quenching operation generating no after-pulse, electrons generated in the light absorption layer are guided to the PN junction part and subjected to avalanche amplification. When the quenching operation is performed after avalanche amplification, the electrons are guided to the N+ type semiconductor layer by a potential barrier to prevent avalanche amplification. The present disclosure is applicable to an image sensor including a SPAD.

Abstract: To provide an imaging apparatus which enables sophisticated calculations to be realized at lower power. An imaging apparatus according to an embodiment of the present disclosure includes: a first substrate group in which is arranged a light source cell array portion configured to generate a light signal; and a second substrate group in which is arranged a pixel array portion configured to photoelectrically convert the light signal and output a pixel signal representing a result of a sum-of-product computation. The first substrate group and the second substrate group are stacked so that at least a part of the light source cell array portion overlaps with the pixel array portion.

Abstract: The present disclosure relates to a photodetection device and an electronic apparatus that allow for reducing surface reflection from an on-chip microlens and suppressing deterioration of image quality. Provided is a photodetection device including: a plurality of pixels that have photoelectric conversion units; on-chip microlenses that are formed in such a way as to correspond to the individual pixels; and an antireflection film that is formed on a surface of the on-chip microlens, in which the antireflection film is constituted by a stacking of: a first inorganic film that is formed by a metal oxide film; and a second inorganic film that is formed on a surface of the first inorganic film and has a lower refractive index than the first inorganic film. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.

Abstract: An apparatus includes a light source unit that emits color light beams having different wavelengths; a light intensity modulation element including pixels, and subjecting the color light beams to intensity modulation to generate an image; a diffraction element configured to simultaneously illuminate at least two pixel regions at different pixel positions, with different color light beams, by diffracting the respective color light beams from the light source unit toward pixel regions at different pixel positions on the light intensity modulation element; and a control unit that changes diffraction angles of the respective color light beams in the diffraction element within a predetermined period. The control unit also sequentially switches illumination regions for the pixel regions by the respective color light beams, to allow all of the color light beams to time-divisionally illuminate any pixel region of the pixel regions within the predetermined period.

Abstract: A distance sensor according to an embodiment of the present disclosure includes: a controller that instructs a light source section to emit a first light pulse; a light receiver that includes a photodiode which causes a signal charge to be generated by receiving a first reflected light pulse corresponding to the first light pulse, and generates a light reception signal by storing the signal charge and converting the signal charge into a voltage; a signal change detector that performs a first detection operation of detecting a first signal change corresponding to the first reflected light pulse in the light reception signal; and a time measurement section that performs, on a basis of the first signal change, a first measurement operation of measuring a first time interval from an emission timing of the first light pulse in the light source section to a reception timing of the first reflected light pulse in the light receiver.

Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: Imaging devices are disclosed. In one example, an imaging device includes a pixel array with light-receiving pixels that are separated pixel lines, and that accumulating electric charge in an accumulation period. An exposure controller sets time lengths of the accumulation such that the time lengths repeat in predetermined order. The accumulation period includes a first accumulation period and a second accumulation period each having a first time length, and a third accumulation period and a fourth accumulation period each having a second time length. A processor generates image data by adding pixel values based on the accumulation result in a first pixel line in the first accumulation period, the accumulation result in a second pixel line in the second accumulation period, the accumulation result in the first pixel line in the third accumulation period, and the accumulation result in the second pixel line in the fourth accumulation period.

Abstract: It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit. The solid-state image sensor further includes a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FO unit via the interlayer insulating film and including a back gate unit.

Abstract: An imaging device includes a first pixel including a first photoelectric conversion region and a first amplification transistor, a second pixel adjacent the first pixel and including a second photoelectric conversion region and a second amplification transistor, and a first contact coupled to the first amplification transistor and the second amplification transistor, and that receives a power supply signal for the first amplification transistor and the second amplification transistor.

Abstract: A solid-state imaging device as disclosed includes a semiconductor layer having a light incidence surface and an element formation surface. The semiconductor layer includes a plurality of photoelectric conversion units including a first photoelectric conversion portion, a second photoelectric conversion portion, an isolation portion, a charge accumulation region, a first transfer transistor capable of transferring a signal charge from the first photoelectric conversion portion to the charge accumulation region, and a second transfer transistor capable of transferring a signal charge from the second photoelectric conversion portion to the charge accumulation region.

Abstract: A semiconductor device according to the present technology includes a semiconductor chip, and a wiring board portion having the semiconductor chip mounted thereon and having an external connection terminal for establishing electrical connection to the outside, the external connection terminal being formed on its back surface which is a surface opposite to its front surface which is a surface on which the semiconductor chip is mounted, in which the semiconductor chip is connected to a terminal formed on the front surface of the wiring board portion through a bonding wire to be wire-bonded to the wiring board portion, and a heat dissipation member is disposed between the bonding wire and the wiring board portion.