Abstract: Illumination sources including a light generation portion comprising an LED assembly configured to output light at a first intensity while generating a first quantity of heat per unit time are disclosed. The heat dissipation portion comprises an MR-16 form factor heat sink configured to dissipate at least the first quantity of heat per unit time, wherein the light generation portion and the heat dissipation portion are characterized a first mass, and wherein a ratio of the first intensity to the first mass is within a range of about 10 lumens per gram to about 30 lumens per gram.

Abstract: Compact reflective lens for a high intensity light emitting diode light sources having improved output beam characteristics are disclosed. The reflective lenses can be configured to increase output intensity, control output light characteristics, and reduce glare.

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.

Abstract: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about ?0.6 degrees in a c-plane direction and up to about ?20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract: Techniques for fabricating and using arrays of violet-emitting LEDs coated with densely-packed-luminescent-material layers together with apparatus and method embodiments thereto are disclosed.

Abstract: An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.

Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Abstract: Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.