Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
Type:
Grant
Filed:
April 28, 2015
Date of Patent:
June 14, 2016
Assignee:
Soraa, Inc.
Inventors:
Aurelien J. F. David, Troy A. Trottier, Michael R. Krames
Abstract: The present invention relates to a compact optic lens for a high intensity light source having improved output beam characteristics. The compact optic lens provides increased light output without increasing device cost or device size to enable coverage of many beam angles.
Type:
Grant
Filed:
May 14, 2013
Date of Patent:
June 7, 2016
Assignee:
Soraa, Inc.
Inventors:
Frank Tin Chung Shum, Michael Ragan Krames
Abstract: The present invention relates to a compact optic lens for a high intensity light source having improved output beam characteristics. The compact optic lens provides increased light output without increasing device cost or device size to enable coverage of many beam angles.
Abstract: An ultrapure mineralizer is formed by vaporization, condensation, and delivery of a condensable mineralizer composition. The mineralizer has an oxygen content below 100 parts per million. The ultrapure mineralizer is useful as a raw material for ammonothermal growth of bulk group III metal nitride crystals.
Type:
Grant
Filed:
September 20, 2013
Date of Patent:
March 29, 2016
Assignee:
Soraa, Inc.
Inventors:
Alex Alexander, John W. Nink, Jr., Mark P. D'Evelyn
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Type:
Grant
Filed:
September 27, 2013
Date of Patent:
March 22, 2016
Assignee:
Soraa, Inc.
Inventors:
Thomas M. Katona, James W. Raring, Mark P. D'Evelyn, Michael R. Krames, Aurelien J. F. David
Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
Type:
Grant
Filed:
August 16, 2011
Date of Patent:
March 22, 2016
Assignee:
Soraa, Inc.
Inventors:
Aurelien J. F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
Abstract: Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.
Type:
Grant
Filed:
August 29, 2013
Date of Patent:
March 1, 2016
Assignee:
Soraa, Inc.
Inventors:
Wenkan Jiang, Dirk Ehrentraut, Bradley C. Downey, Mark P. D'Evelyn
Abstract: Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.
Type:
Grant
Filed:
March 6, 2013
Date of Patent:
February 23, 2016
Assignee:
Soraa, Inc.
Inventors:
Aurelien J. F. David, Michael J. Grundmann
Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
Type:
Grant
Filed:
March 27, 2012
Date of Patent:
January 12, 2016
Assignee:
Soraa, Inc.
Inventors:
Arpan Chakraborty, Michael Grundmann, Anurag Tyagi
Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.