Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

Abstract: A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Abstract: The present disclosure relates generally to semiconductor techniques. More specifically, embodiments of the present disclosure provide methods for efficiently dicing substrates containing gallium and nitrogen material. Additionally, the present disclosure provides techniques resulting in an optical device comprising a substrate having a dislocation bundle center being used as a conductive region for a contact.

Abstract: Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.

Abstract: An LED lighting system powered by an AC power source comprising a rectifier module configured to provide a rectified output to a first group of LED devices and a second group of LED devices electrically coupled to the first group of LED devices. A current monitor module electrically coupled to the first group and to the second group of LED devices is configured to determine a first current level using a drawn current level signal associated with the first group of LED devices and a second current level using a reference current level signal associated with the second group of LED devices. The current monitor module is electrically coupled to a temperature sensing module that is configured to generate at least one compensation factor based at least in part on a temperature. The compensation factor is used to control (directly or indirectly) current through the LED devices.

Abstract: Apparatus and methods of attaching accessories to LED lamps and for providing active accessories in LED lamps are disclosed.

Abstract: An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.

Abstract: A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.

Abstract: An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C.

Abstract: A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used.

Abstract: An illumination source includes a heat sink with an inner core region and an outer core region having structures to dissipate heat from the inner core region. An LED assembly is pressed into a thermally-conductive compound disposed between the LED assembly and the inner core region. A retaining clamp is used to mechanically press the LED assembly into the thermally-conductive compound.

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

Abstract: A light source comprises a heat-sink having a mounting region, and heat-dissipating fins, a base housing having an inner cavity and coupled to the heat-sink, and an integrated lighting module including: a printed circuit board; an LED on a substrate coupled to the printed circuit board within a first lateral region of the printed circuit board, and an electronic driving circuit for providing power to the LED and coupled to the printed circuit board within a second lateral region of the printed circuit board, wherein a bottom surface of the substrate is thermally coupled to the mounting region of the heat-sink, and wherein the second lateral region of the integrated lighting module is located within the inner cavity of the base housing.

Abstract: Techniques for manufacturing optical devices are disclosed. More particularly, light emitting diodes and in particular to ohmic contacts for light emitting diodes are disclosed.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm?2.