Abstract: A light-emitting system for emitting light, comprising: (a) at least one light-emitting diode (LED) configured to emit LED light; (b) at least one optical element optically coupled to said at least one LED and configured to direct a first fraction of said LED light along a first optical path and a second fraction of said LED light along a second optical path; and (c) a color modification element disposed along said second optical path and configured to modify the spectrum of said second fraction of said LED light to emit modified light.
Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
Type:
Grant
Filed:
November 25, 2013
Date of Patent:
March 7, 2017
Assignee:
Soraa, Inc.
Inventors:
Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Michael Krames
Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.
Type:
Grant
Filed:
February 5, 2015
Date of Patent:
February 28, 2017
Assignee:
Soraa, Inc.
Inventors:
Michael J. Cich, Aurelien J. F. David, Christophe Hurni, Rafael Aldaz, Michael Ragan Krames
Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.
Type:
Grant
Filed:
December 31, 2012
Date of Patent:
February 7, 2017
Assignee:
Soraa, Inc.
Inventors:
Mark P. D'Evelyn, James S. Speck, Derrick S. Kamber, Douglas W. Pocius
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Type:
Grant
Filed:
March 18, 2016
Date of Patent:
February 7, 2017
Assignee:
Soraa, Inc.
Inventors:
Thomas M. Katona, James W. Raring, Mark P. D'Evelyn, Michael R. Krames, Aurelien J. F. David
Abstract: Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
Type:
Grant
Filed:
September 12, 2014
Date of Patent:
January 10, 2017
Assignee:
Soraa, Inc.
Inventors:
Wenkan Jiang, Dirk Ehrentraut, Mark P. D'Evelyn
Abstract: Accessories for LED lamp systems and methods of attaching accessories to illumination sources (e.g., LED lamps) are disclosed. A beam shaping accessories mechanically affixed to the LED lamp. The lens is designed to adapt to a first fixture that is mechanically attached to the lens. Accessories are designed to have a second fixture for mating to the first fixture such that the first fixture and the second fixture are configured to produce a retaining force between the first accessory and the lens. The retaining force is a mechanical force that is accomplished by mechanical mating of mechanical fixtures, or the retaining force is a magnetic force and is accomplished by magnetic fixtures configured to have attracting magnetic forces. In some embodiments, the accessory is treated to modulate an emanated light pattern (e.g., a rectangular, or square, or oval, or circular or diffused emanated light pattern). A USB connector is also provided.
Type:
Grant
Filed:
January 28, 2014
Date of Patent:
November 8, 2016
Assignee:
Soraa, Inc.
Inventors:
Frank Tin Chung Shum, Artem Mishin, Zinovy Dolgonosov, Clifford Jue, Abdul Assaad, Aurelien J. F. David, Wilfred Martis
Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
Type:
Application
Filed:
January 14, 2016
Publication date:
September 22, 2016
Applicant:
Soraa, Inc.
Inventors:
Michael R. Krames, Aurelien J.F. David, Emil Radkov, Willem Smitt
Abstract: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.
Type:
Grant
Filed:
January 24, 2012
Date of Patent:
September 20, 2016
Assignee:
Soraa, Inc.
Inventors:
Rajat Sharma, Andrew Felker, Aurelien J.F. David
Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.
Type:
Grant
Filed:
October 30, 2014
Date of Patent:
August 16, 2016
Assignee:
Soraa, Inc.
Inventors:
Aurelien J. F. David, Rafael Aldaz, Michael Ragan Krames, Frank M. Steranka, Kevin Huang, Troy Trottier
Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
Type:
Grant
Filed:
June 26, 2014
Date of Patent:
August 9, 2016
Assignee:
Soraa, Inc.
Inventors:
Michael R. Krames, Aurelien J. F. David
Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
Type:
Grant
Filed:
August 30, 2012
Date of Patent:
August 2, 2016
Assignee:
Soraa, Inc.
Inventors:
Mark P. D'Evelyn, Dirk Ehrentraut, Wenkan Jiang, Bradley C. Downey
Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Type:
Grant
Filed:
February 26, 2015
Date of Patent:
August 2, 2016
Assignee:
Soraa, Inc.
Inventors:
Rafael Aldaz, Aurelien J. F. David, Daniel F. Feezell, Thomas M. Katona, Rajat Sharma
Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.