Abstract: An improved workpiece carrier assembly includes a workpiece retaining assembly having a plurality of distinct retaining elements rather than a one-piece retaining ring. In accordance with one embodiment, a plurality of retaining segments reside within a like plurality of channels. The retaining segments may be individually or collectively controlled by a pressurized fluid system. In accordance with an alternate embodiment, a plurality of retaining pins reside within a like plurality of guide sleeves. The retaining pins may be individually or collectively controlled by a pressurized fluid system.

Abstract: A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.

Abstract: A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.

Abstract: A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtexture and micro-topology of the surface to produce a desired surface contour or planarity. This precise conditioning of the microscopic features of the polishing pad surface controls dishing in workpieces during polishing.

Abstract: A wafer sensor includes a wafer holder, a liquid distribution system, and a pressure sensor. The wafer holder has a hole and is configured so that a wafer being held by the wafer holder restricts the flow of liquid from the liquid distribution system through the hole. The pressure sensor has a predetermined threshold and is configured to sense the pressure of the fluid at the hole. When no wafer is present in the wafer holder, the fluid flows essentially unrestricted through the hole in the wafer holder, resulting in a relatively low pressure of the liquid in the hole. When the wafer holder holds a wafer, the restricted flow through the hole causes an increase in pressure of the liquid in the hole. This increased pressure triggers the pressure sensor, thereby indicating the presence of the wafer in the wafer holder.

Abstract: Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing material attached thereto and a distance measurement device attached to the platen. The distance measurement device includes a light source and a light sensor. Distance between the device and the workpiece is measured by transmitting light through apertures formed within the platen and the polishing material toward the workpiece and focusing the light reflected from the workpiece on an element within the sensor.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.

Abstract: A bladder carrier assembly having a retaining ring permanently bonded to a bladder to form a one-piece disposable bladder assembly. The retaining ring includes a rigid ring member, preferably steel, and a layer of wear resistant material, such as ultra high molecular weight polyethylene or polyether ethyl ketone, which is molded around predetermined portions of the rigid ring member. The bladder is also molded to the retaining ring and an optional template may be molded to a surface of the bladder which lies adjacent a wafer to be polished.

Abstract: A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes.

Abstract: A method of reducing dishing and erosion of surfaces of inlaid material on semiconductor wafers. The method includes forming a sacrificial deposit or layer over at least down features of the patterned surface of the fill layer, that has a lower rate of removal during chemical-mechanical polishing than the fill layer. Elevated caps of sacrificial deposit are formed over inlaid fill material prior to pattern clearing. In CMP pattern clearing, the caps are removed and polishing proceeds at a faster rate on the slightly elevated inlaid fill upper surfaces until they are coplanar with surrounding patterned substrate. Chemical-mechanical polishing can be carried out in a single step, or in multiple steps, to produce the desired result.

Abstract: A lapping or polishing machine which processes the surface of silicon wafer or other work piece by rotating a platen with constant supply of lapping or polishing compound. Said platen of the lapping or polishing machine is connected directly to a direct drive motor and driven by the direct drive motor, and the point to point control of said platen is carried out by a rotary encoder.

Abstract: A method and apparatus for facilitating the removal and replacement of polishing pads utilized in the process of polishing and planarizing workpieces such as semiconductors where the polishing machine employed includes a rotatable platen. The apparatus for facilitating the removal and replacement of polishing pads includes a top plate for securing a polishing pad thereto and means for removably mounting the top plate to the rotatable platen in the polishing machine. Means for removably mounting the top plate to the rotatable platen preferably includes a plurality of electromagnetic elements embedded within the top surface of the rotatable platen and means for activating and deactivating the electromagnetic elements.

Abstract: Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.

Abstract: The present invention relates to a vacuum system for reliably holding wafers exposed to effluents in a wafer chuck. A vacuum pump generates a vacuum communicated to a wafer chuck through a tank. The tank has a baffle for converting vapor effluent to liquid effluent from the air sucked into the vacuum system. The tank stores the liquid effluent to prevent the effluent from fouling the vacuum pump and other components. A pressure transducer is connected to the tank to detect a loss in vacuum that may indicate a lost wafer condition. A trap is placed between the tank and the vacuum pump to detect if excessive effluents have escaped from the tank and to signal that corrective action may need to be taken.

Abstract: The present invention is a polishing compound comprising a colloidal solution of silicon oxide to which an alkaline component and an acid component are added in order to have a buffering action, wherein said alkali component is a quaternary ammonium whose carbon number per one molecular is smaller than 12, and said acid component is at least one selected from the group composed by carbonic acid, boric acid and silicic acid.

Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: Improved chemical mechanical polishing methods for removing material from a surface of a workpiece are disclosed. The workpiece is polished for a predetermined amount of time, the wafer is then moved to the perimeter of a polishing surface and film thickness measurements are obtained. The results from the film thickness measurements are used to adjust parameters for a subsequent polishing process.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.