Abstract: A carrier head for a semiconductor wafer polishing apparatus includes a rigid plate which has a major surface with a plurality of open fluid channels. A flexible wafer carrier membrane has a perforated wafer contact section for contacting the semiconductor wafer, and a bellows extending around the wafer contact section. A retaining member is secured to the rigid plate with a flange on the bellows sandwiched between the plate's major surface and the retaining ring, thereby defining a cavity between the wafer carrier membrane and the rigid plate. A fluid conduit is coupled to the rigid plate allowing a source of vacuum and a source of pressurized fluid alternately to be connected to the cavity. An additional wafer carrier membrane is internally located with respect to the cavity formed by the wafer carrier membrane, and forms another cavity with respect to the rigid plate.

Abstract: A tilt mechanism for periodically tilting a cassette configured to hold a plurality of wafers or workpieces such that the wafers or workpieces become gravity-loaded against a rear portion of the cassette. The tilt mechanism is mounted entirely above a worktable of a CMP or other processing machine and comprises a housing which houses a circular cam having a spiral groove formed therein. A tilt arm is pivotally mounted to the housing and extends vertically between a lower end which is adjacent the cam and an upper end which is fixed to a platform supporting a cassette holding a plurality of workpieces. A cam follower is attached to the lower end of the arm and projects into the groove. Rotary motion of the cam effects pivotal movement of the tilt arm which, in turn, effects tilting of the support platform and the cassette.

Abstract: A spin dryer assembly for drying workpieces such as semiconductor wafers includes a workpiece platform for receiving a workpiece to be dried. A motor is coupled to and spins the platform to effect removal of water and particulates from the workpiece. Gripping fingers are pivotally mounted around the platform and securely grip the workpiece during drying. Spring loaded plungers maintain the gripping fingers in a secured position during drying. A cam ring is vertically movable into and out of contact with the gripping fingers to bias the gripping portions of the fingers outwardly to a release position after drying.

Abstract: Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.

Abstract: A workpiece cleaning element incorporates an injection molded resin core having integral spacers formed at a central portion of the resin core. The resin core is formed from a suitable material that does not leech chemicals or become brittle in the presence of cleaning fluids. A substantially resilient cleaning material located on the resin core includes a plurality of raised ribs that perform contact scrubbing of the workpiece. Each rib includes a longitudinal channel formed therein that divides the rib into a leading cleaner surface and a trailing cleaner surface. The ribs are arranged on the cleaning element in a pattern that promotes effective removal of debris from an inner position on the workpiece to the outer edge of the workpiece.

Abstract: A method for detecting the presence of a workpiece on a polishing pad of a chemical mechanical polishing (CMP) machine applies an optical interrogation signal to a workpiece during the CMP process. An optical probe assembly produces a light signal that communicates with the polishing pad; portions of the light signal reflect from the polishing pad in a scattered manner. A light receptor receives reflected light associated with the interrogation signal, and the characteristics of the received light are analyzed and processed by a suitable processor. By analyzing the scattered light signals, the method distinguishes the reflective characteristics of the polishing pad from the reflective characteristics of the workpiece. Thus, the method may be used to detect a lost or broken workpiece in a fast and effective manner.

Abstract: A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

Abstract: The carrier assembly includes an internal pressurized fluid circuit which places an incompressible fluid layer between a pressure plate and an internal diaphragm. The internal diaphragm has a flexible portion providing gimbal action for the carrier assembly. The diaphragm and hydrostatic forces of the internal fluid circuitry combine to form a gimbal action exhibiting low friction, but which is otherwise rigid in other axes.

Abstract: A plate stabilizing apparatus is provided which comprises a lateral support structure conflgured to adjust plate alignment which engages vertical rails secured to a polishing machine housing. thus effectively stabilizing the polishing plate while allowing vertical movement of the plate assembly. In a preferred embodiment, a plate stabilizing apparatus includes an alignment plate secured to a subcylinder close to and axially aligned with the polishing plate universal joint. Adjustment screws are provided for lateral adjustment of the polishing plate which is secured to a substantially rigid lateral support structure. The lateral support structure rides within vertical rails secured to the inner housing walls of the polishing apparatus thus allowing vertical movement of the polishing plate during operation.

Abstract: A chemical mechanical planarization (CMP) system includes multiple workpiece processing elements arranged in a vertically staggered configuration. The polishing elements are positioned such that an outer edge of a first polishing element overlaps the inner edge of a second polishing element. The overlapping arrangement enables the CMP system to utilize additional polishing elements without substantially increasing the footprint of the CMP system. Each of the polishing elements exhibit different polishing characteristics to enable multiple-step workpiece processing.

Abstract: A machine for polishing semiconductor wafers including a rotatable index table and a drive mechanism for the index table. The index table temporarily accommodates wafers between processing steps. The drive mechanism includes a continuously circulating grooved timing belt that engages gear teeth formed on an outside diameter portion of the index table to effect rotation of the index table. The index table includes a large diameter central opening for accommodating passage of other system components.

Abstract: A spin dryer assembly for drying workpieces such as semiconductor wafers includes a workpiece platform for receiving a workpiece to be dried. A motor is coupled to and spins the platform to effect removal of water and particulates from the workpiece. Gripping fingers are pivotally mounted around the platform and securely grip the workpiece during drying. Spring loaded plungers maintain the gripping fingers in a secured position during drying. A cam ring is vertically movable into and out of contact with the gripping fingers to bias the gripping portions of the fingers outwardly to a release position after drying.

Abstract: A method for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station.

Abstract: A laser element is mounted above a polishing pad of a workpiece polishing machine to monitor and control flatness of the pad. Actual flatness of the pad is determined by a computer processor which receives thickness measurements from the laser element and compares the thickness at the inner diameter portion of the pad with the thickness at the outer diameter portion of the pad. If the flatness varies substantially from a target flatness, a conditioning device mounted on the machine is moved appropriately relative to the pad to conform its flatness to the target flatness.

Abstract: A carrier carrying device (CCD) for holding a workpiece carrier includes a lower portion and an upper portion coupled to the lower portion. A plurality of shoulder screws are employed to couple the upper and lower portions together; the shoulder screws restrict translational movement of the upper portion to one direction relative to the lower portion. The upper portion includes a flange having a plurality of slots configured to receive a like plurality of engagement members located on the workpiece carrier. A number of springs located between the upper and lower portions cause the flange to engage and secure the engagement members to the CCD. The shoulder screws facilitate alignment of the CCD relative to the workpiece carrier during installation of the CCD.

Abstract: The present invention relates generally to a method for conditioning polishing materials that are generally used to polish disks used for magnetic recording. The polishing material is conditioned by moving a conditioning ring relative to the polishing material. More particularly, the conditioning ring is rotated and/or orbited across the surface of the polishing material, so that the material is conditioned. Preferably, the conditioning ring comprises an annular ring of abrasive material fixedly applied to a substantially planar surface of the conditioning ring.