Patents Assigned to STMicroelectronic S.A.
  • Publication number: 20110062601
    Abstract: The generation of a chip identifier supporting at least one integrated circuit, which includes providing a cutout of at least one conductive path by cutting the chip, the position of the cutting line relative to the chip conditioning the identifier.
    Type: Application
    Filed: November 18, 2010
    Publication date: March 17, 2011
    Applicant: STMicroelectronics S.A.
    Inventor: Fabrice Marinet
  • Publication number: 20110063087
    Abstract: The selection of at least one back-modulation element of an electromagnetic transponder from among a plurality of resistive and/or capacitive modulation elements of the load of an oscillating circuit of the transponder, including selecting the modulation element(s) according to a binary message received from a read/write terminal.
    Type: Application
    Filed: November 3, 2010
    Publication date: March 17, 2011
    Applicant: STMicroelectronics S.A.
    Inventor: Jean-Pierre Enguent
  • Patent number: 7906381
    Abstract: A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second active zone is below the first active zone. First and second layers of semiconductor material are formed on the second active zone, so that the second layer is substantially in the same plane as the first active zone. Insulated gates are produced on the first active zone and the second layer. At least one isolation trench region is selectively removed, and the first layer is selectively removed so as to form a tunnel under the second layer. The tunnel is filled with a dielectric material to insulate the second layer from the second active zone of the substrate. Also provided is such an integrated circuit.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: March 15, 2011
    Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SAS
    Inventors: Nicolas Loubet, Didier Dutartre, Stéphane Monfray
  • Patent number: 7902621
    Abstract: A semiconductor structure including a first active area under which is buried a first reflective layer and a least one second active area under which is buried a second reflective layer, wherein the upper surface of the second reflective layer is closer to the upper surface of the structure than the upper surface of the first reflective layer.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: March 8, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Perceval Coudrain, Philippe Coronel, Michel Marty, Matthieu Bopp
  • Patent number: 7902859
    Abstract: Circuitry including an output circuit having a first variable resistance block coupled between a first supply voltage and an output node, the first variable resistance block having a plurality of selectable resistive elements coupled in series with at least one resistor between the first supply voltage and the output node, the output circuit having an output impedance determined by the resistance of the first variable resistance block; and a compensation circuit for regulating the impedance of the first variable resistance block of the output circuit, the compensation circuit having a second variable resistance block coupled between the first supply voltage and the first node of an external resistor, the second node of the external resistor being coupled to a second supply voltage, wherein the second variable resistance block comprises a plurality of selectable resistive elements coupled in series with at least one resistor between the first supply voltage and the first node of the external resistor, and wher
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: March 8, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Nicolas Ricard, Laurent Jean Garcia
  • Publication number: 20110053053
    Abstract: A porous silicon wafer including, on its upper surface side, multiple recesses, this upper surface being coated with a porous silicon layer having pores smaller than those of the wafer bulk.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 3, 2011
    Applicant: STMicroelectronics S.A.
    Inventors: Sébastien Desplobain, Gaël Gautier
  • Patent number: 7897436
    Abstract: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: March 1, 2011
    Assignees: STMicroelectronics, S.A., Commissariat A l'Energie Atomique
    Inventors: Guillaume Bouche, Bernard Andre, Nicolas Sillon
  • Patent number: 7900051
    Abstract: A secure method and system of digital data transmission between a sender and a receiver, including a phase of receiver authentication by a symmetrical authentication key sharing algorithm with no transmission of the key, a phase of data watermarking by using the authentication key as the watermarking key, and a phase of transmission of the watermarked data.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: March 1, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Luc Wuidart, Pierre Balthazar
  • Publication number: 20110042747
    Abstract: A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell connected to a pad of the circuit including a diode having an electrode, connected to a region of a first conductivity type, connected to the second power supply rail and having an electrode, connected to a region of a second conductivity type, connected to the pad and, in parallel with the diode, a thyristor having an electrode, connected to a region of the first conductivity type, connected to the pad and having a gate, connected to a region of the second conductivity type, connected to the first rail, the first and second conductivity types being such that, in normal operation, when the circuit is powered, the diode is non-conductive.
    Type: Application
    Filed: August 20, 2010
    Publication date: February 24, 2011
    Applicant: STMicroelectronics S.A.
    Inventors: Philippe Galy, Christophe Entringer, Jean Jimenez
  • Patent number: 7893992
    Abstract: Device comprising a camera module with automatic focusing itself comprising an optical chip (8) and an optical block (7), the optical block (7) integrating at least an objective (3), at least a focusing means (11) for adjusting the focus of the objective (3), the optical chip (8) integrating at least an image sensor (14) placed on a first face of a substrate of the optical chip (8). This optical chip (8) also includes a microprocessor (4) placed on the same substrate, receiving image signals originating from the image sensor (14) and generating a control signal based on the said image signals, that is applied to the said focusing means (11) to focus the objective (3).
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: February 22, 2011
    Assignee: STMicroelectronics S.A.
    Inventor: Julien Vittu
  • Publication number: 20110037137
    Abstract: An image sensor including a first substrate having a first surface intended to be illuminated and a second surface on the side of which is formed a plurality of photodetection areas, said second surface being covered with a stack of interconnect levels including metal layers topped with insulating material, and of a second substrate placed on the insulating material of the last interconnect level, in which are formed vias in contact with connection elements of the interconnect levels, at least one of the interconnect levels including conductive shielding areas aligned with the photodetection areas.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 17, 2011
    Applicant: STMicroelectronics S.A.
    Inventor: Hélène Wehbe-Alause
  • Patent number: 7888791
    Abstract: A device is provided for electrically connecting an integrated circuit chip. The device includes a main board, an intermediate board, and electrical connection balls in a space separating the boards. In the space, a peripheral zone comprises a peripheral matrix of balls, a central zone comprises a central matrix of balls, a first secondary zone comprises a matrix of electrical connection vias linked to the balls of the two adjacent rows of balls of the peripheral matrix, and a second secondary zone comprises a matrix of electrical connection vias linked to balls of the central matrix. The first secondary zone and the second secondary zone are separated by an intermediate zone that includes at least a first part having at least one complementary row of electrical connection balls, and a second part having complementary electrical connection vias linked to the balls of this complementary row.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: February 15, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Pierre Bormann, Luc Morineau, Jacques Chavade
  • Publication number: 20110032032
    Abstract: An adaptive predistorter for applying a predistortion gain to an input signal to be amplified by a power amplifier having a variable supply voltage, the predistorter including: a predistortion gain block adapted to apply a complex gain to a complex input signal; a first table implemented in a first memory and comprising a 2-dimensional array of cells storing complex gain values, the first table adapted to output the complex gain values based on an amplitude of the input signal and the value of the variable supply voltage of the power amplifier; and a second table implemented in a second memory and including a 2-dimensional array of cells storing gain update values for updating the complex gain values of the first table, the gain update values being generated based on an output signal of said power amplifier.
    Type: Application
    Filed: August 3, 2010
    Publication date: February 10, 2011
    Applicant: STMicroelectronics S.A.
    Inventor: Vincent Pinon
  • Patent number: 7885408
    Abstract: A method for masking several identical functional processes manipulating digital data, including dividing the functional processes into steps at the end of each of which the process can be interrupted with the storage of at least one intermediary result, and successively executing the steps of at least two processes and selecting, at each step end, the process of the next step according to the result of a non-deterministic drawing of a number.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: February 8, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Yannick Teglia, Pierre-Yvan Liardet
  • Patent number: 7883906
    Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: February 8, 2011
    Assignees: STMicroelectronics S.A., Universite Francois Rabelais
    Inventors: Ludovic Goux, Monique Gervais
  • Patent number: 7884352
    Abstract: The invention relates to a single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
    Type: Grant
    Filed: December 16, 2004
    Date of Patent: February 8, 2011
    Assignees: STMicroelectronics S.A., STMicroelectronics Crolles 2 SAS
    Inventors: Daniel Bensahel, Yves Campidelli, Oliver Kermarrec
  • Patent number: 7886163
    Abstract: The invention relates to a method of supplying a private quantity (s) in an integrated circuit involved in an authentication procedure by means of an external device that takes said private quantity into account. In order to verify the integrity of said memory element, the private quantity is a function of a signature (SIGN) of at least one memory element (4, 10, 11, 12) associated with the integrated circuit.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: February 8, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Luc Wuidart, Pierre Balthazar
  • Patent number: 7880588
    Abstract: The selection of at least one back-modulation element of an electromagnetic transponder from among a plurality of resistive and/or capacitive modulation elements of the load of an oscillating circuit of the transponder, including selecting the modulation element(s) according to a binary message received from a read/write terminal.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: February 1, 2011
    Assignee: STMicroelectronics S.A.
    Inventor: Jean-Pierre Enguent
  • Patent number: 7880268
    Abstract: A method for forming a MIM-type capacitor by filling of trenches by conformal depositions of insulating materials and of conductive materials, two successive electrodes of the capacitor including on either side of a thin vertical insulating layer at least one conductive layer of same nature, including the step of lowering the level of the conductive layers with respect to the level of the insulating layer separating them.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: February 1, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Sébastien Cremer, Cédric Perrot, Claire Richard
  • Patent number: RE42144
    Abstract: The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: February 15, 2011
    Assignee: STMicroelectronics S.A.
    Inventor: Mathieu Lisart