Abstract: A circuit for generating a cyclic prefix of a symbol comprised of a sequence of time samples, the prefix being the reproduction of the last samples of the symbol at the beginning of the symbol, the symbol being obtained by inverse Fourier transform of complex coefficients corresponding to respective frequencies. The circuit includes a multiplier that shifts the phase of each complex coefficient by a value proportional to its frequency, a memory for storing the samples at the beginning of the symbol, and a multiplexer that copies at the end of the symbol the stored samples.

Abstract: A method for sampling an analogue radiofrequency signal comprising reception of the analogue radiofrequency signal, sending of the received signal on two analogue channels, each channel performing a first signal sampling operation, including a filtering step eliminating signal frequencies that could fold on the useful signal during sampling such that the sampled signal represents a filtered version of the received signal, wherein the sampling frequency is taken to be equal to the frequency of the signal carrier divided by a factor Ndiv1+½, Ndiv1 being an integer number, to bring the useful signal to half of the sampling frequency after sampling.

Abstract: A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f1. The oscillator further includes circuitry for injecting a control signal onto the input of the first amplifying element. The control signal has a second frequency f2 which is a sub-multiple of the first frequency f1.

Abstract: A semiconductor package includes a support plate made of an electrically non-conducting material. Electrical connection vias are formed outside a chip fixing region provided on the front face of the support plate. Electrical connection wires connect pads on a front of the chip to pads on the front of the support plate associated with the electrical connection vias. The front face of the support plate is further provided with at least one intermediate front layer made of a thermally conducting material extending at least partly below the chip. The rear face of the support plate is provided with at least one rear layer made of a thermally conducting material extending at least partly opposite the front layer. The front and rear layers are connected by vias made of a thermally conducting material that fills through-holes made through the plate.

Abstract: A heterodyne receiving circuit for a digital communication system including a first band pass filter receiving a signal from an antenna, an amplifying circuit and a second narrow band pass filter for selecting one particular channel within a band of frequencies. The two filters are carried out with integrated BAW-type tunable resonators which can be adjusted, respectively, by a first electrical signal and a second electrical signal generated by two PLL-type frequency control loops. The second frequency control loop has a variable division factor for the purpose of selecting one particular channel within said band of frequencies. In addition, the receiving circuit includes a mixer for mixing the signal generated at the output of said second filter with a local oscillation frequency in order to produce an intermediate frequency. The division factor is controlled by a digital processing of the intermediate frequency.

Abstract: A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of the semiconductor chip with an interposed interface forming a Schottky barrier, and on the other hand with radially-extending conductive fingers.

Abstract: A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to a first output; a second diode having its anode connected to a second output and having its cathode connected to the first input; a one-way switch having its anode connected to the first output, its cathode being connected to the second output; and a third diode having its anode connected to the second output, its cathode being connected to the first output; the first, second, and third diodes being formed in a first portion of the substrate separated by a wall of the second conductivity type from a second substrate portion comprising the switch.

Abstract: A circuit for biasing the bulk of a MOS transistor, including a capacitive element connecting the bulk of the MOS transistor to a source of an voltage.

Abstract: A method of secure booting of an SMP architecture apparatus provides for the formation of a secure domain comprising a first processor and a part of a shared memory, before the booting of the operating system of the first processor. The operating system of a second processor is booted only after the reciprocal authentication with the first processor and, in case of authentication, the extension of the secure domain to the second processor.

Abstract: A circuit includes a memory cell having a high voltage supply node and a low voltage supply node. Power multiplexing circuitry is included to selectively apply one of a first set of voltages and a second set of voltages to the high and low voltage supply nodes of the cell in dependence upon a current operational mode of the cell. If the cell is in active read or write mode, then the multiplexing circuitry selectively applies the first set of voltages to the high and low voltage supply nodes. Conversely, if the cell is in standby no-read or no-write mode, then the multiplexing circuitry selectively applies the second set of voltages to the high and low voltage supply nodes. The second set of voltages are offset from the first set of voltages. More particularly, a low voltage in the second set of voltages is higher than a low voltage in the first set of voltages, and wherein a high voltage in the second set of voltages is less than a high voltage in the first set of voltages.

Abstract: A distributed combiner/splitter having a first line formed of a first planar winding in a first conductive level and of a second planar winding in a second conductive level, and a second line formed of a third planar winding interdigited with the first winding in the first level, and of a fourth planar winding interdigited with the second winding in the second level, the windings having an increasing width from the outside to the inside.

Abstract: A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

Abstract: A method for detecting a malfunction in a state machine is described. The state machine has an operation modeled by a set of states linked to each other by transitions, the state machine generating, upon each transition, output signals according to input signals comprising signals generated during a previous transition. During a transition, the method comprises steps of generating at least one control signal according to a control signal generated during a previous transition, determining an expected value of the control signal, and comparing the control signal with the expected value.

Abstract: A linear voltage regulator includes a voltage-regulating circuit that controls a power transistor connected to a load. A current-limiting loop circuit includes a common input/output node that is coupled to a control electrode of the power transistor. The loop senses whether a current representative of the current flowing through the power transistor is above a reference current, and in response thereto delivers a non-zero output current to the control electrode of the power transistor. Otherwise, the loop does not deliver any output current to the control electrode of the power transistor.

Abstract: Artifacts of an incident digital image including pixels carrying information are reduced by determining, for certain pixels being considered from the image, displaced pixels. A displaced pixel associated with a pixel being considered is situated at a location that is displaced with respect to the location of the pixel being considered. Substitution information is determined by taking into account the variations between each piece of information carried by pixels situated at locations adjacent to the pixel being considered. The pixel being considered is then selectively replaced by a substitution pixel equal to the displaced pixel or to a combination of the displaced pixel and the pixel being considered, depending on the value of the substitution information.

Abstract: A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.

Abstract: A voltage regulation circuit intended to generate a regulated voltage for an electronic device, comprising: a transconductance amplifier based on a pair of MOS type differential amplifiers, said amplifier having a first input onto which a reference potential is applied and a second input onto which a counter reaction of said regulated voltage is input; a follower stage connected to the output from said transconductance amplifier; a MOS type transistor that will be used to make the output stage of the regulation circuit with a source connected to a first power supply potential. The transconductance amplifier comprises a resistive load 360 with a profile in K/gm, where gm is the transconductance coefficient of said input differential pair, said resistive load being connected to said first power supply potential.

Abstract: A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.

Abstract: A method processes parallel electrical signals, using parallel processing circuits that process successive cycles of electrical signals according to a rule for allocating electrical signals to the processing circuits. The method comprises, between the processing cycles, a step of modifying the rule for allocating electrical signals to the processing circuits, so that a processing circuit processes electrical signals of different ranks during different processing cycles. The method can be applied particularly to secure a memory during read phases of the memory and of an integrated circuit with a microprocessor using such a memory.

Abstract: A method and a circuit for determining the orientation of ridges of a digital image representing a fingerprint or the like, including for each image pixel, calculating a quantity taking into account the neighboring pixels in all directions, and of bidirectionally scanning the image line by line.