Abstract: A read boost circuit arranged to boost the voltage difference between a pair of complementary bit lines of a memory device during a read operation, the read boost circuit including: a first transistor adapted to be controlled by the voltage level on a first bit line of the pair of bit lines to couple a second bit line of the pair of bit lines to a first supply voltage; and a second transistor connected directly to ground and adapted to be controlled by the voltage level on the second bit line to couple the first bit line to ground.

Abstract: A method detects metallic atoms in a fluid. The method includes: placing, in a zone sheltered from light, a photodiode comprising a photosensitive surface in contact with a fluid to analyze; heating the photosensitive surface of the photodiode to a temperature sufficient to allow metallic atoms deposited on the photosensitive surface to migrate through this surface; acquiring a signal relative to the lighting of the photodiode; and determining, from the acquired signal, a measurement representative of a contamination status by metallic atoms of the photodiode.

Abstract: The disclosure concerns circuitry for controlling a power transistor of a drive circuit arranged to drive an electrical component, the circuitry comprising: a variable current source adapted to set the level of a current for charging a control terminal of said power transistor; and a control circuit adapted to control said variable current source in a continuous manner based on a feedback voltage.

Abstract: At least three metal-oxide semiconductor transistors with different threshold voltages are formed in and above corresponding first, second and third parts of a semiconductor substrate. The second transistor has a lower threshold voltage than the second transistor, and the third transistor has a lower threshold voltage than the second transistor. The gate oxide layers for the three transistors are formed as follows: a first oxide layer having a first thickness is formed above the first, second and third parts. The first oxide layer above the second part is etched and a second oxide layer having a second thickness smaller than the first thickness is formed. The first oxide layer above the third part is etched and a third oxide layer having a third thickness smaller than the second thickness is formed. The second and the third oxide layers are then nitrided to form first and second oxy-nitride layers.

Abstract: According to the novel method, roto-translational and zooming parameters describing spurious motion effects are determined by exploiting any of the many block matching algorithms commonly used for motion estimation for calculating a motion vector for all or for a selected number of blocks of pixels of the current frame that is processed. Some of the so calculated motion vectors are not taken into account for estimating spurious motion effects. The roto-translational and zooming parameters describing what is considered to be spurious global motion between a current frame and the precedent frame of the sequence, are calculated by processing the selected motion vectors of blocks of pixels of the frame through a recursive procedure that includes computing error values and readjusting the roto-translational and zooming parameters based on the error values.

Abstract: An integrated circuit, method of making an integrated circuit and method of addressing peripherals of an integrated circuit are disclosed for preventing copied software from running on unauthorized hardware. A permanent key is embedded in the integrated circuit and used to transform a peripheral access address output by a processor of the integrated circuit. The transformed access address is supplied to a peripheral address decoder f the integrated circuit, which allows the processor to access a corresponding peripheral. A method of supplying integrated circuits to prevent copied software from running on unauthorized hardware is also disclosed.

Abstract: An image sensor having a surface intended to be illuminated and pixels, each pixel including a photosensitive area formed in an active area of the substrate, at least one first pixel including a first microlens located on the surface, the sensor including at least one second pixel including a transparent portion forming a pedestal located at least partly on the surface and a second microlens at least partially covering the pedestal.

Abstract: An apparatus, method, and computer program are capable of receiving and cross-correlating a first audio signal and a second audio signal. This produces a cross-correlated signal, which is used to identify a plurality of parameters associated with at least one of the first and second audio signals. The parameters are used to generate an indicator identifying an extent to which the first and second audio signals match.

Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.

Abstract: An integrated circuit comprising (i) a plurality of portions, each portion including test control circuitry; and (ii) at least one test input arranged to receive test signals, the circuit having a test mode in which one or more of the plurality of portions are testable, wherein the circuit has a reset mode which has priority over the test mode.

Abstract: An integrated circuit package comprises a molding compound covering a semiconductor die. A healing substance is on the surface of the semiconductor die at an interface of the molding compound and the semiconductor die. The healing compound comprises a catalyst and a plurality of microcapsules containing a sealing compound. If the molding compound becomes delaminated from the semiconductor die the microcapsules rupture and spill the sealing compound. When the sealing compound is spilled and contacts the catalyst the sealing compound and catalyst polymerize and fasten the molding compound to the semiconductor die.

Abstract: A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity.

Abstract: A method for verifying alignment between first and second integrated devices coupled together using a reference and a coupling capacitor, including: transmitting a reference signal on a transmission electrode of the reference capacitor; receiving a coupling signal on a reception electrode of the reference capacitor; amplifying the coupling signal, generating a reception reference signal; generating a reception control signal as a function of the reception reference signal; transmitting a communication signal on an electrode of the coupling capacitor; receiving a reception signal on an electrode of the coupling capacitor; amplifying the reception signal, generating a first compensated signal; controlling a level of amplification of amplifying the coupling signal and the reception signal as a function of the reception control signal; and detecting a possible misalignment between the first and second devices based on an amplitude of the communication signal and an amplitude of the compensated signal.

Abstract: An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.

Abstract: An amplifier having an output stage with a complementary pair of first and second transistors each coupled to an output node of the amplifier; control circuitry arranged to provide a control signal at a control node of the first transistor based on the voltage at an input node of the amplifier; and adjustment circuitry arranged to adjust the control signal to maintain the current through the first transistor above a minimum value.

Abstract: A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into approximately domed electrical bonding pads.

Abstract: A method of communication between a master circuit and two slave circuits over a serial bus wherein: the two slave circuits simultaneously transmit their associated identifiers; the two slave circuits simultaneously transmit the inverse of these identifiers; and each slave circuit exploits the combinations present on the bus to determine an order of communication between the two circuits.

Abstract: An embodiment of a discharge circuit for evacuating electric charge accumulated in circuit nodes of a charge pump during a discharge phase consequent to a shutdown of the charge pump is proposed. The charge pump is configured to bias each circuit node with a corresponding pump voltage during an operational phase of the charge pump. The discharge circuit includes a generator circuit configured to generate a discharge current during the discharge phase. The discharge circuit further includes means for evacuating the electric charge stored in each circuit node of the charge pump during a corresponding portion of the discharge phase; such means for evacuating include a respective discharge stage for each circuit node of the charge pump. Each discharge stage includes a first discharge circuit branch and a second discharge circuit branch coupled to the corresponding circuit node.

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract: An embodiment of a network-on-chip is provided. The network-on-chip includes a plurality of sources of requests and a plurality of destinations for requests. The plurality of destinations are configured to provide respective responses to respective requests. The network-on-chip further includes an interconnect for routing said requests and respective responses to said requests to and from the plurality of sources and at least one transaction reordering arrangement. The transaction reordering arrangement is configured to reorder said responses such that said responses are provided to a respective source in an order which corresponds to an order in which the requests are issued by said respective source. A respective transaction reordering arrangement is associated with a respective source.