Patents Assigned to STMicroelectronics AS
  • Patent number: 9647724
    Abstract: A wireless unit includes a first motion sensitive device; communications circuitry for wirelessly communicating with a further wireless unit; and a processing device configured to compare at least one first motion vector received from the first motion sensitive device with at least one second motion vector received from a second motion sensitive device of the further wireless unit.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: May 9, 2017
    Assignees: STMicroelectronics SA, STMicroeletronics (Crolles 2) SAS
    Inventors: Pascal Urard, Christophe Regnier, Daniel Gloria, Olivier Hinsinger, Philippe Cavenel, Lionel Balme
  • Patent number: 9645830
    Abstract: A configuration arrangement includes a first interface configured to receive configuration information from a master configuration function and a second interface configured to provide at least one output to one or more entities to be configured. Configuration circuitry operates responsive to the configuration information to provide the at least one output, wherein that output controls the configuration of the one or more entities.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: May 9, 2017
    Assignee: STMicroelectronics (Research & Development) Limited
    Inventor: Gavin Probyn
  • Patent number: 9647625
    Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: May 9, 2017
    Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: David Petit, Sylvain Joblot, Pierre Bar, Jean-Francois Carpentier, Pierre Dautriche
  • Publication number: 20170125474
    Abstract: An image sensor including a control circuit and a plurality of pixels, each pixel including: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area; first and second insulated vertical electrodes electrically connected to each other, opposite each other, and delimiting the storage area, the first electrode extending between the storage area and the photosensitive area, the second electrode including a bent extension opposite a first end of the first electrode, the storage area emerging onto the photosensitive area on the side of the first end, the control circuit being capable of applying a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block said transfer.
    Type: Application
    Filed: April 22, 2016
    Publication date: May 4, 2017
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Philippe Are
  • Publication number: 20170125276
    Abstract: A semiconductor device carrier tape with image sensor detectable dimples is disclosed. The dimpled carrier tape is formed of a flexible strip of material. A plurality of pockets are disposed spaced apart along the length of the flexible strip of material. Each pocket is configured to hold a semiconductor device. A dimple is formed in each of the plurality of pockets where each dimple has a peripheral edge and a bottom surface. Detection of the dimple by an image sensor facilitates alignment of a semiconductor device with the pocket and precise placement of the semiconductor device in the pocket.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 4, 2017
    Applicant: STMicroelectronics (Malta) Ltd
    Inventors: Jeremy Spiteri, Ivan Ellul
  • Publication number: 20170123202
    Abstract: An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region.
    Type: Application
    Filed: January 9, 2017
    Publication date: May 4, 2017
    Applicants: STMicroelectronics S.r.l., STMicroelectronics International N.V.
    Inventors: Benedetto Vigna, Marco Ferrera, Sonia Costantini, Marco Salina
  • Publication number: 20170127567
    Abstract: An electronic device includes a support plate with an integrated circuit chip fixed onto the support plate. A heat sink is mounted to the support plate. An electrical connection wire is provided with one end electrically connected to the heat sink and another end electrically connected to an electrical contact provided on the support plate.
    Type: Application
    Filed: April 18, 2016
    Publication date: May 4, 2017
    Applicant: STMicroelectronics (Grenoble 2) SAS
    Inventors: Benoit Besancon, Agnes Baffert, Karine Saxod
  • Publication number: 20170122195
    Abstract: An internal combustion engine is supplied with a mixed fuel from a supply system. The mixed fuel includes hydrogen. An electrolytic cell operates to produce hydrogen and oxygen starting from water in a liquid or vapor state. The produced hydrogen is delivered for inclusion in the mixed fuel and the produced oxygen is delivered to an intake of the internal combustion engine. A converter device operates to generate electrical energy starting from the thermal energy of exhaust gases output from the internal combustion engine. At least part of the electrical energy generated by the converter device is used in the electrolytic cell for the production of hydrogen.
    Type: Application
    Filed: May 19, 2016
    Publication date: May 4, 2017
    Applicant: STMicroelectronics S.r.l.
    Inventor: Paolo Crema
  • Patent number: 9641143
    Abstract: An electronic device includes a transimpedance amplifier stage having an amplifier end stage of the class AB type and a preamplifier stage coupled between an output of a frequency transposition stage and an input of the amplifier end stage. A self-biased common-mode control stage is configured to bias the preamplifier stage. The preamplifier stage is formed by a differential amplifier with an active load that is biased in response to the self-biased common-mode control stage.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: May 2, 2017
    Assignee: STMicroelectronics SA
    Inventor: Laurent Chabert
  • Patent number: 9640114
    Abstract: A device includes a matrix of active pixels. Each active pixel includes an OLED and a control circuit configured to refresh the active pixel and including at least one transistor having a first conduction terminal coupled to a supply line and a second conduction terminal coupled to the OLED. Supply circuitry is configured to apply a supply voltage to the supply line of each active pixel during the refreshing of the active pixel and for a time period less than a duration of the refreshing of the active pixel.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: May 2, 2017
    Assignee: STMicroelectronics International N.V.
    Inventors: Jerome Nebon, Christophe Forel
  • Patent number: 9640464
    Abstract: A method for manufacturing a surface-mount electronic device includes making a first partial cut from a bottom of an assembly that includes a first semiconductor body that is disposed on a first die pad, a second semiconductor body that is disposed on a second die pad, and a plurality of terminal regions that is disposed between the first and second die pads. The first partial cut forms a recess by removing a portion of each of the terminal regions. The recess is defined by a transverse wall, a first sidewall, and a second sidewall. The first and second sidewalls and the transverse wall are coated with an anti-oxidation layer. A second partial cut is made from the top, where the second partial cut removes the transverse wall, separates the first and second semiconductor bodies, and has a width that is greater than a width of the first partial cut.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: May 2, 2017
    Assignee: STMicroelectronics S.r.l.
    Inventor: Fabio Marchisi
  • Patent number: 9640614
    Abstract: An integrated device includes a semiconductor body including an STI insulating structure that laterally delimits first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in the first active areas. A power component, formed in the second active area, includes a source region, a body region, a drain-contact region, and at least one LOCOS insulation region. The insulating region is arranged between the body region and the drain-contact region and has a prominent portion that emerges from a surface of the semiconductor body, and an embedded portion inside it. The prominent portion of the LOCOS insulation region has a volume greater than that of the embedded portion.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Alessandro Causio, Paolo Colpani, Simone Dario Mariani
  • Patent number: 9640483
    Abstract: A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premetallization dielectric layer. A metal contact extends from the first metallization layer to the doped region. The premetallization dielectric layer includes sub-layers, and the first metal contact is formed by sub-contacts, each sub-contact formed in one of the sub-layers. Each first sub-contact has a width and a length, wherein the lengths of the sub-contacts forming the metal contact are all different from each other.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS, INC.
    Inventor: John Hongguang Zhang
  • Patent number: 9640506
    Abstract: An embodiment for manufacturing electronic devices is proposed. The embodiment includes the following phases: a) forming a plurality of chips in a semiconductor material wafer including a main surface; each chip includes respective integrated electronic components and respective contact pads facing the main surface; said contact pads are electrically coupled to the integrated electronic components; b) attaching at least one conductive ribbon to at least one contact pad of each chip; c) covering the main surface of the semiconductor material wafer and the at least one conductive ribbon with a layer of plastic material; d) lapping an exposed surface of the layer of plastic material to remove a portion of the plastic material layer at least to uncover portions of the at least one conductive ribbon, and e) sectioning the semiconductor material wafer to separate the chips.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS S.R.L.
    Inventor: Federico Giovanni Ziglioli
  • Patent number: 9638728
    Abstract: A circuit has a supply line, a reference line and circuitry coupled between the supply line and the reference line. The circuitry outputs a regulated voltage and a measurement voltage. An analog-to-digital converter (ADC) generates a digital signal indicative of variations of potential differences between the supply line and the reference line based on the regulated voltage and the measurement voltage. The generated digital signal may be used to control the circuit.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: May 2, 2017
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Yann Bacher, Nicolas Froidevaux
  • Patent number: 9638844
    Abstract: A spectral filter includes an assembly of filtering cells. Each cell has a same nanostructured pattern and a preferential direction of the pattern. This preferential direction is, for each cell, oriented approximately radially with respect to a single point of the spectral filter. Alternatively, this preferential direction is, for each cell, oriented approximately ortho-radially with respect to the single point of the spectral filter. The single point may be a center point. Alternatively, the single point may correspond to an optical axis of a lens element associated with the spectral filter.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Romain Girard Desprolet, Sandrine Lhostis, Salim Boutami
  • Patent number: 9640574
    Abstract: A process of forming optical sensors includes sealing an imaging portion of each of a plurality of optical sensors on a sensor wafer with a transparent material. The operation of sealing leaves a bonding portion of each of the optical sensors exposed. The process further includes cutting the wafer into a plurality of image sensor dies after sealing the optical sensors such that each image sensor die includes one of the optical sensors sealed with a corresponding portion of the transparent material.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS PTE. LTD.
    Inventors: Jing-En Luan, Junyong Chen
  • Patent number: 9640230
    Abstract: A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector of the non-volatile memory is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Marcella Carissimi, Marco Pasotti, Fabio De Santis
  • Patent number: 9638940
    Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: May 2, 2017
    Assignee: STMICROELECTRONICS SA
    Inventor: Jean-Robert Manouvrier
  • Patent number: 9640633
    Abstract: A semiconductor device that includes a first fin structure in a first portion of a substrate, and a second fin structure in a second portion of the substrate, wherein the first portion of the substrate is separated from the second portion of the substrate by at least one isolation region. A gate structure present extending from the first fin structure across the isolation region to the second fin structure. The gate structure including a first portion on the first fin structure including a first work function metal having at least one void, an isolation portion that is voidless present overlying the isolation region, and a second portion on the second fin structure including a second work function metal.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: May 2, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC., STMICROELECTRONICS, INC.
    Inventors: Andrew M. Greene, Qing Liu, Ruilong Xie, Chun-Chen Yeh