Patents Assigned to STMicroelectronics AS
  • Patent number: 9665816
    Abstract: A machine readable code is presented in the form of a graphic seal shape that includes a central region and numerous triangular shapes arranged in a sequence surrounding the central region. A vertex of each triangular shape extends radially outwardly from the central region. The triangular shapes include at least two visually distinct presentations for encoding information based on a pattern of the visually distinct presentations of the triangular shapes in the sequence.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics, Inc.
    Inventor: Francesco Varone
  • Patent number: 9666670
    Abstract: An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: May 30, 2017
    Assignees: STMicroelectronics, Inc., STMicroelectronics (Crolles 2) SAS
    Inventors: Qing Liu, Thomas Skotnicki
  • Patent number: 9666484
    Abstract: An integrated circuit is formed on a semiconductor substrate and includes a trench conductor and a first transistor formed on the surface of the substrate. The transistor includes: a transistor gate structure, a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor, and a first spacer formed on the first edge of the gate structure and above the first doped region. The first spacer completely covers the first doped region and a silicide is present on the trench conductor but is not present on the surface of the first doped region.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Arnaud Regnier, Stephan Niel, Francesco La Rosa
  • Patent number: 9667268
    Abstract: An analog input voltage is converted to a digital code by, generating a first set of confirmed bits based on a first series of comparisons of an output of a digital-to-analog converter with the analog input voltage and generating a second set of confirmed bits based on a second series of comparisons of the output of the digital-to-analog converter with the analog input voltage. The first set of confirmed bits is independent of the second series of comparisons. The bits of the digital output code corresponding to the analog input voltage are generated based on the first set of confirmed bits, the second set of confirmed bits and a constant value representative of a voltage shift introduced in the digital-to-analog converter between the first series of comparisons and the second series of comparisons.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics International M.V.
    Inventors: Francesca Girardi, Alberto Minuti, Germano Nicollini, Marco Zamprogno
  • Patent number: 9667130
    Abstract: An AC/DC converter includes a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for delivering a DC voltage. A capacitive circuit is connected between the third and fourth terminals. A rectifying bridge circuit has input terminals respectively coupled to the first and second terminals and has output terminal respectively connected to the third and fourth terminals. An inductive element is coupled in series with a first switch circuit between the first terminal and an input terminal of the rectifying bridge circuit.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: May 30, 2017
    Assignees: STMicroelectronics (Tours) SAS, STMicroelectronics, Inc.
    Inventors: Laurent Gonthier, Muriel Nina, Jurgis Astrauskas
  • Patent number: 9667192
    Abstract: An oscillator has an oscillator output emitting an oscillating signal. The oscillator includes oscillator cores which each have a same circuit topology. A set of configuration switches couple a selected number of oscillator cores in parallel to generate the oscillating signal. The oscillator cores are arranged with a symmetry around a central axis. The planar inductors of the oscillator cores are arranged in a petal-like pattern with the planar inductors forming the petals of the petal-like pattern. The selected coupling of the oscillator cores in made in response to a selected phase noise threshold of a modulation device which receives the oscillating signal.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics S.r.l.
    Inventors: Lorenzo Iotti, Andrea Mazzanti, Andrea Pallotta, Francesco Svelto
  • Patent number: 9666679
    Abstract: A transistor is formed by defining a gate stack on top of a semiconductor layer. The gate stack includes a gate dielectric and a gate electrode. A layer of a first dielectric material, having a first dielectric constant, is deposited on side walls of the gate stack to form sacrificial sidewall spacers. Raised source-drain regions are then epitaxially grown on each side of the gate stack adjacent the sacrificial sidewall spacers. The sacrificial sidewall spacers are then removed to produce openings between each raised source-drain region and the gate stack. A layer of a second dielectric material, having a second dielectric constant less than the first dielectric constant, is then deposited in the openings and on side walls of the gate stack to form low-k sidewall spacers.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Clement Gaumer, Daniel Benoit
  • Patent number: 9667138
    Abstract: An electronic device includes a transistor having a body and a body biasing circuit. The body biasing circuit includes a threshold estimator circuit to estimate a threshold voltage of the transistor and a comparison circuit to compare the threshold voltage of the transistor to a reference threshold voltage and to generate a comparison signal based thereupon. A bias adjust circuit generates a body biasing voltage that biases the body of the transistor as a function of the comparison signal, the body biasing voltage being a voltage that, when applied to the body of the transistor, adjusts the threshold voltage thereof to be equal to the reference threshold voltage.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: May 30, 2017
    Assignee: STMICROELECTRONICS (SHENZHEN) R&D CO. LTD
    Inventors: Min Chen, Wen Liu
  • Patent number: 9667201
    Abstract: A class-D audio amplifier incorporates an overcurrent protection scheme implementing two overcurrent thresholds to avoid a dynamic impedance drop. When output current reaches the first threshold as a result of an impedance drop across the speaker, the overcurrent protection circuitry limits the output current to the value of the first threshold, but does not shut down the circuit. The second threshold is used to detect an overcurrent condition to shut down the circuit. Current limiting logic of a first channel monitors the overcurrent condition of a second channel and controls the first channel output in response thereto. This permits the second channel output current to reach the second threshold if the circuit is experiencing a short-circuit condition. This scheme also allows the output current to drop below the first threshold if the overcurrent condition of the second channel is caused by an impedance drop across the output speaker.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd
    Inventors: Ru Feng Du, Qi Yu Liu
  • Patent number: 9664753
    Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics S.r.l.
    Inventors: Giulio Ricotti, Marco Morelli, Marco Marchesi
  • Patent number: 9665215
    Abstract: Apparatus and methods to measure capacitance changes for a touch-sensitive capacitive matrix are described. Charge-removal circuits and measurement techniques may be employed to cancel deleterious effects of parasitic capacitances in the touch-sensitive capacitive matrix. Capacitively switching a supply during timed charge removal may be used to cancel unwanted effects due to clock jitter. The apparatus and methods can improve signal-to-noise characteristics, sensitivity, and/or dynamic range for capacitive measurements relating to touch-sensitive capacitive devices.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics Asia Pacific Pte Ltd
    Inventors: Sze-Kwang Tan, Yannick Guedon
  • Patent number: 9664738
    Abstract: A circuit, such as an integrated circuit or a die, has a first input pad configured to receive a multiplexed signal including scan data and a clock signal, a scan chain having a scan data input and a clock input and circuitry coupled between said first input pad and said scan chain. The circuitry is configured to extract the scan data and the clock signal from the received multiplexed signal, provide the extracted scan data to the scan data input of the scan chain, and provide the extracted clock signal to the clock input of the scan chain.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: May 30, 2017
    Assignee: STMicroelectronics (Research and Development) Limited
    Inventor: Gary Morton
  • Patent number: 9666577
    Abstract: The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: May 30, 2017
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, STMicroelectronics SA, Centre National De La Recherche Scientifique
    Inventors: Yohann Solaro, Sorin Cristoloveanu, Claire Fenouillet-Beranger, Pascal Fonteneau
  • Publication number: 20170148780
    Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.
    Type: Application
    Filed: April 12, 2016
    Publication date: May 25, 2017
    Applicant: STMicroelectronics SA
    Inventors: Johan Bourgeat, Jean Jimenez
  • Publication number: 20170146571
    Abstract: Current flowing through an inductor in response to a pulse width modulation (PWM) control signal is sensed to generate a sensed current. The sensed current is processed over one or more PWM cycles of the PWM control signal to generate an output signal indicative of average inductor current. This processing may include charging and discharging a capacitor at different rates dependent on the sense current, with the detection of capacitor discharge triggering a sampling of a voltage dependent on the sensed current that is indicative of average inductor current. The processing may include using the sensed to current to generate a first charge voltage associated with minimum inductor current and a second charge voltage associated with maximum inductor current, and then averaging the first and second charge voltages to generate an output signal indicative of average inductor current.
    Type: Application
    Filed: December 1, 2015
    Publication date: May 25, 2017
    Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
    Inventors: Meng Wang, Xue Lian Zhou
  • Publication number: 20170146666
    Abstract: The receiver for a satellite positioning system includes at least one receive channel with an input stage configured to receive a satellite signals having different constellation frequencies belonging to one frequency band or to different frequency bands. The receive channel further includes a frequency transposition stage connected to the input stage (EE) and including a controllable local oscillator device configured to deliver different frequency transposition signals respectively adapted to the different constellation frequencies. A processing stage of the receive channel is connected to the frequency transposition stage and includes a control circuit configured to control the local oscillator device to sequentially and cyclically deliver the different frequency transposition signals.
    Type: Application
    Filed: April 22, 2016
    Publication date: May 25, 2017
    Applicant: STMicroelectronics (Grand Ouest) SAS
    Inventor: Stephane Dorbes
  • Publication number: 20170149328
    Abstract: A charge pump circuit is coupled between a positive supply node and a ground node. The charge pump circuit operates in response to clock signals output from a clock generator to produce a negative voltage at a negative voltage output node. A soft-start circuit for the charge pump circuit includes a comparison circuit configured to compare a varying intermediate voltage sensed between a rising supply voltage and the negative voltage to a ramp voltage during a start-up period of the charge pump circuit. The clock generator is selectively enabled to generate the clock signals in response to the comparison to provide for pulse-skipping.
    Type: Application
    Filed: December 1, 2015
    Publication date: May 25, 2017
    Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
    Inventors: Meng Wang, Xue Lian Zhou
  • Publication number: 20170147362
    Abstract: A microcontroller includes a core and a unit for managing the power supply of the core that includes an input for receiving an external signal indicating a leaving of a stand-by mode of operation. A signal intercepting unit intercepts the external signal and transmitting it with a delay to the unit for managing.
    Type: Application
    Filed: May 12, 2016
    Publication date: May 25, 2017
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Nicolas Froidevaux, Jean-Michel Gril-Maffre, Jean-Pierre Leca
  • Patent number: 9660015
    Abstract: A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: May 23, 2017
    Assignee: STMicroelectronics, Inc.
    Inventor: John H. Zhang
  • Patent number: 9659820
    Abstract: A method of forming a wavy line interconnect structure that accommodates small metal lines and enlarged diameter vias is disclosed. The enlarged diameter vias can be formed using a self-aligned dual damascene process without the need for a separate via lithography mask. The enlarged diameter vias make direct contact with at least three sides of the underlying metal lines, and can be aligned asymmetrically with respect to the metal line to increase the packing density of the metal pattern. The resulting vias have an aspect ratio that is relatively easy to fill, while the larger via footprint provides low via resistance. By allowing the via footprint to exceed the minimum size of the metal line width, a path is cleared for further process generations to continue shrinking metal lines to dimensions below 10 nm.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: May 23, 2017
    Assignees: International Business Machines Corporation, STMICROELECTRONICS, INC.
    Inventors: John H. Zhang, Lawrence A. Clevenger, Carl Radens, Yiheng Xu, Richard Stephen Wise, Akil K. Sutton, Terry Allen Spooner, Nicole A. Saulnier