Abstract: A PLL circuit includes a fractional-N divider generating a feedback signal, a first phase-frequency detector that compares the feedback signal to a reference signal to generate first up/down control signals that control a charge pump to generate a charge pump output current. A noise cancelation circuit includes a synchronization circuit that generates first and second synchronized feedback signals from the PLL circuit output and the feedback signal, where the first and second synchronized feedback signals are offset by an integer number of cycles of the PLL circuit output. A second phase-frequency detector circuit compares the first and second synchronized feedback clock signals to generate second up/down control signals whose pulse widths differ by the integer number of PLL cycles. A current digital to analog converter circuit is controlled in response to the second up/down control signals to apply noise canceling sourcing and sinking currents to the charge pump output current.

Abstract: A calibration scheme is used to control PLL bandwidth and contain its spread. In open loop, the VCO control voltage is swept over a range of values and VCO output frequency is measured at each control voltage level. The gain KVCO is determined for each measured output frequency and a corresponding current magnitude for the variable magnitude charge pump is calculated from a ratio of a constant to the gain KVCO and correlated in a look-up table to the measured output frequency. Once calibration is completed, the PLL loop is closed and a calculated current magnitude is fetched from the look-up table based on a desired output frequency for the PLL circuit. The variable magnitude charge pump circuit is then controlled to generate a charge pump current with a magnitude corresponding to the fetched charge pump current magnitude.

Abstract: A plastic material substrate has a die mounting location for a semiconductor die. Metallic traces are formed on selected areas of the plastic material substrate, wherein the metallic traces provide electrically-conductive paths for coupling to the semiconductor die. The semiconductor die is attached onto the die mounting location. The semiconductor die attached onto the die mounting location is electrically bonded to selected ones of the metallic traces formed on the plastic material substrate. A package material is molded onto the semiconductor die attached onto the die mounting location.

Abstract: An electronic device described herein includes a touch screen for a touch sensitive display carried by a portable housing. The electronic device is configured to operate in a high detection threshold mode to determine whether an object is in contact with the touch sensitive display, and operate in a low detection threshold mode to determine whether the object is adjacent to the touch sensitive display, based on lack of detection of the object being in contact with the touch sensitive display. The electronic device is further configured to determine whether the object is in contact with a peripheral edge of the portable housing by determining whether the object is adjacent opposite sides of the touch sensitive display, based on detection of the object being adjacent to the touch sensitive display.

Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

Abstract: Disclosed herein is a strain gauge including a substrate, with a first Wheatstone bridge arrangement of resistors disposed on a first surface of the substrate, and a second Wheatstone bridge arrangement of resistors disposed remotely from the first Wheatstone bridge arrangement of resistors. The resistors of the first Wheatstone bridge arrangement are equal in resistance to one another, while the resistors of the second Wheatstone bridge arrangement are unequal in resistance to one another and unequal to those of the first Wheatstone bridge arrangement. The first Wheatstone bridge arrangement of resistors are electrically connected in parallel with the second Wheatstone bridge arrangement of resistors such that each resistor of the first Wheatstone bridge arrangement is electrically connected in parallel with a different resistor of the second Wheatstone bridge arrangement.

Abstract: An integrated circuit includes a junction field-effect transistor formed in a semiconductor substrate. The junction field-effect transistor includes a drain region, a source region, a channel region, and a gate region. A first isolating region separates the drain region from both the gate region and the channel region. A first connection region connects the drain region to the channel region by passing underneath the first isolating region in the semiconductor substrate. A second isolating region separates the source region from both the gate region and the channel region. A second connection region connects the source region to the channel region by passing underneath the second isolating region in the semiconductor substrate.

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

Abstract: A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.

Abstract: The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.

Abstract: An optical device is mounted to an electronic circuit having a main face with at least one light source. The optical device is made from a block which includes, for each light source, a corresponding opening that passes through the block. The opening includes a cylindrical part with a threading on an inside surface.

Abstract: A first sampling circuit takes phase offset first samples of a received serial data stream in response to a first edge of a sampling clock and a first comparator circuit determines whether the plurality of phase offset first samples have a same logic state. A second sampling circuit takes phase offset second samples of the received serial data stream in response to a second edge of the sampling clock, opposite the first edge, and a second comparator circuit determines whether the phase offset second samples have a same logic state. One of the first samples or one of the second samples is then selected in response to the determinations made by the first and second comparator circuits. A serial to parallel converter circuit generates an output word including the selected one of the first and second samples.

Abstract: A receiver circuit includes a rectifier operable in full-, half-synchronous and asynchronous modes. A measurement circuit, with method, provides for real-time power measurement within the rectifier. The measurements are made based on the average output current from the rectifier delivered to the load and measurements sampled over time of the instantaneous voltage at each input/output node of the rectifier. Equivalent resistance in the rectifier is determined from the measurements and power dissipation calculated from the determined equivalent resistance and the average output current. The instantaneous voltages are synchronously captured through high-voltage AC coupling in order to detect the voltage drop across each element of the rectifier. The sensed voltages are amplified in the low voltage domain and converted by a high-speed analog-to-digital converter in order to produce data useful in computing equivalent resistance values.

Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

Abstract: An electronic device includes a first array of image pixels having inputs coupled to first selection tracks and outputs coupled to first output tracks, a second array of test pixels having inputs coupled to second selection tracks and outputs coupled to the first output tracks, and a third array of test pixels having inputs coupled to the first selection tracks and outputs coupled to second output tracks. A processor is coupled to receive output signals on the first and second output tracks. The output signals from the test pixels of the second and third arrays are fixed at one or the other of only two values in the absence of a defect. The output signals received by the processor over the first and second output tracks are processed to determine presence or absence of a defect.

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth , and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level.

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

Abstract: A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region.