Abstract: An electronic amplification-interface circuit includes a differential-current reading circuit having a first input terminal and a second input terminal. The differential-current reading circuit includes a continuous-time sigma-delta conversion circuit formed by an integrator-and-adder module generating an output signal that is coupled to an input of a multilevel-quantizer circuit configured to output a multilevel quantized signal. The integrator-and-adder module includes a differential current-integrator circuit configured to output a voltage proportional to an integral of a difference between currents received at the first and second input terminals. A digital-to-analog converter, driven by a respective reference current, receives and converts the multilevel quantized signal into a differential analog feedback signal. The integrator-and-adder module adds the differential analog feedback signal to the differential signal formed at the first and second input terminals.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A silicon-on-insulator semiconductor substrate supports rows extending in a direction. Each row includes complementary MOS transistors and associated contact regions allowing back gate of the complementary MOS transistors to be biased. All transistors and associated contact regions of a given row are mutually isolated by a first trench isolation. Each row is bordered on opposed edges extending parallel to said direction by corresponding second trench isolations that are shallower than the first trench isolation.

Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

Abstract: An integrated circuit includes a pulse width modulator. The pulse width modulator includes a multiplexer that receives a plurality of data delay signals. Each of the data delay signals is based on a data signal and a respective clock phase signal. The multiplexer includes a first multiplexer stage and a second multiplexer stage. The first multiplexer stage receives all of the data delay signals and has a relatively large delay. The second multiplexer stage receives to output signals from the first multiplexer stage and has a relatively small delay. The second multiplexer stage outputs a pulse width modulation signal that can have a pulse width corresponding to the offset between two adjacent clock phase signals.

Abstract: A micromechanical device includes a fixed structure, a mobile portion rotatable about a first rotation axis, and a first actuation structure arranged between the fixed structure and the mobile portion to enable rotation of the mobile portion about the first rotation axis. The mobile portion includes a supporting structure, a tiltable platform rotatable about a second rotation axis, transverse to the first rotation axis, and a second actuation structure coupled between the tiltable platform and the supporting structure. Stiffening elements are arranged between the supporting structure and the fixed structure. The micromechanical device may be used within a pico-projector.

Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.

Abstract: A quad signal generator circuit generates four 2N-1 bit control signals in response to a 2N-1 bit thermometer coded signal. A digital-to-analog converter (DAC) circuit has 2N-1 unit DAC elements, with each unit DAC element including four switching circuits controlled by corresponding bits of the four 2N-1 bit control signals. Outputs of the 2N-1 unit DAC elements are summed to generate an analog output signal. The quad signal generator circuit controls a time delay applied to clock signals relative to the 2N-1 bit thermometer coded signal and a time delay applied to the 2N-1 bit thermometer coded signal relative to the delayed clock signals in logically generating the four 2N-1 bit control signals. The analog output signal may be a feedback signal in a sigma-delta analog-to-digital converter (ADC) circuit that includes a multi-bit quantization circuit operating to quantize a filtered loop signal to generate the 2N-1 bit thermometer coded signal.

Abstract: A driver circuit includes an input node to receive an input signal for conversion at the output node of a converter, a driver node to provide to a switching power circuit stage in the converter a pulse-width modulated drive signal having an active time, first and second active time generation paths, and a selector circuit coupled to the first and second active time generation paths. The circuit is operable selectively in a first and a second operational mode wherein the driver node receives the pulse-width modulated drive signal having a first active time value generated in the first active time generation path, or a second active time value generated in the second active time generation path. The second active time generation path includes an active time generator network to provide a second active time value with the second active time value adaptively variable to match the first active time value.

Abstract: A control circuit includes: a flip-flop having an output configured to be coupled to a control terminal of a transistor and for producing a first signal; a comparator having an output coupled to an input of the flip-flop, and first and second inputs for receiving first and second voltages, respectively; a transconductance amplifier having an input for receiving a sense voltage indicative of a current flowing through the transistor, and an output coupled to the first input of the comparator; a zero crossing detection (ZCD) circuit having an input configured to be coupled to a first current path terminal of the transistor and to an inductor, where the ZCD circuit is configured to detect a demagnetization time of the inductor and produce a third signal based on the detected demagnetization time; and a reference generator configured to generate the second voltage based on the first and third signals.

Abstract: A semiconductor device, such as a Quad-Flat No-lead (QFN) package, includes a semiconductor chip arranged on a die pad of a leadframe. The leadframe has an array of electrically-conductive leads around the die pad. The leads in the array have distal ends facing away from the die pad as well as recessed portions at an upper surface of the leads. Resilient material, such as low elasticity modulus material, is present at the upper surface of the leads and filling the recessed portions. An insulating encapsulation is molded onto the semiconductor chip. The resilient material is sandwiched between the insulating encapsulation and the distal ends of the leads. This resilient material facilitates flexibility of the leads, making them suited for reliable soldering to an insulated metal substrate.

Abstract: A method of testing an integrated circuit die (IC) for cracks includes performing an assembly process on a wafer including multiple ICs including: lowering a tip of a first manipulator arm to contact and pick up a given IC, flipping the given IC such that a surface of the IC facing the wafer faces a different direction, and transferring the IC to a tip of a second manipulator arm, applying pressure from the second manipulator arm to the given IC such that pogo pins extending from the tip of the first manipulator arm make electrical contact with conductive areas of the IC for connection to a crack detector on the IC, and performing a conductivity test on the crack detector using the pogo pins. If the conductivity test indicates a lack of presence of a crack, then the second manipulator arm is used to continue processing of the given IC.

Abstract: A circuit includes: a first power domain including: an isolation cell, a first selection circuit having inputs for receiving a first functional signal and a first test signal and an output for controlling the isolation cell, and a second selection circuit having inputs for receiving a second functional signal and a second test signal and an output coupled to a signal input of the isolation cell; a second power domain including: a first circuit having an input coupled to a signal output of the isolation cell, a first observation element coupled to the signal output of the isolation cell, and a second observation element coupled to an output of the first circuit; where, when in test mode, the first selection circuit controls the isolation cell based on the first test signal, and the second selection circuit provides the second test signal to the signal input of the isolation cell.

Abstract: A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.

Abstract: An input receives a radio frequency (RF) signal having an interfering component superimposed thereon. The RF signal is mixed with a local oscillator (LO) signal and down-converted to an intermediate frequency (IF) to generate a mixed signal which includes a frequency down-converted interfering component. The mixed signal is amplified by an amplifier to generate an output signal. A feedback loop processes the output signal to generate a correction signal for cancelling the frequency down-converted interfering component at the input of the amplifier. The feedback loop includes a low-pass filter and a amplification circuit which outputs the correction signal.

Abstract: In an embodiment, an electronic circuit includes: a supply management circuit for receiving an input supply voltage and providing a first supply voltage; and a main circuit configured to: when the input supply voltage becomes higher than a first threshold, cause the electronic circuit to transition into an initialization state in which an oscillator is enabled and configuration data is copied from an NVM to configuration registers, and then to transition into a standby state in which the oscillator is disabled and content of the configuration registers is preserved by the first supply voltage, and, upon reception of a wakeup event, cause the configuration data from the configuration registers to be applied to the first circuit, and cause the electronic circuit to transition into an active state in which the first oscillator is enabled and the first circuit is configured to operate based on the configuration data.

Abstract: A system includes an addressable memory array, one or more processing cores, and an accelerator framework coupled to the addressable memory. The accelerator framework includes a Multiply ACcumulate (MAC) hardware accelerator cluster. The MAC hardware accelerator cluster has a binary-to-residual converter, which, in operation, converts binary inputs to a residual number system. Converting a binary input to the residual number system includes a reduction modulo 2m and a reduction modulo 2m?1, where m is a positive integer. A plurality of MAC hardware accelerators perform modulo 2m multiply-and-accumulate operations and modulo 2m?1 multiply-and-accumulate operations using the converted binary input. A residual-to-binary converter generates a binary output based on the output of the MAC hardware accelerators.

Abstract: An energy-harvesting generator provides energy for storage in a capacitor. A sensing circuit senses a voltage across the capacitor and generates an activation signal as a function of the sensed voltage. The activation signal switches from a first value to a second value when the sensed voltage reaches an upper threshold and switches from the second value to the first value when the sensed voltage reaches a lower threshold. A signal transmitter powered by stored energy in the capacitor responds to the activation signal being switched to the second value by activating and transmitting a transmission signal. The signal transmitter further responds to the activation signal being switched to the first value by discontinuing transmission of the transmission signal and deactivating. A duration of time elapsing between de-activation and activation of the transmitter is indicative of an amount of energy harvested by the energy-harvesting electric generator.

Abstract: A pixel includes a photoconversion zone, an insulated vertical electrode and at least one charge storage zone. The photoconversion zone belongs to a first part of a semiconductor substrate and each charge storage zone belongs to a second part of the substrate physically separated from the first part of the substrate by the insulated vertical electrode.

Abstract: A leadframe includes a die pad and a set of electrically conductive leads. A semiconductor die, having a front surface and a back surface opposed to the front surface, is arranged on the die pad with the front surface facing away from the die pad. The semiconductor die is electrically coupled to the electrically conductive leads. A package molding material is molded over the semiconductor die arranged on the die pad. A stress absorbing material contained within a cavity delimited by a peripheral wall on the front surface of the semiconductor die is positioned intermediate at least one selected portion of the front surface of the semiconductor die and the package molding material.