Abstract: Disclosed herein is a system for detecting rotational speed and early failures of an electronic device. The system includes a rotating disk affixed to a rotating shaft of the electronic device. The rotating disk has projections extending from its periphery. A time of flight ranging system determines distance to the projections extending from the rotating disk. Processing circuitry determines a rotational speed of the rotating shaft from the determined distances to the projections extending from the rotating disk, and detects whether the electronic device is undergoing an early failure from the determined distances to the projections extending from the rotating disk. Rotational speed is determined from the time between successive peaks in the determined distances, and early failures (for example, due to wobble of the shaft) are determined where the peaks vary unexpectedly in magnitude.

Abstract: A micro-electro-mechanical device is formed by a fixed structure having a cavity. A tiltable structure is elastically suspended over the cavity and has a main extension in a tiltable plane and is rotatable about a rotation axis parallel to the tiltable plane. A piezoelectric actuation structure includes first and second driving arms carrying respective piezoelectric material regions and extending on opposite sides of the rotation axis. The first and the second driving arms are rigidly coupled to the fixed structure and are elastically coupled to the tiltable structure. During operation, a stop structure limits movements of the tiltable structure with respect to the actuation structure along a planar direction perpendicular to the rotation axis. The stop structure has a first planar stop element formed between the first driving arm and the tiltable structure and a second planar stop element formed between the second driving arm and the tiltable structure.

Abstract: Disclosed herein is a method of performing a password challenge in an embedded system. The method includes receiving a password, scrambling the sub-words of the password pursuant to scramble control codes, retrieving a verification word, scrambling the sub-words of the verification word pursuant to the scramble control codes, and comparing the scrambled sub-words of the password to the scrambled sub-words of the verification word. Access to a secure resource is granted if the scrambled sub-words of the password match the scrambled sub-words of the verification word. The scramble control codes cause random reordering of the sub-words of the password and sub-words of the verification word in a same fashion, and insertion of random delays between the comparison of different sub-words of the password to corresponding sub-words of the verification word.

Abstract: An integrated device includes a deep plug. The deep plug is formed by a deep trench extending in a semiconductor body from a shallow surface of a shallow trench isolation. A trench contact makes contact with a conductive filler of the deep trench through the shallow trench at its shallow surface. A system includes at least one integrated device with the deep plug. Moreover, a corresponding process for manufacturing this integrated device includes steps for forming and filling the deep trench before forming the shallow trench isolation and trench window through which the trench contact extends to make contact with the conductive filler. The semiconductor body has a thickness, and the deep trench extends into the semiconductor body less than the thickness.

Abstract: A back side illuminated image sensor includes a pixel formed by three doped photosensitive regions that are superposed vertically in a semiconductor substrate. Each photosensitive region is laterally framed by a respective vertical annular gate. The vertical annular gates are biased by a control circuit during an integration phase so as to generate an electrostatic potential comprising potential wells in the central portion of the volume of each doped photosensitive region and a potential barrier at each interface between two neighboring doped photosensitive regions.

Abstract: A semiconductor substrate such as a semiconductor wafer includes a cutting line having a length. The semiconductor substrate is cut along the line by first selectively applying laser beam ablation energy to the semiconductor substrate a certain locations along the cutting line and then blade sawing along cutting line. The semiconductor substrate thus includes one or more ablated regions as well as one or more unablated regions at the cutting line.

Abstract: A system includes a random number generator generating a random number in response to an event. Control logic generates hierarchical part alignment selectors from the random number. For each secure data block to be stored in volatile storage, a physical address of a first logical address for that secure data block is set based upon the hierarchical part alignment selectors. For each data word within that secure data block, a physical address of a first logical address for that data word is set based upon the hierarchical part alignment selectors. For each data byte within that data word, a physical address of a first logical address for that data byte is set based upon the hierarchical part alignment selectors. A physical address of a logical address for a first data bit within that data byte is set based upon the hierarchical part alignment selectors.

Abstract: An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.

Abstract: A microelectromechanical mirror device has a fixed structure defining a cavity. A tiltable structure carrying a reflecting surface is elastically suspended above the cavity with a main extension in a horizontal plane. Elastic elements are coupled to the tiltable structure and at least one first pair of driving arms, which carry respective regions of piezoelectric material, are biasable to cause rotation of the tiltable structure about at least one first axis of rotation parallel to a first horizontal axis of the horizontal plane. The driving arms are elastically coupled to the tiltable structure on opposite sides of the first axis of rotation and are interposed between the tiltable structure and the fixed structure. The driving arms have a thickness, along an orthogonal axis transverse to the horizontal plane, smaller than a thickness of at least some of the elastic elements coupled to the tiltable structure.

Abstract: Disclosed herein is an ambient light sensor formed by a substrate, and an inner central area defined on the substrate, and a concentric polygonal shape defined on the substrate about the inner central area. The concentric polygonal shape is defined by concentric polygonal isolation regions and spoke shaped isolation regions extending through respective corners of the concentric polygonal isolation regions to the inner central area to thereby divide the concentric polygonal shape into a plurality of concentric polygonal regions, with each of the plurality of concentric polygonal regions divided into a plurality of trapezoidal sections. A plurality of photodiodes ae formed on the substrate such that each of the plurality of trapezoidal sections contains at least one photodiode. A color filter is applied to the plurality of trapezoidal sections and their respective photodiodes to thereby form a plurality of color channels.

Abstract: For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.

Abstract: A first dielectric layer made of a first dielectric material is deposited over a semiconductor substrate. A buffer layer is then deposited on an upper surface of the first dielectric layer. A trench is opened to extend through the buffer layer and the first dielectric layer. A second dielectric layer made of a second dielectric material is the deposited in a conformal manner on the buffer layer and filling the trench. Chemical mechanical polishing of the second dielectric layer is performed to remove overlying portions of the second dielectric layer with the buffer layer being used as a polish stop. After removing the buffer layer, the first dielectric layer and the second dielectric material filling the trench form a pre-metallization dielectric layer having a substantially planar upper surface.

Abstract: A method of managing the power supply of one or more first elements by a second element of a same first device, includes the steps of: sending, to a second device, a time extension request; evaluating during the time extension a power available from an electromagnetic field radiated by the second device; and adjusting the power supply of the second element and of the first element(s) according to the available power.

Abstract: A leadframe for semiconductor devices, the leadframe comprising a die pad portion having a first planar die-mounting surface and a second planar surface opposed the first surface, the first surface and the second surface having facing peripheral rims jointly defining a peripheral outline of the die pad wherein the die pad comprises at least one package molding compound receiving cavity opening at the periphery of said first planar surface.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

Abstract: A circuit includes a test data input (TDI) pin receiving a test data input signal, a test data out (TDO) pin outputting a test data output signal, and debugging test access port (TAP) having a test data input coupled to the TDI pin and a bypass register having an input coupled to the test data input of the debugging TAP. A multiplexer has inputs coupled to the TDI pin and the debugging TAP. A testing TAP has a test data input coupled to the output of the multiplexer, and a data register having an input coupled to the test data input of the testing TAP. The multiplexer switches so the test data input signal is selectively coupled to the input of the data register of the testing TAP so the output of the debugging TAP is selectively coupled to the input of the data register of the testing TAP.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: A sigma-delta modulator includes an N-bit quantization circuit that generates a stream of N-bit code words and a feedback signal path with an N-bit DAC circuit, having a non-ideal operation due to mismatch error, that converts the stream of N-bit code words to generate a feedback signal. A digital DAC copy circuit provides a digital replication of the N-bit DAC circuit. The digital replication accounts for the non-ideal operation of the N-bit DAC circuit 126 due to mismatch error, and converts the stream of N-bit code words to generate a stream of P-bit code words, where P>N, that are functionally equivalent to the feedback signal output from the N-bit DAC circuit.

Abstract: A ferroelectric field effect transistor includes a semiconductor substrate, with first and second source/drain regions being formed within the semiconductor substrate and being separated by a channel region. An interface layer is disposed on the channel region. A gate insulator layer is disposed on the interface layer. A ferroelectric layer is disposed on the gate insulator layer.

Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.