Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

Abstract: A carrier substrate is configured to carry at least one electronic chip and includes a mounting front face. An encapsulating cover is mounted on the front face of the carrier substrate through a mounting. This mounting includes at least one seating surface through which the cover and the carrier substrate make contact. At least one adhesive bead is located elsewhere than the seating surface in order to securely fasten the encapsulation cover and the carrier substrate.

Abstract: In an integrated circuit supporting complementary metal oxide semiconductor (CMOS) integrated circuits, latch-up immunity is supported by surrounding a hot n-well with an n-well strap spaced from the hot n-well by a specified distance in accordance with design rules. The n-well strap is positioned between the hot n-well and other n-well or n-type diffusion structures.

Abstract: A method for detecting the angular position of an electric motor includes: applying a first drive signal with a first polarity between first and second drive terminals that are coupled to respective stator windings of the electric motor; sensing at a third drive terminal a first signal resulting from the application of the first drive signal; applying a second drive signal with a second polarity between the first and second drive terminals, the second polarity being opposite the first polarity; sensing at the third drive terminal a second signal resulting from the application of the second drive signal; and producing a sum signal by summing the first and second signals, wherein the sum signal is indicative of an angular position of a rotor of the electric motor with respect to the stator windings.

Abstract: A circuit includes a current controlled oscillator (CCO), and a charge pump circuit boosting a supply voltage to produce a charge pump output voltage at a charge pump output node in response to output from the CCO. A current sensing circuit includes a first resistor coupled between the charge pump output node and an output node, a first transistor having a first conduction terminal coupled to the charge pump output node through a second resistor, and a second conduction terminal coupled to an input of the CCO. A second transistor has a first conduction terminal coupled to the output node, a second conduction terminal coupled to a reference current source, and a control terminal coupled to the control terminal of the first transistor and to the second conduction terminal of the second transistor.

Abstract: A control circuit is configured to control a power factor correction (PFC) pre-regulator including a power switch and being configured to operate in a transition mode of operation and a valley-skipping mode of operation. The control circuit generates a drive signal to control a switching of the power switch based on a current threshold. A current threshold generator in the control circuit is configured to modulate the current threshold as a function of a number of valleys skipped in the valley-skipping mode of operation.

Abstract: A touch screen controller (TSC) performs mutual capacitance sensing to acquire touch strength values from a touch matrix formed by capacitively intersecting drive and sense lines. For each sense line, the TSC sums the touch strength values associated therewith to form an emulated value for that sense line, and applies a weighting thereto, the weighting based upon a position of that sense line compared to a location on the touch matrix adjacent which a user's ear is expected to be placed. For each drive line, the TSC sums the touch strength values associated therewith to form an emulated value for that drive line, and applies a weighting thereto, the weighting based upon a position of that drive line compared to the location on the touch matrix adjacent which the user's ear is expected to be placed. The TSC determines presence of the user's based upon the emulated values.

Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.

Abstract: An electronic device includes a carrier substrate having a front face and an electronic chip mounted on the front face. An encapsulation cover is mounted above the front face and bounds a chamber in which the chip is situated. A front opening is provided in front of an optical component of the chip. An optical element, designed to allow light to pass, is mounted on the cover in a position which covers the front opening of the cover. The optical element includes a central region designed to deviate light and a positioning pattern that is visible through the front opening. An additional mask is mounted on the encapsulation cover in a position which extends in front of the optical element. A local opening of the additional mask is situated in front of the optical component.

Abstract: Individual bits of a K bit unary data word, wherein K is greater than one, are applied to K polyphase finite impulse response filter circuits. Each polyphase finite impulse response filter circuit receives a different bit and operates with a single bit precision to generate from each received bit a filtered output data word. A gain adjustment is applied by a gain stage circuit to each filtered output data word to generate a corresponding gain adjusted output data word. The gain adjusted output data words from the gain stage circuits are summed to generate an output data word. The unary data word may be output from a source such as a data encoder or a quantizer.

Abstract: An H-bridge circuit includes a supply voltage node, a first pair of transistors and a second pair of transistors. First transistors in each pair have the current paths therethrough included in current flow lines between the supply node and, respectively, a first output node and a second output node. Second transistors in each pair have the current paths therethrough coupled to a third output node and a fourth output node, respectively. The first and third output nodes are mutually isolated from each other and the second and fourth output nodes are mutually isolated from each other. The H-bridge circuit is operable in a selected one of a first, second and third mode.

Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.

Abstract: A delay chain circuit with series coupled delay elements receives a reference clock signal and outputs phase-shifted clock signals. A multiplexer circuit receives the phase-shifted clock signals and selects among the phase-shifted clock signals for output as in response to a selection signal. The selection signal is generated by a control circuit from a periodic signal having a triangular wave profile. A sigma-delta modulator converts the periodic signal to a digital signal, and an integrator circuit integrates the digital signal to output the selection signal. The selected phase-shifted clock signal is applied as the reference signal to a phase locked loop which generates a spread spectrum clock signal.

Abstract: An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated within a first encapsulation layer, and the receiver is encapsulated within a second encapsulation layer. An opaque layer covers the first encapsulation layer (encapsulating the receiver) and covers the second encapsulation layer (encapsulating the emitter). The first and second encapsulation layers are separated by a region of opaque material. This opaque material may be provided by the opaque layer or an opaque fill.

Abstract: An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to a top surface and a side surface of the transparent block. The receiver is mounted to the opaque conductive layer at the top surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.

Abstract: A system on chip includes an interconnect circuit including at least p input interfaces and at least k output interfaces, p source devices respectively coupled to the p input interfaces and k access ports respectively coupled to the k output interfaces and belonging to a target that includes one or more target devices. Each source device is configured to deliver transactions to the target via one of the access ports. An associated memory of each access port is configured to temporarily store the transactions received by the access port. The target is configured to deliver, for each access port, a fill signal representative of a current fill level of its associated memory. A control circuit is configured to receive the fill signals from the access ports and select the access ports eligible to receive a transaction depending on the current fill levels.

Abstract: A MOS transistor with two vertical gates is formed within a substrate zone of a semiconductor substrate doped with a first type of conductivity and separated from a remaining portion of the substrate by two first parallel trenches extending in a first direction. An isolated gate region rests on each flank of the substrate zone and on a portion of the bottom of the corresponding trench to form the two vertical gates. At least one gate connection region electrically connects the two vertical gates. A first buried region located under the substrate zone is doped with a second type of conductivity to form a first conduction electrode of the MOS transistor. A second region doped with the second type of conductivity is located at the surface of the substrate zone to form a second conduction electrode of the MOS transistor.

Abstract: A light sensor includes first and second neighboring photodiodes that are separated from each other by a space. A light-absorbing material is positioned at a location which is vertically above the space between the neighboring photodiodes. A first multilayer interference filter includes a central portion located vertically above the first photodiode and a peripheral portion that at least partly extends to rest on top of and in contact with the light-absorbing material.

Abstract: A carrier substrate includes a first network of electrical connections and recess. An electronic chip is mounted to the carrier substrate within the recess. The electronic chip includes an integrated guide of optical waves and a second network of electrical connections. A end section of an elongate optical cable is mounted on one side of the electronic chip with a longitudinal guide of optical waves optically coupled to the integrated guide of optical waves. Electrical connection elements are interposed between a face of the electronic chip and a bottom wall of the recess, such that first connect pads of the first electrical connection network are connected to second connect pads of the second electrical connection network through the electrical connection elements.